Phase control of magnetron sputtering deposited Gd_2O_3 thin films as high-κ gate dielectrics

Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si（001） substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570 ℃ were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density （JL） of 10-5 A/cm^2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6-13 nm. Through the comparison between films grown at 450 and 570 ℃, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.

Materials Design on the Origin of Gap States in a High-κ/GaAs Interface

Given the demand for constantly scaling microelectronic devices to ever smaller dimensions, a SiO_2 gate dielectric was substituted with a higher dielectric-constant material, Hf(Zr)O_2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant(high-κ) dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping. III-V and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf(Zr)O_2/III-V(Ge) has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding conflgurations at Hf(Zr)O_2/III-V(Ge) interfaces for the optimal design of device interfaces. Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential. Here, we utilize firstprinciple calculations to investigate the interface between HfO_2 and Ga As. Our study shows that As—As dimer bonding, Ga partial oxidation(between 3+ and 1+) and Ga— dangling bonds constitute the major contributions to gap states. These findings provide insightful guidance for optimum interface passivation.

Leakage current mechanisms of ultrathin high-κ Er_2O_3 gate dielectric film

A series of high dielectric material Er2O3 thin films with different thicknesses were deposited on p-type Si（100）substrate by pulse laser deposition at different temperatures.Phase structures of the films were determined by means of X-ray diffraction（XRD）and high resolution transmission electron microscopy（HRTEM）.Leakage current density was measured with an HP4142B semiconductor parameter analyzer.The XRD and HRTEM results reveal that Er2O3 thin films deposited below 400°C are amorphous,while films deposited from 400 to 840°C are well crystallized with（111）-preferential crystallographic orientation.I-V curves show that,for ultrathin crystalline Er2O3 films,the leakage current density increases by almost one order of magnitude from 6.20×10^-5 to 6.56×10^-4 A/cm^2,when the film thickness decreases by only 1.9 nm from 5.7 to 3.8 nm.However the leakage current density of ultrathin amorphous Er2O3 films with a thickness of 3.8 nm is only 1.73×10^-5 A/cm^2.Finally,analysis of leakage current density showed that leakage of ultrathin Er2O3 films at high field is mainly caused by Fowler-Nordheim tunneling,and the large leakage of ultrathin crystalline Er2O3 films could arise from impurity defects at the grain boundary.

High- and Ultrahigh-pressure Metamorphism and Retrogressive Textures of Gneiss in the Donghai Area——Evidence from gneisses in drillhole ZK2304

In the gneisses from the drillhole ZK2304 of the Donghai area, there have been preserved high- and ultrahigh-pressure metamorphic mineral assemblages, a series of complicated retrogressive textures and relevant metamorphic reactions. In addition to garnet, jadeititic-clinopyroxene and rutile, other peak stage (M2) minerals in some gneisses include phengite, aragonite and coesite or quartz pseudomorphs after coesite. The typical peak-stage mineral assemblages in gneisses are characterized by garnet + jadeitic-clinopyroxene + rutile + coesite, garnet + jadeitic-clinopyroxene + phengite + rutile ± coesite and garnet + jadeitic-clinopyroxene + aragonite + rutile ± coesite. The grossular content (Gro) in garnet is high and may reach 50. 1 mol%. The SiO2 content of phengite ranges from 54.37% to 54.84% with 3.54-3.57 p.f.u. Quartz pseudomorphs after coesite occur as inclusions in garnet.The gneisses of the Donghai area have been subjected to multistage recrystallization and exhibit a closewise P-T evolutional path characterized by the near-isothermal decompression. The inclusion assemblage (Hb+Ep+Bi+Pl+Qz) within garnet and other minerals has recorded a pre-peak stage (Mi) epidote amphibole fades metamorphic event. High- and ultrahigh-pressure peak metamorphism (M2) took place at T=750-860℃ and P>2.7 GPa. The symplectitic assemblages after garnet, jadeitic-clinopyroxene and rutile imply a near-isothermal decompression metamorphism (M3, M4) during the rapid exhumation. Several lines of evidence of petrography and metamorphic reactions indicate that both gneisses and eclogites have experienced ultrahigh-pressure metamorphism in the Donghai area. This research may be of great significance for an in-depth study of the metamorphism and tectonic evolution in the Su-Lu ultrahigh-pressure metamorphic belt.

Comparison of Diurnal,Seasonal and Solar Cycle Variations of High-latitude,Mid-latitude and Low-latitude Ionosphere

Comparison of regular(diurnal,seasonal and solar cycle)variations of high-latitude,mid-latitude and low-latitude ionospheric characteristics has been provided on basis of local empirical models of the peak electron density and the peak height.The local empirical models were derived from the hand-scaled ionogram data recorded by DPS-4 digisondes located at Norilsk(69°N,88°E),Irkutsk(52°N,104°E)and Hainan(19°N,109°E)for a 6-year period from December,2002 to December,2008.The technique used to build the local empirical model is described.The primary focus is diurnal-seasonal behavior under low solar activity and its change with increasing solar activity.Both common and specific features of the high-latitude(Norilsk),mid-latitude(Irkutsk)and low-latitude(Hainan)regular variations were revealed using their local empirical models.

The effectiveness of a high-fidelity teaching simulation based on an NLN/Jeffries simulation in the nursing education theoretical framework and its influencing factors

Objective： To investigate the effectiveness of a high-fidelity teaching simulation based on an NLN/Jeffries simulation in the nursing education theoretical framework and its influencing factors. Methods： A high-fidelity teaching simulation on clinical nursing practices using intelligent human analogues was conducted with 200 students, and The Simulation Design Scale, and the Student Satisfaction and Self-Confidence in Learning Scale developed by the National League for Nursing were used to evaluate the training effectiveness and its influencing factors. Results： For the high-fidelity teaching simulation, students gave scores of 4.36± 0.54 points for satisfaction and 4.33 ± 0.46 points for Self-Confidence. The students highly rated the five dimensions of teaching design, i.e., teaching objectives/information, assistance/support for students, problem solving, guided feedback, and fidelity. The teaching design was closely correlated with the satisfaction of the high-fidelity teaching simulation and self-efficacy, and the dimensions of teaching objectives/informa- tion and assistance/support for students were particularly strong predictors of teaching effectiveness. Conclusions： A high-fidelity teaching simulation based on Jeffries＇ theoretical framework improved student satisfaction with the simulation and their Self-Confidence. In planning simulations, teachers should take into account five characteristics, i.e., teaching objectives/information on simulation education, assistance/support for students, problem solving, guided reflection, and fidelity, to achieve better teaching effectiveness.

Quantum percolation tunneling current 1/f^γ noise model for high-κ gate stacks Bi-layer breakdown

Based on the elastic trap-assisted tunneling mechanism in high-κgate stacks,a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation model.We conclude that the noise amplitude of the PSD(Power Spectral Density)for three stages,namely the fresh device,one-layer BD(breakdown),and two-layer BD,increases from 10-22→10-14→10-8 A2/Hz.Meanwhile,the noise exponent γ for the three stages,has the 1/f2type(γ→2),1/fγ type(γ→1~2),and 1/f type(γ→1),respectively.The simulation results are in good agreement with the experimental results.This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/fγ noise amplitude dependence and 1/fγ noise exponent dependence.These results provide a theoretical basis for the high-κ gate stacks bi-layer breakdown noise characterization methods.

Differential Effects of Voluntary Ethanol Consumption on Dopamine Output in the Nucleus Accumbens Shell of Roman High- and Low-Avoidance Rats: A Behavioral and Brain Microdialysis Study

The Roman high(RHA) and low-Avoidance (RLA) rats were selectively bred for rapid vs poor acquisition of two-way active avoidance behavior. These lines differ in numerous behavioral traits, with RLA rats being more fearful/anxious than RHA rats, and the latter being novelty-seekers and showing larger intake of, and preference for, addictive substances including ethanol (ETH). Moreover, several differences in central dopaminergic, serotonergic, and GABAergic functions have been reported in these two lines. Since those neural systems are involved in the regulation of ETH consumption, it was considered of interest to investigate: 1) the differences in ETH intake and preference between RHA and RLA rats, 2) the effects of ETH on DA release in the shell of the nucleus accumbens (AcbSh) using brain microdialysis. ETH solutions of increasing concentrations (2% - 10%) were presented on alternate days in a free choice with water. To examine ETH intake and preference stability, animals were subsequently switched to daily presentations of 10% ETH for 10 consecutive days. RHA rats consumed significantly larger amounts of ETH and displayed higher ETH preference than did RLA rats throughout the acquisition and maintenance phases. Following chronic exposure to ETH the animals were habituated to a restricted access to ETH schedule (2% ETH, 2 h per day × 4 days) before surgical implantation of a dialysis probe in the AcbSh. Under these experimental conditions, voluntary ETH intake (2%, 1 h, p.o.) produced a significant increase in accumbal DA output in RHA rats but not in their RLA counterparts. Finally, the i.p. administration of ETH (0.25 g/kg) to na?ve Roman rats produced a significant increment in accumbal DA output only in RHA rats. These results indicate that the mesolimbic dopaminergic system of RHA rats is more responsive to the effects of ETH than that of RLA rats.

Study on Mechanical Properties of High Fine Silty Basalt Fiber Shotcrete Based on Orthogonal Design

In order to improve the comprehensive utilization rate of highfines sand(HFS)produced by the mine,full solid waste shotcrete(HFS-BFRS)was prepared with HFS asfine aggregate in cooperation with basaltfiber(BF).The strength growth characteristics of HFS-BFRS were analyzed.And thefitting equation of compressive strength growth characteristics of HFS-BFRS under the synergistic effect of multiple factors was given.And based on the orthogonal experimental method,the effects on the compressive strength,splitting tensile strength andflex-ural strength of HFS-BFRS under the action of different levels of influencing factors were investigated.The effect of three factors on the mechanical properties of HFS-BFRS,3,and 28 d,respectively,was revealed by choosing the colloidal sand ratio(C/H),basaltfiber volume fraction(BF Vol)and naphthalene high-efficiency water reducing agent(FDN)as the design variables,combined with indoor tests and theoretical analysis.The results show that the sensitivity of the three factors on compressive strength andflexural strength is C/H>FDN>BF Vol,and split-ting tensile strength is BF Vol>FDN>C/H.Finally,thefitting ratio of HFS-BFRS was optimized by the factor index method,and the rationality was verified by thefield test.For thefluidity of HFS-BFRS,the slump can be improved by 139%under the action of 1.2%FDN,which guarantees the pump-ability of HFS-BFRS.

淬火-回火热处理对超高强Fe-Mn-Al-C合金钢组织与力学性能影响研究

对一种成分为Fe-8Mn-8Al-0.8C的Fe-Mn-Al-C系超高强合金钢的热轧钢板进行“淬火+回火”热处理试验,研究其力学性能和微观组织。结果表明,试验用钢在热轧后由铁素体、奥氏体以及κ-碳化物三种物相组成,且组织呈现明显的带状,经热处理后κ-碳化物消除,热轧板在900℃保温1 h后水淬200℃回火60 min后呈现最优整体力学性能,抗拉强度达到1410 MPa,延伸率为29%,强塑积达到41 GPa·%。

HfO_2高k栅介质等效氧化层厚度的提取

分两步提取了HfO2高k栅介质等效氧化层厚度(EOT).首先,根据MIS测试结构等效电路,采用双频C-V特性测试技术对漏电流和衬底电阻的影响进行修正,得出HfO2高k栅介质的准确C-V特性.其次,给出了一种利用平带电容提取高k介质EOT的方法,该方法能克服量子效应所产生的反型层或积累层电容的影响.采用该两步法提取的HfO2高k栅介质EOT与包含量子修正的Poisson方程数值模拟结果对比,误差小于5%,验证了该方法的正确性.

高介电栅介质ZrO_2薄膜的物理电学性能

采用脉冲激光沉积方法在Si衬底上沉积了ZrO2栅介质薄膜,X射线衍射分析表明该薄膜经过450℃退火后低介电界面层得到抑制,仍然保持非晶状态;电学测试显示10 nm厚ZrO2薄膜的等效厚度为3.15 nm,介电常数12.38,满足新型高介电栅介质的要求,在-1 V偏压下Al/ZrO2/Si/Al电容器的漏电流密度为1.1×10-4A/cm2.

高静压与к-卡拉胶对低脂猪肉凝胶保水和质构的影响

高静压处理与添加水溶性多糖是改善肉制品质构、保水性等品质的重要手段。本研究侧重调查100～300MPa压力、0～1.0%к-卡拉胶添加水平对猪肉糜凝胶保水、质构的影响。试验结果表明,添加0.5%的к-卡拉胶可显著降低猪肉凝胶的蒸煮损失,提高总持水性及凝胶硬度（P〈0.05）;200MPa以上的高静压不仅可以显著降低肉糜的蒸煮损失,而且也能够显著提高凝胶的硬度、黏结性与咀嚼性（P〈0.05）;但100～300MPa的高静压对1.0%卡拉胶水平的凝胶弹性影响不明显（P〉0.05）。此外,对于肉制品保水性的评价,应注意选择合适的评价方法,尤其是蒸煮损失差异较大的肉制品样本,评价方法选择的合理性将直接影响评价的结果。

Er_2O_3/Si外延薄膜表面和界面组分研究

利用X射线光电子能谱方法对Si基Er2O3外延薄膜的化学组分进行了分析。在X射线照射样品和氩离子轰击使样品减薄的过程中没有诱发其他的化学反应。研究了清洁的Si和有氧化层的Si衬底上外延生长的Er2O3薄膜的表面和界面化学组分情况,并对上述两种不同的衬底上外延生长Er2O3薄膜的生长模式进行初步探讨。

基于Omega-K算法的快速全聚焦超声成像研究

针对现有超声全聚焦技术难以实时成像的问题,提出基于w-k算法的快速全聚焦技术。首先将用于全聚焦方法（TFM）成像的三维全矩阵数据分解为N个二维子矩阵;利用快速傅里叶变换,将1～N号子矩阵由时域I（t,x）转换为频域D（kZ,kx）;基于w-k算法构建波数迁移因子F（kZ,kx）,对D（kZ,kx）进行加权得到ID（kx,kz）,实现频域中的声束聚焦;通过快速傅里叶逆变换得到子矩阵聚焦图像,并将其进行图像融合,最终获得全聚焦图像。结果表明,单核测试条件下,快速全聚焦方法获得具有200×300像素点的64阵元图像所需平均时间仅为0.65 s,而常规全聚焦算法需要1 467.36 s。综上,基于ω-k算法的全聚焦技术具有成像速度快、对硬件要求低等优点,为实时的高精度在线无损检测提供了一种可行方法。

Er_2O_3薄膜的电学性质研究

Er2O3是一种很有希望的高κ材料。在氧气氛下热蒸发金属铒源,制备了Er2O3的薄膜,随后在氧气氛下对它进行了退火。通过对其C-V及I-V特性的测试,认为该材料的电学特性优秀,应该进行进一步的研究。

TaON界面层Hf基高κ栅介质Ge MOS电容特性研究

制备了含TaON界面层的Hf基氧化物和氮氧化物叠层高κ栅介质GeMOS电容。器件的测量结果表明,HfTaON/TaON叠层栅介质GeMOS电容表现出良好的界面特性、低的栅极漏电流密度、小的等效氧化物厚度(0.94nm)、高的介电常数(～24)和良好的可靠性。这些都归因于TaON界面层阻挡了O及金属原子向Ge衬底的扩散,抑制了不稳定的低κGeOx的生长,从而改善界面质量,增强器件性能。

CL-20基含铝炸药爆轰波阵面法向速度与曲率的关系

采用高速扫描相机及电探针测速法测量了具有相同铝含量的CL-20基和RDX基含铝炸药的拟定态爆轰波形及爆速,分析了炸药波阵面法向速度Dn与曲率κ之间的函数关系。结果表明,CL-20基含铝炸药的爆轰波阵面较RDX基含铝炸药的平坦,其法向爆速受曲率效应的影响也较RDX基含铝炸药的小。当κ>0.005mm-1时,其法向爆速的下降速率明显小于RDX基含铝炸药;当κ<0.005mm-1时,其法向爆速的下降速率略高于RDX基含铝炸药。

Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors:Modeling,Optimization Using Particle Swarm Intelligence,and Fabrication

A mathematical model and experimental analysis of the impact of oxide thickness on the ambipolar conduction in Schottky Barrier Carbon Nanotubes(CNTs)Field Effect Transistor(SB CNTFETs)is presented.Suppression of ambipolar conduction in SB CNTFETs is imperative in order to establish them as the future of IC technology.The ambipolar nature of SB CNTFETs leads to a great amount of leakage current.Employing a gate oxide dielectric of thickness,tox^50 nm suppresses the ambipolar behavior.In an SB CNTFET,it is the electric field at the source/drain contacts that control the conductance and the band bending length at the contacts is defined by tox.Therefore,tox is the prime parameter that influences the width of the Schottky barrier and the current in the subthreshold region.Due to the wide SB,there is a loss in on-current due to tunneling,but the current due to thermionic emission is increased by employing a high-κdielectric such as Zirconium dioxide(ZrO2).This work proposes an approach to suppress ambipolar behavior in SB CNTFETs without decreasing the on current.The thickness and dielectric constant of the gate oxide are optimized using the particle swarm optimization(PSO)algorithm to achieve suppression of ambipolar conduction without any loss in on-current.The proposed SB CNTFET was modeled using Verilog-A.Experimental demonstration of the suppression of ambipolar property is also presented.Two SB CNTFETs are fabricated using high-κdielectric such as ZrO2 with different thickness.A device with thin(~5 nm)gate oxide and another device with thick(~50 nm)gate oxide were fabricated.From the experimental results,it is observed that the device with the thin gate oxide exhibited ambipolar characteristics and the device with the thick gate oxide did not exhibit ambipolar characteristics.The increase in thickness,tox,ensures suppression of ambipolar behavior.

κ-卡拉胶寡糖的高效毛细管电泳分析方法研究

采用高效毛细管电泳法(HPCE)对κ-卡拉胶寡糖的8-氨基萘基-1,3,6-三磺酸(ANTS)衍生物进行了分离分析,考察了缓冲液浓度、pH、电压等参数对寡糖衍生物分离的影响。实验结果表明,在含有15 mmol/L三乙胺的25 mmol/L柠檬酸钠缓冲液中,当pH=2.8,运行电压为25 KV,电泳由正极到负极,温度28℃,检测波长235 nm时,κ-卡拉胶寡糖获得了高效分离。并将该方法应用于κ-卡拉胶酸水解过程中产生的寡糖的分析。