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Thermal expansion of lattice parameter of (powder) silicon up to 1473 K
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作者 XINGXianran CHENJun DENGJinxia LIUGuirong 《Rare Metals》 SCIE EI CAS CSCD 2004年第4期364-367,共4页
The XRPD (X-ray powder diffxactometry) patterns of silicon powder with a unit cell structure of diamond were determined from 298 to 1473 K. Lattice parameters of Si linearly increase with temperature. The thermal shif... The XRPD (X-ray powder diffxactometry) patterns of silicon powder with a unit cell structure of diamond were determined from 298 to 1473 K. Lattice parameters of Si linearly increase with temperature. The thermal shifts of the positions of all reflection peaks are linearly correlated with the temperature. The coefficients of the intrinsic linear thermal expansion and volumetric thermal expansion were determined as 3.87×10-6/K and 1.16×10-5/K respectively. It indicates that Si is still a suitable standard in the XRPD method at high temperatures. 展开更多
关键词 metallurgical physical chemistry thermal expansion high temperature X-ray powder diffraction (HTXRPD) silicon.
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