Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing ga...Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing gate oxide defects(ΔV_(HT)),and the generation of gate oxide defects(ΔV_(OT)).In this work,the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate(HKMG)process is thoroughly studied.The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature.The effects of the three underlying subcomponents are evaluated by using the comprehensive models.It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress.Moreover,the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted.The dependence of operating lifetime on stress bias and temperature is also discussed.It is observed that NBTI lifetime significantly decreases as the stress increases.Furthermore,the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.展开更多
For all-optical communication and information processing,it is necessary to develop all-optical logic gates based on photonic structures that can directly perform logic operations.All-optical logic gates have been dem...For all-optical communication and information processing,it is necessary to develop all-optical logic gates based on photonic structures that can directly perform logic operations.All-optical logic gates have been demonstrated based on conventional waveguides and interferometry,as well as photonic crystal structures.Nonetheless,any defects in those structures will introduce high scattering loss,which compromises the fidelity and contrast ratio of the information process.Based on the spin-valley locking effect that can achieve defect-immune unidirectional transmission of topological edge states in valley photonic crystals(VPCs),we propose a high-performance all-optical logic OR gate based on a VPC structure.By tuning the working bandwidth of the two input channels,we prevent interference between the two channels to achieve a stable and high-fidelity output.The transmittance of both channels is higher than 0.8,and a high contrast ratio of 28.8 dB is achieved.Moreover,the chirality of the logic gate originated from the spin-valley locking effect allows using different circularly polarized light as inputs,representing“1”or“0”,which is highly desired in quantum computing.The device’s footprint is 18μm×12μm,allowing high-density on-chip integration.In addition,this design can be experimentally fabricated using current nanofabrication techniques and will have potential applications in optical communication,information processing,and quantum computing.展开更多
Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information ...Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information regarding tumor distribution in living animals.The construction of optical transmission models and the application of reconstruction algorithms in traditional model-based reconstruction processes have affected the reconstruction results,resulting in problems such as low accuracy,poor robustness,and long-time consumption.Here,a gates joint locally connected network(GLCN)method is proposed by establishing the mapping relationship between the inside source distribution and the photon density on surface directly,thus avoiding the extra time consumption caused by iteration and the reconstruction errors caused by model inaccuracy.Moreover,gates module was composed of the concatenation and multiplication operators of three different gates.It was embedded into the network aiming at remembering input surface photon density over a period and allowing the network to capture neurons connected to the true source selectively by controlling three different gates.To evaluate the performance of the proposed method,numerical simulations were conducted,whose results demonstrated good performance in terms of reconstruction positioning accuracy and robustness.展开更多
Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chi...Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chip is a highly desirable but challenging goal.Here we propose a hybrid architecture that utilizes a high-impedance SQUID array resonator as a quantum bus,thereby coherently coupling different solid-state qubits.We employ a resonant exchange spin qubit hosted in a triple quantum dot and a superconducting transmon qubit.Since this hybrid system is highly tunable,it can operate in a dispersive regime,where the interaction between the different qubits is mediated by virtual photons.By utilizing such interactions,entangling gate operations between different qubits can be realized in a short time of 30 ns with a fidelity of up to 96.5%under realistic parameter conditions.Further utilizing this interaction,remote entangled state between different qubits can be prepared and is robust to perturbations of various parameters.These results pave the way for exploring efficient fault-tolerant quantum computation on hybrid quantum architecture platforms.展开更多
Social media has become increasingly significant in modern society,but it has also turned into a breeding ground for the propagation of misleading information,potentially causing a detrimental impact on public opinion...Social media has become increasingly significant in modern society,but it has also turned into a breeding ground for the propagation of misleading information,potentially causing a detrimental impact on public opinion and daily life.Compared to pure text content,multmodal content significantly increases the visibility and share ability of posts.This has made the search for efficient modality representations and cross-modal information interaction methods a key focus in the field of multimodal fake news detection.To effectively address the critical challenge of accurately detecting fake news on social media,this paper proposes a fake news detection model based on crossmodal message aggregation and a gated fusion network(MAGF).MAGF first uses BERT to extract cumulative textual feature representations and word-level features,applies Faster Region-based ConvolutionalNeuralNetwork(Faster R-CNN)to obtain image objects,and leverages ResNet-50 and Visual Geometry Group-19(VGG-19)to obtain image region features and global features.The image region features and word-level text features are then projected into a low-dimensional space to calculate a text-image affinity matrix for cross-modal message aggregation.The gated fusion network combines text and image region features to obtain adaptively aggregated features.The interaction matrix is derived through an attention mechanism and further integrated with global image features using a co-attention mechanism to producemultimodal representations.Finally,these fused features are fed into a classifier for news categorization.Experiments were conducted on two public datasets,Twitter and Weibo.Results show that the proposed model achieves accuracy rates of 91.8%and 88.7%on the two datasets,respectively,significantly outperforming traditional unimodal and existing multimodal models.展开更多
Aerial threat assessment is a crucial link in modern air combat, whose result counts a great deal for commanders to make decisions. With the consideration that the existing threat assessment methods have difficulties ...Aerial threat assessment is a crucial link in modern air combat, whose result counts a great deal for commanders to make decisions. With the consideration that the existing threat assessment methods have difficulties in dealing with high dimensional time series target data, a threat assessment method based on self-attention mechanism and gated recurrent unit(SAGRU) is proposed. Firstly, a threat feature system including air combat situations and capability features is established. Moreover, a data augmentation process based on fractional Fourier transform(FRFT) is applied to extract more valuable information from time series situation features. Furthermore, aiming to capture key characteristics of battlefield evolution, a bidirectional GRU and SA mechanisms are designed for enhanced features.Subsequently, after the concatenation of the processed air combat situation and capability features, the target threat level will be predicted by fully connected neural layers and the softmax classifier. Finally, in order to validate this model, an air combat dataset generated by a combat simulation system is introduced for model training and testing. The comparison experiments show the proposed model has structural rationality and can perform threat assessment faster and more accurately than the other existing models based on deep learning.展开更多
Static Poisson’s ratio(vs)is crucial for determining geomechanical properties in petroleum applications,namely sand production.Some models have been used to predict vs;however,the published models were limited to spe...Static Poisson’s ratio(vs)is crucial for determining geomechanical properties in petroleum applications,namely sand production.Some models have been used to predict vs;however,the published models were limited to specific data ranges with an average absolute percentage relative error(AAPRE)of more than 10%.The published gated recurrent unit(GRU)models do not consider trend analysis to show physical behaviors.In this study,we aim to develop a GRU model using trend analysis and three inputs for predicting n s based on a broad range of data,n s(value of 0.1627-0.4492),bulk formation density(RHOB)(0.315-2.994 g/mL),compressional time(DTc)(44.43-186.9 μs/ft),and shear time(DTs)(72.9-341.2μ s/ft).The GRU model was evaluated using different approaches,including statistical error an-alyses.The GRU model showed the proper trends,and the model data ranges were wider than previous ones.The GRU model has the largest correlation coefficient(R)of 0.967 and the lowest AAPRE,average percent relative error(APRE),root mean square error(RMSE),and standard deviation(SD)of 3.228%,1.054%,4.389,and 0.013,respectively,compared to other models.The GRU model has a high accuracy for the different datasets:training,validation,testing,and the whole datasets with R and AAPRE values were 0.981 and 2.601%,0.966 and 3.274%,0.967 and 3.228%,and 0.977 and 2.861%,respectively.The group error analyses of all inputs show that the GRU model has less than 5% AAPRE for all input ranges,which is superior to other models that have different AAPRE values of more than 10% at various ranges of inputs.展开更多
This study proposed a new real-time manufacturing process monitoring method to monitor and detect process shifts in manufacturing operations.Since real-time production process monitoring is critical in today’s smart ...This study proposed a new real-time manufacturing process monitoring method to monitor and detect process shifts in manufacturing operations.Since real-time production process monitoring is critical in today’s smart manufacturing.The more robust the monitoring model,the more reliable a process is to be under control.In the past,many researchers have developed real-time monitoring methods to detect process shifts early.However,thesemethods have limitations in detecting process shifts as quickly as possible and handling various data volumes and varieties.In this paper,a robust monitoring model combining Gated Recurrent Unit(GRU)and Random Forest(RF)with Real-Time Contrast(RTC)called GRU-RF-RTC was proposed to detect process shifts rapidly.The effectiveness of the proposed GRU-RF-RTC model is first evaluated using multivariate normal and nonnormal distribution datasets.Then,to prove the applicability of the proposed model in a realmanufacturing setting,the model was evaluated using real-world normal and non-normal problems.The results demonstrate that the proposed GRU-RF-RTC outperforms other methods in detecting process shifts quickly with the lowest average out-of-control run length(ARL1)in all synthesis and real-world problems under normal and non-normal cases.The experiment results on real-world problems highlight the significance of the proposed GRU-RF-RTC model in modern manufacturing process monitoring applications.The result reveals that the proposed method improves the shift detection capability by 42.14%in normal and 43.64%in gamma distribution problems.展开更多
This article briefly introduces the weighing device for steel billets in front of the heating furnace of the high-speed wire rod unit,and analyzes and summarizes the problems existing in the original weighing device f...This article briefly introduces the weighing device for steel billets in front of the heating furnace of the high-speed wire rod unit,and analyzes and summarizes the problems existing in the original weighing device for steel billets in production and use.Based on on-site installation conditions,design a new weighing method,match a large range weighing sensor,upgrade the automation control of the weighing device,and remotely transmit the billet weighing data to the MES system of the group.The automatic,stable,reliable,and accurate measurement of steel billet raw materials has been achieved,providing important guarantees for the accurate measurement of production line billet and product yield.展开更多
This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxynitride (HfSiON) on ultrathin SiO2 buffer layer. The gate dielectric with 10A (1A = 0.1 nm) equivalent o...This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxynitride (HfSiON) on ultrathin SiO2 buffer layer. The gate dielectric with 10A (1A = 0.1 nm) equivalent oxide thickness is obtained. The experimental results indicate that the prepared HfSiON gate dielectric exhibits good physical and electrical characteristics, including very good thermal stability up to 1000℃, excellent interface properties, high dielectric constant (k = 14) and low gate-leakage current (Ig = 1.9 × 10^-3 A/cm^2@Vg = Vfb - 1 V for EOT of 10 A). TaN metal gate electrode is integrated with the HfSiON gate dielectric.The effective work function of TaN on HfSiON is 4.3 eV, meeting the requirements of NMOS for the metal gate. And, the impacts of sputtering ambient and annealing temperature on the electrical properties of HfSiON gate dielectric are investigated.展开更多
Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si(001) substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the ...Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si(001) substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570 ℃ were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density (JL) of 10-5 A/cm^2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6-13 nm. Through the comparison between films grown at 450 and 570 ℃, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.展开更多
The decreasing feature sizes in complementary metal-oxide semiconductor (CMOS) transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant (high-k) because...The decreasing feature sizes in complementary metal-oxide semiconductor (CMOS) transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant (high-k) because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy (HRTEM) and the related techniques based on scanning transmission electron microscopy (STEM), including high-angle annular dark- field (HAADF) imaging (also known as Z-contrast imaging), electron energy-loss spectroscopy (EELS), and energy dispersive X-ray spectroscopy (EDS), due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.展开更多
With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant (high-k) gate materials, as alternatives to SiO2, have been extensively investig...With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant (high-k) gate materials, as alternatives to SiO2, have been extensively investigated. Hf (Zr)-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf (Zr)-based high-k gate dielectrics based on PVD (physical vapor deposition) process. This article begins with a survey of various methods developed for generating Hf (Zr)-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf (Zr)-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf (Zr)-based high-k gate dielectrics.展开更多
A novel trench MOS barrier Schottky diode(TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS c...A novel trench MOS barrier Schottky diode(TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.展开更多
Indacenodithiophene-co-benzothiadiazole(IDTBT) has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone....Indacenodithiophene-co-benzothiadiazole(IDTBT) has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 10^21cm^-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm^2·V^-1·s^-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.展开更多
High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor(MOS) capacitors with La ON as interfacial passivation layer(IPL) and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial an...High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor(MOS) capacitors with La ON as interfacial passivation layer(IPL) and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither La ON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated Ga As MOS device with a stacked gate dielectric of Hf Ti ON/La ON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, La ON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/Ga As interface.展开更多
文摘Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing gate oxide defects(ΔV_(HT)),and the generation of gate oxide defects(ΔV_(OT)).In this work,the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate(HKMG)process is thoroughly studied.The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature.The effects of the three underlying subcomponents are evaluated by using the comprehensive models.It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress.Moreover,the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted.The dependence of operating lifetime on stress bias and temperature is also discussed.It is observed that NBTI lifetime significantly decreases as the stress increases.Furthermore,the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.
基金Project supported by the National Key Research and Development Program of the Ministry of Science and Technology of China(Grant No.2022YFA1404201)the National Natural Science Foundation of China(Grant No.11904255)the Key Research and Development Program of Shanxi Province(International Cooperation)(Grant No.201903D421052).
文摘For all-optical communication and information processing,it is necessary to develop all-optical logic gates based on photonic structures that can directly perform logic operations.All-optical logic gates have been demonstrated based on conventional waveguides and interferometry,as well as photonic crystal structures.Nonetheless,any defects in those structures will introduce high scattering loss,which compromises the fidelity and contrast ratio of the information process.Based on the spin-valley locking effect that can achieve defect-immune unidirectional transmission of topological edge states in valley photonic crystals(VPCs),we propose a high-performance all-optical logic OR gate based on a VPC structure.By tuning the working bandwidth of the two input channels,we prevent interference between the two channels to achieve a stable and high-fidelity output.The transmittance of both channels is higher than 0.8,and a high contrast ratio of 28.8 dB is achieved.Moreover,the chirality of the logic gate originated from the spin-valley locking effect allows using different circularly polarized light as inputs,representing“1”or“0”,which is highly desired in quantum computing.The device’s footprint is 18μm×12μm,allowing high-density on-chip integration.In addition,this design can be experimentally fabricated using current nanofabrication techniques and will have potential applications in optical communication,information processing,and quantum computing.
基金supported by the National Natural Science Foundation of China(No.62101439)the Key Research and Development Program of Shaanxi(No.2023-YBSF-289).
文摘Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information regarding tumor distribution in living animals.The construction of optical transmission models and the application of reconstruction algorithms in traditional model-based reconstruction processes have affected the reconstruction results,resulting in problems such as low accuracy,poor robustness,and long-time consumption.Here,a gates joint locally connected network(GLCN)method is proposed by establishing the mapping relationship between the inside source distribution and the photon density on surface directly,thus avoiding the extra time consumption caused by iteration and the reconstruction errors caused by model inaccuracy.Moreover,gates module was composed of the concatenation and multiplication operators of three different gates.It was embedded into the network aiming at remembering input surface photon density over a period and allowing the network to capture neurons connected to the true source selectively by controlling three different gates.To evaluate the performance of the proposed method,numerical simulations were conducted,whose results demonstrated good performance in terms of reconstruction positioning accuracy and robustness.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11974336 and 12304401)the National Key R&D Program of China(Grant No.2017YFA0304100)+1 种基金the Key Project of Natural Science Research in Universities of Anhui Province(Grant No.KJ2021A1107)the Scientific Research Foundation of Suzhou University(Grant Nos.2020BS006 and 2021XJPT18).
文摘Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chip is a highly desirable but challenging goal.Here we propose a hybrid architecture that utilizes a high-impedance SQUID array resonator as a quantum bus,thereby coherently coupling different solid-state qubits.We employ a resonant exchange spin qubit hosted in a triple quantum dot and a superconducting transmon qubit.Since this hybrid system is highly tunable,it can operate in a dispersive regime,where the interaction between the different qubits is mediated by virtual photons.By utilizing such interactions,entangling gate operations between different qubits can be realized in a short time of 30 ns with a fidelity of up to 96.5%under realistic parameter conditions.Further utilizing this interaction,remote entangled state between different qubits can be prepared and is robust to perturbations of various parameters.These results pave the way for exploring efficient fault-tolerant quantum computation on hybrid quantum architecture platforms.
基金supported by the National Natural Science Foundation of China(No.62302540)with author Fangfang Shan.For more information,please visit their website at https://www.nsfc.gov.cn/(accessed on 31/05/2024)+3 种基金Additionally,it is also funded by the Open Foundation of Henan Key Laboratory of Cyberspace Situation Awareness(No.HNTS2022020)where Fangfang Shan is an author.Further details can be found at http://xt.hnkjt.gov.cn/data/pingtai/(accessed on 31/05/2024)supported by the Natural Science Foundation ofHenan Province Youth Science Fund Project(No.232300420422)for more information,you can visit https://kjt.henan.gov.cn/2022/09-02/2599082.html(accessed on 31/05/2024).
文摘Social media has become increasingly significant in modern society,but it has also turned into a breeding ground for the propagation of misleading information,potentially causing a detrimental impact on public opinion and daily life.Compared to pure text content,multmodal content significantly increases the visibility and share ability of posts.This has made the search for efficient modality representations and cross-modal information interaction methods a key focus in the field of multimodal fake news detection.To effectively address the critical challenge of accurately detecting fake news on social media,this paper proposes a fake news detection model based on crossmodal message aggregation and a gated fusion network(MAGF).MAGF first uses BERT to extract cumulative textual feature representations and word-level features,applies Faster Region-based ConvolutionalNeuralNetwork(Faster R-CNN)to obtain image objects,and leverages ResNet-50 and Visual Geometry Group-19(VGG-19)to obtain image region features and global features.The image region features and word-level text features are then projected into a low-dimensional space to calculate a text-image affinity matrix for cross-modal message aggregation.The gated fusion network combines text and image region features to obtain adaptively aggregated features.The interaction matrix is derived through an attention mechanism and further integrated with global image features using a co-attention mechanism to producemultimodal representations.Finally,these fused features are fed into a classifier for news categorization.Experiments were conducted on two public datasets,Twitter and Weibo.Results show that the proposed model achieves accuracy rates of 91.8%and 88.7%on the two datasets,respectively,significantly outperforming traditional unimodal and existing multimodal models.
基金supported by the National Natural Science Foundation of China (6202201562088101)+1 种基金Shanghai Municipal Science and Technology Major Project (2021SHZDZX0100)Shanghai Municip al Commission of Science and Technology Project (19511132101)。
文摘Aerial threat assessment is a crucial link in modern air combat, whose result counts a great deal for commanders to make decisions. With the consideration that the existing threat assessment methods have difficulties in dealing with high dimensional time series target data, a threat assessment method based on self-attention mechanism and gated recurrent unit(SAGRU) is proposed. Firstly, a threat feature system including air combat situations and capability features is established. Moreover, a data augmentation process based on fractional Fourier transform(FRFT) is applied to extract more valuable information from time series situation features. Furthermore, aiming to capture key characteristics of battlefield evolution, a bidirectional GRU and SA mechanisms are designed for enhanced features.Subsequently, after the concatenation of the processed air combat situation and capability features, the target threat level will be predicted by fully connected neural layers and the softmax classifier. Finally, in order to validate this model, an air combat dataset generated by a combat simulation system is introduced for model training and testing. The comparison experiments show the proposed model has structural rationality and can perform threat assessment faster and more accurately than the other existing models based on deep learning.
基金The authors thank the Yayasan Universiti Teknologi PETRONAS(YUTP FRG Grant No.015LC0-428)at Universiti Teknologi PETRO-NAS for supporting this study.
文摘Static Poisson’s ratio(vs)is crucial for determining geomechanical properties in petroleum applications,namely sand production.Some models have been used to predict vs;however,the published models were limited to specific data ranges with an average absolute percentage relative error(AAPRE)of more than 10%.The published gated recurrent unit(GRU)models do not consider trend analysis to show physical behaviors.In this study,we aim to develop a GRU model using trend analysis and three inputs for predicting n s based on a broad range of data,n s(value of 0.1627-0.4492),bulk formation density(RHOB)(0.315-2.994 g/mL),compressional time(DTc)(44.43-186.9 μs/ft),and shear time(DTs)(72.9-341.2μ s/ft).The GRU model was evaluated using different approaches,including statistical error an-alyses.The GRU model showed the proper trends,and the model data ranges were wider than previous ones.The GRU model has the largest correlation coefficient(R)of 0.967 and the lowest AAPRE,average percent relative error(APRE),root mean square error(RMSE),and standard deviation(SD)of 3.228%,1.054%,4.389,and 0.013,respectively,compared to other models.The GRU model has a high accuracy for the different datasets:training,validation,testing,and the whole datasets with R and AAPRE values were 0.981 and 2.601%,0.966 and 3.274%,0.967 and 3.228%,and 0.977 and 2.861%,respectively.The group error analyses of all inputs show that the GRU model has less than 5% AAPRE for all input ranges,which is superior to other models that have different AAPRE values of more than 10% at various ranges of inputs.
基金support from the National Science and Technology Council of Taiwan(Contract Nos.111-2221 E-011081 and 111-2622-E-011019)the support from Intelligent Manufacturing Innovation Center(IMIC),National Taiwan University of Science and Technology(NTUST),Taipei,Taiwan,which is a Featured Areas Research Center in Higher Education Sprout Project of Ministry of Education(MOE),Taiwan(since 2023)was appreciatedWe also thank Wang Jhan Yang Charitable Trust Fund(Contract No.WJY 2020-HR-01)for its financial support.
文摘This study proposed a new real-time manufacturing process monitoring method to monitor and detect process shifts in manufacturing operations.Since real-time production process monitoring is critical in today’s smart manufacturing.The more robust the monitoring model,the more reliable a process is to be under control.In the past,many researchers have developed real-time monitoring methods to detect process shifts early.However,thesemethods have limitations in detecting process shifts as quickly as possible and handling various data volumes and varieties.In this paper,a robust monitoring model combining Gated Recurrent Unit(GRU)and Random Forest(RF)with Real-Time Contrast(RTC)called GRU-RF-RTC was proposed to detect process shifts rapidly.The effectiveness of the proposed GRU-RF-RTC model is first evaluated using multivariate normal and nonnormal distribution datasets.Then,to prove the applicability of the proposed model in a realmanufacturing setting,the model was evaluated using real-world normal and non-normal problems.The results demonstrate that the proposed GRU-RF-RTC outperforms other methods in detecting process shifts quickly with the lowest average out-of-control run length(ARL1)in all synthesis and real-world problems under normal and non-normal cases.The experiment results on real-world problems highlight the significance of the proposed GRU-RF-RTC model in modern manufacturing process monitoring applications.The result reveals that the proposed method improves the shift detection capability by 42.14%in normal and 43.64%in gamma distribution problems.
文摘This article briefly introduces the weighing device for steel billets in front of the heating furnace of the high-speed wire rod unit,and analyzes and summarizes the problems existing in the original weighing device for steel billets in production and use.Based on on-site installation conditions,design a new weighing method,match a large range weighing sensor,upgrade the automation control of the weighing device,and remotely transmit the billet weighing data to the MES system of the group.The automatic,stable,reliable,and accurate measurement of steel billet raw materials has been achieved,providing important guarantees for the accurate measurement of production line billet and product yield.
基金supported by the State Key Development Program for Basic Research of China (Grant No 2006CB302704)the National Natural Science Foundation of China (Grant No 60776030)
文摘This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxynitride (HfSiON) on ultrathin SiO2 buffer layer. The gate dielectric with 10A (1A = 0.1 nm) equivalent oxide thickness is obtained. The experimental results indicate that the prepared HfSiON gate dielectric exhibits good physical and electrical characteristics, including very good thermal stability up to 1000℃, excellent interface properties, high dielectric constant (k = 14) and low gate-leakage current (Ig = 1.9 × 10^-3 A/cm^2@Vg = Vfb - 1 V for EOT of 10 A). TaN metal gate electrode is integrated with the HfSiON gate dielectric.The effective work function of TaN on HfSiON is 4.3 eV, meeting the requirements of NMOS for the metal gate. And, the impacts of sputtering ambient and annealing temperature on the electrical properties of HfSiON gate dielectric are investigated.
基金General Research Institute for Nonferrous Metals Research Fund (82262)
文摘Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si(001) substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570 ℃ were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density (JL) of 10-5 A/cm^2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6-13 nm. Through the comparison between films grown at 450 and 570 ℃, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.
基金support from Natural Science Foundation of Jiangsu Province (ProjectNo. BK2007130)National Natural Science Foundation of China (Grant Nos. 10874065, 60576023 and 60636010)+3 种基金Ministry of Science and Technology of China (Grant No.2009CB929503)Ministry of Science and Technology of China (Grant Nos. 2009CB929503 and2009ZX02101-4)the project sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education MinistryNational Found for Fostering Talents of Basic Science (NFFTBS) (ProjectNo. J0630316)
文摘The decreasing feature sizes in complementary metal-oxide semiconductor (CMOS) transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant (high-k) because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy (HRTEM) and the related techniques based on scanning transmission electron microscopy (STEM), including high-angle annular dark- field (HAADF) imaging (also known as Z-contrast imaging), electron energy-loss spectroscopy (EELS), and energy dispersive X-ray spectroscopy (EDS), due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.
基金the support from the National Major Project of Fundamental Research:Nanomaterials and Nanostructures(Grant No.2005CB623603)the National Natural Science Foundation of China(Grant No.10674138)the Special Fund for President Scholarship,Chinese Academy of Sciences.
文摘With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant (high-k) gate materials, as alternatives to SiO2, have been extensively investigated. Hf (Zr)-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf (Zr)-based high-k gate dielectrics based on PVD (physical vapor deposition) process. This article begins with a survey of various methods developed for generating Hf (Zr)-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf (Zr)-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf (Zr)-based high-k gate dielectrics.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00607)the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097)the Zhejiang Provincial Natural Science Foundation of China(Grant No.LR14F040001)
文摘A novel trench MOS barrier Schottky diode(TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.
基金Project supported by the Natural Science Foundation of Shanghai,China(Grant No.13ZR1456800)Ph.D. Programs Foundation of Ministry of Education of China(Grant No.20120073110093)+1 种基金the National Natural Science Foundation of China(Grant Nos.11274229,11474198,61274083,61334008,11274229,11474198,11204175)DOE under DE-FG02-04ER46159
文摘Indacenodithiophene-co-benzothiadiazole(IDTBT) has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 10^21cm^-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm^2·V^-1·s^-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176100 and 61274112)
文摘High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor(MOS) capacitors with La ON as interfacial passivation layer(IPL) and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither La ON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated Ga As MOS device with a stacked gate dielectric of Hf Ti ON/La ON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, La ON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/Ga As interface.