Electrical power transmission is dominated by overhead line systems at present.This is mainly based on more than hundred years of experience of utilities in running overhead lines.Furthermore,overhead lines have prove...Electrical power transmission is dominated by overhead line systems at present.This is mainly based on more than hundred years of experience of utilities in running overhead lines.Furthermore,overhead lines have proven their operational reliability and functional assurance.In the past,cables were used in distribution networks in urban areas for the most part with the exception of direct current submarine cables.New developments of high voltage XLPE cables make it possible to use this technology for EHV level applications in transmission networks.Within this paper,mixed network configurations,consisting of overhead lines and high voltage cables,are investigated.An exemplary EHV transmission line with a total length of about 100 km,which is quite typical for Central Europe,has been studied.Several different line combinations are discussed with varied rates between overhead line sections and cable sections length in practice.The length of the cable sections are ranging from several kilometers up to lengths of 100 km.In this paper the work focuses on the transient behavior of combined 400 kV overhead and cable lines during switching processes and lightning impacts.A number of calculations were carried out to get an overview of the transient stress in numerous network nodes along the transmission system.Numerical programs like ATP/EMTP have been used for these simulations.Peak values and wave shapes of the transient voltage stress have been evaluated,based on different systems and within possible combinations.In respect of the insulation coordination and transient stress at network nodes,the voltage-time trends are also analyzed.The combination of high voltage overhead and cable transmission systems,especially such with lengths of more than about 50 km,are making tightened and extended demands to the network design,to the operational management and of course to the network protection also.As an output of this investigations,the results might influence the strategy in running this new type of combined transmission systems.展开更多
A cabled ocean observatory system that can provide abundant power and broad bandwidth communication for undersea instruments is developed. A 10 kV direct current （kVDC） with up to 10 kW power, along with l Gigabit/s...A cabled ocean observatory system that can provide abundant power and broad bandwidth communication for undersea instruments is developed. A 10 kV direct current （kVDC） with up to 10 kW power, along with l Gigabit/sec Ethemet communication, can be transmitted from the shore to the seafloor through an umbilical armored cable. A subsea junction box is fixed at a cable terminal, enabling the extension of up to nine connections. The box consists of three main pressure vessels that perform power conversion, power distribution, and real-time communication functions. A method of stacking modules is used to design the power conversion system in order to reduce the 10 kV voltage to levels that can power the attached instruments. A power distribution system and an Ethemet communication system are introduced to control the power supply and transmit data or commands between the terminals and the shore station, respectively. Specific validations of all sections were qualified in a laboratory environment prior to the sea trial. The ocean observatory system was then deployed at the coast of the East China Sea along with three in situ instruments for a 14-day test. The results show that this high voltage-powered observatory system is effective for subsea long-term and real-time observations.展开更多
10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm^2 with a die size of 3 mm× 3 mm. A step space...10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm^2 with a die size of 3 mm× 3 mm. A step space modulated junction termination extension(SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the IGBTs.The SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at-10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell(H-cell) structure is designed and compared with the conventional interdigital cell(I-cell) structure. At an on-state current of 50 A/cm^2, the voltage drops of I-cell IGBT and H-cell IGBT are10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm^2, the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm^2 and 38.9 A/cm^2 with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m?·cm^2 and 56.92 m?·cm^2, respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.展开更多
文摘Electrical power transmission is dominated by overhead line systems at present.This is mainly based on more than hundred years of experience of utilities in running overhead lines.Furthermore,overhead lines have proven their operational reliability and functional assurance.In the past,cables were used in distribution networks in urban areas for the most part with the exception of direct current submarine cables.New developments of high voltage XLPE cables make it possible to use this technology for EHV level applications in transmission networks.Within this paper,mixed network configurations,consisting of overhead lines and high voltage cables,are investigated.An exemplary EHV transmission line with a total length of about 100 km,which is quite typical for Central Europe,has been studied.Several different line combinations are discussed with varied rates between overhead line sections and cable sections length in practice.The length of the cable sections are ranging from several kilometers up to lengths of 100 km.In this paper the work focuses on the transient behavior of combined 400 kV overhead and cable lines during switching processes and lightning impacts.A number of calculations were carried out to get an overview of the transient stress in numerous network nodes along the transmission system.Numerical programs like ATP/EMTP have been used for these simulations.Peak values and wave shapes of the transient voltage stress have been evaluated,based on different systems and within possible combinations.In respect of the insulation coordination and transient stress at network nodes,the voltage-time trends are also analyzed.The combination of high voltage overhead and cable transmission systems,especially such with lengths of more than about 50 km,are making tightened and extended demands to the network design,to the operational management and of course to the network protection also.As an output of this investigations,the results might influence the strategy in running this new type of combined transmission systems.
基金supported by the National High-Technology Research and Development Program of China(Grant No.2007AA091201-1)
文摘A cabled ocean observatory system that can provide abundant power and broad bandwidth communication for undersea instruments is developed. A 10 kV direct current （kVDC） with up to 10 kW power, along with l Gigabit/sec Ethemet communication, can be transmitted from the shore to the seafloor through an umbilical armored cable. A subsea junction box is fixed at a cable terminal, enabling the extension of up to nine connections. The box consists of three main pressure vessels that perform power conversion, power distribution, and real-time communication functions. A method of stacking modules is used to design the power conversion system in order to reduce the 10 kV voltage to levels that can power the attached instruments. A power distribution system and an Ethemet communication system are introduced to control the power supply and transmit data or commands between the terminals and the shore station, respectively. Specific validations of all sections were qualified in a laboratory environment prior to the sea trial. The ocean observatory system was then deployed at the coast of the East China Sea along with three in situ instruments for a 14-day test. The results show that this high voltage-powered observatory system is effective for subsea long-term and real-time observations.
基金Project supported by the National Basic Research Program of China(Grant No.2015CB759600)the Science Challenge Project,China(Grant No.TZ2018003)+3 种基金the National Natural Science Foundation of China(Grant Nos.61474113,61574140,and 61804149)the Beijing NOVA Program,China(Grant Nos.2016071and Z181100006218121)the Beijing Municipal Science and Technology Commission Project,China(Grant No.Z161100002116018)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2012098)
文摘10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm^2 with a die size of 3 mm× 3 mm. A step space modulated junction termination extension(SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the IGBTs.The SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at-10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell(H-cell) structure is designed and compared with the conventional interdigital cell(I-cell) structure. At an on-state current of 50 A/cm^2, the voltage drops of I-cell IGBT and H-cell IGBT are10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm^2, the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm^2 and 38.9 A/cm^2 with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m?·cm^2 and 56.92 m?·cm^2, respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.
