975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calcu-lated using the 2D finite difference time domain(FDTD)algorithm and the scattering matrix method(SMM).The periods and etch depth of the grating parameters have been optimized.A board area laser diode(BA-LD)with high-order diffraction grat-ings has been designed and fabricated.At output powers up to 10.5 W,the measured spectral width of full width at half maxi-mum(FWHM)is less than 0.5 nm.The results demonstrate that the designed high-order surface gratings can effectively nar-row the spectral width of multimode semiconductor lasers at high output power.

A new method for measuring the pulse-front distortion of arbitrary shapes in high-power ultrashort laser systems

We present a new method that can be used to calculate pulse-front distortion by measuring the spectral interference of two point-diffraction fields in their overlapped district. We demonstrate, for the first time, the measurement of the pulse-front distortion of the pulse from a complex multi-pass amplification system, which exists in almost all high-power laser systems, and obtain the irregular pulse-front distribution. The method presented does not need any reference light or assumption about the pulse-front distribution, and has an accuracy of several femtoseconds.

High power semiconductor laser array with single-mode emission

The semiconductor laser array with single-mode emission is presented in this paper.The 6-μm-wide ridge waveguides(RWGs)are fabricated to select the lateral mode.Thus the fundamental mode of laser array can be obtained by the RWGs.And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A,after that,a kink will appear.The slow axis(SA)far-field divergence angle of the unit is 13.65.The beam quality factor M;of the units determined by the second-order moment(SOM)method,is 1.2.This single-mode emission laser array can be used for laser processing.

Trends in ultrashort and ultrahigh power laser pulses based on optical parametric chirped pulse amplification

Since the proof-of-principle demonstration of optical parametric amplification to efficiently amplify chirped laser pulses in 1992, optical parametric chirped pulse amplification（OPCPA） became the most promising method for the amplification of broadband optical pulses. In the meantime, we are witnessing an exciting progress in the development of powerful and ultrashort pulse laser systems that employ chirped pulse parametric amplifiers. The output power and pulse duration of these systems have ranged from a few gigawatts to hundreds of terawatts with a potential of tens of petawatts power level. Meanwhile, the output pulse duration based on optical parametric amplification has entered the range of fewoptical-cycle field. In this paper, we overview the basic principles, trends in development, and current state of the ultrashort and laser systems based on OPCPA, respectively.

High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission,and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated.Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance.The laser chips were p-side-down mounted on the AlN submount,and then tested at continuous wave(CW)operation with the heat-sink temperature setting to 25℃using a thermoelectric cooler(TEC).As high as 60.5%of the wall-plug efficiency(WPE)was achieved at the injection current of 11 A.The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12°C.Accelerated life-time test showed that the laser diodes had lifetimes of over 62111 h operating at rated power of 10 W.

Review of high-power pulsed systems at the Institute of High Current Electronics

In this paper,we give a review of some most powerful pulsed systems developed at the Institute of High Current Electronics(HCEI),Siberian Branch,Russian Academy of Sciences,and describe latest achievements of the teams dealing with these installations.Besides the presented high-power systems,HCEI performs numerous investigations using much less powerful generators.For instance,last year much attention was paying to the research and development of the intense low-energy(<200 kV)high-current electron and ion beam and plasma sources,and their application in the technology[1-3].

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si-Si_(3)N_(4) dielectric layer

The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.

High current pulse forming network switched by static induction thyristor

A high-current pulse forming network (PFN) has been developed for applications to artificial solar-wind generation. It is switched by staticinduction thyristor (SIThy) and is capable of generating pulsed current of ~9.7 kA for a time duration of ~1 ms. The SIThy switch module ismade that it can be controlled by an optical signal and it can be operated at elevated electrical potential. The experiments reported in this paperused two switch modules connected in series for maximum operating voltage of 3.5 kV. The experimental results have demonstrated a pulsedhigh-current generator switched by semiconductor devices, as well as the control and operation of SIThy for pulsed power application.

Correlation of Electrical Noise with Non-radiative Current for High Power QWLs

The characteristics of low frequency electrical noise, voltage current ( V I ) and electrical derivation for 980 nm InGaAsP/InGaAs/GaAs high power double quantum well lasers(DQWLs) are measured under different conditions. The correlation of the low frequency electrical noise with surface non radiative current of devices is discussed. The results indicate the low frequency electrical noise of 980 nm DQWLs with high power is mainly 1/ f noise and has good relation with the device surface current at low injection.

High-energy and high-peak-power GHz burst-mode all-fiber laser with a uniform envelope and tunable intra-burst pulses

We report a Yb-doped all-fiber laser system generating burst-mode pulses with high energy and high peak power at a GHz intra-burst repetition rate.To acquire the uniform burst envelope,a double-pre-compensation structure with an arbitrary waveform laser diode driver and an acoustic optical modulator is utilized for the first time.The synchronous pumping is utilized for the system to reduce the burst repetition rate to 100 Hz and suppress the amplified spontaneous emission effect.By adjusting the gain of every stage,uniform envelopes with different output energies can be easily obtained.The intra-burst repetition rate can be tuned from 0.5 to 10 GHz actively modulated by an electro-optic modulator.Optimized by timing control of eight channels of analog signal and amplified by seven stages of Yb-doped fiber amplifier,the pulse energy achieves 13.3 mJ at 0.5 ns intra-burst pulse duration,and the maximum peak power reaches approximately3.6 MW at 48 ps intra-burst pulse duration.To the best of our knowledge,for reported burst-mode all-fiber lasers,this is a record for output energy and peak power with nanosecond-level burst duration,and the widest tuning range of the intra-burst repetition rate.In particular,this flexibly tunable burst-mode laser system can be directly applied to generate high-power frequency-tunable microwaves.

一种纳秒级半导体激光器集成微模块

为提升半导体激光器在高重频下工作的稳定性,并满足模块高集成度的需求,研制了一款纳秒级半导体激光器集成微模块。该微模块包括半导体激光器芯片、装载激光器芯片的基板以及驱动电路。在基板侧面设计金属化过孔,将半导体激光器芯片的电极从基板侧面引出,实现了激光的垂直发射;采用球栅阵列(BGA)封装GaN HEMT和GaN驱动器,优化电路布局和半导体激光器的回流路径,减小寄生电感,实现了1 ns的发光脉冲宽度,工作重频达到了1 MHz;同时,发光脉冲信号的前沿抖动度小于60 ps,脉冲宽度抖动度小于200 ps,表明其具有较高的稳定性。最后,采用高透明、耐高温的灌封胶对该微模块实现集成化封装,整体尺寸仅为6mm×5mm×2.6mm。

可调谐DFB激光器泵浦的PPLN绿色倍频光源

为研制脉冲宽度、重复频率以及输出功率可调谐至单光子级别的可见光波段高重频纳秒级窄脉冲光源,提出了一种基于增益调制型DFB激光器和PPLN晶体的绿色倍频光源设计方案。通过自制的纳秒级高速驱动电路以脉冲方式驱动DFB激光器产生固定波长的泵浦源;利用光纤半导体衰减器调节衰减量,调制泵浦光强度;采用PPLN晶体作为非线性晶体材料,通过其可调谐特性得到准相位匹配的绿色倍频激光输出。实验结果表明,DFB激光器输出的泵浦光功率和中心波长稳定,脉冲宽度1.02 ns~10.25 ns、工作频率1 Hz~10 MHz连续独立可调,泵浦光功率衰减至-44.61 dB时工作于532.96 nm波段的绿色倍频光输出脉冲平均光子数约为384 N,倍频光-光转换效率9.3%。

大功率高能脉冲激光电源设计

根据YAG激光器对大功率高能量脉冲电源的应用需求,设计了一种大功率脉冲激光电源,可实现高脉冲能量重复频率输出及充电电压灵活调控。前级充电网络采用串联LC谐振变换器,后级脉冲形成网络选择晶闸管触发LC放电电路。最终,研制了1台7 kW实验样机,最大重复频率10 Hz,最高充电电压2.2 kV,可实现单脉冲最高700 J电能输出,满足大功率高能脉冲输出的应用需求,实验测试结果验证了设计的可行性。

量子通信中高速窄脉冲激光源校准技术的研究

为了应对目前量子通信领域中所有用到的高速窄脉冲激光源在没有相关技术规范的情况下计量校准难的问题,从而解决高速窄脉冲激光源量值溯源问题,确保工业研究及应用中的量值的准确可靠,对量子通信中高速窄脉冲激光源校准技术进行了研究。首先,介绍了高速窄脉冲激光源的组成及工作原理;其次,通过分析高速窄脉冲激光源的功能及应用影响参数,确定了高速窄脉冲激光源校准的7个校准项目;然后,提出了每个项目的校准方法并搭建了各个项目校准所需设备系统;最后,依据校准所得波形验证了校准方法的有效性。

1 MHz,273 W掺镱棒状光纤啁啾脉冲放大系统

掺镱超快光纤激光器因光束质量好、输出功率高而被广泛应用于科学研究、工业加工、医疗诊断等领域.大模场面积的棒状光纤可以提供平均功率在百瓦量级的高能量飞秒脉冲输出,本文基于掺镱棒状光纤搭建了啁啾脉冲放大系统,详细研究脉冲输入功率对脉冲放大及压缩的影响.实验结果表明,在低放大功率下(<160 W)增大输入功率可提升放大效率且脉冲压缩质量基本不受影响;当放大功率进一步增大时,需选择合适的输入功率避免积累过量非线性相位.该啁啾脉冲放大系统可将20 W圆偏光输入放大至305 W,压缩后产生平均功率为273 W、能量为273μJ的264 fs脉冲,脉冲平均功率和峰值功率比Pedersen课题组(Pedersen M E,Johansen M M,Olesen A S,Michieletto M,Gaponenko M,Maack M D 2022 Opt.Lett,475172)结果约提升了一倍.

高平均功率高次谐波光源的研究进展(特邀)

阿秒激光脉冲(10-18 s)具有超高的时间分辨率,可以用于实现原子分子内的电子动力学的探测,这使阿秒科学成为超快光学领域里最受关注的研究前沿。传统的钛宝石飞秒激光驱动的高次谐波阿秒脉冲平均功率较低。最近,高平均功率的掺镱激光发展迅速,为产生高功率高次谐波阿秒脉冲提供了良好的驱动源。本文回顾了近二十年高重频的高次谐波光源的平均功率和最高光子能量逐步提高的研究进展,并介绍了高重频高次谐波阿秒脉冲在泵浦探测实验和相干成像等方面的应用和前景。

高重频窄脉宽多波长激光器可靠性分析

本文对高重频窄脉宽多波长激光器的可靠性进行了分析及验证,建立了高重频窄脉宽多波长激光器的框图法模型。在初始设计阶段开展激光器的可靠性分析,定量计算了激光器各单元的可靠性结果,包括失效率λ和平均无故障工作时间(Mean Time Between Failure,MTBF),预计激光器整机的无故障工作时间为1798.8 h。为满足激光器的设计指标要求,通过选用高品质晶体、半导体激光器的Ⅰ级降额设计和电源控制的冗余设计,实现激光器的可靠性优化。经优化设计后,激光器整机的无故障工作时间达2260.9 h。搭建激光器整机对可靠性优化设计结果进行验证,验证结果表明:激光器无故障工作时间可达2400 h。

开关型脉冲激光电源系统的设计与实现

本文探究了开关型脉冲激光电源系统的设计方案,并通过MTALAB仿真验证其功能的实现情况。根据脉冲氙灯的特性以及脉冲激光电源的工作原理,设计了基于串联谐振型半桥变换器的电能变换主电路,保证电源电压噪声小、稳定性好;同时,使用高频高压变压器降低电磁干扰、提高转换效率。在完成系统设计后,使用MATLAB仿真软件构建系统模型并验证其功能。结果表明,该系统的软启动功能、自保护功能以及缓上电功能可以正常实现,符合设计预期。

Photoconductive semiconductor switch-based triggering with 1 ns jitter for trigatron

Synchronization for multiple-pulse at nanosecond range shows a great value on the power multiplication and synchronous electric fieldsapplications. Nanosecond or sub-ns jitter synchronization is essential for the improved working efficiency of the large amounts of pulse modulesand accurate requirements for the power coherent combining applications. This paper presents a trigger generator based on a laser diodetriggered GaAs photoconductive semiconductor switch (PCSS) with low jitter and compact size characteristics. It avoids the high currentsthat are harmful to high-gain mode PCSSs. In the trigger circuit, a 200 pF capacitor is charged by a microsecond-scale 18 kV pulse and thendischarged via the high-gain mode GaAs PCSS to trigger the high-power trigatron switch. When triggered by the ~10 ns pulse generated by thePCSS, the DC-charged trigatron can operate in the 20e35 kV range with 10 ns rise time and 1 ns delay-time jitter.

Pulsed LD side-pumped MgO：LN electro-optic cavity-dumped 1123 nm Nd： YAG laser with short pulse width and high peak power

We report a cavity-dumped 1123 nm laser with narrow pulse width and high peak power by an Mg O: LN crystal electrooptic(EO) modulator. Based on the structural optimization design of a folded biconcave cavity using the 808 nm pulsed laser diode(LD) side-pumped ceramic Nd: YAG rod, output pulses with maximum pulse energy and peak power up to39.6 m J and 9.73 MW were obtained, corresponding to 100 Hz repetition rate and 4.07 ns pulse width. The instabilities of pulse width and pulse energy were ±1.55% and ±2.06%, respectively. At the highest repetition rate of 1 kHz, the pulse energy, pulse width, and peak power were 11.3 mJ, 5.05 ns, and 2.24 MW, respectively. The instabilities of pulse width and pulse energy were ±2.65% and ±3.47%, respectively.