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The Discovery of Deep High-Resistivity Block and Inadequately Consolidated Magma Chambers in Gaoligongshan Oblique Collisional Orogen and its Tectonic Implications
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作者 YU Nian WANG Xuben +3 位作者 HU Xiangyun LI Dewei DENG Fangjin CAI Xuelin 《Acta Geologica Sinica(English Edition)》 SCIE CAS CSCD 2017年第3期1161-1162,共2页
Objective The Gaoligongshan oblique collisional orogen is located in the southern section of the Hengduan Mountains, and belongs to one of the main Late Yanshanian-Himalayan oblique collisional orogens in the Sanjiang... Objective The Gaoligongshan oblique collisional orogen is located in the southern section of the Hengduan Mountains, and belongs to one of the main Late Yanshanian-Himalayan oblique collisional orogens in the Sanjiang area. Many researchers have studied the geology, geochemistry and geophysics of this region, and many research achievements have been obtained from deep geophysical exploration of the region, especially using the magnetotelluric (MT) sounding technique. However, 展开更多
关键词 of is on The Discovery of Deep high-resistivity Block and Inadequately Consolidated Magma Chambers in Gaoligongshan Oblique Collisional Orogen and its Tectonic Implications in that
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Design of MEMS C-Band Microstrip Antenna Array Based on High-Resistance Silicon for Intelligent Ammunition
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作者 Xue Zhao Xiao-Ming Liu 《Journal of Electronic Science and Technology》 CAS 2013年第1期101-105,共5页
In recent years, microstrip antennas have been more widely applied in satellite communications, mobile phones, unmanned aerial vehicle (UAV), and weapons. A micro-electro-mechanical systems-based (MEMS-based) high... In recent years, microstrip antennas have been more widely applied in satellite communications, mobile phones, unmanned aerial vehicle (UAV), and weapons. A micro-electro-mechanical systems-based (MEMS-based) high-resistance silicon C-band microstrip antenna array has been designed for the intelligent ammunition. The center frequency is 4.5 GHz. A cavity has been designed in substrate to reduce the dielectric constant of silicon and high-resistance silicon has been used as the material of substrate to improve the gain of antenna. It is very easy to be manufactured by using MEMS technology because of the improved structure of the antenna. The results show that the gain of the antenna is 8 dB and voltage standing wave ratio (VSWR) is less than 2 by the analysis and simulation in high freauencv structure simulator (HFSS). 展开更多
关键词 C-BAND high frequency structure simulator high-resistance silicon intelligent ammunition microstrip antenna array.
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Comparing High-resistance Grounding Method with Resonance Grounding Method for Large Generators
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作者 Yao Huannian Cao Meiyue(Xiamen Electric Power Administration) 《Electricity》 1997年第3期22-25,共4页
For large generators, the problem of high-resistance grounding method and the advantages of resonance, grounding method are discussed in detail, and an overall comparison is given in this paper. It is recommended that... For large generators, the problem of high-resistance grounding method and the advantages of resonance, grounding method are discussed in detail, and an overall comparison is given in this paper. It is recommended that the latter should be adopted so as to increase the operation reliability of large generators and power systems. 展开更多
关键词 HIGH Comparing high-resistance Grounding Method with Resonance Grounding Method for Large Generators
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Development and molecular analysis of a novel acetohydroxyacid synthase rapeseed mutant with high resistance to sulfonylurea herbicides 被引量:4
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作者 Yue Guo Changle Liu +5 位作者 Weihua Long Jianqin Gao Jiefu Zhang Song Chen Huiming Pu Maolong Hu 《The Crop Journal》 SCIE CSCD 2022年第1期56-66,共11页
With the increasing promotion of simplified rapeseed cultivation in recent years,the development of cultivars with high resistance to herbicides is urgently needed.We previously developed M342,which shows sulfonylurea... With the increasing promotion of simplified rapeseed cultivation in recent years,the development of cultivars with high resistance to herbicides is urgently needed.We previously developed M342,which shows sulfonylurea herbicide resistance,by targeting acetohydroxyacid synthase(AHAS),a key enzyme in branched-chain amino acid synthesis.In the present study,we used a progeny line derived from M342 for an additional round of ethyl methane sulfonate mutagenesis,yielding the novel mutant DS3,which harbored two mutations in AHAS genes and showed high sulfonylurea resistance.One mutation was the substitution Trp574 Leu,as in M342,according to Arabidopsis protein sequencing.The other site was a newly recognized substitution,Pro197 Leu.A KASP marker targeting Pro197 Leu was developed and reliably predicted the response to sulfonylurea herbicides in the F2 population.The combination of Trp574 Leu and Pro197 Leu in DS3 produced a synergistic effect that greatly increased herbicide resistance.Analysis of the protein structures of AHAS1 and AHAS3 in wild-type and single-gene mutant plants revealed three-dimensional protein conformational changes that could account for differences in herbicide resistance characteristics including toxicity tolerance,AHAS enzyme activity,and AHAS gene expression. 展开更多
关键词 Acetohydroxyacid synthase high-resistance rapeseed Additional round of mutagenesis Sulfonylurea herbicide Synergistic mutations
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Design and fabrication of miniature antenna based on silicon substrate for wireless communications
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作者 GUO XingLong JIN Yan LIU Lei OUYANG WeiXia LAI ZongSheng 《Science in China(Series F)》 2008年第5期586-591,共6页
In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon (HR-Si) by micro-electronics process. The results of simulation are consistent with results of measur... In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon (HR-Si) by micro-electronics process. The results of simulation are consistent with results of measurement for the antenna. The mode of the antenna is vertical and horizontal bidirectional radiations. The gain of antenna is 2.5 dB, and the resonance frequency approximately is 3 GHz. This fabrication can be compatible with antenna integration and CMOS process. The parameters of this antenna are for reference radar antenna system of Unmanned Aerial Vehicles (UAV), satellite transmission, and communication. 展开更多
关键词 miniature antenna high-resistivity silicon (HR-Si) IC process
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