Novel approach to harmonic control for Class F power amplifier with high power added efficiency

This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl_(2)-only ACE and BCl^(3)/Cl_(2)ACE,respectively.The mixed radicals of BCl_(3)/Cl_(2)were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl_(3)/Cl_(2)ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.

High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission,and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated.Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance.The laser chips were p-side-down mounted on the AlN submount,and then tested at continuous wave(CW)operation with the heat-sink temperature setting to 25℃using a thermoelectric cooler(TEC).As high as 60.5%of the wall-plug efficiency(WPE)was achieved at the injection current of 11 A.The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12°C.Accelerated life-time test showed that the laser diodes had lifetimes of over 62111 h operating at rated power of 10 W.

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.

Role of PV-Powered Vehicles in Low-Carbon Society and Some Approaches of High-Efficiency Solar Cell Modules for Cars

Development of highly-efficient photovoltaic (PV) modules and expanding its application fields are significant for the further development of PV technologies and realization of innovative green energy infrastructure based on PV. Especially, development of solar-powered vehicles as a new application is highly desired and very important for this end. This paper presents the impact of PV cell/module conversion efficiency on reduction in CO2 emission and increase in driving range of the electric based vehicles. Our studies show that the utilization of a highly-efficient (higher than 30%) PV module enables the solar-powered vehicle to drive 30 km/day without charging in the case of light weight cars with electric mileage of 17 km/kWh under solar irradiation of 3.7 kWh/m2/day, which means that the majority of the family cars in Japan can run only by the sunlight without supplying fossil fuels. Thus, it is essential to develop high-efficiency as well as low-cost solar cells and modules for automotive applications. The analytical results developed by the authors for conversion efficiency potential of various solar cells for choosing candidates of the PV modules for automotive applications are shown. Then we overview the conversion efficiency potential and recent progress of various Si tandem solar cells, such as III-V/Si, II-VI/Si, chalcopyrite/Si, and perovskite/Si tandem solar cells. The III-V/Si tandem solar cells are expected to have a high potential for various applications because of its high conversion efficiency of larger than 36% for dual-junction and 42% for triple-junction solar cells under 1-sun AM1.5 G illumination, lightweight and low-cost potentials. The analysis shows that III-V based multi-junction and Si based tandem solar cells are considered to be promising candidates for the automotive application. Finally, we report recent results for our 28.2% efficiency and Sharp’s 33% mechanically stacked InGaP/GaAs/Si triple-junction solar cell. In addition, new approaches which are suitable for automotive applications by using III-V triple-junction, and static low concentrator PV modules are also presented.

Fully Integrated High-Voltage Generators with Optimized Power Efficiency

This paper describes how the power efficiency of fully integrated Dickson charge pumps in high- voltage IC technologies can be improved considerably by implementing charge recycling techniques, by replacing the normal PN junction diodes by pulse-driven active diodes, and by choosing an appropriate advanced smart power IC technology. A detailed analysis reveals that the combination of these 3 methods more than doubles the power efficiency compared to traditional Dickson charge pump designs.

High-efficiency S-band harmonic tuning GaN amplifier

In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.

Highly Efficient Power Conversion from Salinity Gradients with Ion-Selective Polymeric Nanopores

A polymeric nanopore membrane with selective ionic transport has been proposed as a potential device to convert the chemical potential energy in salinity gradients to electrical power. However, its energy conversion efficiency and power density are often limited due to the challenge in reliably controlling the size of the nanopores with the conventional chemical etching method. Here we report that without chemical etching, polyimide （PI） membranes irradiated with GeV heavy ions have negatively charged nanopores, showing nearly perfect selectivity for cations over anions, and they can generate electrical power from salinity gradients. We further demonstrate that the power generation efficiency of the PI membrane approaches the theoretical limit, and the maximum power density reaches 130m W/m2 with a modified etching method, outperforming the previous energy conversion device that was made of polymeric nanopore membranes.

Architecture of Intra Prediction for High Efficiency Video Coding

This paper explains intra prediction method for High Efficiency Video Coding(HEVC).Intra prediction removes correlation of adjacent samples in spatial domain.Intra predictor requires reference images which are stored in external memory.Memory access is required frequently in process of intra prediction.The proposed architecture can reduce external memory access by optimized internal buffer.

Improving thermal efficiency and stability of laser welding process for magnesium alloy by combining power modulation and subatmospheric pressure environment

The laser welding(LW)process of highly reflective materials presents low thermal efficiency and poor stability.To solve the problem,the effects of subatmospheric environment on LW process,technological parameters in subatmospheric environment on weld formation and welding with sinusoidal modulation of laser power on the stability of LW process in subatmospheric environment were explored.The AZ31magnesium(Mg)alloy was used as the test materials.The test result revealed that the weld penetration in subatmospheric environment can increase by more than ten times compared with that under normal pressure.After the keyhole depth greatly rises,significantly periodic local bulge is observed on the backwall surface of the keyhole and the position of the bulge shifts along the direction of the keyhole depth.Eventually,the hump-shaped surface morphology of the welded seam is formed;moreover,the weld width in local zones in the lower part of the welded seam remarkably grows.During LW in subatmospheric environment,the weld penetration can be further greatly increased through power modulation.Besides,power modulation can inhibit the occurrence of bulges in local zones on the backwall of the keyhole during LW in subatmospheric environment,thus further curbing the significant growth of the weld widths of hump-shaped welding beads and local zones in the lower part of welded seams.Finally,the mechanism of synchronously improving the thermal efficiency and stability of LW process of highly reflective materials through power modulation in subatmospheric environment was illustrated.This was conducted according to theoretical analysis of recoil pressure and observation results of dynamic behaviors of laser induced plasma clouds and keyholes in the molten pool through high speed photography.

High-efficiency tandem Ho:YAG single-crystal fiber laser delivering more than 100 W output power

We report on a high-efficiency,high-power tandem Ho:YAG single-crystal fiber(SCF)laser in-band pumped by a Tm-doped fiber laser at 1907 nm.In addition to the uniform heat distribution resulting from the large surface-to-volume ratio of this fiber-like thin-crystal rod,the long gain region provided by the tandem layout of two SCFs enables high lasing efficiency and power handling capability.More than 100 W output power is achieved at 2.1μm,corresponding to a slope efficiency of 70.5%and an optical-to-optical efficiency of 67.6%.To the best of our knowledge,this is the highest output power and efficiency ever reported from SCF lasers in the 2-μm spectral range.

基于PowerMILL的整体叶轮高效数控加工研究

整体叶轮广泛应用于航空航天、水利水电、汽车等行业的关键零部件中,它的加工质量和精度直接影响产品的性能和价格,所以对整体叶轮的加工制造研究意义重大。在基于Power EMILL软件的基础上,开发出某型号整体叶轮的高效精密制造技术,包括工艺工装、刀轨规划、操作方案等。采用的工装方案能有效避免干涉,使刀具有充足的加工空间;采用"五轴定位"模式加工流道,大大提高叶轮工件的开粗加工效率;使用"SWARF精加工"策略实现刀具的侧刃加工等,经验证采用该工艺工装及刀轨策略能有效提高叶轮的加工效率和精度。

High-repetition-rate and high-power efficient picosecond thin-disk regenerative amplifier

We present an effective approach to realize a highly efficient,high-power and chirped pulse amplification-free ultrafast ytterbium-doped yttrium aluminum garnet thin-disk regenerative amplifier pumped by a zero-phonon line 969 nm laser diode.The amplifier delivers an output power exceeding 154 W at a pulse repetition rate of 1 MHz with custom-designed 48 pump passes.The exceptional thermal management on the thin disk through high-quality bonding,efficient heat dissipation and a fully locked spectrum collectively contributes to achieving a remarkable optical-to-optical efficiency of 61%and a near-diffraction-limit beam quality with an M2 factor of 1.06.To the best of our knowledge,this represents the highest conversion efficiency reported in ultrafast thin-disk regenerative amplifiers.Furthermore,the amplifier operates at room temperature and exhibits exceptional stability,with root mean square stability of less than 0.33%.This study significantly represents advances in the field of laser amplification systems,particularly in terms of efficiency and average power.This advantageous combination of high efficiency and diffraction limitation positions the thin-disk regenerative amplifier as a promising solution for a wide range of scientific and industrial applications.

A high efficiency charge pump circuit for low power applications

A high efficiency charge pump circuit is designed and realized. The charge transfer switch is biased by the additional capacitor and transistor to eliminate the influence of the threshold voltage. Moreover, the bulk of the switch transistor is dynamically biased so that the threshold voltage gets lower when it is turned on during charge transfer and gets higher when it is turned off. As a result, the efficiency of the charge pump circuit can be improved. A test chip has been implemented in a 0.18μm 3.3 V standard CMOS process. The measured output voltage of the eight-pumpingstage charge pump is 9.8 V with each pumping capacitor of 0.5 pF at an output current of 0.18 μA, when the clock frequency is 780 kHz and the supply voltage is 2 V. The charge pump and the clock driver consume a total current of 2.9 μA from the power supply. This circuit is suitable for low power applications.

Constant envelope FrFT OFDM: spectral and energy efficiency analysis

Constant envelope with a fractional Fourier transformorthogonal frequency division multiplexing(CE-FrFT-OFDM)is a special case of a constant envelope OFDM(CE-OFDM),both being energy efficient wireless communication techniques with a 0 dB peak to average power ratio(PAPR).However,with the proper selection of fractional order,the first technique has a high bit error rate(BER)performance in the frequency-time selective channels.This paper performs further analysis of CE-FrFT-OFDM by examining its spectral efficiency(SE)and energy efficiency(EE)and compare to the famous OFDM and FrFT-OFDM techniques.Analytical and comprehensive simulations conducted show that,the CE-FrFT-OFDM has five times the EE of OFDM and FrFT-OFDM systems with a slightly less SE.Increasing CE-FrFT-OFDM’s transmission power by increasing its amplitude to 1.7 increases its SE to match that of the OFDM and FrFT-OFDM systems while slightly reducing its EE by 20%to be four times that of OFDM and FrFTOFDM systems.OFDM and FrFT-OFDM’s amplitude fluctuations cause rapid changing output back-off(OBO)power requirements and further reduce power amplifier(PA)efficiency while CE-FrFTOFDM stable operational linear range makes it a better candidate and outperforms the other techniques when their OBO exceeds 1.7.Higher EE and low BER in time-frequency selective channel are attracting features for CE-FrFT-OFDM deployment in mobile devices.

CO_(2) Reduction Request and Future High-Efficiency Zero-Emission Argon Power Cycle Engine

To meet the requirements of strict fuel consumption and emission limits,continuously increasing the thermal efficiency of an internal combustion engine and decreasing its exhaust emissions are the main challenges to its sustainable development within the automotive industry.Considering the competition with other zero-emission powertrain systems,such as vehicle batteries and fuel cells,the development of the internal combustion engine needs to focus on producing higher efficiency and zero emissions to meet the request of CO_(2) reduction.This paper introduces two novel concepts for an internal combustion engine featuring high efficiency and zero emissions.Referred to as the argon power cycle engine fueled with either hydrogen or natural gas within an oxygen–argon mixture,its fundamentals and characteristics are expounded.This includes a method necessary to absorb carbon dioxide when natural gas is used as fuel instead of hydrogen.

Alignment and efficiency-monitoring method of high-power fiber-to-fiber coupling

High-power fiber-to-fiber coupling is extensively used in fiber laser applications,and its performance is determined by coupling efficiency.We demonstrate a novel method for alignment and monitoring efficiency by detecting backscattering power at the fiber end cap.The relationship between alignment error and backscattering power is determined by simulations and experiments.Through this method,a state-of-the-art kW-level fiberto-fiber optic switch is developed(transmission efficiency>97%).It performs well for longer than 60 min.To the best of our knowledge,it is the first time to establish the mathematical model based on this method.Our results can provide guidance in high-power fiber-to-fiber coupling.

A high efficiency and power factor, segmented linear constant current LED driver

A high efficiency, high power factor, and linear constant current LED driver based on adaptive seg- mented linear architecture is presented. When the input voltage varied, the proposed LED driver automatically switched over LED strings according to the segmented LED voltage drop, which increased the LED lighting time. The efficiency and power factor are improved, while the system design is simplified by this control scheme. Without the usage of electrolytic capacitor and magnetic components, the proposed driver possesses advantages of smaller size, longer lifetime and lower cost over others. The proposed driver is implemented in 0.8 μm 5 V/40 V HVCMOS process, which occupies an active area of 820× 920μm2. The measured results show that the average value of the internal reference voltage is 500 4- 7 mV, with a standard deviation of only 4.629 mV, thus LED current can be set accurately. Under 220 V root mean square 50 Hz utility voltage and the number ratio of the three LED strings being 47 ： 17 ： 16, the system can realize a high power factor of 0.974 and power conversion efficiency of 93.4%.

A 1.8–3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 ： 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm^2.