Improving the performance of generation,transport and injection of hot carriers within metal/semiconductor junctions is critical for promoting the hot-carrier applications.However,the conversion efficiency of hot carr...Improving the performance of generation,transport and injection of hot carriers within metal/semiconductor junctions is critical for promoting the hot-carrier applications.However,the conversion efficiency of hot carriers in the commonly used noble metals(e.g.,Au)is extremely low.Herein,through a systematic study by first-principles calculation and Monte Carlo simulation,we show that TiN might be a promising plasmonic material for high-efficiency hot-carrier applications.Compared with Au,TiN shows obvious advantages in the generation(high density of low-energy hot electrons)and transport(long lifetime and mean free path)of hot carriers.We further performed a device-oriented study,which reveals that high hotcarrier injection efficiency can be achieved in core/shell cylindrical TiN/TiO_(2)junctions.Our findings provide a deep insight into the intrinsic processes of hot-carrier generation,transport and injection,which is helpful for the development of hot-carrier devices and applications.展开更多
基金We really appreciate the financial support from the National Natural Science Foundation of China(Grant Nos.61875143,61905170,62075146,and 11574223)the Natural Science Foundation of Jiangsu Province(Nos.BK20180042,BK20181169,and BK20190816)+1 种基金the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(No.17KJA480004)the Priority Academic Program Development(PAPD)of Jiangsu Higher Education Institution,and the start-up funding of Ningbo University,and the Yongjiang Recruitment Project(No.432200942)。
文摘Improving the performance of generation,transport and injection of hot carriers within metal/semiconductor junctions is critical for promoting the hot-carrier applications.However,the conversion efficiency of hot carriers in the commonly used noble metals(e.g.,Au)is extremely low.Herein,through a systematic study by first-principles calculation and Monte Carlo simulation,we show that TiN might be a promising plasmonic material for high-efficiency hot-carrier applications.Compared with Au,TiN shows obvious advantages in the generation(high density of low-energy hot electrons)and transport(long lifetime and mean free path)of hot carriers.We further performed a device-oriented study,which reveals that high hotcarrier injection efficiency can be achieved in core/shell cylindrical TiN/TiO_(2)junctions.Our findings provide a deep insight into the intrinsic processes of hot-carrier generation,transport and injection,which is helpful for the development of hot-carrier devices and applications.
