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Trimmable bandgap reference circuit with exponential curvature compensation
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作者 Hong-Zhuan Chen Fei Chu +3 位作者 Wen-Tao Lu Tie-Liang Zhang Wen-Chang Li Wei Gao 《Journal of Electronic Science and Technology》 EI CAS CSCD 2023年第3期52-62,共11页
This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature ... This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature as well as reduce the influence of resistance-temperature dependency.Considering the degraded circuit performance caused by the process deviation,the trimmable module of the temperature coefficient(TC)is introduced to improve the circuit stability.The circuit has the advantages of simple structure,high linear stability,high TC accuracy,and trimmable TC.It consumes an area of 0.09 mm^(2)when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor(CMOS)process.The proposed circuit achieves the simulated power supply rejection(PSR)of about-78.7 dB@1 kHz,the measured TC of~4.7 ppm/℃over a wide temperature range from-55℃to 125℃with the 2.5-V single-supply voltage,and the tested line regulation of 0.10 mV/V.Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems. 展开更多
关键词 Bandgap reference Exponential curvature compensation Temperature coefficient(TC) Trimmable
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A Near-1V 10ppm/℃ CMOS Bandgap Reference with Curvature Compensation 被引量:8
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作者 幸新鹏 李冬梅 王志华 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期24-28,共5页
A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique,... A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area. 展开更多
关键词 CMOS bandgap reference low voltage curvature compensation
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Bandgap Reference Design by Means of Multiple Point Curvature Compensation 被引量:6
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作者 姜韬 杨华中 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第4期490-495,共6页
A new method,namely multiple point curvature compensation (MPCC),is proposed for the design of a bandgap reference,and its design principles, theoretical derivation, and one feasible circuitry implementation are pre... A new method,namely multiple point curvature compensation (MPCC),is proposed for the design of a bandgap reference,and its design principles, theoretical derivation, and one feasible circuitry implementation are presented. Being different from traditional techniques, this idea focuses on finding multiple temperatures in the whole range at which the first order derivatives of the output reference voltage equal zero. In this way, the curve of the output reference voltage is flattened and a better effect of curvature compensation is achieved. The circuitry is simulated in ST Microelectronics 0. 18μm CMOS technology, and the simulated result shows that the average temperature coefficient is only 1ppm/℃ in the range from - 40 to 125℃. 展开更多
关键词 bandgap reference curvature compensation sub-threshold circuit
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Pre-Compensation for Continuous-Path Running Trajectory Error in High-Speed Machining of Parts with Varied Curvature Features 被引量:2
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作者 JIA Zhenyuan SONG Dening +1 位作者 MA Jianwei GAO Yuanyuan 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2017年第1期37-45,共9页
Parts with varied curvature features play increasingly critical roles in engineering, and are often machined under high-speed continuous-path running mode to ensure the machining efficiency. However, the continuous-pa... Parts with varied curvature features play increasingly critical roles in engineering, and are often machined under high-speed continuous-path running mode to ensure the machining efficiency. However, the continuous-path running trajectory error is significant during high-feed-speed machining, which seriously restricts the machining precision for such parts with varied curvature features. In order to reduce the continuous-path running trajectory error without sacrificing the machining efficiency, a pre-compensation method for the trajectory error is proposed. Based on the formation mechanism of the continuous-path running trajectory error analyzed, this error is estimated in advance by approximating the desired toolpath with spline curves. Then, an iterative error pre-compensation method is presented. By machining with the regenerated toolpath after pre-compensation instead of the uncompensated toolpath, the continuous-path running trajectory error can be effectively decreased without the reduction of the feed speed. To demonstrate the feasibility of the proposed pre-compensation method, a heart curve toolpath that possesses varied curvature features is employed. Experimental results indicate that compared with the uncompensated processing trajectory, the maximum and average machining errors for the pre-compensated processing trajectory are reduced by 67.19% and 82.30%, respectively. An easy to implement solution for high efficiency and high precision machining of the parts with varied curvature features is provided. 展开更多
关键词 trajectory error dynamic error pre-compensation continuous-path running high-feed-speed machining parts with varied curvature features
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Curvature Compensated CMOS Bandgap Reference with Novel Process Variation Calibration Technique 被引量:1
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作者 Jiancheng Zhang Mao Ye +1 位作者 Yiqiang Zhao Gongyuan Zhao 《Journal of Beijing Institute of Technology》 EI CAS 2018年第2期182-188,共7页
A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of ... A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR achieves fine adjustment step towards the reference voltage,while keeping optimal TC by utilizing large resistance to help layout match. The high-order curvature compensation realized by poly and p-diffusion resistors is introduced into the design to guarantee the temperature characteristic. Implemented in 180 nm technology,the proposed BGR has been simulated to have a power supply rejection ratio( PSRR) of 91 dB@100 Hz. The calibration technique covers output voltage scope of 0. 49 V-0. 56 Vwith TC of 9. 45 × 10^(-6)/℃-9. 56 × 10^(-6)/℃ over the temperature range of-40 ℃-120 ℃. The designed BGR provides a reference voltage of 500 mV,with measured TC of 10. 1 × 10^(-6)/℃. 展开更多
关键词 bandgap reference voltage process variation resistance-trimming current-calibration curvature compensation temperature coefficient
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New Curvature-Compensated CMOS Bandgap Voltage Reference 被引量:4
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作者 Lu Shen Ning Ning Qi Yu Yan Luo Chun-Sheng Li 《Journal of Electronic Science and Technology of China》 2007年第4期370-373,共4页
A novel curvature-compensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp... A novel curvature-compensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp bipolar transistor. The proposed circuit, designed in a standard 0.18 μm CMOS process, achieves a good temperature coefficient of 2.44 ppm/℃ with temperature range from --40℃ to 85 ℃, and about 4 mV supply voltage variation in the range from 1.4 V to 2.4 V. With a 1.8 V supply voltage, the power supply rejection ratio is -56dB at 10MHz. 展开更多
关键词 Bandgap voltage reference CMOS curvature-compensation technique finite current gain.
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Analysis of ocular structural parameters and higher-order aberrations in Chinese children with myopia 被引量:3
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作者 Xue Li Qi Hu +3 位作者 Qian-Ru Wang Zi-Qing Feng Fan Yang Chun-Yu Du 《World Journal of Clinical Cases》 SCIE 2021年第27期8035-8043,共9页
BACKGROUND Myopia and high myopia are global public health concerns.Patients with high myopia account for 0.5%-5.0%of the global population.AIM To examine diopters,axial length(AL),higher-order aberrations,and other o... BACKGROUND Myopia and high myopia are global public health concerns.Patients with high myopia account for 0.5%-5.0%of the global population.AIM To examine diopters,axial length(AL),higher-order aberrations,and other ocular parameters in Chinese children with myopia,to analyze the influence of structural parameters associated with myopia on visual quality,and to provide a theoretical basis for the prevention and treatment of childhood myopia and high myopia.METHODS This study included 195 children aged 6–17 years with myopia.The AL was measured with an ultrasonic ophthalmic diagnostic instrument,and the aberrations,corneal curvature(minimum K1,maximum K2,and average Km),central corneal thickness,anterior chamber depth,and anterior chamber angle were measured using a Sirius three-dimensional anterior segment analyzer.Using a standard formula,the corneal radius of curvature R(337.3/Km)and AL/R values were obtained.RESULTS The diopter of high myopia compared with low-middle myopia was correlated with age and AL(r=-0.336,-0.405,P<0.001),and AL of high myopia was negatively correlated with K1,K2,and Km(r=-0.673,-0.661,and-0.680,respectively;P<0.001),and positively correlated with age and the anterior chamber depth(r=0.214 and 0.275,respectively;P<0.05).AL/R was more closely related to diopter than AL in children with myopia,and 94.4%of children with myopia had an AL/R of>3.00.CONCLUSION The ocular structural parameters of children change because of different diopters.AL/R is more specific and sensitive than AL in evaluating the refractive status of myopia in children.An AL/R of>3.00 may be used as a specific index of myopia in children.There are differences in AL/R between high myopia and low-middle myopia,which can be used for the classification of ametropia.The degree of myopia has a certain influence on higher-order aberrations. 展开更多
关键词 MYOPIA higher-order aberrations DIOPTER Axial length Cornea radius of curvature
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Study on the methods of precision controlling for the manufacture of hull curvature sections
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作者 LIU Yu-jun HU Ri-qiang DENG Yan-ping 《Journal of Marine Science and Application》 2006年第4期22-26,共5页
The precision controlling technology is a key step for the modern ship construction, with the precision controlling of the ship-hull curvature as one of bottlenecks in shipbuilding, where the initial is to present a c... The precision controlling technology is a key step for the modern ship construction, with the precision controlling of the ship-hull curvature as one of bottlenecks in shipbuilding, where the initial is to present a compensation value for the ship-hull plate precisely. The compensation value of the curvature plate is composed of two parts: the construction compensation, which results in the process of heating construction of curvature plate, and the assembling compensation, which results in welding ribbed stiffeners onto the curvature plate. Based on the developed computation system for the local contraction value, this paper presents a method to establish the experimented samples for the assembling compensation by means of numerical experiments, and another method to establish the practical mathematical model for the construction compensation of curvature plate. Furthermore, it introduces the experimental measuring method for the assembling compensation of the curvature plate, based on which the related database system has been developed. Numerical examples are analyzed to demonstrate the process to establish mathematical model for the assembling compensation values. 展开更多
关键词 hull curvature sections MANUFACTURE precision controlling compensation values
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一种新型带曲率补偿的带隙基准
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作者 李新 高梦真 杨森林 《电子元件与材料》 CAS 北大核心 2024年第7期878-883,共6页
针对传统带隙基准存在温度漂移大以及电源抑制比低的问题,提出了一种新型的带曲率补偿的带隙基准电压源。采用基极电流补偿以及曲率补偿技术对传统带隙基准结构进行改进。设计了低失配改进电路、低温漂改进以及启动电路等。利用共源共... 针对传统带隙基准存在温度漂移大以及电源抑制比低的问题,提出了一种新型的带曲率补偿的带隙基准电压源。采用基极电流补偿以及曲率补偿技术对传统带隙基准结构进行改进。设计了低失配改进电路、低温漂改进以及启动电路等。利用共源共栅电流镜技术和负反馈网络保证带隙基准输出电压,极大程度降低了运放失调电压对带隙基准电压的干扰,实现了低温漂特性。基于东部高科0.18μm BCD工艺,在Cadence Spectre下进行仿真。仿真结果表明:该带隙基准电路在-40~150℃温度范围内,输入电压为5 V,输出电压稳定在1.192 V;温度系数为4.84×10^(-6)/℃;在低频时电源抑制比为-78 dB。 展开更多
关键词 带隙基准 基极电流补偿 曲率补偿 低温度系数 电源抑制比
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一种低温度系数高阶补偿基准电压电路设计
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作者 张涛 邱云飞 刘劲 《湖南大学学报(自然科学版)》 EI CAS CSCD 北大核心 2024年第6期178-186,共9页
基准电压对模拟系统的性能与精度有着至关重要的影响.一般的曲率补偿仅能消除与温度相关的二阶项,难以满足某些电路对高精度的要求.现有的电路存在温度系数较高的问题,亟须对更高阶进行补偿.本文提出了一种新的高阶曲率补偿方法,通过利... 基准电压对模拟系统的性能与精度有着至关重要的影响.一般的曲率补偿仅能消除与温度相关的二阶项,难以满足某些电路对高精度的要求.现有的电路存在温度系数较高的问题,亟须对更高阶进行补偿.本文提出了一种新的高阶曲率补偿方法,通过利用CMOS晶体管亚阈值特性设计,成功实现了一种低温度系数电压基准电路.该方法首先利用两个不同温度系数的电流流过相同的亚阈值区CMOS晶体管,产生两个具有不同温度特性的栅源电压.然后,通过对这两个不同温度特性的栅源电压进行相减,产生对数电压,并与一阶补偿电压进行加权叠加,从而实现高阶补偿.为了提高电源抑制比(PSRR),该电路采用了高增益负反馈回路,避免了传统电压基准电路中放大器的使用,进一步地降低了功耗.本设计基于0.18μm CMOS工艺,在Cadence软件下完成电路设计、版图设计与仿真验证.仿真结果显示,该电路正常工作电压范围为1.6~3 V,在2 V的工作电压下,基准电压输出295 mV,在-45~125℃范围内温度系数为1.26 ppm/℃,PSRR为51.1 dB@1 kHz,最大静态电流为8.9μA.结果表明,该基准电压电路能够满足高精度集成电路系统的需求. 展开更多
关键词 低温度系数 亚阈值 电压基准 高阶曲率补偿
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A Piecewise-Linear Compensated Bandgap Reference 被引量:5
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作者 王红义 来新泉 +1 位作者 李玉山 李先锐 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第7期771-777,共7页
A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.The basic principle is to divide the whole operating temperature range into some su... A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.The basic principle is to divide the whole operating temperature range into some sub ranges.At different temperature sub ranges the bandgap reference can be compensated by different linear functions.Since the temperature sub range is much narrower than the whole range,the compensation error can be reduced significantly.Theoretically,the precision can be improved unlimitedly if the sub ranges are narrow enough.In the given example,with only three temperature sub ranges,the temperature coefficient of a conventional bandgap reference drops from 1 5×10 -5 /℃ to 2×10 -6 /℃ over the -40℃ to 120℃ temperature range. 展开更多
关键词 bandgap voltage reference piecewise linearly compensated curvature corrected temperature coefficient reference circuits
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一种采用高阶曲率补偿的带隙基准源
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作者 黄朝轩 李现坤 魏敬和 《电子技术应用》 2024年第10期7-13,共7页
基于0.18μm BCD工艺,提出了一种具有较低温度系数的高阶曲率补偿带隙基准源。在基本Kuijk带隙基准的结构基础上,利用VBE线性化法来进行高阶曲率补偿,同时保证流过补偿双极晶体管的电流也得到高阶补偿,两次高阶补偿使得带隙基准源的温... 基于0.18μm BCD工艺,提出了一种具有较低温度系数的高阶曲率补偿带隙基准源。在基本Kuijk带隙基准的结构基础上,利用VBE线性化法来进行高阶曲率补偿,同时保证流过补偿双极晶体管的电流也得到高阶补偿,两次高阶补偿使得带隙基准源的温度系数更低。根据仿真结果,该带隙基准电压在-55°C~125°C温度范围内,输出电压的最大压差为0.3766 mV,温度系数为1.762 ppm/°C,低频时电源抑制比(PSRR)为-73.9 dB。该带隙基准源已应用于某一高精度的低压差线性稳压器(LDO)中。 展开更多
关键词 带隙基准源 高阶曲率补偿 温度系数 电源抑制比 VBE线性化
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一种高电源抑制比低温度系数的带隙基准电路
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作者 钟超超 孔瀛 +3 位作者 莫艳图 宋奎鑫 康磊 梁庭 《电子器件》 CAS 2024年第3期603-609,共7页
采用两种方式提高了带隙基准电路的电源抑制比。首先,采用峰值电流源结构将三极管自身的增益引入反馈环路,从而提高了环路增益和带隙基准核心的电源抑制比。其次,运用预调制电路进一步提高了电源抑制比。此外,还提出了一种仅需源极负反... 采用两种方式提高了带隙基准电路的电源抑制比。首先,采用峰值电流源结构将三极管自身的增益引入反馈环路,从而提高了环路增益和带隙基准核心的电源抑制比。其次,运用预调制电路进一步提高了电源抑制比。此外,还提出了一种仅需源极负反馈非对称电流镜的曲率补偿电路,该电路具有跨工艺的通用性。所提出的电路采用0.18μm BCD工艺进行了验证,并应用在一款降压DC-DC变换器中。结果表明,所提出的电路在2.4 V、3.3 V和5 V供电下,低频分别具有127 dB、134 dB和136 dB的高电源抑制比,同时实现了3.74×10^(-6)/℃的低温度系数,总电流消耗仅为6.3μA~14.5μA。 展开更多
关键词 高电源抑制比 曲率补偿 峰值电流源 预调制电路
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一种带曲率补偿的低功耗带隙基准设计
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作者 张祖静 冯全源 刘恒毓 《微电子学》 CAS 北大核心 2024年第1期54-59,共6页
为了改善传统带隙基准中运放输入失调影响电压精度和无运放带隙基准电源抑制差的问题,设计了一款基于0.35μm BCD工艺的自偏置无运放带隙基准电路。提出的带隙基准源区别于传统运放箝位,通过负反馈网络输出稳定的基准电压,使其不再受运... 为了改善传统带隙基准中运放输入失调影响电压精度和无运放带隙基准电源抑制差的问题,设计了一款基于0.35μm BCD工艺的自偏置无运放带隙基准电路。提出的带隙基准源区别于传统运放箝位,通过负反馈网络输出稳定的基准电压,使其不再受运算放大器输入失调电压的影响;在负反馈环路与共源共栅电流镜的共同作用下,增强了输出基准的抗干扰能力,使得电源抑制能力得到了保证;同时采用指数曲率补偿技术,使得所设计的带隙基准源在宽电压范围内有良好的温度特性;且采用自偏置的方式,降低了静态电流。仿真结果表明,在5 V电源电压下,输出带隙基准电压为1.271 V,在-40~150℃工作温度范围内,温度系数为5.46×10^(-6)/℃,电源抑制比为-87 dB@DC,静态电流仅为2.3μA。该设计尤其适用于低功耗电源管理芯片。 展开更多
关键词 带隙基准 无运放 自偏置 指数曲率补偿 负反馈 温度系数 电源抑制 低功耗
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一种采用激光修调的高精度带隙基准电压源
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作者 韩前磊 王成皓 +1 位作者 钟道鸿 杨伟伟 《半导体技术》 CAS 北大核心 2024年第10期906-911,共6页
基于Brokaw带隙基准模型设计了一种高精度、低温漂的基准电压源。采用金属薄膜电阻的低温漂特性降低基准电压的温漂系数,并通过后期的激光修调实现基准电压的高精度输出;采用p型基区电阻的正温漂特性,引入一个正温度系数的二阶电压分量... 基于Brokaw带隙基准模型设计了一种高精度、低温漂的基准电压源。采用金属薄膜电阻的低温漂特性降低基准电压的温漂系数,并通过后期的激光修调实现基准电压的高精度输出;采用p型基区电阻的正温漂特性,引入一个正温度系数的二阶电压分量,实现带隙基准电压的二阶曲率补偿,进一步减小输出基准电压的温漂系数。采用双极型工艺完成设计,对电路进行测试。测试结果表明,5~36 V的电源电压范围内可稳定输出2.5 V、3 V的基准电压,输出电压温漂为2.17×10^(-6)/℃,输出电压误差绝对值为0.15 mV,线性调整率为2.85μV/V,输出短路电流为44.35 mA,静态电流为0.68 mA。 展开更多
关键词 带隙基准 高精度 低温漂 激光修调 曲率补偿
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300 m级深水导管架总装精度控制工法探讨
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作者 马光耀 焦方利 +2 位作者 赵鹏志 郑文毅 申超 《广东造船》 2024年第3期82-84,48,共4页
本论文以300 m级导管架建造总装的精度控制为案例,分析了深水导管架总装尺寸控制的重点及难点,阐述了导管架三维坐标控制网的建立与维护、深水导管架基础测量、导管架总装尺寸控制等总组精度控制方法;分析了导管架总装井口尺寸同心度以... 本论文以300 m级导管架建造总装的精度控制为案例,分析了深水导管架总装尺寸控制的重点及难点,阐述了导管架三维坐标控制网的建立与维护、深水导管架基础测量、导管架总装尺寸控制等总组精度控制方法;分析了导管架总装井口尺寸同心度以及沉降、地球曲率、温度等对导管架的影响及应对措施,为建造大型导管架的总装尺寸控制提供了宝贵的经验。 展开更多
关键词 300米级深水导管架 三维坐标控制网 总装尺寸控制 温度补偿 地球曲率
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A 2.2-V 2.9-ppm/℃BiCMOS bandgap voltage reference with full temperature-range curvature-compensation 被引量:1
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作者 周泽坤 马颖乾 +2 位作者 明鑫 张波 李肇基 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第7期91-95,共5页
A high precision high-order curvature-compensated bandgap reference compatible with the standard Bi-CMOS process,which uses a simple structure to realize a novel exponential curvature compensation in lower temperature... A high precision high-order curvature-compensated bandgap reference compatible with the standard Bi-CMOS process,which uses a simple structure to realize a novel exponential curvature compensation in lower temperature ranges,and a piecewise curvature correction in higher temperature ranges,is presented.Experiment results of the proposed bandgap reference implemented with a 0.6-μm BCD process demonstrate that a temperature coefficient of 2.9 ppm/℃is realized at a 3.6-V power supply,a power supply rejection ratio of 85 dB is achieved,and the line regulation is better than 0.318 mV/V for 2.2-5 V supply voltage dissipating a maximum supply current of 45μA.The active area of the presented bandgap reference is 260×240μm;. 展开更多
关键词 high-order curvature compensation exponential curvature compensation piecewise curvature compensation BiCMOS bandgap reference temperature coefficient PSRR
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A new curvature compensation technique for CMOS voltage reference using |V_(GS)| and △V_(BE) 被引量:1
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作者 李雪民 叶茂 +2 位作者 赵公元 张赟 赵毅强 《Journal of Semiconductors》 EI CAS CSCD 2016年第5期97-103,共7页
A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source-gate volt... A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source-gate voltage|VGS|p of a PMOS transistor working in the saturated region. The second sub-reference is the weighted sum of gate-source voltages|VGS|n of NMOS transistors in the subthreshold region and the difference between two base-emitter voltages △VBE of bipolar junction transistors (BJTs). The voltage reference implemented utilizing the proposed curvature compensation technique exhibits a low temperature coefficient and occupies a small silicon area. The proposed technique was verified in 0.18 μm standard CMOS process technology. The performance of the circuit has been measured. The measured results show a temperature coefficient as low as 12.7 pprrd /℃ without trimming, over a temperature range from -40 to 120℃, and the current consumption is 50 μA at room temperature. The measured power-supply rejection ratio (PSRR) is -31.2 dB @ 100 kHz. The circuit occupies an area of 0.045 mm2. 展开更多
关键词 voltage reference sub-reference curvature compensation SUBTHRESHOLD
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Negative voltage bandgap reference with multilevel curvature compensation technique 被引量:1
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作者 刘溪 刘倩 +2 位作者 靳哓诗 赵永瑞 李宗昊 《Journal of Semiconductors》 EI CAS CSCD 2016年第5期114-120,共7页
A novel high-order curvature compensation negative voltage bandgap reference (NBGR) based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation (ECC) term with... A novel high-order curvature compensation negative voltage bandgap reference (NBGR) based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation (ECC) term with many high order terms in itself, in a lower temperature range (TR) and a multilevel curvature compen- sation (MLCC) term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165℃ (--40 to 125 ℃) is realised. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS. The proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation (CSMC) 0.5 #m BCD technology demonstrates an accurate voltage of-1.183 V with a temperature coefficient (TC) as low as 2.45 ppm/℃over the TR of 165℃ at a -5.0 V power supply; the line regulation is 3 mV/V from a -5 to -2 V supply voltage. The active area of the presented NBGR is 370×180 μm2. 展开更多
关键词 negative voltage bandgap reference ECC multilevel curvature-compensation TC line regulation
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Low voltage bandgap reference with closed loop curvature compensation
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作者 范涛 杜波 +1 位作者 张峥 袁国顺 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第3期114-117,共4页
A new low-voltage CMOS bandgap reference (BGR) that achieves high temperature stability is proposed. It feeds back the output voltage to the curvature compensation circuit that constitutes a closed loop circuit to c... A new low-voltage CMOS bandgap reference (BGR) that achieves high temperature stability is proposed. It feeds back the output voltage to the curvature compensation circuit that constitutes a closed loop circuit to cancel the logarithmic term of voltage VBE. Meanwhile a low voltage amplifier with the 0.5 μm low threshold technology is designed for the BGR. A high temperature stability BGR circuit is fabricated in the CSMC 0.5μm CMOS technology. The measured result shows that the BGR can operate down to 1 V, while the temperature coefficient and line regulation are only 9 ppm/℃ and 1.2 mV/V, respectively. 展开更多
关键词 bandgap reference low voltage reference curvature compensation
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