In this study,surface modification of monocrystalline silicon with two doses of hydrogen ion implantation and the plunge cutting process were conducted to explore the influence of hydrogen ions on the cutting behavior...In this study,surface modification of monocrystalline silicon with two doses of hydrogen ion implantation and the plunge cutting process were conducted to explore the influence of hydrogen ions on the cutting behavior of silicon.The results show that ion implantation is capable of deteriorating or improving the machinability of silicon,depending on the implantation dose.More cleavages and a reduction of critical depth of cut(CDoC)were observed for the silicon with a low implantation dose in the cutting direction of<100>in comparison to bare silicon,while no cleavage and an increase of CDoC were achieved after implantation with a high dose in the same cutting direction.Besides,the ductile cutting and thrust forces of the silicon with the low dose are larger than the bare silicon,but the forces are significantly reduced for the silicon after the high dose of implantation.The variation of the cutting forces is due to the different required stresses to overcome ductile and fracture deformation of silicon.展开更多
Low energy hydrogen ion was used to passivate the electrically active defects existing in grains and grain boundaries of polycrystalline silicon solar cells.Short circuit current of H + implanted cells remarkably...Low energy hydrogen ion was used to passivate the electrically active defects existing in grains and grain boundaries of polycrystalline silicon solar cells.Short circuit current of H + implanted cells remarkably increased before and after preparing TiO 2AR(antireflective)coating.The measurements(at λ=6328) of the optical properties of H + implanted silicon samples show that:the value of absorption coefficient reached the level of a Si;refractive index n and reflectivity R significantly decreased;the optical band gap increased from 1.1 eV to 1.3 eV.The results indicate that Si H bonds have been formed after H + implantation.The calculation shows that the optical thickness cycle of TiO 2 AR coating will reduce correspondingly in order to obtain the optimum optical match between AR coating and implanted silicon since refractive index decreases after H + implantation.展开更多
基金The work described in this paper was jointly supported by the Research Committee(Project No.G-YBLE)State Key Laboratory of Ultra-precision Machining Technology(Project No.RUWB)of the Hong Kong Polytechnic University.
文摘In this study,surface modification of monocrystalline silicon with two doses of hydrogen ion implantation and the plunge cutting process were conducted to explore the influence of hydrogen ions on the cutting behavior of silicon.The results show that ion implantation is capable of deteriorating or improving the machinability of silicon,depending on the implantation dose.More cleavages and a reduction of critical depth of cut(CDoC)were observed for the silicon with a low implantation dose in the cutting direction of<100>in comparison to bare silicon,while no cleavage and an increase of CDoC were achieved after implantation with a high dose in the same cutting direction.Besides,the ductile cutting and thrust forces of the silicon with the low dose are larger than the bare silicon,but the forces are significantly reduced for the silicon after the high dose of implantation.The variation of the cutting forces is due to the different required stresses to overcome ductile and fracture deformation of silicon.
文摘Low energy hydrogen ion was used to passivate the electrically active defects existing in grains and grain boundaries of polycrystalline silicon solar cells.Short circuit current of H + implanted cells remarkably increased before and after preparing TiO 2AR(antireflective)coating.The measurements(at λ=6328) of the optical properties of H + implanted silicon samples show that:the value of absorption coefficient reached the level of a Si;refractive index n and reflectivity R significantly decreased;the optical band gap increased from 1.1 eV to 1.3 eV.The results indicate that Si H bonds have been formed after H + implantation.The calculation shows that the optical thickness cycle of TiO 2 AR coating will reduce correspondingly in order to obtain the optimum optical match between AR coating and implanted silicon since refractive index decreases after H + implantation.
