In this paper,high-power LED with many integrated chips is used as thermal resistance analysis research object, and we do thermal resistance testing technology research on it. We put forward the thermocouple point con...In this paper,high-power LED with many integrated chips is used as thermal resistance analysis research object, and we do thermal resistance testing technology research on it. We put forward the thermocouple point contact test method. According to the principle that LED forward voltage changes with temperature,LED heat sink to surface temperature distribution is studied directly in the test,and then we analyze the thermal resistance of high-power LED with many integrated chips when its secondary packaging is introduced. This method makes the measurement of thermal resistance of LED more rapid and convenient. It provides an effective assessment method for the analysis of high power LED device design and engineering application.展开更多
40 years ago, there was a revolution in power converter efficiency, density, size and cost, with the introduction of silicon MOSFETs,PWM integrated circuits(ICs),new magnetic materials and new switch-mode power topolo...40 years ago, there was a revolution in power converter efficiency, density, size and cost, with the introduction of silicon MOSFETs,PWM integrated circuits(ICs),new magnetic materials and new switch-mode power topologies.Now,another revolution is enabled with wide band-gap gallium nitride(GaN) power ICs,new control ICs,new magnetics and the commercialization of high-frequency topologies.Monolithic integration combines GaN FET,GaN logic,GaN driver and now GaN level-shifters,to enable MHz+switching without parasitic concerns.This paper introduces the AllGaN^(TM) 650 V lateral GaN technology, essential GaN power ICs features and performance across a wide range of applications, at up to 1 MHz,from 25 W to 3.2 kW.展开更多
By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimi...By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.展开更多
基金Sponsored by the Heilongjiang Provincial Project(Grant No.12511121)the Harbin City Innovation Talent Project(Grant No.2011RFXXG019)the National Science and Technology Support Project(Grant No.2012BAH28F02)
文摘In this paper,high-power LED with many integrated chips is used as thermal resistance analysis research object, and we do thermal resistance testing technology research on it. We put forward the thermocouple point contact test method. According to the principle that LED forward voltage changes with temperature,LED heat sink to surface temperature distribution is studied directly in the test,and then we analyze the thermal resistance of high-power LED with many integrated chips when its secondary packaging is introduced. This method makes the measurement of thermal resistance of LED more rapid and convenient. It provides an effective assessment method for the analysis of high power LED device design and engineering application.
文摘40 years ago, there was a revolution in power converter efficiency, density, size and cost, with the introduction of silicon MOSFETs,PWM integrated circuits(ICs),new magnetic materials and new switch-mode power topologies.Now,another revolution is enabled with wide band-gap gallium nitride(GaN) power ICs,new control ICs,new magnetics and the commercialization of high-frequency topologies.Monolithic integration combines GaN FET,GaN logic,GaN driver and now GaN level-shifters,to enable MHz+switching without parasitic concerns.This paper introduces the AllGaN^(TM) 650 V lateral GaN technology, essential GaN power ICs features and performance across a wide range of applications, at up to 1 MHz,from 25 W to 3.2 kW.
基金supported by the Innovation Fund of State Key Lab of Millimeter Waves
文摘By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
