基于0.18μm CMOS工艺设计了一种低噪声、高电源电压抑制比(PSRR)的新型带隙基准源(BGR)。使用低噪声的垂直双极结型晶体管取代MOS晶体管作为运算放大器输入,削减了低频闪烁噪声;通过引入三输入的运算放大器将电源扰动传递到电流管的栅...基于0.18μm CMOS工艺设计了一种低噪声、高电源电压抑制比(PSRR)的新型带隙基准源(BGR)。使用低噪声的垂直双极结型晶体管取代MOS晶体管作为运算放大器输入,削减了低频闪烁噪声;通过引入三输入的运算放大器将电源扰动传递到电流管的栅极,极大程度地降低了电源纹波对输出基准电压的干扰;并通过RC低通滤波器进一步改善噪声和PSRR性能;利用修调电路修调工艺偏差,实现了良好的温度特性。实测结果表明,该BGR的PSRR在57.7 Hz下为-108 d B,与仿真结果基本一致(-102.3 d B@50 Hz);输出电压噪声在10 Hz时为42.20 n V/√Hz,通过新提出的测试方法在0.1~1 k Hz测得总噪声电压有效值低于0.503 5μV;在-40~125℃,基准电压温度系数可以修调至20×10^(-6)/℃以下,最小值仅14.09×10^(-6)/℃;BGR面积为254.1μm×370.0μm,功耗约为8.6μA@3 V。展开更多
An extremely low power voltage reference without resistors is presented for power-aware ASICs. In order to reduce the power dissipation, an Oguey current reference source is used to reduce the static current; a cascod...An extremely low power voltage reference without resistors is presented for power-aware ASICs. In order to reduce the power dissipation, an Oguey current reference source is used to reduce the static current; a cascode current mirror is used to increase the power supply rejection ratio （PSRR） and reduce the line sensitivity of the circuit. The voltage reference is fabricated in SMIC 0.18μm CMOS process. The measured results for the voltage reference demonstrate that the temperature coefficient of the voltage is 66 ppm/℃ in a range from 25 to 100 ℃. The line sensitivity is 0.9% in a supply voltage range of 1.8 to 3,3 V, and PSRR is -49 dB at 100 Hz. The power dissipation is 200 nW. The chip area is 0.01 mm2. The circuit can be used as an elementary circuit block for power-aware ASICs.展开更多
介绍了一款基于0.4μm Bi CMOS工艺应用于温度补偿晶体振荡器的高性能温度传感器的设计。该温度传感器利用基极-发射极电压(VBE)减去与绝对温度成正比(PTAT)电流在电阻上的压降的原理,产生了与温度成线性的输出电压。采用包含两个串联...介绍了一款基于0.4μm Bi CMOS工艺应用于温度补偿晶体振荡器的高性能温度传感器的设计。该温度传感器利用基极-发射极电压(VBE)减去与绝对温度成正比(PTAT)电流在电阻上的压降的原理,产生了与温度成线性的输出电压。采用包含两个串联发射结电压和低失调运算放大器的PTAT电流产生器,实现了高精度的PTAT电流;采用具有负温度系数的电阻,补偿了VBE的高阶温度特性;采用共源共栅结构,提高了输出电压的电源抑制。后仿真结果表明,当电源电压为3.3 V,温度范围为-40~85℃时,温度传感器的输出电压范围为0.964~1.490V,输出电压的斜率范围为-4.245×10-3^-4.160×10-3,斜率变化范围为8.5×10-5,表明该温度传感器具有非常高的线性度。展开更多
文摘基于0.18μm CMOS工艺设计了一种低噪声、高电源电压抑制比(PSRR)的新型带隙基准源(BGR)。使用低噪声的垂直双极结型晶体管取代MOS晶体管作为运算放大器输入,削减了低频闪烁噪声;通过引入三输入的运算放大器将电源扰动传递到电流管的栅极,极大程度地降低了电源纹波对输出基准电压的干扰;并通过RC低通滤波器进一步改善噪声和PSRR性能;利用修调电路修调工艺偏差,实现了良好的温度特性。实测结果表明,该BGR的PSRR在57.7 Hz下为-108 d B,与仿真结果基本一致(-102.3 d B@50 Hz);输出电压噪声在10 Hz时为42.20 n V/√Hz,通过新提出的测试方法在0.1~1 k Hz测得总噪声电压有效值低于0.503 5μV;在-40~125℃,基准电压温度系数可以修调至20×10^(-6)/℃以下,最小值仅14.09×10^(-6)/℃;BGR面积为254.1μm×370.0μm,功耗约为8.6μA@3 V。
基金Project supported by the National Natural Science Foundation of China(Nos.61161003,61264001,61166004)the Guangxi Natural Science Foundation(No.2013GXNSFAA019333)
文摘An extremely low power voltage reference without resistors is presented for power-aware ASICs. In order to reduce the power dissipation, an Oguey current reference source is used to reduce the static current; a cascode current mirror is used to increase the power supply rejection ratio （PSRR） and reduce the line sensitivity of the circuit. The voltage reference is fabricated in SMIC 0.18μm CMOS process. The measured results for the voltage reference demonstrate that the temperature coefficient of the voltage is 66 ppm/℃ in a range from 25 to 100 ℃. The line sensitivity is 0.9% in a supply voltage range of 1.8 to 3,3 V, and PSRR is -49 dB at 100 Hz. The power dissipation is 200 nW. The chip area is 0.01 mm2. The circuit can be used as an elementary circuit block for power-aware ASICs.
文摘介绍了一款基于0.4μm Bi CMOS工艺应用于温度补偿晶体振荡器的高性能温度传感器的设计。该温度传感器利用基极-发射极电压(VBE)减去与绝对温度成正比(PTAT)电流在电阻上的压降的原理,产生了与温度成线性的输出电压。采用包含两个串联发射结电压和低失调运算放大器的PTAT电流产生器,实现了高精度的PTAT电流;采用具有负温度系数的电阻,补偿了VBE的高阶温度特性;采用共源共栅结构,提高了输出电压的电源抑制。后仿真结果表明,当电源电压为3.3 V,温度范围为-40~85℃时,温度传感器的输出电压范围为0.964~1.490V,输出电压的斜率范围为-4.245×10-3^-4.160×10-3,斜率变化范围为8.5×10-5,表明该温度传感器具有非常高的线性度。
