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Real-time generation of circular patterns in electron beam lithography
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作者 Zhengjie Li Bohua Yin +3 位作者 Botong Sun Jingyu Huang Pengfei Wang Li Han 《Nanotechnology and Precision Engineering》 EI CAS CSCD 2024年第3期90-98,共9页
Electron beam lithography(EBL)involves the transfer of a pattern onto the surface of a substrate byfirst scanning a thin layer of organicfilm(called resist)on the surface by a tightly focused and precisely controlled el... Electron beam lithography(EBL)involves the transfer of a pattern onto the surface of a substrate byfirst scanning a thin layer of organicfilm(called resist)on the surface by a tightly focused and precisely controlled electron beam(exposure)and then selectively removing the exposed or nonexposed regions of the resist in a solvent(developing).It is widely used for fabrication of integrated cir-cuits,mask manufacturing,photoelectric device processing,and otherfields.The key to drawing circular patterns by EBL is the graphics production and control.In an EBL system,an embedded processor calculates and generates the trajectory coordinates for movement of the electron beam,and outputs the corresponding voltage signal through a digital-to-analog converter(DAC)to control a deflector that changes the position of the electron beam.Through this procedure,it is possible to guarantee the accuracy and real-time con-trol of electron beam scanning deflection.Existing EBL systems mostly use the method of polygonal approximation to expose circles.A circle is divided into several polygons,and the smaller the segmentation,the higher is the precision of the splicing circle.However,owing to the need to generate and scan each polygon separately,an increase in the number of segments will lead to a decrease in the overall lithography speed.In this paper,based on Bresenham’s circle algorithm and exploiting the capabilities of afield-programmable gate array and DAC,an improved real-time circle-producing algorithm is designed for EBL.The algorithm can directly generate cir-cular graphics coordinates such as those for a single circle,solid circle,solid ring,or concentric ring,and is able to effectively realizes deflection and scanning of the electron beam for circular graphics lithography.Compared with the polygonal approximation method,the improved algorithm exhibits improved precision and speed.At the same time,the point generation strategy is optimized to solve the blank pixel and pseudo-pixel problems that arise with Bresenham’s circle algorithm.A complete electron beam deflection system is established to carry out lithography experiments,the results of which show that the error between the exposure results and the preset pat-terns is at the nanometer level,indicating that the improved algorithm meets the requirements for real-time control and high precision of EBL. 展开更多
关键词 Electron beam lithography Circle production Micro–nano fabrication Pattern generator
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A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography 被引量:2
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作者 康晓辉 李志刚 +2 位作者 刘明 谢常青 陈宝钦 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第3期455-459,共5页
A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line i... A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions. 展开更多
关键词 electron beam lithography proximity effect electron-beam proximity correction
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Nano-Level Electron Beam Lithography
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作者 刘明 陈宝钦 +1 位作者 王云翔 张建宏 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第1期24-28,共5页
The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,st... The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm. 展开更多
关键词 electron beam lithography system RESOLUTION overlay accuracy
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Nanofabrication of 50 nm zone plates through e-beam lithography with local proximity effect correction for x-ray imaging 被引量:3
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作者 Jingyuan Zhu Sichao Zhang +8 位作者 Shanshan Xie Chen Xu Lijuan Zhang Xulei Tao Yuqi Ren Yudan Wang Biao Deng Renzhong Tai Yifang Chen 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第4期456-461,共6页
High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmos... High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmost zone-width is shrinking down to 50 nm or even below,patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect.The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction(PEC),because of the large variety in the line width.This work develops a new strategy,nicknamed as local proximity effect correction(LPEC),efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction.By this way,50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated.Their imaging capability in soft(1.3 keV)and hard(9 keV)x-ray,respectively,has been demonstrated in Shanghai Synchrotron Radiation Facility(SSRF)with the resolution of 50 nm.The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm. 展开更多
关键词 FRESNEL zone PLATES electron beam lithography LOCAL PROXIMITY effect correction x-ray imaging 50 NM resolution
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ELECTRON OPTICS OF VARIABLE RECTANGULAR SHAPED BEAM LITHOGRAPHY SYSTEM D J-2
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作者 康念坎 《Journal of Electronics(China)》 1993年第2期170-180,共11页
The electron optical column for the variable rectangular-shaped beam lithographysystem DJ-2 is described,with emphasis on the analysis of the optical configuration and theshaping deflection compensation.In this column... The electron optical column for the variable rectangular-shaped beam lithographysystem DJ-2 is described,with emphasis on the analysis of the optical configuration and theshaping deflection compensation.In this column the variable spot shaping is performed with aminimum number of lenses by a more reasonable optical scheme.A high-sensitivity electrostaticshaping deflector with sequential parallel-plates is implemented for high-speed spot shaping.With a precise linear and rotational approach,the spot current density,the edge resolution aswell as the position of spot origin remain unchanged when the spot size varies.Experiments showthat the spot current density of over 0.4 A/cm^2 is obtained with a tungsten hairpin cathode,andthe edge resolution is better than 0.2μm within a 2×2 mm^2 field size. 展开更多
关键词 ELECTRON optics ELECTRON beam lithography VARIABLE rectangular-shaped beam
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DESIGN AND PERFORMANCE OF SHAPING DEFLECTORS FOR VARIABLY SHAPED ELECTRON BEAM LITHOGRAPHY
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作者 康念坎 江钧基 +2 位作者 吴伟 黄兰友 吴明均 《Journal of Electronics(China)》 1990年第4期336-346,共11页
In order to obtain uniform exposure in variably shaped electron beam lithography,the beam current density and edge resolution on the target must not change for different spotshapes and sizes.The key to the goal is the... In order to obtain uniform exposure in variably shaped electron beam lithography,the beam current density and edge resolution on the target must not change for different spotshapes and sizes.The key to the goal is the appropriate design of shaping deflectors.A linearand rotation compensation approach is presented.Values of linear and rotation compensationfactors versus the distances between electron source image and centers of deflectors are measuredon an experimental electron beam column with variable spot shaping.The experimental resultsare in good agreement with the calculated ones. 展开更多
关键词 ELECTRON beam lithography ELECTRON Optics SHAPING DEFLECTOR
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Effects of electron beam lithography process parameters on structure of silicon optical waveguide based on SOI
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作者 ZHENG Yu GAO Piao-piao +2 位作者 TANG Xin LIU Jian-zhe DUAN Ji-an 《Journal of Central South University》 SCIE EI CAS CSCD 2022年第10期3335-3345,共11页
Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl ... Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl methacrylate(PMMA) after development was studied using a silicon on insulator(SOI) wafer with 220 nm top silicon as the substrate. The relationship between exposure dose and structure pattern width after development was analyzed according to the measurement results. The optimum exposure dose of 220 μC/cm^(2) was found to obtain a final structure consistent with the designed mask value through subsequent processes. At the same time, according to the image segmentation curve tracking technology, the contour extraction process of the dose test results was carried out, and the relationship among mask design value, exposure dose and two-dimensional roughness of boundary contour was analyzed, which can provide reference for the subsequent electron beam lithography of the same substrate material. 展开更多
关键词 silicon optical waveguide electron beam lithography exposure dose ROUGHNESS
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Bragg-Angle Diffraction in Slant Gratings Fabricated by Single-Beam Interference Lithography
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作者 Xinping Zhang Shengfei Feng Tianrui Zhai 《Optics and Photonics Journal》 2012年第1期13-16,共4页
A single-beam interference-lithography scheme is demonstrated for the fabrication of large-area slant gratings, which requires exposure of the photoresist thin film spin-coated on a glass plate with polished side-wall... A single-beam interference-lithography scheme is demonstrated for the fabrication of large-area slant gratings, which requires exposure of the photoresist thin film spin-coated on a glass plate with polished side-walls to a single laser beam in the ultraviolet and requires small coherence length of the laser. No additional beam splitting scheme and no adjustments for laser-beam overlapping and for optical path-length balancing are needed. Bragg-angle diffractions are observed as strong optical extinction that is tunable with changing the angle of incidence. This device is important for the design of efficient filters, beam splitters, and photonic devices. 展开更多
关键词 Slant GRATING SINGLE-beam Interference lithography Bragg-Angle DIFFRACTION
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具有双重显影特性的多用途单分子树脂化学放大光刻胶
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作者 苑晓冬 陈金平 +2 位作者 于天君 曾毅 李嫕 《应用化学》 CAS CSCD 北大核心 2024年第7期1024-1034,共11页
化学放大光刻胶(CARs)由于其在分辨率和灵敏度方面的出色性能而广泛应用于光刻领域。本文报道了一种基于单分子树脂的多用途化学放大光刻胶SP8-PAG_(AN),可同时用于365 nm光刻和电子束光刻。该体系主要由螺二芴结构的单分子树脂主体材料... 化学放大光刻胶(CARs)由于其在分辨率和灵敏度方面的出色性能而广泛应用于光刻领域。本文报道了一种基于单分子树脂的多用途化学放大光刻胶SP8-PAG_(AN),可同时用于365 nm光刻和电子束光刻。该体系主要由螺二芴结构的单分子树脂主体材料(SP-8Boc)和N-(三氟甲基磺酸酯基)蒽-1,9-二羧酰亚胺非离子型光致产酸剂(PAGAn)组成。测试了产酸剂PAGAN在365 nm紫外光激发下的光致产酸效率ΦH+为23%。研究了SP8-PAG_(AN)光刻胶的365 nm光刻和电子束光刻性能。365 nm光刻中,分别利用四甲基氢氧化胺(TMAH,质量分数2.38%)水溶液和正己烷作为显影液,可实现1μm正性和负性光刻图案。电子束光刻中,可实现50 nm Line/Space(L/S)的正性密集线条图案(曝光剂量110μC/cm^(2)),32 nm L/S的负性密集线条图案(曝光剂量40μC/cm^(2))以及19 nm L/3S负性半密集线条图案(曝光剂量96μC/cm^(2))。本研究工作提供了一种具有双重显影特性的多用途单分子树脂化学放大光刻胶的新范例。 展开更多
关键词 化学放大光刻胶 双重显影 单分子树脂 365 nm光刻 电子束光刻
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微型阵列束闸设计与实验
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作者 张利新 孙博彤 +3 位作者 刘星云 殷伯华 刘俊标 韩立 《光学精密工程》 EI CAS CSCD 北大核心 2024年第13期2061-2069,共9页
微型阵列束闸是多束电子束曝光系统的关键部件,用于控制多束电子束的开/关,实现复杂图形的快速曝光。对3×3微型阵列束闸进行了设计与制作,并进行了多束电子束偏转实验研究。对阵列束闸结构进行了优化设计,并基于MEMS加工工艺成功... 微型阵列束闸是多束电子束曝光系统的关键部件,用于控制多束电子束的开/关,实现复杂图形的快速曝光。对3×3微型阵列束闸进行了设计与制作,并进行了多束电子束偏转实验研究。对阵列束闸结构进行了优化设计,并基于MEMS加工工艺成功制备了阵列束闸。针对阵列束闸的控制要求,设计了可单独控制的阵列束闸控制器。将控制器与阵列束闸进行连接,验证了控制器的偏转速度与功能完整性。最后,在多束电子束测试平台对阵列束闸进行了偏转实验,研究串扰对电子束偏转的影响。实验结果表明:阵列束闸控制器的偏转速度达到43.5 MHz,大于设计值10 MHz;阵列束闸成功实现了单独控制电子束开和关,束闸的偏转距离在25~30μm之间,小于计算值43.29μm;串扰程度均小于3%。该阵列束闸已经具备多束电子束开/关控制功能,但在偏转精度,设计和加工工艺等方面还需进一步优化和完善。 展开更多
关键词 电子束曝光 阵列束闸 多束电子束 串扰 偏转速度
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Electron beam lithography on nonplanar and irregular surfaces 被引量:1
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作者 Chenxu Zhu Huseyin Ekinci +2 位作者 Aixi Pan Bo Cui Xiaoli Zhu 《Microsystems & Nanoengineering》 SCIE EI CSCD 2024年第2期1-23,共23页
E-beam lithography is a powerful tool for generating nanostructures and fabricating nanodevices with fine features approaching a few nanometers in size.However,alternative approaches to conventional spin coating and d... E-beam lithography is a powerful tool for generating nanostructures and fabricating nanodevices with fine features approaching a few nanometers in size.However,alternative approaches to conventional spin coating and development processes are required to optimize the lithography procedure on irregular surfaces.In this review,we summarize the state of the art in nanofabrication on irregular substrates using e-beam lithography.To overcome these challenges,unconventional methods have been developed.For instance,polymeric and nonpolymeric materials can be sprayed or evaporated to form uniform layers of electron-sensitive materials on irregular substrates.Moreover,chemical bonds can be applied to help form polymer brushes or self-assembled monolayers on these surfaces.In addition,thermal oxides can serve as resists,as the etching rate in solution changes after e-beam exposure.Furthermore,e-beam lithography tools can be combined with cryostages,evaporation systems,and metal deposition chambers for sample development and lift-off while maintaining low temperatures.Metallic nanopyramids can be fabricated on an AFM tip by utilizing ice as a positive resistor.Additionally,Ti/Au caps can be patterned around a carbon nanotube.Moreover,3D nanostructures can be formed on irregular surfaces by exposing layers of anisole on organic ice surfaces with a focused e-beam.These advances in e-beam lithography on irregular substrates,including uniform film coating,instrumentation improvement,and new pattern transferring method development,substantially extend its capabilities in the fabrication and application of nanoscale structures. 展开更多
关键词 lithography beam COATING
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基于101.6 mm晶圆35 nm InP HEMT工艺的340 GHz低噪声放大器芯片研制
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作者 孙远 陈忠飞 +4 位作者 陆海燕 吴少兵 任春江 王维波 章军云 《固体电子学研究与进展》 CAS 2024年第5期379-383,共5页
实现了在101.6 mm InP晶圆上制备35 nm的增强型InP高电子迁移率晶体管。通过InAs复合沟道外延结构设计,使得室温二维电子气迁移率面密度乘积达到4.2×10^(16)/(V·s)。采用了铂钛铂金埋栅工艺技术,典型器件最大跨导达到2900 mS/... 实现了在101.6 mm InP晶圆上制备35 nm的增强型InP高电子迁移率晶体管。通过InAs复合沟道外延结构设计,使得室温二维电子气迁移率面密度乘积达到4.2×10^(16)/(V·s)。采用了铂钛铂金埋栅工艺技术,典型器件最大跨导达到2900 mS/mm,电流增益截止频率达到460 GHz,最高振荡频率为720 GHz。同时研制出340 GHz低噪声放大器芯片,在310~350 GHz内小信号增益22~27 dB,噪声系数在8 dB以下。建立了340 GHz InP低噪声放大器芯片技术平台,为太赫兹低噪声单片微波集成电路的发展奠定基础。 展开更多
关键词 磷化铟(InP) 高电子迁移率晶体管(HEMT) 电子束直写 太赫兹 低噪声放大器
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新型锑氧簇光刻胶的性能与机理研究
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作者 司友明 郑凌峰 +2 位作者 陈鹏忠 樊江莉 彭孝军 《化工学报》 EI CSCD 北大核心 2024年第4期1705-1717,共13页
随着半导体行业集成度越来越高,对光刻材料提出了更高的要求。近年来,金属氧簇光刻胶由于尺寸小、结构设计灵活,得到了广泛的研究。目前锑基金属光刻胶仅局限于含锑配合物。开发出新型锑氧簇光刻胶,通过对比金属有机组装Sb_(4)O-1与自组... 随着半导体行业集成度越来越高,对光刻材料提出了更高的要求。近年来,金属氧簇光刻胶由于尺寸小、结构设计灵活,得到了广泛的研究。目前锑基金属光刻胶仅局限于含锑配合物。开发出新型锑氧簇光刻胶,通过对比金属有机组装Sb_(4)O-1与自组装Sb_(4)O-2的溶解度差异说明自组装策略优势。原子力显微镜证实Sb_(4)O-2光刻胶可形成光滑薄膜,并获得低粗糙度值(均方根粗糙度<0.3 nm)。电子束光刻(EBL)证明Sb_(4)O-2光刻胶优异的图案化能力(线宽<50 nm),理论计算支持X射线光电子能谱(XPS)分析的新型自组装Sb_(4)O-2“配体解离”机制。 展开更多
关键词 锑氧簇 自组装 光刻胶 理论计算 电子束光刻 成像 溶解性 纳米材料
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基于激光干涉光刻技术的产品防伪包装设计研究
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作者 张蔚 《激光杂志》 CAS 北大核心 2024年第4期248-253,共6页
为了提高产品防伪包装设计效果,提出基于激光干涉光刻技术的产品防伪包装设计方法。利用光纤耦合激光传输控制多光束干涉信息,基于光纤波导分束形成技术,集成处理光束传播路径,基于光束振幅、相位和偏振联合调制方法,提取产品防伪包装... 为了提高产品防伪包装设计效果,提出基于激光干涉光刻技术的产品防伪包装设计方法。利用光纤耦合激光传输控制多光束干涉信息,基于光纤波导分束形成技术,集成处理光束传播路径,基于光束振幅、相位和偏振联合调制方法,提取产品防伪包装的防伪状态特征量,基于振幅型或相位型的微结构衍射单元阵列传输方法,构建激光干涉光刻模型,实现四光束、五光束和六光束的多光束激光防伪。测试结果表明,所提方法的被篡改率最低为0.05%,解密时间较短,均在30 ms左右,MSE为0.673%,PSNR为47.40 dB,SSIM为0.975,采用该方法进行产品防伪包装设计,提高了产品的激光防伪能力,降低被篡改率。 展开更多
关键词 激光干涉光刻技术 产品防伪包装设计 光束传播 多光束激光
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电子束光刻HSQ显影对比度中的图形密度效应
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作者 梁惠康 段辉高 《微纳电子技术》 CAS 2024年第2期137-144,共8页
氢倍半氧硅烷(HSQ)是一种高分辨的电子束抗蚀剂,其稀疏结构的分辨率已证实达到亚5 nm。但在实际应用中,很难达到约10 nm周期的密集结构,其中间隙残胶问题是无法实现更高分辨率的根本原因。利用传统大块薄膜获取的显影对比度进行理论计算... 氢倍半氧硅烷(HSQ)是一种高分辨的电子束抗蚀剂,其稀疏结构的分辨率已证实达到亚5 nm。但在实际应用中,很难达到约10 nm周期的密集结构,其中间隙残胶问题是无法实现更高分辨率的根本原因。利用传统大块薄膜获取的显影对比度进行理论计算,得到的结果与实际曝光的分辨率极限存在较大差异。针对这一问题,提出了与图形相关的显影对比度,提高了传统显影对比度在密集图形分辨率极限预测中的适用性。对HSQ的微观显影机理进行了阐述,分析了大块薄膜、亚10 nm周期密集高分辨结构显影过程和显影对比度曲线差异,预测和实验验证了超稀疏结构的超高显影对比度(线剂量对比度约为114)。该研究为改善HSQ工艺及提升计算光刻模型的精度提供了新的思路。 展开更多
关键词 电子束光刻(EBL) 氢倍半氧硅烷(HSQ) 显影对比度 分辨率极限 显影机理 图形密度效应
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电子束曝光机子系统光柱控制器设计
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作者 何远湘 龙会跃 +1 位作者 梁文彬 苏鑫 《电子工业专用设备》 2024年第4期30-35,共6页
为了提高电子束曝光机光柱控制器稳定性和控制精度,通过多年研究提出了一套功能较为完备的新型光柱控制的硬件设计方案,通过对电子束聚焦、对中、偏转、扫描曝光等参数精准控制,将图形发生器产生各项数字信号变换成对应的模拟量,稳定地... 为了提高电子束曝光机光柱控制器稳定性和控制精度,通过多年研究提出了一套功能较为完备的新型光柱控制的硬件设计方案,通过对电子束聚焦、对中、偏转、扫描曝光等参数精准控制,将图形发生器产生各项数字信号变换成对应的模拟量,稳定地控制电子束对承放在激光工作台上的掩模基片进行扫描曝光,从而达到高质量生产。 展开更多
关键词 电子束曝光机 光柱 聚焦 束闸 偏转 数模转换(DAC)转接
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Fabrication of a 256-bits organic memory by soft x-ray lithography 被引量:1
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作者 刘兴华 鲁闻生 +4 位作者 姬濯宇 涂德钰 朱效立 谢常青 刘明 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第5期499-504,共6页
This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writin... This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm. 展开更多
关键词 molecular memory crossbar array soft x-ray lithography electron beam lithography
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POLYMETHYLMETHACRYLATE LANGMUIR-BLODGETT FILMS FOR HIGH RESOLUTION ELECTRON BEAM RESIST
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作者 鲁武 顾宁 +2 位作者 韦钰 沈浩瀛 张岚 《Journal of Electronics(China)》 1994年第3期247-252,共6页
Ultra-thin (20-100nm) polymethylmethacrylate(PMMA) films prepared by Langmuir-Blodgett techniques have been explored as high resolution electron beam resists. A Hitachi S-450 Scanning Electron Microscope (SEM) has bee... Ultra-thin (20-100nm) polymethylmethacrylate(PMMA) films prepared by Langmuir-Blodgett techniques have been explored as high resolution electron beam resists. A Hitachi S-450 Scanning Electron Microscope (SEM) has been refitted for a high resolution electron beam exposure system. The lithographic properties and exposure conditions of LB PMMA films were investigated. 0.15μm lines-and-spaces patterns were achieved by using the SEM as the exposure tool. The results demonstrate that the etch resistance of such films is sufficiently good to allow patterning of a 20 nm aluminum film suitable for mask fabrication. 展开更多
关键词 LANGMUIR-BLODGETT film ELECTRON beam lithography RESIST
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Nonlinear Solubility Behavior of Polymer and Oligomer Resists at Electron Beam Modification
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作者 Katia Vutova Georgy Mladenov +4 位作者 Elena Koleva Ivan Kostic Anna Bencurova Pavol Nemec TakeshiTanaka 《材料科学与工程(中英文B版)》 2011年第4期523-529,共7页
关键词 线性聚合物 电子束改性 行为机制 溶解度 齐聚物 电子束光刻 倍半硅氧烷 曝光剂量
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基于飞秒激光的高速双光子刻写技术 被引量:8
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作者 杨顺华 丁晨良 +4 位作者 朱大钊 杨臻垚 刘勇 匡翠方 刘旭 《光电工程》 CAS CSCD 北大核心 2023年第3期34-55,共22页
基于飞秒激光的双光子聚合(two-photon polymerization,TPP)加工技术一直是三维微纳加工技术中的研究热点。随着生命科学、材料工程、微纳光学等领域对复杂、大面积微型三维器件制备需求的提升,TPP加工效率不足的问题日益严重,加工时间... 基于飞秒激光的双光子聚合(two-photon polymerization,TPP)加工技术一直是三维微纳加工技术中的研究热点。随着生命科学、材料工程、微纳光学等领域对复杂、大面积微型三维器件制备需求的提升,TPP加工效率不足的问题日益严重,加工时间过长不仅造成加工结构的不稳定,更是严重阻碍这些重要三维器件的进一步推广应用。本文以TPP加工效率提升方面的研究工作为主线,分别从单光束刻写、并行多光束刻写、面曝光和体曝光四个方式进行总结与对比,阐述相应的光学系统设计、刻写策略、刻写精度与通量等方面的研究情况,总结各种技术的优势与劣势,同时展望未来发展趋势。 展开更多
关键词 飞秒激光直写 双光子光刻 单光束扫描 多焦点并行 面曝光 体曝光
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