GaN based ultraviolet laser diodes

In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.

Efficient and high-power laser-diode single-end-pumped Nd：YVO4 continuous wave laser at 1342nm

A compact, efficient and high-power laser diode （LD） single-end-pumped Nd：YVO4 laser with continuous-wave emission at 1342 nm is reported. With a single crystal single-end-pumped by fibre-coupled LD array, an output power of 7.36W is obtained from the laser cavity of concave-convex shape, corresponding to an optical-to-optical efficiency of 32.8%. The laser is operated in TEM00 mode with small rms amplitude noise of 0.3%. The influences of the Nd concentration, transmissivity of the output mirror and the cavity length on the output power have been studied experimentally.

High-Power Continuous-Wave and Acousto-Optical Q-Switched Ho:(Sc_(0.5)Y_(0.5))_2SiO_5 Laser Pumped by Laser Diode

We experimentally investigate the continuous-wave(cw)and acousto-optical(AO)Q-switched performance of a diode-pumped Ho:(Sc_(0.5)Y_(0.5))_2SiO_5(Ho:SYSO)laser.A fiber-coupled laser diode at 1.91m is employed as the pump source.The cw Ho:SYSO laser produces 13.0 W output power at 2097.9 nm and 56.0%slope efficiency with respect to the absorbed pump power.In the AO Q-switched regime,at a pulse repetition frequency of 5 kHz,the Ho:SYSO laser yields 2.1 mJ pulse energy and 21 ns pulse width,resulting in a calculated peak power of 100 k W.In addition,at the maximum output level,the beam quality factor of the Q-switched Ho:SYSO laser is measured to be about 1.6.

Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes

Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800- 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback （DFB） laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.

High-power and high optical conversion efficiency diode-end-pumped laser with multi-segmented Nd：YAG/Nd：YVO-4

A novel flat-flat resonator consisting of two crystals（Nd：YAG ＋ Nd：YVO4） is established for power scaling in a diode-end-pumped solid-state laser. We systematically compare laser characteristics between multi-segmented（Nd：YAG ＋ Nd：YVO4） and conventional composite（Nd：YAG ＋ Nd：YAG） crystals to demonstrate the feasibility of spectral line matching for output power scale-up in end-pumped lasers. A maximum continuous-wave output power of 79.2 W is reported at 1064 nm, with Mx2= 4.82, My2= 5.48, and a pumping power of 136 W in the multi-segmented crystals（Nd：YAG ＋ Nd：YVO4）. Compared to conventional composite crystals（Nd：YAG ＋ Nd：YAG）, the optical-optical conversion efficiency of multi-segmented crystals（Nd：YAG ＋ Nd：YVO4） from 808 nm to 1064 nm is enhanced from 30% to 58.8%,while the laser output sensitivity as affected by the diode-laser temperature is reduced from 55% to 9%.

An injection-locking diode laser at 671 nm with a wide tuning range up to 6 GHz

We present a compact injection-locking diode laser module to generate 671 nm laser light with a high output power up to 150 m W.The module adopts a master-slave injection-locking scheme,and the injection-locking state is monitored using the transmission spectrum from a Fabry-Perot interferometer.Beat frequency spectrum measurement shows that the injection-locked slave laser has no other frequency components within the 150-MHz detection bandwidth.It is found that without additional electronic feedback,the slave laser can follow the master laser over a wide range of 6 GHz.All the elements of the module are commercially available,which favors fast construction of a complete 671-nm laser system for the preparation of cold^(6)Li atoms with only one research-grade diode laser as the seeding source.

Theoretical Modeling of Luminous Efficacy for High-Power White Light-Emitting Diodes

The photometric characteristics of high-power white light-emitting diode （LED） devices are investigated. A theoretical model for the luminous efficacy o[ high-power white LED devices and LED systems is proposed. With the proposed theoretical model, the mechanism of the luminous efficacy decrease is explained. Meanwhile, the model can be used to estimate the luminous efficacy oF LEDs under general operation conditions, such as different operation temperatures and injection currents. The wide validity of the luminous efficacy model is experimentally verified through the measurements of different types of LEDs. The experimental results demonstrate a high estimation accuracy. The proposed models not only can be applied to estimate the LED photometric performance, but also is helpful for reliability research of LEDs.

Influence of laser intensity in second-harmonic detection with tunable diode laser multi-pass absorption spectroscopy

Tunable diode laser absorption spectroscopy （TDLAS） has been widely employed in atmospheric trace gases detection. The ratio of the second-harmonic signal to the intensity of laser beam incident to the multi-pass cell is proved to be proportional to the product of the path length and the gas concentration under any condition. A new calibration method based on this relation in TDLAS system for the measurement of trace gas concentration is proposed for the first time. The detection limit and the sensitivity of the system are below 110 and 31ppbv （parts-per-billion in volume）, respectively.

Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000h

GaN-based continuous-wave operated blue-violet laser diodes(LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm^2 ridge waveguide structure.The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature(25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively.In addition, the threshold current density and voltage are as small as 1.46 kA/cm^2 and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation.

Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes

The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.

Diode Laser Soldering Technology of Fine Pitch QFP Devices

The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with Sn-Ag-Cu lead-free solder and Sn-Pb solder respectively,and the mechanical properties of micro-joints of the QFP devices were tested and studied by STR-1000 micro-joints tester.The results indicate that sound QFP micro-joints without bridging or solder ball are gained by means of diode laser soldering method with appropriate laser processing parameters,and the pitch of the QFP devices is as fine as to 0.4mm.Tensile strength of QFP micro-joints increases gradually with the increase of laser output power,the maximum tensile strength presents when the laser output power increase to a certain value.The results also indicate that the mechanical properties of QFP micro-joints soldered by diode laser soldering system are better than those of QFP micro-joints soldered by IR reflow soldering method.The experimental results may provide a theory guide for investigation of diode laser soldering.

A remote sensing system of vehicle emissions based on tunable diode laser technology

As being an effective real-time method of monitoring vehicle emissions on-road, a remote sensing system based on the tunable diode laser （TDL） technology was presented, and the key technologies were discussed. A field test in Guangzhou（Guangdong, China） was performed and was found that the factors, such as slope, instantaneous speed and acceleration, had significant influence on the detectable rate of the system. Based on the results, the proposal choice of testing site was presented.

Experimental Study of Nd^(3+):KGd(WO_(4))_(2) Laser Pumped by Laser Diode

This paper presents the cw output characteristics of Nd^(3+):KGd(WO_(4))_(2)(KGW)laser crystal with different NcP+concentration grown in our laboratory.The laser output at 1.067 μm of KGW crystal(3×3×6 mm)was obtained to be 68.9 mW and the slope efficiency reached 28.8%when pumped by laser diode of power 305 mW at 807 nm.

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition(MOCVD),and the width and length of the ridge waveguide structure are 30 and 1200μm,respectively.The threshold current is about 400 mA,and corresponding threshold current density is 1.1 kA/cm2.

Diode-pumped wavelength-switchable visible Pr^(3+):YLF laser and vortex laser around 670 nm

Here we developed a novel wavelength-switchable visible continuous-wave(CW)Pr^(3+):YLF laser around 670 nm.In single-wavelength laser operations,the maximum output powers of 2.60 W,1.26 W,and 0.21 W,the maximum slope efficiencies of 34.7%,27.3%,and 12.3%were achieved with good beam qualities(M^(2)<1.6)at 670.4 nm,674.2 nm,and 678.9 nm,respectively.Record-high output power(2.6 W)and record-high slope efficiency(34.7%)were achieved for the Pr^(3+):YLF laser operation at 670.4 nm.This is also the first demonstration of longer-wavelength peaks beyond 670 nm in the^(3)P_(1)→^(3)F_(3)transition of Pr^(3+):YLF.In multi-wavelength laser operations,the dual-wavelength lasings,including 670.1/674.8 nm,670.1/679.1 nm,and 675.0/679.4 nm,were obtained by fine adjustment of one/two etalons within the cavity.Furthermore,the triple-wavelength lasings,e.g.672.2/674.2/678.6 nm and 670.4/674.8/679.4 nm,were successfully demonstrated.Moreover,both the first-order vortex lasers(LG_(0)^(+1)and LG_(0)^(-1)modes)at 670.4 nm were obtained by off-axis pumping.

Broad bandwidth interference filter-stabilized external cavity diode laser with narrow linewidth below 100kHz

Interference filter-stabilized external cavity diode lasers （ECDLs） have properties of simple configurations, high sta- bilities, and narrow linewidths. However, the interference filter used in common ECDL designs requires an ultra-narrow bandwidth （about 0.3 nm） to achieve mode selection, that is considerably expensive and not yet available for a wide range of wavelengths. In this paper, a robust ECDL using an available broad bandwidth （about 4 nm） interference filter as the wavelength discriminator is constructed and tested. The ECDL demonstrated a narrow Lorentzian fitted linewidth of 95 kHz and a spectral purity of 2.9 MHz. The long-term frequency stability of the ECDL reaches 5.59 x 10 12.

Diode laser using narrow bandwidth interference filter at 852 nm and its application in Faraday anomalous dispersion optical filter

We demonstrate an 852-nm external cavity diode laser（ECDL） system whose wavelength is mainly determined by an interference filter instead of other wavelength selective elements. The Lorentzian linewidth measured by the heterodyne beating between two identical lasers is 28.3 k Hz. Moreover, we test the application of the ECDL in the Faraday atomic filter.Besides saturated absorption spectrum, the transmission spectrum of the Faraday atomic filter at 852 nm is measured by using the ECDL. This interference filter ECDL method can also be extended to other wavelengths and widen the application range of diode laser.

Arbitrary frequency stabilization of a diode laser based on visual Labview PID VI and sound card output

We report a robust method of directly stabilizing a grating feedback diode laser to an arbitrary frequency in a large range. The error signal, induced from the difference between the frequency measured by a wavelength meter and the preset target frequency, is fed back to the piezoelectric transducer module of the diode laser via a sound card in the computer. A visual Labview procedure is developed to realize a feedback system. In our experiment the frequency drift of the diode laser is reduced to 8 MHz within 25 min. The robust scheme can be adapted to realize the arbitrary frequency stabilization for many other kinds of lasers.

Thermal analysis of GaN laser diodes in a package structure

Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.

Ⅲ-nitride based ultraviolet laser diodes

In recent years,because of their small size,high efficiency and environment-friendly advantages,Ⅲ-nitride based ultraviolet(UV)light-emitting diodes(LEDs)have been widely used in many areas to substitute for mercury lamps,such as in 3D printing,curing and sterilization.Ⅲ-nitride alloys cover the whole UV spectrum which is comprised of UV-A(320–400 nm),UV-B(280–320 nm)and UV-C(200–280 nm)by controlling Al/Ga/In content.In addition,Ⅲ-nitride based UV laser diodes(LDs)also have some potential applications in the case of high-power-density,narrow-spectrum,good-directional lighting.However,Ⅲ-nitride based UV laser diodes still have many challenges such as poor crystal quality and low hole concentration in p-type AlGaN.