Twist-angle two-dimensional superlattices and their application in(opto)electronics

Twist-angle two-dimensional systems,such as twisted bilayer graphene,twisted bilayer transition metal dichalcogenides,twisted bilayer phosphorene and their multilayer van der Waals heterostructures,exhibit novel and tunable properties due to the formation of Moirésuperlattice and modulated Moirébands.The review presents a brief venation on the development of"twistronics"and subsequent applications based on band engineering by twisting.Theoretical predictions followed by experimental realization of magic-angle bilayer graphene ignited the flame of investigation on the new freedom degree,twistangle,to adjust(opto)electrical behaviors.Then,the merging of Dirac cones and the presence of flat bands gave rise to enhanced light-matter interaction and gate-dependent electrical phases,respectively,leading to applications in photodetectors and superconductor electronic devices.At the same time,the increasing amount of theoretical simulation on extended twisted 2D materials like TMDs and BPs called for further experimental verification.Finally,recently discovered properties in twisted bilayer h-BN evidenced h-BN could be an ideal candidate for dielectric and ferroelectric devices.Hence,both the predictions and confirmed properties imply twist-angle two-dimensional superlattice is a group of promising candidates for next-generation(opto)electronics.

Emerging properties of two-dimensional twisted bilayer materials

Recent studies in van der Waals coupled two-dimensional(2D) bilayer materials have demonstrated a new freedom for material engineering by the formation of moiré pattern. By tuning the twist angle between two layers, one can modulate their electronic band structures and therefore the associated electrical transport and optical properties, which are distinct from the original ones of each individual layer. These new properties excite great passion in the exploration of new quantum states and possible applications of 2D bilayers. In this article, we will mainly review the prevailing fabrication methods and emerging physical properties of twisted bilayer materials and lastly give out a perspective of this topic.

Strong circularly polarized luminescence from quantum dots/2D chiral perovskites composites

Chiral perovskites(CPs)have attracted enormous attentions since they have combined chirality and optoelectrical properties well which is promising in circularly polarized luminescence(CPL)application and of great importance for future spin-optoelectronics.However,there is a key contradiction that in chiral perovskites chirality distorts the crystal structure,leading to poor photoluminescence(PL)properties.Achieving the balance between chirality and PL is a major challenge for strong CPL from chiral perovskites.Differently,two-dimensional(2D)chiral perovskite has shown fascinating chiral induced spin selectivity(CISS)effect which can act as spin injector under ambient conditions.Here,we propose an effective strategy to achieve high CPL activity generated from quantum dots(QDs)by introducing 2D chiral perovskite as a chiral source,providing spin polarized carriers through the CISS effect.The as-synthesized QDs/CP composites exhibit dissymmetry factors(glum)up to 9.06×10^(−3).For the first time,we performed grazing incident wide angle X-ray scattering(GIWAXS)measurements,showing the chirality originates from the distorted lattices caused by the large chiral organic cations.Besides,time-resolved PL(TR-PL)measurements verify the enhanced CPL activity should be attributed to the charge transport between two components.These findings provide a useful method to achieve CPL in QDs/2D chiral perovskite heterojunctions which could be promising in spinoptoelectronics application.

Joint frequency, 2D AOA and polarization estimation using fourth-order cumulants

Based on fourth-order cumulant and ESPRIT algorithm, a novel joint frequency, two-dimensional angle of arrival (2D AOA) and the polarization estimation method of incoming multiple independent spatial narrow-band non-Gaussian signals in arbitrary Gaussian noise environment are proposed . The array is composed of crossed dipoles parallel to the coordinate axes. The crossed dipole positions are arbitrarily distributed. Computer simulation confirms its feasibility.

Joint frequency,2-D AOA and polarization estimation in broad-band

Based on nonuniformly spaced L-shape array, a novel algorithm using ESPRIT and inte-ger search is proposed to estimate the frequency, two-dimensional angles of arrival (2-D AOA) and polarizations of incoming multiple independent spatial narrow-band signals. The L-shape array is com-posed of crossed dipoles that are paralleled to the coordinate axis. Computer simulation confirms its availability.

Controlling exciton-exciton annihilation in WSe_(2) bilayers via interlayer twist

The twist angle between two van der Waals coupled monolayers has emerged as a new and powerful degree of freedom for engineering physical properties of semiconductor homo-and hetero-bilayers.While the interlayer twist has shown prominent effect on electronic and optical properties of transition metal dichalcogenide(TMD)bilayers,it remains unclear how it could be used to manipulate the exciton dynamics,especially exciton-exciton annihilation(EEA)process which is the dominant energy loss channel in TMDs under moderate to high exciton density due to strong Coulomb interaction.Herein,we show that the twist angle in TMD bilayers can act as an effective knob to control the EEA process.Specifically,EEA rate constant increases from 1° twisted WSe_(2) bilayers(0.026 cm^(2)/s)by more than twice to 32° twisted bilayers(0.053 cm2/s)and then drops again in 60° twisted bilayers(0.019 cm^(2)/s).This twist-angle dependence can be attributed to the energy difference between indirect and direct excitons arising from the interlayer interaction.Our work opens up the possibility of artificially managing the exciton dynamics in TMD materials for optoelectronic applications via interlayer twist angle.