Gelation of Hole Transport Layer to Improve the Stability of Perovskite Solar Cells

To achieve high power conversion efficiency(PCE) and long-term stability of perovskite solar cells(PSCs), a hole transport layer(HTL) with persistently high conductivity, good moisture/oxygen barrier ability, and adequate passivation capability is important. To achieve enough conductivity and effective hole extraction, spiro-OMe TAD, one of the most frequently used HTL in optoelectronic devices, often needs chemical doping with a lithium compound(LiTFSI). However, the lithium salt dopant induces crystallization and has a negative impact on the performance and lifetime of the device due to its hygroscopic nature. Here, we provide an easy method for creating a gel by mixing a natural small molecule additive(thioctic acid, TA) with spiro-OMe TAD. We discover that gelation effectively improves the compactness of resultant HTL and prevents moisture and oxygen infiltration. Moreover, the gelation of HTL improves not only the conductivity of spiro-OMe TAD, but also the operational robustness of the devices in the atmospheric environment. In addition, TA passivates the perovskite defects and facilitates the charge transfer from the perovskite layer to HTL. As a consequence, the optimized PSCs based on the gelated HTL exhibit an improved PCE(22.52%) with excellent device stability.

Tailored PEDOT:PSS hole transport layer for higher performance in perovskite solar cells: Enhancement of electrical and optical properties with improved morphology

Precise control over the charge carrier dynamics throughout the device can result in outstanding performance of perovskite solar cells(PSCs).Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)is the most actively studied hole transport material in p-i-n structured PSCs.However,charge transport in the PEDOT:PSS is limited and inefficient because of its low conductivity with the presence of the weak ionic conductor PSS.In addition,morphology of the underlying PEDOT:PSS layer in PSCs plays a crucial role in determining the optoelectronic quality of the active perovskite absorber layer.This work is focused on realization of a non-wetting conductive surface of hole transport layer suitable for the growth of larger perovskite crystalline domains.This is accomplished by employing a facile solventengineered(ethylene glycol and methanol)approach resulting in removal of the predominant PSS in PEDOT:PSS.The consequence of acquiring larger perovskite crystalline domains was observed in the charge carrier dynamics studies,with the achievement of higher charge carrier lifetime,lower charge transport time and lower transfer impedance in the solvent-engineered PEDOT:PSS-based PSCs.Use of this solventengineered treatment for the fabrication of MAPbI3 PSCs greatly increased the device stability witnessing a power conversion efficiency of 18.18%,which corresponds to^37%improvement compared to the untreated PEDOT:PSS based devices.

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.

TTA as a potential hole transport layer for application in conventional polymer solar cells

Hole transport layers(HTLs)play a vital role in organic solar cells(OSCs).In this work,a derivative of tetrathiafulvalene with four carboxyl groups TTA was introduced as a novel HTL to fabricate OSC with high performance.Displaying a better energy level match between HTL and active layers,the TTA based devices show a peak power conversion efficiency of 9.09%,which is comparable to the devices based on PEDOT:PSS.The favorable surface morphology recorded via atomic force microscopy,low series loss and charge recombination indicated by electrochemical impedance spectroscopy,synchronously verify the potential of TTA for application in OSCs as a valid kind of HTLs.

UV-ozone-treated MoO_3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC_(71) BM photovoltaic devices

The enhanced performance of a squaraine compound, with 2,4-bis[4-（N,N-diisobutylamino）-2,6-dihydroxyphenyl] squaraine as the donor and [6,6]-phenyl-C71-butyric acid methyl ester （PC71BM） as the acceptor, in solution-processed or- ganic photovoltaic devices is obtained by using UV-ozone-treated MoO3 as the hole-collecting buffer layer. The optimized thickness of the MoO3 layer is 8 nm, at which the device shows the best power conversion efficiency （PCE） among all devices, resulting from a balance of optical absorption and charge transport. After being treated by UV-ozone for 10 min, the transmittance of the MoO3 film is almost unchanged. Atomic force microscopy results show that the treated surface morphology is improved. A high PCE of 3.99% under AM 1.5 G illumination （100 mW/cm2） is obtained.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

P-InGaN/p-GaN superlattices （SLs） are developed for a hole accumulation layer （HAL） of a blue light emitting diode （LED）. Free hole concentration as high as 2.6× 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and A1GaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Fabrication of Perovskite-Type Photovoltaic Devices with Polysilane Hole Transport Layers

Perovskite-type photovoltaic devices with polysilane hole transport layers were fabricated by a spin-coating method. In the present work, poly(methyl phenylsilane) (PMPS) and decaphenylcyclopentasilane (DPPS) were used as the hole transport layers. First, structural and optical properties of the PMPS and DPPS films were investigated, and the as-prepared PMPS and DPPS films were amorphous. Optical absorption spectra of the amorphous PMPS and DPPS showed some marked features due to the nature of polysilanes. Then, microstructures, optical and photovoltaic properties of the perovskite-type photovoltaic devices with polysilane hole transport layers were investigated. Current density-voltage characteristics and incident photon to current conversion efficiency of the photovoltaic devices with the polysilane layers showed different photovoltaic performance each other, attributed to molecular structures of the polysilanes and Si content in the present hole transport layers.

Improvement of Performance of Organic Light-Emitting Diodes with Both a MoO3 Hole Injection Layer and a MoO3 Doped Hole Transport Layer

We improve the performance of organic light-emitting diodes （OLEDs） with both a MoO3 hole injection layer （HIL） and a MoO3 doped hole transport layer （HTL）, and present a systematical and comparative investigation on these devices. Compared with OLEDs with only MoO3 HIL or MoO3 doped HTL, OLEDs with both MoO3 HIL and MoO3 doped HTL show superior performance in driving voltage, power efficiency, and stability. Based on the typical NPB/Alq3 heterojunction structure, OLEDs with both MoO3 HIL and MoO3 doped HTL show a driving voltage of 5.4 V and a power efficiency of 1.41 lm/W for 1000 cd/m2, and a lifetime of around 0. 88 h with an initial luminance of 5268 cd/m2 under a constant current of 190 mA/cm2 operation in air without encapsulation. While OLEDs with only MoO3 HIL or MoO3 doped HTL show higher driving voltages of 6.4 V or 5.8 V and lower power efficiencies of 1.201m/W or 1.341m/W for 1000cd/m2, and a shorter lifetime of 0.33 or 0.60h with an initial luminance of around 5122 or 5300cd/m2 under a constant current of 200 or 216mA/cm2 operation. Our results demonstrate clearly that using both MoO3 HIL and MoO3 doped HTL is a simple and effective approach to simultaneoasly improve both the hole injection and transport efficiency, resulting from the lowered energy barrier at the anode interface and the increased hole carrier density in MoO3 doped HTL.

Charge transfer modification of inverted planar perovskite solar cells by NiO_(x)/Sr:NiO_(x)bilayer hole transport layer

Perovskite solar cells(PSCs) are the most promising commercial photoelectric conversion technology in the future.The planar p–i–n structure cells have advantages in negligible hysteresis, low temperature preparation and excellent stability.However, for inverted planar PSCs, the non-radiative recombination at the interface is an important reason that impedes the charge transfer and improvement of power conversion efficiency. Having a homogeneous, compact, and energy-levelmatched charge transport layer is the key to reducing non-radiative recombination. In our study, NiO_(x)/Sr:NiO_(x)bilayer hole transport layer(HTL) improves the holes transmission of NiO_(x)based HTL, reduces the recombination in the interface between perovskite and HTL layer and improves the device performance. The bilayer HTL enhances the hole transfer by forming a driving force of an electric field and further improves J_(sc). As a result, the device has a power conversion efficiency of 18.44%, a short circuit current density of 22.81 m A·cm^(-2) and a fill factor of 0.80. Compared to the pristine PSCs, there are certain improvements of optical parameters. This method provides a new idea for the future design of novel hole transport layers and the development of high-performance solar cells.

Highly efficient bifacial semitransparent perovskite solar cells based on molecular doping of CuSCN hole transport layer

Coper thiocyanate(CuSCN)is generally considered as a very hopeful inorganic hole transport material(HTM)in semitransparent perovskite solar cells(ST-PSCs)because of its low parasitic absorption,high inherent stability,and low cost.However,the poor electrical conductivity and low work function of CuSCN lead to the insufficient hole extraction and large open-circuit voltage loss.Here,2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane(F4TCNQ)is employed to improve conductivity of CuSCN and band alignment at the CuSCN/perovskite(PVK)interface.As a result,the average power conversion efficiency(PCE)of PSCs is boosted by≈11%.In addition,benefiting from the superior transparency of p-type CuSCN HTMs,the prepared bifacial semitransparent n-i-p planar PSCs demonstrate a maximum efficiency of 14.8%and 12.5%by the illumination from the front side and back side,respectively.We believe that this developed CuSCN-based ST-PSCs will promote practical applications in building integrated photovoltaics and tandem solar cells.

Increased performance of an organic light-emitting diode by employing a zinc phthalocyanine based composite hole transport layer

We demonstrate that the electroluminescent performances of organic light-emitting diodes are significantly improved by employing a zinc phthalocyanine （ZnPc）-based composite hole transport layer （c-HTL）. The optimum ris-（8-hydroxyquinoline）aluminum （Alq3）-based organic light-emitting diode with a c-HTL exhibits a lower turn-on voltage of 2.8 V, a higher maximum current efficiency of 3.40 cd/A and a higher maximum power efficiency of 1.91 lm/W, which are superior to those of the conventional device （turn-on voltage of 3.8 V, maximum current efficiency of 2.60 cd/A, and maximum power efficiency of 1.21 lm/W）. We systematically studied the effects of different kinds of N’-diphenyl-N,N’-bis（1-naphthyl）（1,1’-biphenyl）-4,4’diamine （NPB）：ZnPc c-HTL. Meanwhile, we also investigate their mechanisms different from that in the case of using ZnPc as buffer layer. The specific analysis is based on the absorption spectra of the hole transporting material and current density–voltage characteristics of the corresponding hole-only devices.

Optical and NH₃Gas Sensing Properties of Hole-Transport Layers Based on PEDOT: PSS Incorporated with Nano-TiO₂

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) incorporated with nanocrystalline TiO2 powder (PEDOT:PSS+nc-TiO2) films were prepared by spin-coating technique. SEM surface morphology, UV-Vis spectra and NH3 gas sensing of were studied. Results showed that the PEDOT:PSS+nc-TiO2 film with a content of 9.0 wt% of TiO2 is most suitable for both the hole transport layer and the NH3 sensing. The responding time of the sensor made from this composite film reached a value as fast as 20 s. The rapid responsiveness to NH3 gas was attributed to the efficient movement of holes as the major charge carriers in PEDOT:PSS+nc-TiO2 composite films. Useful applications in organic electronic devices like light emitting diodes and gas thin film sensors can be envisaged.

Study on characteristics of a double-conductible channel organic thin-film transistor with an ultra-thin hole-blocking layer

The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/（V-s） and -4.6 V, respectively.

加强筋位置对半穿甲战斗部侵彻多层钢靶性能影响研究

为了研究加强筋位置对半穿甲战斗部侵彻多层钢靶性能的影响,通过试验及数值仿真,研究了加强筋在弹体轴向不同位置处的2种半穿甲战斗部,以一定速度(710 m/s)、着角(20°)侵彻8层钢靶的弹道偏转、弹孔尺寸、余速的差异。研究结果表明:加强筋位置由弹尖向质心位置逼近时弹道偏转角减小、弹孔长轴减小、穿甲能力提升;弹道偏转角增量与靶间距呈正相关关系;弹道偏转角、侵彻余速、弹头侵蚀量及弹孔仿真结果与试验实测值最大偏差为8.82%,仿真与试验结果符合较好。研究结果可为半穿甲战斗部方案设计提供参考。

机液复合全通径丢手工具的研制及应用

针对超深碳酸盐岩长裸眼井酸压完井中常规丢手工具可靠性及通径能力不足的问题,研制了一种新型机液复合全通径丢手工具。该丢手工具集成机械丢手工具和液压丢手工具的优点,采用棘爪式承载结构保障在深井管柱下放过程中,对丢手工具的高抗拉需求,利用压差滑套作为棘爪解锁机构,实现工具全通径,棘爪解锁后再依靠机械剪切销钉进行管柱高效丢手。新研制的丢手工具,既能保障深井长裸眼内完井管具的安全下入及后期顺利丢手,又避免了管柱缩径节流问题,有效降低长酸压管柱摩阻,同时也为后期修井作业提供更多选择性。通过有限元分析,室内整机试验及现场应用评价,验证了新研制的机液一体全通径丢手工具性能的可靠性及实用性,累计应用46井次,一次到位和丢手成功率均为100%,其中最深7178.94 m,最大井斜角92.20°,具有广阔的应用前景。

量子点发光二极管传输层研究进展

量子点发光二极管(QLED)凭借着色纯度好、半最大发射带宽窄、无机成分寿命长、合成工艺简单等优点,在显示和固态照明等领域表现出广泛的应用潜力。近年来,QLED的性能提升迅速,有取代有机发光二极管(OLED)的趋势。QLED的传输层材料的选择对提高器件的载流子注入起到了至关重要的作用。传输层的化学性质及其界面也会对器件的稳定性和寿命产生影响。本文总结了QLED传输层的研究现状,分析了制约QLED性能的因素,介绍了其性能改进的方向方法,并展望了QLED的未来发展。

气动潜孔锤在港口超厚抛石层中引孔沉桩的应用

气动潜孔锤钻孔具有施工速度快、功效高、质量可靠、性价比高,以及设备占地面积小、绿色环保无泥浆等特点,尤其适用于在超厚岩层的区域钻孔,但在港口工程领域应用较少。某石化码头工程引堤管架基础工程采用传统的冲孔灌注桩方案,施工效率非常低,无法如期保质完成。创新性地引入长螺旋气动潜孔锤辅助PHC桩沉桩的施工工艺,将原来的29个月施工时间缩短为2.5个月,极大提高了沉桩效率,满足工程总体进度要求;同时降低材料费、施工费,有效解决了工程难题,保证工程顺利按期完工。

下穿地下构筑物群桩富水砂层盾构通道MJS预加固施工技术研究及应用

下穿地下构筑物群桩富水砂层盾构通道MJS预加固施工技术包括技术原理、实施思路和具体施工步骤,其由密布群桩富水砂层水平引孔、富水砂层水平引孔砂土流失控制、常规水平MJS注浆加固3个环节组成。技术采用引孔机钻杆+外套管进行水平引孔,实现立柱桩和高强度管桩的穿越,以及富水砂层中的长距离成孔,引孔过程中通过双液注浆对注浆线路进行一次加固,同时利用洞口安装的法兰盘+止回阀来进行砂土流失控制,减少引孔对地下构筑物和周边环境的影响,引孔完成后,进行常规MJS注浆加固,达到预加固目标,并形成具体的下穿地下构筑物群桩富水砂层盾构通道MJS预加固施工步骤指导施工,大幅减少对地下构筑物和周边环境的影响,减少泥浆浪费,提高施工效率,经济社会效益较好,具有较好的推广应用价值。