We demonstrate binary phase shift keying(BPSK) modulation using a silicon Mach–Zehnder modulator with aπ-phase-shift voltage(Vπ) of-4.5 V.The single-drive push–pull traveling wave electrode has been optimized usin...We demonstrate binary phase shift keying(BPSK) modulation using a silicon Mach–Zehnder modulator with aπ-phase-shift voltage(Vπ) of-4.5 V.The single-drive push–pull traveling wave electrode has been optimized using numerical simulations with a 3 dB electro-optic bandwidth of 35 GHz.The 32 Gb/s BPSK constellation diagram is measured with an error vector magnitude of 18.9%.展开更多
Electro-optic modulation at frequencies of 100 GHz and beyond is important for photonic-electronic signal processing at the highest speeds.To date,however,only a small number of devices exist that can operate up to th...Electro-optic modulation at frequencies of 100 GHz and beyond is important for photonic-electronic signal processing at the highest speeds.To date,however,only a small number of devices exist that can operate up to this frequency.In this study,we demonstrate that this frequency range can be addressed by nanophotonic,silicon-based modulators.We exploit the ultrafast Pockels effect by using the silicon–organic hybrid(SOH)platform,which combines highly nonlinear organic molecules with silicon waveguides.Until now,the bandwidth of these devices was limited by the losses of the radiofrequency(RF)signal and the RC(resistor-capacitor)time constant of the silicon structure.The RF losses are overcome by using a device as short as 500 μm,and the RC time constant is decreased by using a highly conductive electron accumulation layer and an improved gate insulator.Using this method,we demonstrate for the first time an integrated silicon modulator with a 3dB bandwidth at an operating frequency beyond 100 GHz.Our results clearly indicate that the RC time constant is not a fundamental speed limitation of SOH devices at these frequencies.Our device has a voltage–length product of only V_(π)L=11 V mm,which compares favorably with the best silicon-photonic modulators available today.Using cladding materials with stronger nonlinearities,the voltage–length product is expected to improve by more than an order of magnitude.展开更多
Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale.The scaling in data speed and span of the optica...Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale.The scaling in data speed and span of the optical links demands modulators to be concurrently performant and cost-effective.Silicon photonics(SiPh),a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology,is well-positioned to deliver the performance,price,and manufacturing volume for the high-speed modulators of future optical communication links.SiPh has relied on the plasma dispersion effect,either in injection,depletion,or accumulation mode,to demonstrate efficient high-speed modulators.The high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent performance.Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators.These modulators are in the early years of their development.They promise to extend the performance beyond the limits set by the physical properties of silicon.The focus of our study is to provide a comprehensive review of contemporary(i.e.,plasma dispersion modulators)and new modulator implementations that involve the integration of novel materials with SiPh.展开更多
基金supported in part by the National 973 Program of China (2011CB301700)the National 863 Program of China (2013AA014402)+1 种基金the National Natural Science Foundation of China (NSFC)(61127016,61107041,and 61422508)the Specialized Research Fund for the Doctoral Program of Higher Education of Ministry of Education (20130073130005)
文摘We demonstrate binary phase shift keying(BPSK) modulation using a silicon Mach–Zehnder modulator with aπ-phase-shift voltage(Vπ) of-4.5 V.The single-drive push–pull traveling wave electrode has been optimized using numerical simulations with a 3 dB electro-optic bandwidth of 35 GHz.The 32 Gb/s BPSK constellation diagram is measured with an error vector magnitude of 18.9%.
基金We acknowledge support by the DFG Center for Functional Nanostructuresthe Helmholtz International Research School of Teratronics+3 种基金the Karlsruhe School of Optics and Photonicsthe EU-FP7 projects SOFI(grant 248609)and EURO-FOS(grant 224402)the BMBF joint project MISTRAL,which is funded by the German Ministry of Education and Research under grant 01BL0804and the European Research Council(ERC Starting Grant‘EnTeraPIC’,number 280145).
文摘Electro-optic modulation at frequencies of 100 GHz and beyond is important for photonic-electronic signal processing at the highest speeds.To date,however,only a small number of devices exist that can operate up to this frequency.In this study,we demonstrate that this frequency range can be addressed by nanophotonic,silicon-based modulators.We exploit the ultrafast Pockels effect by using the silicon–organic hybrid(SOH)platform,which combines highly nonlinear organic molecules with silicon waveguides.Until now,the bandwidth of these devices was limited by the losses of the radiofrequency(RF)signal and the RC(resistor-capacitor)time constant of the silicon structure.The RF losses are overcome by using a device as short as 500 μm,and the RC time constant is decreased by using a highly conductive electron accumulation layer and an improved gate insulator.Using this method,we demonstrate for the first time an integrated silicon modulator with a 3dB bandwidth at an operating frequency beyond 100 GHz.Our results clearly indicate that the RC time constant is not a fundamental speed limitation of SOH devices at these frequencies.Our device has a voltage–length product of only V_(π)L=11 V mm,which compares favorably with the best silicon-photonic modulators available today.Using cladding materials with stronger nonlinearities,the voltage–length product is expected to improve by more than an order of magnitude.
文摘Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale.The scaling in data speed and span of the optical links demands modulators to be concurrently performant and cost-effective.Silicon photonics(SiPh),a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology,is well-positioned to deliver the performance,price,and manufacturing volume for the high-speed modulators of future optical communication links.SiPh has relied on the plasma dispersion effect,either in injection,depletion,or accumulation mode,to demonstrate efficient high-speed modulators.The high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent performance.Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators.These modulators are in the early years of their development.They promise to extend the performance beyond the limits set by the physical properties of silicon.The focus of our study is to provide a comprehensive review of contemporary(i.e.,plasma dispersion modulators)and new modulator implementations that involve the integration of novel materials with SiPh.
