Short-pulse high-power microwave breakdown at high pressures

The fluid model is proposed to investigate the gas breakdown driven by a short-pulse（such as a Gaussian pulse） highpower microwave at high pressures.However,the fluid model requires specification of the electron energy distribution function（EEDF）;the common assumption of a Maxwellian EEDF can result in the inaccurate breakdown prediction when the electrons are not in equilibrium.We confirm that the influence of the incident pulse shape on the EEDF is tiny at high pressures by using the particle-in-cell Monte Carlo collision（PIC-MCC） model.As a result,the EEDF for a rectangular microwave pulse directly derived from the Boltzmann equation solver Bolsig＋ is introduced into the fluid model for predicting the breakdown threshold of the non-rectangular pulse over a wide range of pressures,and the obtained results are very well matched with those of the PIC-MCC simulations.The time evolution of a non-rectangular pulse breakdown in gas,obtained by the fluid model with the EEDF from Bolsig＋,is presented and analyzed at different pressures.In addition,the effect of the incident pulse shape on the gas breakdown is discussed.

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

The high power microwave （HPM） damage effect on the AIGaAs/InGaAs pseudomorphic high electron mobility transistor （pHEMT） is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy （SEM） illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device bum-out and the location beneath the gate near the source side is most susceptible to bum-out, which is in accordance with the simulated results.

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves （HPM） is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter

The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency（PRF） is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.

Review of high-power pulsed systems at the Institute of High Current Electronics

In this paper,we give a review of some most powerful pulsed systems developed at the Institute of High Current Electronics(HCEI),Siberian Branch,Russian Academy of Sciences,and describe latest achievements of the teams dealing with these installations.Besides the presented high-power systems,HCEI performs numerous investigations using much less powerful generators.For instance,last year much attention was paying to the research and development of the intense low-energy(<200 kV)high-current electron and ion beam and plasma sources,and their application in the technology[1-3].

集成电路HPM损伤机理分析

针对几种常用的数字和模拟集成电路,开展了高功率微波注入实验研究,获得了损伤阈值,分析了损伤阈值随高功率微波脉冲宽度的变化规律;通过失效分析,确定了高功率微波在集成电路微米量级的端间间隙处形成瞬态强电场,引起端间沿面击穿,并形成自持放电产生等离子区,使击穿电路端间大面积过流烧毁,导致集成电路功能失效;结合大气击穿机理及理论模型计算结果,认为高功率微波引起介质表面空气击穿是其损伤电子系统的重要机理。

耐HPM辐照宽频吸波超材料的设计与实现

针对高功率电磁脉冲对电子元器件、组件、系统等的强电磁干扰问题,借助超材料强谐振损耗特性和接地层反射特性,设计了一种耐高功率微波(HPM)辐照的宽频吸波超材料。该超材料在X波段反射率达到-12 dB,具有93%以上的吸收效率,并且在电场为20 kV/m、脉宽为1 000 ns、重复频率为10 Hz的强电磁环境条件下单次辐照50 s后,材料温度基本未上升,吸波性能保持不变,无损伤发生,说明宽频吸波超材料在HPM辐照下性能稳定。宽频吸波超材料可有效保护载体平台上的其他电子设备,解决在高功率电磁脉冲辐照下的强电磁干扰问题,提高电子系统的强电磁防护能力。

Effects of microwave pulse-width damage on a bipolar transistor

This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves（HPMs） through the injection approach.The dependences of the microwave damage power,P,and the absorbed energy,E,required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method.A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out.By means of a two-dimensional simulator,ISE-TCAD,the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively.The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different,while only one hot spot exists under the injection of dc pulses.The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy,respectively.The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.

Compact intense electron-beam accelerators based on high energy density liquid pulse forming lines

This paper provides a review of the compact intense electron-beam accelerators (IEBAs) based on liquid pulse forming lines (PFLs) that havebeen developed at the National University of Defense Technology (NUDT) in China. The history and roadmap of the compact IEBAs used todrive high-power microwave (HPM) devices at NUDT are reviewed. The properties of both de-ionized water and glycerin as energy storagemedia are presented. Research into the breakdown properties of liquid dielectrics and the desire to maximize energy storage have resulted in theinvention of several coaxial PFLs with different electromagnetic structures, which are detailed in this paper. These high energy density liquidPFLs have been used to increase the performance of IEBA subsystems, based on which the SPARK (Single Pulse Accelerator with spark gaps)and HEART (High Energy-density Accelerator with Repetitive Transformer) series of IEBAs were constructed. This paper also discusses howthese compact IEBAs have been used to drive typical HPM devices and concludes by summarizing the associated achievements and theconclusions that can be drawn from the results.

The pulsed microwave damage trend of a bipolar transistor as a function of pulse parameters

In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwaves（HPMs）,and investigate the thermal accumulation effect as a function of pulse repetition frequency（PRF） and duty cycle.A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density.The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz.The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time.Adopting the fitting method,the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained.Moreover,the accumulation temperature decreases with duty cycle increasing for a certain mean power.

高空电磁脉冲晚期成分作用下500 kV变压器无功损耗仿真研究

高空电磁脉冲晚期成分(HEMP E3)效应会在变压器中性点与大地构成的回路中产生地磁感应电流(GIC),严重时会使变压器铁心半波饱和,进而导致励磁电流严重畸变、无功损耗急剧增加、局部过热和振动加剧等后果。为准确地分析电力变压器在HEMPE3作用下的无功损耗特性,该文搭建了HEMP E3对500 kV电力变压器作用的电磁暂态仿真模型,基于IEC 61000-2-9给出的标准HEMP E3波形,定量分析了感应电场幅值、上升时间、下降时间以及变压器带负载情况等对电力变压器的影响规律。分析结果表明,HEMP E3作用下500 kV变压器无功损耗与GIC呈正相关性,且无功损耗波形滞后于感应电场的变化;HEMP E3感应电场的下降时间对500 kV变压器无功损耗的影响远超上升时间;负载阻抗的阻值相同时,容性负载下的励磁电流和无功损耗幅值最大,感性负载下幅值最小。研究结果可为进一步评估HEMPE3对电力系统稳定性的影响提供重要依据。

脉冲宽度对高功率微波阵列天线辐射特性的影响

为了研究馈入脉冲波形的脉冲宽度(脉冲半高宽)对高功率微波阵列天线辐射特性的影响,以L波段(1.575 GHz)高功率微波波导缝隙阵列天线为例,首先从理论分析、数值仿真方面研究不同馈入脉冲波形脉宽对阵列天线辐射增益和辐射脉冲脉宽的影响,然后根据仿真模型加工制作了一款由4根波导组成的宽边纵缝阵列天线,并将波导缝隙阵列天线结合功分网络与吉瓦级微波源(高功率微波磁控管)连试,开展了高功率微波辐射实验。数值仿真结果表明,当馈入的L波段微波脉冲脉宽约为10 ns时,阵列天线辐射增益比连续波馈入时的增益减小2.2 dB,脉宽展宽2.6 ns;当馈入脉冲波形脉宽约为15 ns时,阵列天线时域增益比连续波馈入时的时域增益减小1.5 dB,脉宽展宽1.9 ns。高功率微波实验结果表明,与辐射场脉宽为9.6 ns的高功率微波相比,辐射场脉冲脉宽为15.65 ns的高功率微波功率密度提升了3.1 dB。

定向能武器在电磁空间的运用

为探讨以激光武器和高功率微波武器为代表的定向能武器在电磁空间中的作战应用,采用演绎和类比的研究方法,从电磁频谱的物理原理和战争基本规律出发,论述电磁空间的基本性质、电磁火力的基本特点、电磁精确战的基本原理,以及定向能武器的基本定位、优势劣势、软硬杀伤。分析定向能武器在电磁空间的信息破坏力与信息创造力,梳理总结定向能武器的主要作战场景及运用方式,最后就加快定向能武器走向实战提出建议。

高功率微波作用下三维结构中多物理场耦合过程仿真方法研究综述

电子系统暴露在高功率微波中,产生的多物理耦合效应会引发其性能降低甚至损毁。为指导其电磁防护设计,需要研究大规模电(磁)-热-应力耦合并行仿真方法。通过集成高性能并行计算框架和区域分解方法(domain decomposition method,DDM),可以实现超大规模复杂结构的高效数值模拟。在无源结构的电-热-应力耦合数值模拟中,每个时间步都需要反复求解电流连续性方程、热传导方程和热应力方程,场间通过焦耳热和温变材料参数实现耦合,当达到稳态后,进入下一个时间步;在射频无源结构的电磁-热-应力耦合过程数值模拟中,每个时间步内分别求解电磁场和热场,并通过耗散功率和温变材料参数实现场间耦合,当达到稳态后,根据温升计算热应力,然后进入下一个时间步。本文回顾了电(磁)-热-应力大规模并行仿真的实现方法,并列举了国内外科研团队在键合线阵列、系统级封装、微波滤波器等多种复杂结构的多物理场模拟方面的标志性成果。

HPM对大鼠大脑结构及其神经递质的影响

目的探讨S波段高功率微波(HPM)辐射对大鼠皮层形态结构及其氨基酸类神经递质的影响。方法采用2～90mW/cm2S波段高功率微波辐照Wistar大鼠,通过苏素素—伊红染色(HE)、甲苯胺蓝染色和电镜观察大脑皮层的形态结构改变;采用高效液相色谱仪检测10和50mW/cm2照后6h和1d大脑皮层中4种氨基酸(谷氨酸、天门冬氨酸、γ氨基丁酸和甘氨酸)含量的变化。结果平均功率密度10,50和90mW/cm2S波段高功率微波可引起大脑皮层神经元固缩、深染,尼氏体减少;突触结构模糊,囊泡堆积;髓鞘融合、解离等。10和50mW/cm2组照后6h大脑皮层上述4种氨基酸含量均显著增高(P<0.01);而照后1d仅见γ氨基丁酸和甘氨酸含量仍较高(P<0.01)。结论S波段高功率微波辐射可引起大鼠大脑皮层神经元尼氏体、突触结构和髓鞘等损伤及氨基酸类神经递质代谢紊乱。

HPM武器电子毁伤效能评估方法

为综合考虑高功率微波(high-power microwave,HPM)电子毁伤过程中涉及的各要素并给出特定概率下的毁伤程度分级,提出HPM武器电子毁伤效能的灰色-贝叶斯网络评估方法。通过分析HPM武器的电子毁伤过程,构建了毁伤的评估指标体系,并采用层次分析法和熵权法确定了指标权重;根据各指标的取值定义了基于隶属度的均匀评分规则,并以此为输入,借助灰色和贝叶斯网络理论,构建了HPM武器电子毁伤等级和毁伤概率评估模型,明确了干扰、削弱、损伤及破坏4种毁伤等级对应的评估值区间,计算了相应毁伤等级下的毁伤概率。最后通过算例进行了验证,效果良好。该评估方法对定量研究HPM武器的电子毁伤具有一定的参考价值。

高功率腔体滤波器的电磁-热-力多物理场智能代理模型及快速预测

电磁多物理场计算在模拟高功率微波器件方面至关重要。为了快速且精确地获取高功率腔体滤波器中由电磁引发的多物理场响应,本文构建了一种基于数据驱动的电磁多物理场代理模型。首先利用有限元方法建立腔体滤波器的多物理场响应数据库,随后基于该数据库构建数据驱动的人工神经网络代理模型。结果对比表明:该代理模型能够精确且快速地预测高功率腔体滤波器在不同输入功率下的S参数曲线,预测精度超过98%,预测时间少于0.2 s;相较于传统的电磁多物理场数值计算方法,计算速度提升了3个数量级以上。因此,本文代理模型的快速精确预测能力对新型高功率微波器件的稳定性分析、可靠性评估和优化设计具有重要的理论指导意义和实际工程应用价值。

一种小型化脉冲行波管高压电源设计与实现

为满足雷达整机对发射机小型化的需求,针对8~18 GHz宽带脉冲行波管设计了一种小型化高压电源。采用脉冲峰值功率设计方法,结合高压电容储能,实现了行波管在脉冲工作期间高压稳定输出。同时主功率逆变电路采用了移相全桥拓扑结构,高压整流电路采用了碳化硅二极管,这可减轻电源的散热压力,提高高压电源的功率密度。研制的小型化脉冲高压电源,阴极电压-6.5 kV,最大工作脉宽2 ms,峰值功率最大1600 W。与某型号脉冲行波管联调,在脉冲工作期间行波管输出射频信号功率稳定,测试结果验证了该设计方法的可行性。

HPM效应研究中的FDTD-PSPICE混合仿真方法

用FDTD-PSPICE混合仿真方法研究了高功率微波(HPM)对印制电路板(PCB)上电路信号的作用机理,通过开发FDTD-PSPICE仿真程序完成电磁波和电路信号的混合计算,以实现电磁波对电路作用的分析。在FDTD与SPICE之间的快速混合仿真中,文章采用进程间通信的方法使程序运行效率有很大的提高。进一步分析了HPM对一个简单放大器电路的影响。

基于新型高功率微波的雷达探测技术研究

本文研究提出一种新型高功率微波窄脉冲,能够具备雷达探测能力,适用于解决单脉冲探测雷达功率不足的问题。新型高功率微窄脉冲为ns级脉冲信号,具备中心载频信息并且具有超高重频、超高功率、超高带宽的特性。根据该脉冲特性,本文深入探索提出一种基于新型高功率微波的雷达探测方法,该方法采用基于脉冲路径编码压缩的物理脉冲压缩方式获得一种新型高功率微波窄脉冲,通过单脉冲探测的方式实现对目标探测侦察。经数值仿真模拟与实际测量对比分析表明,对于探测雷达系统而言,基于脉冲路径编码压缩方法能够在现有功率源基础上提高20 dB以上的信号增益。通过多目标探测实验验证,新型高功率微波雷达系统能够有效探测目标,其系统距离测量精度误差小于5‰。实验证明:新型高功率微波窄脉冲具有雷达探测能力,能有效提高系统探测功率,提升系统探测距离。