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Effective electromechanical coupling coefficient of high-overtone bulk acoustic resonator 被引量:2
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作者 LI Jian WANG Chenghao LIU Mengwei 《Chinese Journal of Acoustics》 CSCD 2017年第1期1-17,共17页
A high-overtone bulk acoustic resonator (HBAR) is composed of a substrate, a piezoelectric film and upper and lower electrodes, the influences of their structure parameter (thickness) and performance parameter (c... A high-overtone bulk acoustic resonator (HBAR) is composed of a substrate, a piezoelectric film and upper and lower electrodes, the influences of their structure parameter (thickness) and performance parameter (characteristic impedance) on effective electromechani- cal coupling coefficient K^2eff are investigated systematically. The relationship between K^2eff and these parameters is obtained by a lumped parameter equivalent circuit instead of distributed parameter equivalent circuit near the resonant frequency, and K^2eff at the resonance frequency closest to the given frequency is analyzed. The results show that K^2eff declines rapidly and oscillatorily with the continuous increase of the substrate thickness when the piezoelectric film thickness is fixed, and decreases inversely proportion to the thickness when the substrate thick-ness is greater than a certain value. With the ratio of the characteristic impedance of the substrate to the piezoelectric layer increasing, the maximum of K^2eff obtained from the vari- ation curve of K^2eff with the continuous increase of the piezoelectric film thickness decreases rapidly before reaching the minimum value, and later increases slowly. Fused silica with low impedance is appropriate as the substrate of HBAR to get a larger K^2eff. Compared with Al electrode, Au electrode can obtain larger K^2eff when the appropriate electrode thickness is selected. The revealed laws above mentioned provide the theoretical basis for optimizing parameters of HBAR. 展开更多
关键词 ZnO Effective electromechanical coupling coefficient of high-overtone bulk acoustic resonator high
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Mechanical quality factor of high-overtone bulk acoustic resonator 被引量:2
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作者 LI Jian LIU Mengwei +2 位作者 LI Junhong MA Jun WANG Chenghao 《Chinese Journal of Acoustics》 CSCD 2016年第3期193-211,共19页
Mechanical quality factor Qm is a key characteristic parameter of High-overtone bulk acoustic resonator(HBAR). The effects of structure parameter(thickness) and perfor?mance parameters(characteristic impedance a... Mechanical quality factor Qm is a key characteristic parameter of High-overtone bulk acoustic resonator(HBAR). The effects of structure parameter(thickness) and perfor?mance parameters(characteristic impedance and mechanical attenuation factor) of substrate,piezoelectric film and electrode constituting HBAR on Qm are carried out. The relationships between Qm and these parameters are obtained by a lumped parameter equivalent circuit instead of distributed parameter equivalent circuit near the resonance frequency, and the an?alytical expressions oi Qm are given. The results show that Qm increases non-monotonically with the continuous increase of the substrate thickness for HBAR with certain piezoelectric film thickness, and it approaches to the substrate material mechanical quality factor as the substrate thickness is large. Qm decreases wavily with the continuous increase of the piezoelectric film thickness for HBAR with certain substrate thickness. Sapphire and YAG with low mechanical loss are appropriate as the substrate to get a larger Qm- The electrode loss must be considered since it can reduce Qm- Compared with Au electrode, A1 electrode with lower loss can obtain higher Qm when the appropriate electrode thickness is selected. In addition, Qm decreases with the increase of frequency. These results provide the theoretical basis for optimizing the parameters of HBAR and show that trade-oflFs between Qm and must be considered in the design because their changes are often inconsistent. 展开更多
关键词 Mechanical quality factor of high-overtone bulk acoustic resonator HIGH
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基于HBAR的X波段低相噪频率合成方法 被引量:4
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作者 穆晓华 沈文渊 《压电与声光》 CAS CSCD 北大核心 2015年第6期923-925,共3页
基于高次谐波体声波谐振器(HBAR)的高Q值梳谱信号产生的特性提出了一种低相位噪声频率合成方法。该文根据HBAR的工作原理,采用HBAR与声表滤波器级联的方法共同构成低噪声振荡环路直接产生S波段信号,然后通过四倍频模块输出X波段频率信... 基于高次谐波体声波谐振器(HBAR)的高Q值梳谱信号产生的特性提出了一种低相位噪声频率合成方法。该文根据HBAR的工作原理,采用HBAR与声表滤波器级联的方法共同构成低噪声振荡环路直接产生S波段信号,然后通过四倍频模块输出X波段频率信号。采用HBAR与声表滤波器串联的方式提高了带外频响抑制,输出的2.2GHz信号的相位噪声达-118.9dBc/Hz@1kHz,四倍频后得到的X波段信号8.8GHz的相噪达到-107.4dBc/Hz@1kHz。 展开更多
关键词 hbar 声学梳谱 相位噪声 微波
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掺钪AlN材料特性及HBAR器件性能研究 被引量:1
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作者 朱宇波 母志强 +3 位作者 陈玲丽 朱雷 李卫民 俞文杰 《压电与声光》 CAS 北大核心 2022年第2期299-303,309,共6页
该文基于掺钪AlN薄膜制备了高次谐波体声波谐振器(HBAR),研究了钪(Sc)掺杂浓度对AlN压电薄膜材料特性及器件性能的影响。研究表明,当掺入Sc的摩尔分数从0增加到25%时,压电应力系数e_(33)增加、刚度C^(D)_(33)下降,导致Al_(1-x)Sc_(x) N... 该文基于掺钪AlN薄膜制备了高次谐波体声波谐振器(HBAR),研究了钪(Sc)掺杂浓度对AlN压电薄膜材料特性及器件性能的影响。研究表明,当掺入Sc的摩尔分数从0增加到25%时,压电应力系数e_(33)增加、刚度C^(D)_(33)下降,导致Al_(1-x)Sc_(x) N压电薄膜的机电耦合系数k^(2)_(t)从5.6%提升至15.8%,从而使HBAR器件的有效机电耦合系数(k^(2)_(eff))提升了3倍。同时,当Sc掺杂摩尔分数达25%时,Al_(1-x)Sc_(x) N(x为Sc掺杂摩尔分数)压电薄膜的声速下降13%,声学损耗提高,导致HBAR器件的谐振频率和品质因数降低。 展开更多
关键词 高次谐波体声波谐振器(hbar) ALN 压电薄膜 掺钪AlN 机电耦合系数
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