Broadband high-efficiency dielectric metalenses based on quasi-continuous nanostrips

Benefiting from the abrupt phase changes within subwavelength thicknesses,metasurfaces have been widely applied for lightweight and compact optical systems.Simultaneous broadband and high-efficiency characteristics are highly attractive for the practical implementation of metasurfaces.However,current metasurface devices mostly adopt discrete micro/nano structures,which rarely realize both merits simultaneously.In this paper,dielectric metasurfaces composed of quasi-continuous nanostrips are proposed to overcome this limitation.Via quasi-continuous nanostrips metasurface,a normal focusing metalens and a superoscillatory lens overcoming the diffraction limit are designed and experimentally demonstrated.The quasi-continuous metadevices can operate in a broadband wavelength ranging from 450 nm to 1000nm and keep a high power efficiency.The average efficiency of the fabricated metalens reaches 54.24%,showing a significant improvement compared to the previously reported metalenses with the same thickness.The proposed methodology can be easily extended to design other metadevices with the advantages of broadband and high-efficiency in practical optical systems.

Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate

Here,p-type polysilicon films are fabricated by ex-situ doping method with ammonium tetraborate tetrahydrate(ATT)as the boron source,named ATT-pPoly.The effects of ATT on the properties of polysilicon films are comprehensively analyzed.The Raman spectra reveal that the ATT-pPoly film is composed of grain boundary and crystalline regions.The preferred orientation is the(111)direction.The grain size increases from 16−23 nm to 21−47 nm,by~70%on average.Comparing with other reported films,Hall measurements reveal that the ATT-pPoly film has a higher carrier concentration(>10^(20)cm^(−3))and higher carrier mobility(>30 cm2/(V·s)).The superior properties of the ATT-pPoly film are attributed to the heavy doping and improved grain size.Heavy doping property is proved by the mean sheet resistance(Rsheet,m)and distribution profile.The R_(sheet,m)decreases by more than 30%,and it can be further decreased by 90%if the annealing temperature or duration is increased.The boron concentration of ATT-pPoly film annealed at 950℃ for 45 min is~3×10^(20)cm^(−3),and the distribution is nearly the same,except near the surface.Besides,the standard deviation coefficient(σ)of Rsheet,m is less than 5.0%,which verifies the excellent uniformity of ATT-pPoly film.

High-efficiency Carbonation Modification Methods of Recycled Coarse Aggregates

To solve the problem of only surface carbonation and realize high-efficiency carbonation of recycled coarse aggregate,the method of carbonated recycled coarse aggregate with nano materials pre-soaking was first put forward.The carbonation effect of modified recycled coarse aggregate with three different carbonation methods was evaluated,and water absorption,apparent density and crush index of modified recycled coarse aggregate were measured.Combined with XRD,SEM,and MIP microscopic analysis,the high-efficiency carbonation strengthening mechanism of modified recycled coarse aggregate was revealed.The experimental results show that,compared with the non-carbonated recycled coarse aggregate,the physical and microscopic properties of carbonated recycled coarse aggregate are improved.The method of carbonation with nano-SiO_(2) pre-soaking can realize the high-efficiency carbonation of recycled coarse aggregate,for modified recycled coarse aggregate with the method,water absorption is reduced by 23.03%,porosity is reduced by 44.06%,and the average pore diameter is 21.82 nm.The high-efficiency carbonation strengthening mechanism show that the pre-socked nano-SiO_(2) is bound to the hydration product Ca(OH)_(2) of the old mortar with nano-scale C-S-H,which can improve the CO_(2) absorption rate,accelerate the carbonation reaction,generate more stable CaCO_(3) and nano-scale silica gel,and bond to the dense three-dimensional network structure to realize the bidirectional enhancement of nano-materials and pressurized carbonation.It is concluded that the method of carbonation with nano-SiO_(2) pre-soaking is a novel high-efficiency carbonation modification of recycled coarse aggregate.

Toward high-efficiency perovskite solar cells with one-dimensional oriented nanostructured electron transport materials

The unique advantages of one-dimensional(1D)oriented nanostructures in light-trapping and chargetransport make them competitive candidates in photovoltaic(PV)devices.Since the emergence of perovskite solar cells(PSCs),1D nanostructured electron transport materials(ETMs)have drawn tremendous interest.However,the power conversion efficiencies(PCEs)of these devices have always significantly lagged behind their mesoscopic and planar counterparts.High-efficiency PSCs with 1D ETMs showing efficiency over 22%were just realized in the most recent studies.It yet lacks a comprehensive review covering the development of 1D ETMs and their application in PSCs.We hence timely summarize the advances in 1D ETMs-based solar cells,emphasizing on the fundamental and optimization issues of charge separation and collection ability,and their influence on PV performance.After sketching the classification and requirements for high-efficiency 1D nanostructured solar cells,we highlight the applicability of 1D TiO_(2)nanostructures in PSCs,including nanotubes,nanorods,nanocones,and nanopyramids,and carefully analyze how the electrostatic field affects cell performance.Other kinds of oriented nanostructures,e.g.,ZnO and SnO_(2)ETMs,are also described.Finally,we discuss the challenges and propose some potential strategies to further boost device performance.This review provides a broad range of valuable work in this fast-developing field,which we hope will stimulate research enthusiasm to push PSCs to an unprecedented level.

Selection of Greenhouse Zucchini Varieties and High-Quality,High-Yield and High-Efficiency Cultivation Techniques

[Objectives]To select zucchini varieties suitable for cultivation in Zibo City and test its high-yield cultivation techniques.[Methods]Six zucchini varieties were introduced,and their commercial quality and yield were determined.[Results]The yield of Shengfeier,Xiuyu 170 and Xihulu 309 increased by 11.4%,6.9%and 4.6%,respectively compared with S68(control),and zucchini was straight,looked pleasing to the eye,and had strong disease resistance.[Conclusions]The zucchini varieties were selected and the high-quality,high-yield and high-efficiency cultivation techniques were integrated.

多晶硅装置尾气回收工艺研究进展

综述了改良西门子法多晶硅制备工艺及尾气回收研究现状,从回收率、回收效果及能耗等方面阐述了湿法回收、膜分离回收和干法回收3种尾气回收工艺。重点概述了多晶硅尾气干法回收工艺各个单元的研究进展,并根据现状总结了未来的研究方向。

碳中和背景下我国多晶硅产业现状及发展趋势

在碳中和、碳达峰的重大时代背景下,加速能源结构转型、改变当前能源结构已成共识。本文简述了目前多晶硅主要的生产工艺流程,从多方面对比了各工艺的优缺点,详述了改良西门子法与硅烷流化床法工艺的发展趋势,指出硅烷流化床法仍有巨大改进空间,有望给我国多晶硅行业带来崭新局面。多晶硅产业逐渐向我国转移,我国市场占有率不断提升,推动双碳目标的实现也更加离不开多晶硅产业的发展。

42对棒环形布棒还原炉能量耗散研究

由于无法对大型还原炉环状硅棒排布方式对能耗的影响做出准确判断,对42对棒西门子多晶硅还原炉进行仿真模拟计算,建立两种环状硅棒布棒方式(三环排布、四环排布)的还原炉模型。通过对还原炉的炉行为及棒行为分析发现,硅棒直径加大能耗也会相应加大,且这种变化受炉内流场和温度场共同影响;同时,还原炉内内环硅棒辐射能耗随硅棒直径的增大呈先增大后减小的变化趋势,而排列在外环的硅棒辐射损耗则随硅棒直径的增大而不断增大。针对42对棒西门子还原炉内硅棒的排布方法,提出选用硅棒三环排布的方式可达到降低该还原炉总能耗的目的。

多晶硅企业事故大气环境次生污染物影响分析

本文以某企业三氯氢硅储罐泄漏、燃烧引发次生污染物氯化氢气体在大气环境中扩散的风险事故情形为例,利用AFTOX模型进行大气环境风险的分析、预测,为此类风险事故的防范、应急与减缓措施提供了建议。

多晶硅安全生产风险分析和事故预防

随着光伏产业的迅猛发展,主要生产原料多晶硅的需求增长迅速。国内多晶硅生产以三氯氢硅西门子法为主,硅烷流化床法为辅。介绍了多晶硅行业的发展概况和安全形势,以三氯氢硅西门子法为例分析了多晶硅生产过程的危险性,对行业近年来发生的安全生产事故进行了分析,剖析事故形成的原因,提出预防事故发生的措施和建议。

乙酸改性γ-Al_(2)O_(3)高效去除痕量PCl_(3)的研究

在多晶硅生产过程中,为了不影响产品性能,必须将杂质PCl_(3)的含量降低到ppb的水平,然而,这目前仍旧是一个巨大的挑战。本研究提出了一种可高效去除痕量PC13的方法,即利用乙酸改性γ-Al_(2)O_(3)作为吸附剂,其可去除ppb级别的PCl_(3),去除率高达84.2%。Boehm滴定实验表明,改性后的γ-Al_(2)O_(3)表面羧基含量大幅增加,从而增加了吸附PCl_(3)的活性位点,使其对PCl_(3)的吸附性能显著提升。表征分析和DFT模拟计算表明,乙酸与γ-Al_(2)O_(3)主要是通过γ-Al_(2)O_(3)中的羟基H和乙酸中的羰基O形成氢键而相互作用的;除了物理吸附外,γ-Al_(2)O_(3)中的Al与PCl_(3)中的Cl,以及乙酸中的羰基O与PCl_(3)中的P之间还可通过电荷转移相互作用。连续五次循环实验表明,该吸附剂在低温下具有优异的再生性能。本研究开发的吸附剂由于其高效、易于再生和低成本等特点,在去除痕量PCl_(3)方面具有潜在的应用前景。

气相色谱与质谱联用在多晶硅生产上的应用进展

多晶硅是推动国家战略能源结构和新能源产业改革,发展太阳能光伏行业的重要原材料。气相色谱技术以其卓越的分离能力和准确的测量结果,在化学分析领域发挥着至关重要的作用。研究综述了气相色谱技术及气质联用技术在多晶硅分析方面的应用进展,介绍了气相色谱的分离机理,并结合具体应用实例对气相色谱及质谱联用技术在多晶硅生产中所涉及方面的应用进行了详细阐述。

Fabrication of n^+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide

Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.

Resistivity Instability in Polysilicon Resistors Under Metal Interco-nnects and Its Suppression by Compensating Ion Implantation

The resistivity instability of the boron-doped polysilicon resistors being a line resistance element of ICs is within the range of several kΩ's,especially when our running the underneath metal interconnects.Polysilicon resistors have been fabricated under various processing conditions as well as some electrical and crystallographic characteristics have been obtained.It is shown the resistivity instability mainly results from the variational carrier mobility.By analyzing the Seto's model,the barrier height and trapped charge density are observed reducing under the Al over layer.Therefore,the resistance instability is also caused by both the charge trapping/detrapping occurring at polysilicon grain boundaries and the resultant variation in the potential barrier height.The formation of high-stability polysilicon resistors in the range of several kΩ's has been decided by compensating the ion implantation,which makes the charge trapping/detrapping at the grain boundary less susceptible to the hydrogen annealing.

A Hybrid Parallel Strategy for Isogeometric Topology Optimization via CPU/GPU Heterogeneous Computing

This paper aims to solve large-scale and complex isogeometric topology optimization problems that consumesignificant computational resources. A novel isogeometric topology optimization method with a hybrid parallelstrategy of CPU/GPU is proposed, while the hybrid parallel strategies for stiffness matrix assembly, equationsolving, sensitivity analysis, and design variable update are discussed in detail. To ensure the high efficiency ofCPU/GPU computing, a workload balancing strategy is presented for optimally distributing the workload betweenCPU and GPU. To illustrate the advantages of the proposedmethod, three benchmark examples are tested to verifythe hybrid parallel strategy in this paper. The results show that the efficiency of the hybrid method is faster thanserial CPU and parallel GPU, while the speedups can be up to two orders of magnitude.

Polysilicon Over-Etching Time Control of Advanced CMOS Processing with Emission Microscopy

The emission microscopy （EMMI） test is proposed as an effective method to control the polysilicon over-etching time of advanced CMOS processing combined with a novel test structure, named a poly-edge structure. From the values of the breakdown voltage （Vbd） of MOS capacitors （poly-edge structure） ,it was observed that,with for the initial polysilicon etching-time, almost all capacitors in one wafer failed under the initial failure model. With the increase of polysilicon over-etching time, the number of the initial failure capacitors decreased. Finally, no initial failure capacitors were observed after the polysilicon over-etching time was increased by 30s. The breakdown samples with the initial failure model and intrinsic failure model underwent EMMI tests. The EMMI test results show that the initial failure of capacitors with poly-edge structures was due to the bridging effect between the silicon substrate and the polysilicon gate caused by the residual polysilicon in the ditch between the shallow-trench isolation region and the active area, which will short the polysilicon gate with silicon substrate after the silicide process.

国内外电子级多晶硅技术发展现状及未来展望

本文主要分析阐述了多晶硅的不同生产工艺及其优缺点。目前生产电子级多晶硅的主要方法是改良西门子法,该方法在生产过程中能耗较大,污染多,大规模量产比较困难;另外,其它两种工艺是硅烷法和氯硅烷还原法,目前仅适用于太阳能级多晶硅制备,未来是否可以满足电子级多晶硅制备要求有待研究;应该看到,分析表明:若氯硅烷还原法可以制备出电子级多晶硅,那么氯硅烷还原法与改良西门子法相结合后的工艺不失为新一代生产电子级多晶硅的好方法。

High-efficiency Planting Techniques of Five Crops a Year for Fresh Edible "Faba Bean/Spring Mazie+Soybean-Autumn Maize/Autumn Soybean"

The high-efficiency planting mode for five crops a year of fresh edible ＂faba bean/spring maize＋soybean-autumn maize/autumn soybean＂ was introduced, and its yield and economic benefits were compared with the planting mode of three crops a year of ＂faba bean-spring maize/red bean＂. The results showed that the planting method for fresh edible ＂faba bean/spring maize＋soybean-autumn maize/autumn soybean＂ was much easier to operate with the input-output ratio of about185.6%, and its yield and economic benefits were 2.09 and 1.83 times of that of the planting mode for three crops a year, significantly improving the agricultural yield and income of farmers. In addition, the cropping index of the planting mode for fresh edible fresh edible ＂faba bean/spring maize ＋soybean-autumn maize/autumn soybean＂ reached up to 350%, and planting faba bean once a year and soybean twice a year could make the biological fixation amount of nitrogen increase 350-450kg/m^2, which equaled to up to 700 kg/m^2 of urea, showing significant ecological and social benefits. Based on the comparison results, the high-yield culture techniques of the planting mode of fresh edible ＂faba bean/spring maize＋soybean-autumn maize/autumn soybean＂ were summarized.

Numerical Simulation of Heat Transfer Process and Heat Loss Analysis in Siemens CVD Reduction Furnaces

The modified Siemens method is the dominant process for the production of polysilicon,yet it is characterised by high energy consumption.Two models of laboratory-grade Siemens reduction furnace and 12 pairs of rods industrial-grade Siemens chemical vapor deposition(CVD)reduction furnace were established,and the effects of factors such as the diameter of silicon rods,the surface temperature of silicon rods,the air inlet velocity and temperature on the heat transfer process inside the reduction furnace were investigated by numerical simulation.The results show that the convective and radiant heat losses in the furnace increased with the diameter of the silicon rods.Furthermore,the radiant heat loss of the inner and outer rings of silicon rods was inconsistent for the industrial-grade reduction furnace.As the surface temperature of the silicon rods increases,the convective heat loss in the furnace increases,while the radiative heat loss remains relatively constant.When the inlet temperature and inlet velocity increase,the convective heat loss decreases,while the radiant heat loss remains relatively constant.Furthermore,the furnace wall surface emissivity increases,resulting in a significant increase in the amount of radiant heat loss in the furnace.In practice,this can be mitigated by polishing or adding coatings to reduce the furnace wall surface emissivity.

三层液精炼法提纯多晶硅的研究

在高温下利用密度差别,以熔硅、熔渣和熔铁(或铜)构建Si/Slag/Me三层液体系。冶金硅中的B和P杂质扩散到熔渣和底层金属中,达到提纯冶金硅的目的。热力学计算结果证明了这种方法具有可行性。实验研究分析了底层金属类型、炉渣成分及反应温度对B和P去除率的影响。结果表明:底层金属可有效吸收冶金硅中的P,其中铁比铜有更好的P吸收效果。底层金属对B的吸收效果不佳,B的去除主要归功于造渣提纯过程。在炉渣中加入10 wt%的CaF_(2),降低了渣黏度,可显著提高B和P的去除率。1600~1700℃温度范围内,提高反应温度有利于B的去除,对P的去除无显著作用。