A novel voltage-withstand substrate with high-K（HK, k 〉 3.9, k is the relative permittivity） dielectric and low specific on-resistance（Ron,sp） bulk-silicon, high-voltage LDMOS（HKLR LDMOS）is proposed in this pap...A novel voltage-withstand substrate with high-K（HK, k 〉 3.9, k is the relative permittivity） dielectric and low specific on-resistance（Ron,sp） bulk-silicon, high-voltage LDMOS（HKLR LDMOS）is proposed in this paper. The high-K dielectric and highly doped interface N＋-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration（Nd） and reshape the electric field distribution. The highly doped N＋-layer under the high-K dielectric acts as a low resistance path to reduce the Ron,sp. The new device with the high breakdown voltage（BV）, the low Ron,sp, and the excellent figure of merit（FOM = BV^2/Ron,sp） is obtained. The BV of HKLR LDMOS is 534 V, Ron,sp is 70.6 m？·cm^2, and FOM is 4.039 MW·cm^（-2）.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61306094)the Project of Hunan Provincial Education Department,China(Grant No.13ZA0089)+1 种基金the Introduction of Talents Project of Changsha University of Science&Technology,China(Grant No.1198023)the Construct Program of the Key Discipline in Hunan Province,China
文摘A novel voltage-withstand substrate with high-K（HK, k 〉 3.9, k is the relative permittivity） dielectric and low specific on-resistance（Ron,sp） bulk-silicon, high-voltage LDMOS（HKLR LDMOS）is proposed in this paper. The high-K dielectric and highly doped interface N＋-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration（Nd） and reshape the electric field distribution. The highly doped N＋-layer under the high-K dielectric acts as a low resistance path to reduce the Ron,sp. The new device with the high breakdown voltage（BV）, the low Ron,sp, and the excellent figure of merit（FOM = BV^2/Ron,sp） is obtained. The BV of HKLR LDMOS is 534 V, Ron,sp is 70.6 m？·cm^2, and FOM is 4.039 MW·cm^（-2）.
