Microstructure and properties of electronic packaging box with high silicon aluminum-base alloy by semi-solid thixoforming

The electronic packaging box with high silicon aluminum-base alloy was prepared by semi-solid thixoforming technique.The flow characteristic of the Si phase was analyzed.The microstructures of different parts of the box were observed by optical microscopy and scanning electron microscopy,and the thermophysical and mechanical properties of the box were tested.The results show that there exists the segregation phenomenon between the primary Si phase and the liquid phase during thixoforming,the liquid phase flows from the box,and the primary Si phase accumulates at the bottom of the box.The volume fraction of primary Si phase decreases gradually from the bottom to the walls.Accordingly,the thermal conductivities of bottom center and walls are 107.6 and 131.5 W/（m·K）,the coefficients of thermal expansion（CTE） are 7.9×10-6 and 10.6×10-6 K-1,respectively.The flexural strength increases slightly from 167 to 180 MPa.The microstructures and properties of the box show gradient distribution overall.

Microstructure and mechanical properties of a new type of austempered boron alloyed high silicon cast steel

In the present paper, a new type of austempered boron alloyed high silicon cast steel has been developed, and its microstructures and mechanical properties at different temperatures were investigated. The experimental results indicate that the boron alloyed high silicon cast steel comprises a dendritic matrix and interdendritic eutectic borides in as-cast condition. The dendritic matrix is made up of pearlite, ferrite, and the interdendritic eutectic boride is with a chemical formula of M2B （M represents Fe, Cr, Mn or Mo） which is much like that of carbide in high chromium white cast iron. Pure ausferrite structure that consists of bainitic ferrite and retained austenite can be obtained in the matrix by austempering treatment to the cast steel. No carbides precipitate in the ausferrite structure and the morphology of borides remains almost unchanged after austempering treatments. Secondary boride particles precipitate during the course of austenitizing. The hardness and tensile strength of the austempered cast steel decrease with the increase of the austempering temperature, from 250℃ to 400 ℃. The impact toughness is 4-11 J.cm^-2 at room temperature and the impact fracture fractogragh indicates that the fracture is caused by the brittle fracture of the borides.

Microstructure and properties of high silicon aluminum alloy with 2% Fe prepared by rheo-casting

The morphology changes of both Fe-containing intermetallic compounds and the primary Si phase of Al-20Si-2Fe- 2Cu-0.4Mg-1.0Ni-0.5Mn （mass fraction, %） alloy produced by semi-solid rheo-diecasting were studied. The semi-solid slurry of high silicon aluminum alloy was prepared by direct ultrasonic vibration （DUV） which was imposed on the alloy near the liquidus temperature for about 2 rain. Then, standard test samples of 6.4 mm in diameter were formed by semi-solid rheo-diecasting. The results show that the DUV treatment suppresses the formation of needle-like ,β-Al5（Fe,Mn）Si phase, and the Fe-containing intermetallic compounds exist in the form of fine Al4（Fe, Mn）Si2 particles. Additionally, the primary Si grows up as fine and round particles with uniform distribution in α（Al） matrix of this alloy under DUV treatment. The tensile strengths of the samples at the room temperature and 573 K are 230 MPa and 145 MPa, respectively. The coefficient of thermal expansion （CTE） between 25 ℃ and 300 ℃ is 16.052 8×10^-6 ℃^-1, and the wear rate is 1.55%. The hardness of this alloy with 2% Fe reaches HB146.3. It is discovered that modified morphology and uniform distribution of the Fe-containing intermetallic compounds and the primary Si phase are the main reasons for reducing the CTE and increasing the wear resistance of this alloy.

Pulsed Nd:YAG laser cladding of high silicon content coating on low silicon steel

A pulsed Nd：YAG （yttrium aluminum garnet） laser-based technique was employed to clad low silicon steel with preplaced Si and Fe mixed powders for high Si content. The surface morphology, microstructural evolution, phase composition, and Si distribution, within the obtained cladding coatings, were characterized by optical microscopy （OM）, field emission scanning electron microscopy （FE-SEM）, with associated energy dispersive spectroscopy （EDS）, transmission electron microscopy （TEM）, and X-ray diffraction （XRD）. The microhardness was also measured along the depth direction of the specimens, A crack- and pore-free cladding coating through excellent metallurgical bonding with the substrate was successfully prepared on low silicon steel by means of optimized single-track and multi-track laser cladding. The phases of the coating are a-Fe, T-Fe, and FeSi. The high microhardness of the lasercladding zone is considered as an increase in Si content and as the refined microstructure produced by the laser treatment. The Si contents of the cladding coatings were about 5.8wt% in the single-track cladding and 6.5wt% in the multi-track cladding, respectively.

Effects of CaO and Na2CO3 on the Reduction of High Silicon Iron Ores

The effects of CaO and Na2CO3 on the reduction of high silicon iron ores at 1 250 ℃ were studied. The experimental results showed that the metallization rate was significantly hindered by the addition of CaO and Na2CO3, particularly at the early stage of roasting, compared to the rate without additives. In the absence of additives, iron oxides were quickly reduced to metallic iron, and fayalite was difficult to form. When CaO and Na2CO3 were added, the low reducible iron-containing silicate compounds formed and melted, subsequently retarding the metallization process. The inhibition of Na2CO3 was more noticeable than that of CaO, and higher Na2CO3 doses resulted in stronger inhibition of the increased metallization rate. However, when Na2CO3 was added prior to CaO, the liquid phase formed, which facilitated the growth of the metallic phase. To reinforce the separation of the metallic phase and slag, an appropriate amount of liquid phase generated during the reduction is necessary. It was shown that when 10% CaO and 10% Na2CO3 were added, a high metallization rate and larger metallic iron particles were obtained, thus further decreasing the required Na2CO3 dosage.

Modification Effect of P+Sr+Ce Compound on Microstructure and Properties of Cast High Silicon Heat-Resist Aluminum Alloy

The P ＋ Sr ＋ Ce compound modification technologies of as-cast Al-21Si-1.5Cu-1.5Ni- 2.5Fe- 0.5Mg alloy were investigated by means of orthogonal test. Orthogonal test results show that 3% （CaH2PO4 ＋ 2CASO4）＋ 0.2%Sr ＋ 0.2%Ce is the optimum additive of modification treatment which can fine eutectic and primary silicon also can change the form of rich-iron phase at same time. The needle form of rich-iron phase is Al9FeSi3, which is prored by X-ray diffraction analysis and X-ray energy spectrum analysis. After compound modification treatment, the needle form of rich-iron phase disappeared and the fish bone form of rich-iron and rich-Ce phase that is AlsCeFe emerged. Both at room temperature and at 300℃, the tensile strength of the alloy after the modification treatment with the optimum additive is 30% lager than that of the alloy unmodified. Observed by SEM, the brittle intercrystalline tensile fracture changed into a blended one in which has many dimples.

Recent progress of high silicon electrical steels

This paper summarized recent progress of high silicon grain-oriented and non-oriented electrical steels. Technical development in composition adjustment, inclusion control and process optimization was introduced, and future development trend was explored. In addition, a brief introduction was provided to technical progress of high silicon thingauge strips with a Si content of 6.5%.

Microstructure and properties of electronic packaging shell with high silicon carbide aluminum-base composites by semi-solid thixoforming

The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of different parts of the shell were observed by scanning electron microscopy and optical microscopy, and the thermophysical and mechanical properties of the shell were tested. The results show that there exists the segregation phenomenon between the Si C particulate and the liquid phase during thixoforming, the liquid phase flows from the shell, and the Si C particles accumulate at the bottom of the shell. The volume fraction of Si C decreases gradually from the bottom to the walls. Accordingly, the thermal conductivities of bottom center and walls are 178 and 164 W·m-1·K-1, the coefficients of thermal expansion(CTE) are 8.2×10-6 and 12.6×10-6 K-1, respectively. The flexural strength decreases slightly from 437 to 347 MPa. The microstructures and properties of the shell show gradient distribution.

Multiphase microstructure formation and its effect on fracture behavior of medium carbon high silicon high strength steel

This work investigated the evolution of multiphase microstructure and impact fracture behavior of medium carbon high silicon high strength steel subjected to the austempering treatment at 240,360,and400℃.The results show that martensite,bainite,and retained austenite(RA)are the main microstructural phases.The austempering treatments at 360 and 400℃ caused the formation of carbon-poor ferrite in the matrix,and the transformation of ultrafine bainite into coarse lath bainite and granular bainite,respectively.Thick filmy RA was distributed between bainite laths.The polygonal martensiteaustenite islands and blocky RA formed along the grain boundaries.The average carbon concentration in the matrix decreased with the temperature increase,while the impact toughness initially increased and then dropped with temperature.The quasi-cleavage brittle fracture dominated the impact fracture mechanism of the sample austempered at 240℃ by forming tearing surfaces and tearing steps.The microcracks disappeared in the RA on the prior austenite grain boundaries.On the other side,the fracture surface of the sample austempered at 360℃ exhibited ductile fracture with deep dimples and brittle fracture with cleavage river patterns.The polygonal martensite-austenite islands or blocky RA constrained the microcracks.After austempered at 400℃,the brittle fracture was dominant,showing river patterns,and the microcracks propagated through the granular bainite without any resistance.

6.5 wt%Si high silicon steel sheets prepared by composite electrodeposition in magnetic field

A new preparation method of near-net-shape 6.5 wt% Si high silicon steel sheets was proposed by combining composite electrodeposition(CED) and diffusion annealing under magnetic field. The obtained sheets were characterized by scanning electron microscopy, energy dispersive spectrometry, analytical balance and a silicon steel material measurement system. The results show that the surface morphology,the elemental distribution, the cathode current efficiency and the silicon content of coatings were obviously influenced by the micro and macro magnetohydrodynamics(MHD) flows under magnetic field.With the effect of magnetic field, the silicon particles content of coatings showed an increasing trend and the diffusion process showed that an approximately uniform 6.5 wt% silicon steel sheet has been successfully obtained. The magnetism measurement showed that the high silicon steel sheet has the lower iron loss, and the iron loss further decreased under magnetic field. The new method proposed in this article,which is more environmentally friendly and low energy consumption, is feasible to prepare high silicon steel sheets.

Characterization of Microstructure and Texture in Grain-Oriented High Silicon Steel by Strip Casting

Grain-oriented 4.5 wt% Si and 6.5 wt% Si steels were produced by strip casting, warm rolling, cold rolling, primary annealing, and secondary annealing. Goss grains were sufficiently developed and covered the entire surface of the secondary recrystallized sheets. The microstructure and texture was characterized by OM, EBSD, TEM, and XRD. It was observed that after rolling at 700 ℃, the 6.5 wt% Si steel exhibited a considerable degree of shear bands, whereas the 4.5 wt% Si steel indicated their rare presence. After primary annealing, completely equiaxed grains showing strong y-fiber texture were presented in both alloys. By comparison, the 6.5 wt% Si steel showed smaller grain size and few favorable Goss grains. Additionally, a higher density of fine precipitates were exhibited in the 6.5 wt% Si steel, leading to a ~ 30-s delay in primary recrystallization. During secondary annealing, abnormal grain growth of the 6.5 wt% Si steel occurred at higher temperature compared to the 4.5 wt% Si steel, and the final grain size of the 6.5 wt% Si steel was greater. The magnetic induction B8 of the 4.5 wt% Si and the 6.5 wt% Si steels was 1.75 and 1.76 T, respectively, and the high- frequency core losses were significantly improved in comparison with the non-oriented high silicon steel.

Preparing High Silicon Steel by Sintering Fe-6.5%Si Powder Compacts in Static Magnetic Field

In this research,sintering Fe-6.5wt%Si Compact specimen in static magnetic field is proposed for preparing high silicon steel.It is found that the densifications of the compacts are affected remarkably by superimposing magnetic field.The density of the compacts can be increased when the MFD is higher than 0.2 T.The highest relative density of the samples is 97.2%.The magnetic property of silicon steel could be improved when superimpose static magnetic field in sintering process,the permeability of the compact are two times of that without magnetic field,and the magnetic property parallel to the direction of the magnetic field was evidently higher than that in perpendicular direction.

Punchability and Punching Fracture Behavior of High Silicon Steel Sheets

The 0.2-0.3mm thick cold-rolled sheets and annealed sheets of high silicon steel were produced by rolling process,then punching tests were carried out at room temperature to 150℃.The punchability and punching fracture behavior were investigated by means of scanning electron microscope（SEM）and electron back-scattered diffraction（EBSD）.It is found that cold-rolled sheets of high silicon steel show good punchability under the condition of 0.01 mm punch-die clearance and at the temperature of 100℃;the punchability of annealed sheets with fine grain size is better than that of annealed sheets with coarse grain size;the punching temperature of 150℃is suitable for annealed high silicon steel sheets especially with coarse grain size on account of punching edge quality.The major cleavage planes of annealed high silicon steel sheets are{100}crystallographic planes on which brittle fracture occurs at low temperatures.The cleavage systems include{100}〈110〉and{100}〈100〉,and cleavage fracture is completed by one or both of them.The punchability of high silicon steel sheets is related with punching temperature,grain size and ordering degree.Reducing ordering degree,increasing punching temperature,as well as refining grain size can improve the ductility and punchability of high silicon steel sheets.

Thermodynamic Calculations of Melt in Melt Pool During Laser Cladding High Silicon Coatings

Based on the Miedema＇s formation heat model for binary alloys and the Toop＇s asymmetric model for ternary alloys, the formation heat, excess entropy, and activity coefficients of silicon ranging from 1 900 K to 4 100 K in the Fe-Si-C melt formed during the laser cladding high silicon coatings process were calculated. The results indicated that all values of lnγ^0Si, ε^CSi,ρ^SiSi and ρ^CSi are negative in the temperature range and these values increase as the temperature increases. And all values of ε^SiSi and ρ^Si-CSi are positive and these values decrease with increasing temperature. The iso-activity lines of silicon are distributed axisymmetrically to the incident laser beam in the melt pool vertical to the laser scanning direction. And the iso-activity lines of silicon in the front of the melt pool along the laser scanning direction are more intensive than those in the back of the melt pool. The activity of silicon on the bottom of the melt pool is lower than that in the effecting center of laser beam on the top surface of the melt pool and it may be the important reason for the formation of the silicides and excellent metallurgical bonding between the laser cladding coating and the substrate.

Thermodynamic Calculation for Silicon ModifiedAISI M2 High Speed Tool Steel

During high speed tool steel production up to 0.2 wt % silicon is added, primarily to react with oxygen e.g. silicon acts as a de-oxidizer. If more than 0.2 wt % silicon is added, it serves to improve the deep hardening properties. An addition up to ~1 wt % silicon provides hardness and improves temper-stability but reduces the ductility. At high concentration, silicon causes embrittlement. Alloying with silicon raises the solubility of carbon in the matrix and hence the as-quenched hardness. It has virtually no influence on the carbide distribution, but it promotes the formation of M6C type carbides. The many essential alloy additions to iron (C, W, Mo, V, Cr, Si) make the high speed tool steel, HSS a complex multi-component system. Its complete experimental investigation would require enormous time and effort. Instead, the CALPHAD method has been successfully used for computation of phase equilibrium the multi-component HSS system. In the present work, the Thermo-Calc program has been applied to the system Fe-C-Cr-W-Mo-V-Si with the thermodynamic information contained in the solid-solution-database of the TCFE. In the present work, some temperature-concentration diagrams for silicon modified AISI M2 steel are presented by calculated quantities (melting and transformation temperatures, amount and compositions of phases). Calculated data are compared with standard AISI M2 high speed tool steel.

A Highly Compact Third-Order Silicon Elliptical Micro-Ring Add-Drop Filter with a Large Free Spectral Range

We demonstrate a highly compact third-order elliptical micro-ring add-drop filter based on a silicon-on-insulator wafer. The elliptical micro-ring resonator has a major radius of 6μm （minor radius of 4.112μm） and a large free spectral range of 18 nm. Experimental results show a box-like channel dropping response, which has a 3 dB bandwidth of -2.7nm, high out-of-band signal rejection of around 40dB and a very low drop loss （〈0.5dB）. Simulation agrees well with the experiments. The footprint of the whole chip is only 0.0003mm2.

Preparation of Silicon Carbide with High Properties

In order to prepare silicon carbide with high properties, three kinds of SiC powders A, B, and C with different composition and two kinds of additives, which were Y2O3-A12O3 system and Y2O3-La2O3 system, were used in this experiment. The properties of hot-pressed SiC ceramics were measured. With the same additives, different SiC powder resulted in different properties. On the other hand, with the same SiC powder, increasing the amount of the additive Y2O3Al2O3 improved properties of SiC ceramics at room temperature, and increasing the amount of the additive Y2O3-La2O3 improved property SiC ceramics at elevated temperature. In addition. the microstructure of SiC ceramics was studied by scanning electron microscopy.

Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_(on,sp)) are obtained. The results indicate that the HKSD device has a higher BV and lower R_(on,sp) compared to the SD device and HK device.

Effect of UV radiation aging on creepage discharge characteristics of high temperature vulcanized silicon rubber at high altitude

The physicochemical properties and creepage discharge characteristics of aged high temperature Vulca nized(HTV)silicone rubber materials were investigated by ultraviolet radiati on(UV)aging method in this study.The experimental results show that as the aging time increases,the creepage discharge flashover voltage increases first and then decreases.But the aging time has little effect on the creepage discharge inception voltage.With the aging time prolonged,the discharge endurance time of HTV silicone rubber is shortened,and the creepage discharge development velocity is accelerated.In the short time of applying voltage to aging material,the magnitude of discharge in creases rapidly.According to the partial discharge characteristic parameters of creepage discharge,the whole creepage discharge process is partitioned into four stages.Compared with unaged HTV silicone rubber,the aged HTV silicone rubber has less fluctuation in performance parameters and a clear trend.The study found that UV aging not only affects the physicochemical and hydrophobic properties of the HTV silicone rubber,but also accelerates the development of creepage discharge under AC voltage.

A new analytical model of high voltage silicon on insulator(SOI) thin film devices

A new analytical model of high voltage silicon on insulator （SOI） thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon fihn thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage （VB,V） are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.