Effect of dielectric material on the uniformity of nanosecond pulsed dielectric barrier discharge

Dielectric barrier discharge(DBD)is considered as a promising technique to produce large volume uniform plasma at atmospheric pressure,and the dielectric barrier layer between the electrodes plays a key role in the DBD processes and enhancing discharge uniformity.In this work,the uniformity and discharge characteristics of the nanosecond(ns)pulsed DBD with dielectric barrier layers made of alumina,quartz glass,polycarbonate(PC),and polypropylene(PP)are investigated via discharge image observation,voltage-current waveform measurement and optical emission spectral diagnosis.Through analyzing discharge image by gray value standard deviation method,the discharge uniformity is quantitatively calculated.The effects of the space electric field intensity,the electron density(Ne),and the space reactive species on the uniformity are studied with quantifying the gap voltage Ug and the discharge current Ig,analyzing the recorded optical emission spectra,and simulating the temporal distribution of Ne with a one-dimensional fluid model.It is found that as the relative permittivity of the dielectric materials increases,the space electric field intensity is enhanced,which results in a higher Ne and electron temperature(Te).Therefore,an appropriate value of space electric field intensity can promote electron avalanches,resulting in uniform and stable plasma by the merging of electron avalanches.However,an excessive value of space electric field intensity leads to the aggregation of space charges and the distortion of the space electric field,which reduce the discharge uniformity.The surface roughness and the surface charge decay are measured to explain the influences of the surface properties and the second electron emission on the discharge uniformity.The results in this work give a comprehensive understanding of the effect of the dielectric materials on the DBD uniformity,and contribute to the selection of dielectric materials for DBD reactor and the realization of atmospheric pressure uniform,stable,and reactive plasma sources.

Enhancing the Goos-Hänchen shift based on quasi-bound states in the continuum through material asymmetric dielectric compound gratings

Quasi-bound state in the continuum(QBIC)resonance is gradually attracting attention and being applied in Goos-Hänchen(GH)shift enhancement due to its high quality(Q)factor and superior optical confinement.Currently,symmetry-protected QBIC resonance is often achieved by breaking the geometric symmetry,but few cases are achieved by breaking the material symmetry.This paper proposes a dielectric compound grating to achieve a high Q factor and high-reflection symmetry-protectede QBIC resonance based on material asymmetry.Theoretical calculations show that the symmetry-protected QBIC resonance achieved by material asymmetry can significantly increase the GH shift up to-980 times the resonance wavelength,and the maximum GH shift is located at the reflection peak with unity reflectance.This paper provides a theoretical basis for designing and fabricating high-performance GH shift tunable metasurfaces/dielectric gratings in the future.

Structure and material study of dielectric laser accelerators based on the inverse Cherenkov effect

Dielectric laser accelerators(DLAs)are considered promising candidates for on-chip particle accelerators that can achieve high acceleration gradients.This study explores various combinations of dielectric materials and accelerated structures based on the inverse Cherenkov effect.The designs utilize conventional processing methods and laser parameters currently in use.We optimize the structural model to enhance the gradient of acceleration and the electron energy gain.To achieve higher acceleration gradients and energy gains,the selection of materials and structures should be based on the initial electron energy.Furthermore,we observed that the variation of the acceleration gradient of the material is different at different initial electron energies.These findings suggest that on-chip accelerators are feasible with the help of these structures and materials.

Why Sustainable Porous Carbon Should be Further Explored as Radar-Absorbing Material? A Comparative Study with Different Nanostructured Carbons

Radar Absorbing Materials(RAM)are a class of composites that can attenuate incident electromagnetic waves to avoid radar detection.Most carbon allotropes that have the potential to be used as RAM are either carbon nano-tubes(CNTs),graphene,carbon black(CB)and ultimately,sustainable porous carbon(SPC).Here,black wattle bark waste(following tannin extraction)was used as a sustainable source to produce SPC made from biomass waste.It was characterized and used as afiller for a silicone rubber matrix to produce aflexible RAM.The elec-tromagnetic performance of this composite was compared with composites made with commercial CB and CNT through reflection loss(RL),where-10 dB is equivalent to 90%of attenuation.These composites were evaluated in single-layer,double-layer,and as radar absorbing structures(RAS)with the aim of improving their effective absorption bandwidth(EAB)performances and a reduction in costs.The CNT composite presented a RL of-26.85 dB at 10.89 GHz and an EAB of 2.6 GHz with a 1.9 mm thickness,while the double-layer structures using CNT and SPC provided a RL of-19.74 dB at 10.75 GHz and an EAB of 2.51 GHz.Furthermore,the double-layer structures are~42%cheaper than the composite using only CNT since less material is used.Finally,the largest EAB was achieved with a RAS using SPC,reaching~2.8 GHz and a RL of-49.09 dB at 10.4 GHz.Summarizing,SPC made of black wattle bark waste can be a competitive,alternative material for use as RAM and RAS since it is cheaper,sustainable,and suitable for daily life uses such as absorbers for anechoic chambers,sensors,and elec-tromagnetic interference shields for electronics,wallets,vehicles,and others.

Plasma-assisted ammonia synthesis in a packed-bed dielectric barrier discharge reactor:roles of dielectric constant and thermal conductivity of packing materials

In this article,plasma-assisted NH;synthesis directly from N;and H;over packing materials with different dielectric constants(BaTiO_(2),TiO_(2) and SiO_(2))and thermal conductivities(Be O,Al N and Al_(2)O_(2))at room temperature and atmospheric pressure is reported.The higher dielectric constant and thermal conductivity of packing material are found to be the key parameters in enhancing the NH;synthesis performance.The NH;concentration of 1344 ppm is achieved in the presence of BaTiO_(2),which is 106%higher than that of SiO_(2),at the specific input energy(SIE)of 5.4 k J·l^(-1).The presence of materials with higher dielectric constant,i.e.BaTiO_(2) and TiO_(2)in this work,would contribute to the increase of electron energy and energy injected to plasma,which is conductive to the generation of chemically active species by electron-impact reactions.Therefore,the employment of packing materials with higher dielectric constant has proved to be beneficial for NH;synthesis.Compared to that of Al_(2)O_(3),the presence of Be O and Al N yields 31.0%and 16.9%improvement in NH;concentration,respectively,at the SIE of5.4 k J·l^(-1).The results of IR imaging show that the addition of Be O decreases the surface temperature of the packed region by 20.5%to 70.3℃ and results in an extension of entropy increment compared to that of Al_(2)O_(3),at the SIE of 5.4 k J·l^(-1).The results indicate that the presence of materials with higher thermal conductivity is beneficial for NH;synthesis,which has been confirmed by the lower surface temperature and higher entropy increment of the packed region.In addition,when SIE is higher than the optimal value,further increasing SIE would lead to the decrease of energy efficiency,which would be related to the exacerbation in reverse reaction of NH;formation reactions.

Dielectric constant predictions for energetic materials using quantum calculations

The dielectric constant(DC)is one of the key properties for detection of threat materials such as Improvised Explosive Devices(IEDs).In the present paper,the density functional theory(DFT)as well as ab-initio approaches are used to explore effective methods to predict dielectric constants of a series of 12 energetic materials(EMs)for which experimental data needed to experimentally determine the dielectric constant(refractive indices)are available.These include military grades energetic materials,nitro and peroxide compounds,and the widely used nitroglycerin.Ab-initio and DFT calculations are conducted.In order to calculate dielectric constant values of materials,potential DFT functional combined with basis sets are considered for testing.Accuracy of the calculations are compared to experimental data listed in the scientific literature,and time required for calculations are both evaluated and discussed.The best functional/basis set combinations among those tested are CAM-B3LYP and AUG-ccpVDZm,which provide great results,with accuracy deviations below 5%when calculated results are compared to experimental data.

Composite Materials Damage Modeling Based on Dielectric Properties

Composite materials, by nature, are universally dielectric. The distribution of the phases, including voids and cracks, has a major influence on the dielectric properties of the composite materials. The dielectric relaxation behavior measured by Broadband Dielectric Spectroscopy (BbDS) is often caused by interfacial polarization, which is known as Maxwell-Wagner-Sillars polarization that develops because of the heterogeneity of the composite materials. A prominent mechanism in the low frequency range is driven by charge accumulation at the interphases between different constituent phases. In our previous work, we observed in-situ changes in dielectric behavior during static tensile testing, and also studied the effects of applied mechanical and ambient environments on composite material damage states based on the evaluation of dielectric spectral analysis parameters. In the present work, a two dimensional conformal computational model was developed using a COMSOL™multi-physics module to interpret the effective dielectric behavior of the resulting composite as a function of applied frequency spectra, especially the effects of volume fraction, the distribution of the defects inside of the material volume, and the influence of the permittivity and Ohmic conductivity of the host materials and defects.

Dielectric Permittivity of Various Cement-Based Materials during the First 24 Hours Hydration

The dielectric permittivity of cementitious materials during 24 hours hydration period at a frequency of 2.45 GHz using a network analyzer with open-ended probe technique was measured. Influences of water-to-cementitious ratios, cement types, pozzolans and aggregate types are taken into consideration. The results show that dielectric permittivity is strongly affected by initial water-to-cementitious ratio and the rate of hydration reaction which can be changed by fineness of cement (Types 1 and 3), pozzolan materials and aggregates (river sand with/without crushed limestone rock). Dielectric permittivity is relatively high and remains constant during the dormant period, after that it decreases rapidly when the hydration reaction resumes and continues to decrease during the acceleratory period.

Influence of the gassing materials on the dielectric properties of air

Influence of the gassing materials, such as PA6, PMMA, and POM on the dielectric properties of air are investigated. In this work, the fundamental electron collision cross section data were carefully selected and validated. Then the species compositions of the air–organic vapor mixtures were calculated based on the Gibbs free energy minimization. Finally, the Townsend ionization coefficient, the Townsend electron attachment coefficient and the critical reduced electric field strength were derived from the calculated electron energy distribution function by solving the Boltzmann transport equation. The calculation results indicated that H;O with large attachment cross sections has a great impact on the critical reduced electric field strength of the air–organic vapor mixtures. On the other hand, the vaporization of gassing materials can help to increase the dielectric properties of air circuit breakers to some degree.

Influence of CaxSr1-x(0≤x≤1)Substitution for Zn on Microwave Dielectric Properties of Li2ZnTi3O8 Ceramic as Temperature Stable Materials

A temperature stable Li2Zn0.95(SrxCa1-x)0.05Ti3O8(0≤x≤1)ceramics were fabricated using a conventional solid-state route sintered at 1100℃for 4 h.The XRD results indicate that the main phase Li2ZnTi3O8 and secondary phase including SrxCa1-xTiO3(0≤x≤1)solid solution and TiO2 co-exist in composite and form a stable composite system when the(CaxSr1-x)(0≤x≤1)substitutes for Zn of Li2ZnTi3O8 ceramic.As x is increased from 0 to 1,the relative permittivity(εr)increases from 26.65 to 27.12,and the quality factor(Q×f)increases from 63300 to 66600 GHz.With the increased of x,the temperature coefficient of resonant frequency(τf)increases from 0.27 to 8.23 ppm/℃,and then decreases to 3.51 ppm/℃.On the whole,the Li2Zn0.95(SrxCa1-x)0.05Ti3O8(0≤x≤1)ceramics show excellent comprehensive properties of middleεr=25-27,higher Q×f≥60000 GHz andτf≤±8.5 ppm/℃.

A Study of the Aging of a-Al_2O_3 Dielectric Material in DBD Plasma

The performance of dielectric material is a key factor against a long time action in dielectric barrier discharge （DBD） plasma. In this study, the aging of the Al2O3 dielectric material was studied by the Atomic Force Microscope （AFM）, X-ray Photoelectron spectrum （XPS） and Auger electron spectrum （AES） methods. The results showerd that the performance of the dielectric does not descend after an 1000 h aging experiment. Therefore the thin dielectric layers of α-Al2O3 porcelain with a purity above 99% can sustain a long time action of DBD plasma and form gas ionization discharges steadily.

Error Correction in Permittivity Measurement of High Dielectric Constant Materials Based on Cavity Perturbation Method

The purpose of this paper is to reduce the error when measuring high dielectric constant materials.In this paper,the reason why the error introduced is analyzed firstly.Then,with HFSS,the method of choosing the size of cavity and the dimension of dielectric materials is proposed.And several error correction curves are provided for measuring high dielectric constant materials.Finally,the experiment is conducted to validate the feasibility of our analysis.

Influence of dielectric materials on uniformity of large-area capacitively coupled plasmas for N_2/Ar discharges

The effect of the dielectric ring on the plasma radial uniformity is numerically investigated in the practical 450-mm capacitively coupled plasma reactor by a two-dimensional self-consistent fluid model. The simulations were performed for N2/Ar discharges at the pressure of 300 Pa, and the frequency of 13.56 MHz. In the practical plasma treatment process,the wafer is always surrounded by a dielectric ring, which is less studied. In this paper, the plasma characteristics are systematically investigated by changing the properties of the dielectric ring, i.e., the relative permittivity, the thickness and the length. The results indicate that the plasma parameters strongly depend on the properties of the dielectric ring. As the ratio of the thickness to the relative permittivity of the dielectric ring increases, the electric field at the wafer edge becomes weaker due to the stronger surface charging effect. This gives rise to the lower N~+ ion density, flux and N atom density at the wafer edge. Thus the homogeneous plasma density is obtained by selecting optimal dielectric ring relative permittivity and thickness. In addition, we also find that the length of the dielectric ring should be as short as possible to avoid the discontinuity of the dielectric materials, and thus obtain the large area uniform plasma.

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

By solving Poisson＇s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate （DMSG） metal-oxide semiconductor field-effect transistor （MOSFET） with a high-k gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering （FIBL） on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-k dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.

Approximate Electromagnetic Cloaking of a Dielectric Sphere Using Homogeneous Isotropic Multi-Layered Materials

In cloaking, a body is hidden from detection by surrounding it by a coating consisting of an unusual anisotropic nonhomogeneous material. The permittivity and permeability of such a cloak are determined by the coordinate transformation of compressing a hidden body into a point or a line. The radially-dependent spherical cloaking shell can be approximately discretized into many homogeneous anisotropic layers;each anisotropic layer can be replaced by a pair of equivalent isotropic sub-layers, where the effective medium approximation is used to find the parameters of these two equivalent sub-layers. In this work, the scattering properties of cloaked dielectric sphere is investigated using a combination of approximate cloaking, where the dielectric sphere is transformed into a small sphere rather than to a point, together with discretizing the cloaking material using pairs of homogeneous isotropic sub-layers. The back-scattering normalized radar cross section, the scattering patterns are studied and the total scattering cross section against the frequency for different number of layers and transformed radius.

Effect of Hot Carrier on Amplitude Modulation and Demodulation of Gaussian High Power Helicon Wave in Homogeneous Longitudinally Magnetized Strain Dependent Dielectric Material

In the present communication, the hydrodynamic model is used to investigate the amplitude modulation as well as demodulation of an electromagnetic wave of high power helicon pump wave into another helicon wave in strain dependent dielectric material incorporating carrier heating (CH) effects. The consideration of CH in modulation and demodulation is prime importance for the adding of new dimension in analysis of amplification of acoustic helicon wave. By using the dispersion relation, threshold pump electric filed and growth rate of unstable mode from the modulation and demodulation of the high power helicon wave well above from the threshold value will be discussed in the present analysis. The numerical analysis is applied to a strain dependent dielectric material, BaTiO3 at room temperature and irradiated with high power helicon wave of frequency 1.78 × 1014 Hz. This material is very sensitive to the pump intensities, therefore during studies, Gaussian shape of the helicon pump wave is considered during the propagation in stain dependent dielectric material and opto-acoustic wave in the form of Gaussian profile (ω0,κ0) is induced longitudinally along the crystallographic plane of BaTiO3. Its variation is caused by the available magnetic field (ωc), interaction length (z) and pulsed duration of interaction (τ). From the analysis of numerical results, the incorporation of CH effect can effectively modify the magnitude of modulation or demodulation of the amplitude of high power helicon laser wave through diffusion process. Not only the amplitude modulation and demodulation of the wave, the diffusion of the CH effectively modifies the growth rate of unstable mode of frequency in BaTiO3. The propagation of the threshold electric field shows the sinusoidal or complete Gaussian profile, whereas this profile is found to be completely lost in growth of unstable mode. It has also been seen that the growth rate is observed to be of the order of 108 - 1010 s-1 but from diffusion of carrier heating, and that its order is enhanced from 1010 - 1012 s-1 with the variation of the magnetized frequency from 1 to 2.5 × 1014 Hz.

MATERIAL MULTIPOLE MECHANICS OF ELASTIC DIELECTRIC COMPOSITES

The overall mechanical and electrical behaviors of elastic dielectric composites are investigated with the aid of the concept of material multipoles. In particular, by introducing a statistical continuum material multipole theory, the effects of the electric-elastic interaction and the microstructure (size, shape, orientation,...) of inhomogeneous particles on the overall behaviors of the composites can be obtained. A basic solution for an ellipsoidal elastic inhomogeneity with electric polarization in an infinite elastic dielectric medium is first given, which shows that classical Eshelby 's elastic solution is modified by the presence of electric-elastic interaction. The overall macroscopic constitutive relations and their overall macroscopic material parameters accounting for electroelastic interaction effect are then derived for the elastic dielectric composites. Some quantitative calculations on the problems with statistical anisotropy, the shape effect and the electric-elastic interaction are finally given for dilute composites.

The Effect of γ-Radiations on Dielectric Properties of Composite Materials PE + x vol% TlGaSe₂

The purpose of the paper is to study the effect of gamma irradiation on the temperature dependence of the dielectric constant and dielectric loss (tanδ) of composite materials PE + x vol% (0≤ x ≤ 10). Measurements are carried out with an alternating current at a frequency of 1 kHz using the measuring bridge E-20. Measurements are carried out at temperature range 300 - 450 K, irradiated at doses of 50, 100 and 150 kGy. It is revealed that in all irradiated samples with increasing volumetric filler content increase the dielectric characteristics of composites PE + x vol%. TlGaSe2. Temperature variation of the dielectric parameters, after gamma irradiation are the result of occurring in the electron-ion and polarization at the interface of the matrix polymer with filler of TlGaSe2.

Flash Lamp Annealing Method for Improving Adhesion Strength on the Dielectric Material and Reducing Substrate Warpage

Today’s electronic devices have required higher performance properties for 5G and artificial intelligence(AI).High-performance system on chip(SOC),graphic processing unit(GPU),and central processing unit(CPU)requires advanced packages to meet demands for performance,size,and high-speed transmission.To respond to these demands,integration approaches such as 3D IC chip stacking,package on package(PoP),2.5D interposer integration,system-in-package(SiP),and fan-out packaging technologies have emerged[6,8,11,12].Therefore,the package substrate for high-performance device will require low transmission loss and the small package warpage.Low loss materials have limitation of seed layer formation with electroless Cu plating.Also,heat treatment has major impact on substrate warpage in order for growth of plated Cu metal and curing for epoxy mold compound(EMC)process.In this paper,we believe it is possible to create a seed layer on the low-loss material by combining electroless Cu plating and flash lamp annealing(FLA)method instead of sputtering process.In terms of warpage control and metal growth,the flash lamp treatment,not the conventional convection or hot plate type heat treatment,could improve electro-migration between metal line and line through improving large number of(111)slip directions.In addition,flash lamp not only provides alternative to conventional heat treatment process but also significantly reduces substrate warpage.Through result of this study,by using FLA method for advanced package,it is possible to provide solutions in improving adhesion strength between dielectric materials and deposited metal film,and to reduce the warpage of the substrate.

High dielectric constant materials and their application to IC gate stack systems

High dielectric constant (high-k) materials are vital to the nanoelectronic devices. The paper reviews research development of high-k materials, describes a variety of manufacture technologies and discusses the application of the gate stack systems to non-classical device structures.