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Influences of Mg^(2+) ion on dopant occupancy and upconversion luminescence of Ho^(3+) ion in LiNbO_3 crystal 被引量:1
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作者 代丽 徐超 +2 位作者 张颖 李大勇 徐玉恒 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第9期399-402,共4页
The effects of a Mg^2+ ion on the dopant occupancy and upconversion luminescence of a Ho^3+ ion in LiNbO3 crystal are reported. The birefringence gradient of the crystal is measured to investigate the optical homoge... The effects of a Mg^2+ ion on the dopant occupancy and upconversion luminescence of a Ho^3+ ion in LiNbO3 crystal are reported. The birefringence gradient of the crystal is measured to investigate the optical homogeneity. The X-ray powder diffraction spectrum and the upconversion luminescence are used to investigate defect structure and spectroscopic properties of Mg,Ho:LiNbO3. Under 808-nm excitation, blue, red, and very intense yellow-green bands are observed. Based on the energy levels of Ho^3+ in LiNbO3, and the pump intensity dependence of the observed emission, an excitation scheme is presented. The upconversion emission spectra reveal an enhancement of upconversion intensity when the Mg^2+ ions are introduced into Ho:LiNbO3. The main upconversion mechanism is discussed in this work. 展开更多
关键词 Mg Ho:LiNb03 upconversion luminescence optical homogeneity
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Annealing and optical homogeneity of large ZnGeP_(2) single crystal 被引量:1
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作者 Li-Qiang Cao Bei-Jun Zhao +5 位作者 Shi-Fu Zhu Bao-Jun Chen Zhi-Yu He Deng-Hui Yang Hui Liu Hu Xie 《Rare Metals》 SCIE EI CAS CSCD 2022年第9期3214-3219,共6页
A high-quality ZnGeP_(2)(ZGP)single crystal with large size ofΦ30 mm×80 mm was grown by a modified vertical Bridgman method.ZGP wafers were annealed with ZGP polycrystalline powder for 300 h at 550,600 and 650℃... A high-quality ZnGeP_(2)(ZGP)single crystal with large size ofΦ30 mm×80 mm was grown by a modified vertical Bridgman method.ZGP wafers were annealed with ZGP polycrystalline powder for 300 h at 550,600 and 650℃,respectively.The as-grown and annealed crystals were characterized by X-ray diffraction(XRD)analysis,Fourier transform infrared spectroscopy(FTIR),IR microscope and energy-dispersive spectroscopy(EDS).Results show that the quality of all wafers is improved evidently after annealing and the optimum annealing temperature obtained is 600℃.The IR transmittance of the wafer measured by FTIR is up to 56.78%at wavelength of 2.0μm nearby and exceeds 59.00%in the wavelength range of 3.0-8.0μm.The deviations from stoichiometry decrease,and the homogeneity of the crystal is also improved after annealing.In this paper,scanning infrared map was proposed as a new nondestructive method to evaluate optical quality and homogeneity of crystal through comparing the IR transmittance with the three-dimensional IR spectral contour map. 展开更多
关键词 ZnGeP_(2)crystals ANNEALING Infrared transmittance Scanning infrared map optical homogeneity
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