Analysis of high-power disk laser welding stability based on classification of plume and spatter characteristics

Classification of plume and spatter images was studied to evaluate the welding stability. A high-speed camera was used to capture the instantaneous images of plume and spatters during high power disk laser welding. Characteristic parameters such as the area and number of spatters, the average grayscale of a spatter image, the entropy of a spatter grayscale image, the coordinate ratio of the plume centroid and the welding point, the polar coordinates of the plume centroid were defined and extracted. Karhunen-Loeve transform method was used to change the seven characteristics into three primary characteristics to reduce the dimensions. Also, K-nearest neighbor method was used to classify the plume and spatter images into two categories such as good and poor welding quality. The results show that plume and spatter have a close relationship with the welding stability, and two categories could be recognized effectively using K-nearest neighbor method based on Karhunen-Loeve transform.

Wavelength-tunable organic semiconductor lasers based on elastic distributed feedback gratings

Wavelength-tunable organic semiconductor lasers based on mechanically stretchable polydimethylsiloxane (PDMS) gratings were developed. The intrinsic stretchability of PDMS was explored to modulate the period of the distributed feedback gratings for fine tuning the lasing wavelength. Notably, elastic lasers based on three typical light-emitting molecules show com-parable lasing threshold values analogous to rigid devices and a continuous wavelength tunability of about 10 nm by mechanic-al stretching. In addition, the stretchability provides a simple solution for dynamically tuning the lasing wavelength in a spec-tral range that is challenging to achieve for inorganic counterparts. Our work has provided a simple and efficient method of fab-ricating tunable organic lasers that depend on stretchable distributed feedback gratings, demonstrating a significant step in the advancement of flexible organic optoelectronic devices.

High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0 μm with Very Small Lateral Beam Divergence

We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350？mW in continuous-wave mode at an emission wavelength around 2.0？μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.

A new method for measuring the pulse-front distortion of arbitrary shapes in high-power ultrashort laser systems

We present a new method that can be used to calculate pulse-front distortion by measuring the spectral interference of two point-diffraction fields in their overlapped district. We demonstrate, for the first time, the measurement of the pulse-front distortion of the pulse from a complex multi-pass amplification system, which exists in almost all high-power laser systems, and obtain the irregular pulse-front distribution. The method presented does not need any reference light or assumption about the pulse-front distribution, and has an accuracy of several femtoseconds.

High-Power Passively Q-Switched Nd:YAG Laser at 1112 nm with a Cr^(4+):YAG Saturable Absorber

A high-power passively Q-switched Nd：YAG laser operating at lll2nm with Cr4＋：yAO as a saturable absorber is demonstrated. Under 808 nm diode-direct pumping, the maximum average output power of 2.73 W is achieved at the pump power of 16.65 W, corresponding to an optical-to-optical conversion efficiency of 16.4%. At the same time, the pulse width, pulse repetition rate, single pulse energy and peak power are 27.2ns, 9 kHz, 303.3#3 and 11.2kW, respectively. As far as we know, the result gives the highest average output power at 1112nm generated by an 808 nm diode-end-pumped Nd：YAG laser.

Elucidation of Metallic Plume and Spatter Characteristics Based on SVM During High-Power Disk Laser Welding

During deep penetration laser welding,there exist plume（weak plasma） and spatters,which are the results of weld material ejection due to strong laser heating.The characteristics of plume and spatters are related to welding stability and quality.Characteristics of metallic plume and spatters were investigated during high-power disk laser bead-on-plate welding of Type 304 austenitic stainless steel plates at a continuous wave laser power of 10 kW.An ultraviolet and visible sensitive high-speed camera was used to capture the metallic plume and spatter images.Plume area,laser beam path through the plume,swing angle,distance between laser beam focus and plume image centroid,abscissa of plume centroid and spatter numbers are defined as eigenvalues,and the weld bead width was used as a characteristic parameter that reflected welding stability.Welding status was distinguished by SVM（support vector machine） after data normalization and characteristic analysis.Also,PCA（principal components analysis） feature extraction was used to reduce the dimensions of feature space,and PSO（particle swarm optimization） was used to optimize the parameters of SVM.Finally a classification model based on SVM was established to estimate the weld bead width and welding stability.Experimental results show that the established algorithm based on SVM could effectively distinguish the variation of weld bead width,thus providing an experimental example of monitoring high-power disk laser welding quality.

Numerical Simulation of External-Cavity Distributed Feedback Semiconductor Laser

We propose a theoretical model to describe external-cavity distributed feedback semiconductor lasers and investigate the impact of the number of external feedback points on linewidth and side-mode suppression ratio through numerical simulation. The simulation results demonstrate that the linewidth of external-cavity semiconductor lasers can be reduced by increasing the external cavity length and feedback ratio, and adding more external feedback points can further narrow the linewidth and enhance the side mode suppression ratio. This research provides insight into the external cavity distributed feedback mechanism and can guide the design of high-performance external cavity semiconductor lasers. .

High-Power Continuous-Wave and Acousto-Optical Q-Switched Ho:(Sc_(0.5)Y_(0.5))_2SiO_5 Laser Pumped by Laser Diode

We experimentally investigate the continuous-wave(cw)and acousto-optical(AO)Q-switched performance of a diode-pumped Ho:(Sc_(0.5)Y_(0.5))_2SiO_5(Ho:SYSO)laser.A fiber-coupled laser diode at 1.91m is employed as the pump source.The cw Ho:SYSO laser produces 13.0 W output power at 2097.9 nm and 56.0%slope efficiency with respect to the absorbed pump power.In the AO Q-switched regime,at a pulse repetition frequency of 5 kHz,the Ho:SYSO laser yields 2.1 mJ pulse energy and 21 ns pulse width,resulting in a calculated peak power of 100 k W.In addition,at the maximum output level,the beam quality factor of the Q-switched Ho:SYSO laser is measured to be about 1.6.

Formation of choroidal neovascularization under macular fovea after high-power laser irradiation: a case report

Dear Editor,I am Dr.Shan-Shan Li,from Northern Jiangsu People’s Hospital,Yangzhou,China.I write to present the case of formation of choroidal neovascularization(CNV)under the fovea after high-power laser irradiation.Currently,there is an increasing availability and accessibility to laser instruments,but improper use of these tools can lead to macular damage and irreversible visual impairment.

An accurate and stable method of array element tiling for high-power laser facilities

Due to laser-induced damage, the aperture of optics is one of the main factors limiting the output capability of highpower laser facilities. Because of the general difficulty in achieving large-aperture optics, an alternative solution is to tile some small-aperture ones together. We propose an accurate, stable, and automatic method of array element tiling and verify it on a double-pass 1 × 2 tiled-grating compressor in the XG-III laser facility. The test results show the accuracy and stability of the method. This research provides an efficient way to obtain large-aperture optics for high-power laser facilities.

High-Power Dual-End-Pumped Actively Q-Switched Ho:YAG Ceramic Laser

We present a high-power Ho：YAG ceramic laser pumped at 1908nm. Using a dual-end-pumped structure, the maximum continuous-wave output power of 48 W is obtained, corresponding to a slope efficiency of 70.4% with respect to the absorbed pump power. At actively Q-switched mode, the maximum average output power of 46 W and the minimum pulse width of 21 ns are achieved at a pulse repetition frequency of 20 kHz, corresponding to a peak power of approximately 109.5kW. In addition, the beam-quality M2 factor is found to be 1.4 at the maximum output power.

High-Power Continuous-Wave Nd:GdVO4 Solid-State Laser Dual-End-Pumped at 880 nm

A high-power cw all-solid-state Nd：GdVO4 laser operating at 88Onto is reported. The laser consists of a low doped level Nd：GdV04 crystal dual-end-pumped by two high-power diode lasers and a compact negative confocM unstable-stable hybrid resonator. At an incident pump power of 820 W, a maximum cw output of 240 W at 1064nm is obtained. The optical-to-optical efficiency and Mope efficiency are 40.7% and 53.2%, respectively. The M2 factors in the unstable direction and in the stable direction are 4.38 and 5.44, respectively.

High-Power and High-Efficiency Operation of Terahertz Quantum Cascade Lasers at 3.3 THz

A high-power and high-effciency GaAs/A1GaAs-based terahertz （THz） quantum cascade laser structure emitting at 3.3 THz is presented. The structure is based on a hybrid bound-to-continuum transition and resonant-phonon extraction active region combined with a semi-insulating surface-plasmon waveguide. By optimizing material structure and device processing, the peak optical output power of 758mW with a threshold current density of 120 A/cm2 and a wall-plug effciency of 0.92% at 10K and 404mW at 77K are obtained in pulsed operation. The maximum operating temperature is as high as llS K. In the cw mode, a record optical output power of 160roW with a threshold current density of 178A/cm2 and a wall-plug efficiency of 1.32% is achieved at 1OK.

Modeling analysis and optimization design of the thermostatical control system of laser instrument of the semiconductor

Influence produced by the heat effect at work of the laser instrument crystal of the semiconductor, the text designs a kind of temperature control system to the crystal of the laser instrument, using the thought and method of the classical control theory to analyze this temperature control system, and establishes mathematics model. According to mathematics model the text demonstrated the system at S field and time- area, and proposed optimizing basis to the total mark of proportion and differential parameter to con- troller PID, thus proposed a kind of temperature control scheme. And the thermostatically system is simulated by MATLAB.

Random pinhole attenuator for high-power laser beams

The intensity attenuation of a high-power laser is a frequent task in the measurements of optical science.Laser intensity can be attenuated by inserting an optical element,such as a partial reflector,polarizer or absorption filter.These devices are,however,not always easily applicable,especially in the case of ultra-high-power lasers,because they can alter the characteristics of a laser beam or become easily damaged.In this study,we demonstrated that the intensity of a laser beam could be effectively attenuated using a random pinhole attenuator(RPA),a device with randomly distributed pinholes,without changing the beam properties.With this device,a multi-PW laser beam was successfully attenuated and the focused beam profile was measured without any alterations of its characteristics.In addition,it was confirmed that the temporal profile of a laser pulse,including the spectral phase,was preserved.Consequently,the RPA possesses significant potential for a wide range of applications.

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability.Over the past several years,benefitting from the sustainable innovations in laser technology and the significant progress in materials technology,megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices.Here,we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode,including the mechanism,system architecture,critical technology,and experimental demonstration of the proposed high-power photonic microwave sources.The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Pérot Semiconductor Lasers

A fitting process is used to measure the cavity loss and the quasi Fermi level separation for Fabry Pérot semiconductor lasers.From the amplified spontaneous emission (ASE) spectrum,the gain spectrum and single pass ASE obtained by the Cassidy method are applied in the fitting process.For a 1550nm quantum well InGaAsP ridge waveguide laser,the cavity loss of about ～24cm -1 is obtained.

Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode

We solve the single mode coupled rate equations by computer,simulate the behavior of a gain switch of an AlGaInP red light semiconductor laser diode,and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.

Tunable and broadband microwave frequency combs based on a semiconductor laser with incoherent optical feedback

Based on a semiconductor laser （SL） with incoherent optical feedback, a novel all-optical scheme for generating tunable and broadband microwave frequency combs （MFCs） is proposed and investigated numerically. The results show that, under suitable operation parameters, the SL with incoherent optical feedback can be driven to operate at a regular pulsing state, and the generated MFCs have bandwidths broader than 40 GHz within a 10 dB amplitude variation. For a fixed bias current, the line spacing （or repetition frequency） of the MFCs can be easily tuned by varying the feedback delay time and the feedback strength, and the tuning range of the line spacing increases with the increase in the bias current. The linewidth of the MFCs is sensitive to the variation of the feedback delay time and the feedback strength, and a linewidth of tens of KHz can be achieved through finely adjusting the feedback delay time and the feedback strength. In addition, mappings of amplitude variation, repetition frequency, and linewidth of MFCs in the parameter space of the feedback delay time and the feedback strength are presented.

Chaos synchronization in injection-locked semiconductor lasers with optical feedback

Based on the rate equations, we have investigated three types of chaos synchronizations in injection-locked semiconductor lasers with optical feedback. Numerical simulation shows that the synchronization can be realized by the symmetric or asymmetric laser systems. Also, the influence of parameter mismatches on chaos synchronization is investigated, and the results imply that these two lasers can achieve good synchronization, with smaller tolerance of parameter mismatch existing.