The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under...The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.展开更多
A non-sputtering discharge is utilized to verify the effect of replacement of gas ions by metallic ions and consequent decrease in the secondary electron emission coefficient in the discharge current curves in high-po...A non-sputtering discharge is utilized to verify the effect of replacement of gas ions by metallic ions and consequent decrease in the secondary electron emission coefficient in the discharge current curves in high-power impulse magnetron sputtering （HiPIMS）. In the non-sputtering discharge involving hydrogen, replacement of ions is avoided while the rarefaction still contributes. The initial peak and ensuing decay disappear and all the discharge current curves show a similar feature as the HiPIMS discharge of materials with low sputtering yields such as carbon. The results demonstrate the key effect of ion replacement during sputtering.展开更多
The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of th...The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of the Si target.By virtue of electron-probe microanalysis, X-ray diffraction analysis and scanning electron microscopy, the influence of the Si content on the coating composition, phase constituents, deposition rate, surface morphology and microstructure was investigated systematically. In addition, the change rules of micro-hardness, internal stress, adhesion, friction coefficient and wear rate with increasing Si content were also obtained. In this work, the precipitation of silicon in the coating was found.With increasing Si content, the coating microstructure gradually evolved from continuous columnar to discontinuous columnar and quasi-equiaxed crystals; accordingly, the coating inner stress first declined sharply and then kept almost constant. Both the coating hardness and the friction coefficient have the same change tendency with the increase of the Si content, namely increasing at first and then decreasing. The Cr–Si–N coating presented the highest hardness and average friction coefficient for an Si content of about 9.7 at.%, but the wear resistance decreased slightly due to the high brittleness.The above phenomenon was attributed to a microstructural evolution of the Cr–Si–N coatings induced by the silicon addition.展开更多
The pulse energy in the ultrafast soliton fiber laser oscillators is usually limited by the well-known wave-breaking phenomenon owing to the absence era desirable real saturable absorber （SA） with high power toleran...The pulse energy in the ultrafast soliton fiber laser oscillators is usually limited by the well-known wave-breaking phenomenon owing to the absence era desirable real saturable absorber （SA） with high power tolerance and large modulation depth. Here, we report a type of microfiber-based MoTe2 SA fabricated by the magnetron-sputtering deposition （MSD） method. High-energy wave-breaking free soliton pulses were generated with pulse duration/pulse energy/average output power of 229 fs/2.14 nJ/57 mW in the 1.5 μm regime and 1.3 ps/13.8 nJ/ 212 mW in the 2 μm regime, respectively. To our knowledge, the generated soliton pulses at 1.5μm had the shortest pulse duration and the highest output power among the reported erbium-doped fiber lasers mode locked by transition metal dichalcogenides. Moreover, this was the first demonstration of a MoTe2-based SA in fiber lasers in the 2 ltm regime, and the pulse energy/output power are the highest in the reported thulium-doped fiber lasers mode locked by two-dlmensional materials. Our results suggest that a microfiber-based MoTe2 SA could be used as an excellent photonic device for ultrafast pulse generation, and the MSD technique opens a promising route to produce a high-performance SA with high power tolerance and large modulation depth, which are beneficial for high-energy wave-breaking free pulse generation.展开更多
Ti-Cu films with different Cu concentrations were fabricated by high-power pulsed magnetron sputtering（HPPMS） to release copper ions and catalyze NO to improve the blood compatibility. The Cu concentrations of films...Ti-Cu films with different Cu concentrations were fabricated by high-power pulsed magnetron sputtering（HPPMS） to release copper ions and catalyze NO to improve the blood compatibility. The Cu concentrations of films were 25.7 at% and 68.8 at%. Pure Ti films were also fabricated. Copper release, catalytic release of nitric oxide（NO）, and blood platelet adhesion of Ti-Cu films were studied. Ti-Cu films released copper ions in PBS solution and more Cu ions were released from films with 68.8 at% Cu. Ti-Cu films had excellent ability of catalytical decomposition of exogenous donor S-nitroso-N-acetyl-DL-penicillamine（SNAP） and as a result, nitric oxide（NO） was generated. The NO generation catalyzed by Ti-Cu films was significantly higher than that by pure Ti films. This was more eminent in the Ti-Cu films with 68.8 at% Cu. The platelet adhesion and activation of Ti-Cu films were significantly inhibited compared to that of pure Ti films in the presence of SNAP. The Ti-Cu film fabricated by HPPMS showed the ability of releasing Cu ions to catalyze SNAP to generate NO to inhibit platelet adhesion and activation.展开更多
目的采用高功率脉冲磁控溅射(HIPIMS)制备力学性能优良的氮化铬薄膜。方法采用HIPIMS技术,利用铬靶及氩气、氮气,在不同峰值功率(52.44,91.52,138 k W)下沉积了氮化铬薄膜。采用X射线衍射技术(XRD)、扫描电子显微镜(SEM)、纳米硬度计、...目的采用高功率脉冲磁控溅射(HIPIMS)制备力学性能优良的氮化铬薄膜。方法采用HIPIMS技术,利用铬靶及氩气、氮气,在不同峰值功率(52.44,91.52,138 k W)下沉积了氮化铬薄膜。采用X射线衍射技术(XRD)、扫描电子显微镜(SEM)、纳米硬度计、摩擦磨损试验机、划痕仪等评价方法,研究了峰值功率对薄膜组织结构和力学性能的影响。结果当峰值功率为52 k W时,靶材原子与离子的比值仅为5.4%,所生成氮化铬薄膜的晶粒尺寸较小,薄膜出现剥落的临界载荷为42 N,薄膜的磨损深度达到349 nm;当峰值功率提高到138 k W时,靶材原子与离子的比值为12.5%,在最大载荷100 N时,薄膜也未出现剥落,同时磨损深度仅为146 nm。结论高的峰值功率能够提高靶材原子离化率和离子对基片的轰击效应,使氮化铬薄膜晶粒重结晶而长大,消除部分应力,使薄膜表现出优良的耐磨性和韧性,因此提高靶材峰值功率可以提高氮化铬薄膜的力学性能。展开更多
基金supported by a 2-Year Research Grant of Pusan National University,Korea
文摘The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.
基金Supported by the National Natural Science Foundation of China under Grant Nos 51301004 and U1330110the Guangdong Innovative and Entrepreneurial Research Team Program under Grant No 2013N080+1 种基金the Shenzhen Science and Technology Research Grant under Grant Nos JCYJ20140903102215536 and JCYJ20150828093127698the City University of Hong Kong Applied Research Grant under Grant No 9667104
文摘A non-sputtering discharge is utilized to verify the effect of replacement of gas ions by metallic ions and consequent decrease in the secondary electron emission coefficient in the discharge current curves in high-power impulse magnetron sputtering （HiPIMS）. In the non-sputtering discharge involving hydrogen, replacement of ions is avoided while the rarefaction still contributes. The initial peak and ensuing decay disappear and all the discharge current curves show a similar feature as the HiPIMS discharge of materials with low sputtering yields such as carbon. The results demonstrate the key effect of ion replacement during sputtering.
基金supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials(GFHIM)of the National Research Foundation of Korea(NRF)funded by the Ministry of Science,ICT&Future Planning(No.2013M3A6B1078874)funded by the National Nature Science Foundation of China(No.51301181)+2 种基金the Tianjin Key Research Program of Application Foundation and Advanced Technology(No.15JCZDJC39700)the Tianjin Science and Technology correspondent project(No.16JCTPJC49500)the Innovation Team Training Plan of Tianjin Universities and colleges(No.TD12-5043)
文摘The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of the Si target.By virtue of electron-probe microanalysis, X-ray diffraction analysis and scanning electron microscopy, the influence of the Si content on the coating composition, phase constituents, deposition rate, surface morphology and microstructure was investigated systematically. In addition, the change rules of micro-hardness, internal stress, adhesion, friction coefficient and wear rate with increasing Si content were also obtained. In this work, the precipitation of silicon in the coating was found.With increasing Si content, the coating microstructure gradually evolved from continuous columnar to discontinuous columnar and quasi-equiaxed crystals; accordingly, the coating inner stress first declined sharply and then kept almost constant. Both the coating hardness and the friction coefficient have the same change tendency with the increase of the Si content, namely increasing at first and then decreasing. The Cr–Si–N coating presented the highest hardness and average friction coefficient for an Si content of about 9.7 at.%, but the wear resistance decreased slightly due to the high brittleness.The above phenomenon was attributed to a microstructural evolution of the Cr–Si–N coatings induced by the silicon addition.
基金National Natural Science Foundation of China(NSFC)(11704260,61405126,61605122,61775146)Shenzhen Science and Technology Project(JCY20150324141711695,JCYJ20160427105041864,JSGG20160429114438287,KQJSCX20160226194031,JCYJ20160422103744090)+1 种基金Beijing University of Posts and Telecommunications(BUPT)(IPOC2015B003)Natural Science Foundation of Guangdong Province(2016A030310049,2016A030310059)
文摘The pulse energy in the ultrafast soliton fiber laser oscillators is usually limited by the well-known wave-breaking phenomenon owing to the absence era desirable real saturable absorber （SA） with high power tolerance and large modulation depth. Here, we report a type of microfiber-based MoTe2 SA fabricated by the magnetron-sputtering deposition （MSD） method. High-energy wave-breaking free soliton pulses were generated with pulse duration/pulse energy/average output power of 229 fs/2.14 nJ/57 mW in the 1.5 μm regime and 1.3 ps/13.8 nJ/ 212 mW in the 2 μm regime, respectively. To our knowledge, the generated soliton pulses at 1.5μm had the shortest pulse duration and the highest output power among the reported erbium-doped fiber lasers mode locked by transition metal dichalcogenides. Moreover, this was the first demonstration of a MoTe2-based SA in fiber lasers in the 2 ltm regime, and the pulse energy/output power are the highest in the reported thulium-doped fiber lasers mode locked by two-dlmensional materials. Our results suggest that a microfiber-based MoTe2 SA could be used as an excellent photonic device for ultrafast pulse generation, and the MSD technique opens a promising route to produce a high-performance SA with high power tolerance and large modulation depth, which are beneficial for high-energy wave-breaking free pulse generation.
基金Funded by the National Natural Science Foundation of China(No.31300787)the National Natural Science Foundation of China China Academy of Engineering Physics(NSAF No.U1330113)+1 种基金the Overseas Famous Teacher Program of Chinese Education Ministry(MS2010XNJT070)the Qingmiao Plan of SWJTU 2015(No.A0920502051517-6)
文摘Ti-Cu films with different Cu concentrations were fabricated by high-power pulsed magnetron sputtering（HPPMS） to release copper ions and catalyze NO to improve the blood compatibility. The Cu concentrations of films were 25.7 at% and 68.8 at%. Pure Ti films were also fabricated. Copper release, catalytic release of nitric oxide（NO）, and blood platelet adhesion of Ti-Cu films were studied. Ti-Cu films released copper ions in PBS solution and more Cu ions were released from films with 68.8 at% Cu. Ti-Cu films had excellent ability of catalytical decomposition of exogenous donor S-nitroso-N-acetyl-DL-penicillamine（SNAP） and as a result, nitric oxide（NO） was generated. The NO generation catalyzed by Ti-Cu films was significantly higher than that by pure Ti films. This was more eminent in the Ti-Cu films with 68.8 at% Cu. The platelet adhesion and activation of Ti-Cu films were significantly inhibited compared to that of pure Ti films in the presence of SNAP. The Ti-Cu film fabricated by HPPMS showed the ability of releasing Cu ions to catalyze SNAP to generate NO to inhibit platelet adhesion and activation.
文摘目的采用高功率脉冲磁控溅射(HIPIMS)制备力学性能优良的氮化铬薄膜。方法采用HIPIMS技术,利用铬靶及氩气、氮气,在不同峰值功率(52.44,91.52,138 k W)下沉积了氮化铬薄膜。采用X射线衍射技术(XRD)、扫描电子显微镜(SEM)、纳米硬度计、摩擦磨损试验机、划痕仪等评价方法,研究了峰值功率对薄膜组织结构和力学性能的影响。结果当峰值功率为52 k W时,靶材原子与离子的比值仅为5.4%,所生成氮化铬薄膜的晶粒尺寸较小,薄膜出现剥落的临界载荷为42 N,薄膜的磨损深度达到349 nm;当峰值功率提高到138 k W时,靶材原子与离子的比值为12.5%,在最大载荷100 N时,薄膜也未出现剥落,同时磨损深度仅为146 nm。结论高的峰值功率能够提高靶材原子离化率和离子对基片的轰击效应,使氮化铬薄膜晶粒重结晶而长大,消除部分应力,使薄膜表现出优良的耐磨性和韧性,因此提高靶材峰值功率可以提高氮化铬薄膜的力学性能。
