This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the t...This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.展开更多
建立了6H SiC材料和器件模型,应用二维器件仿真软件MEDICI对所设计的亚微米6H SiC CMOS倒相器的温度特性进行了研究.研究结果表明,该倒相器在600K的高温下仍可以正常工作,且具有良好的电压转移特性和瞬态特性;在300～600K的温度范围内,...建立了6H SiC材料和器件模型,应用二维器件仿真软件MEDICI对所设计的亚微米6H SiC CMOS倒相器的温度特性进行了研究.研究结果表明,该倒相器在600K的高温下仍可以正常工作,且具有良好的电压转移特性和瞬态特性;在300～600K的温度范围内,倒相器阈值电压由1.218V变化到1.274V,变化幅度较小.展开更多
基金Supported by the National Native Science Foundation of China
文摘This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.
文摘建立了6H SiC材料和器件模型,应用二维器件仿真软件MEDICI对所设计的亚微米6H SiC CMOS倒相器的温度特性进行了研究.研究结果表明,该倒相器在600K的高温下仍可以正常工作,且具有良好的电压转移特性和瞬态特性;在300～600K的温度范围内,倒相器阈值电压由1.218V变化到1.274V,变化幅度较小.
文摘为了减小低电源电压以及短沟道效应对放大器的影响,获得低电压高增益的放大器,提出了一种基于65 nm CMOS工艺技术的全差分运算跨导放大器(OTA).采用基于增益增强技术的折叠共源共栅拓扑结构,使放大器具有轨到轨输入及大输出摆幅特性,同时兼备高速、高增益及低功耗优点.电路仿真结果表明,其直流增益为82 d B,增益带宽为477 MHz,相位裕度为59°.正常工艺角下稳定时间为10 ns,稳定精度为0.05%,而功耗仅为4.8 m W.
