The effect of hydrogen plasma treatment （HPT） during the initial stage ofmicrocrystalline silicon （μc- Si） growth on the defect density of μc-Si has been investigated. Lower absorption coefficient in the 0.8-1.0...The effect of hydrogen plasma treatment （HPT） during the initial stage ofmicrocrystalline silicon （μc- Si） growth on the defect density of μc-Si has been investigated. Lower absorption coefficient in the 0.8-1.0 eV indicated less defect density compared to its counterpart without HPT. The infrared spectroscopy of μc-Si with HPT shows an increase in 2040 cm-1, which reveals more Si-H in the amorphous/crystalline interfaces. We ascribe the decrease of defect density to hydrogen passivation of the dangling bonds. Improved performance of μc-Si solar cell with HPT is due to the reduced defect density.展开更多
Hydrogenated amorphous carbon films were fabricated by using layer-by-layer deposition method and hydrogen dilution method in a small d.c.-assisted plasma enhanced chemical vapor deposition system. It was found that t...Hydrogenated amorphous carbon films were fabricated by using layer-by-layer deposition method and hydrogen dilution method in a small d.c.-assisted plasma enhanced chemical vapor deposition system. It was found that the hydrogen plasma treatment could change the sp2/sp3 ratio to some extent by chemical etching. The improvements of field emission characteristics were observed compared with that from conventionally deposited a-C films, which can be attributed to the large field enhancement effect due to the inhomogeneous distribution of nanometer scale sp2 clusters and the reduction of the surface emission barrier due to the hydrogen termination.展开更多
The behavior of H inβ-Ga_(2)O_(3) is of substantial interest because it is a common residual impurity that is present inβ-Ga_(2)O_(3),regardless of the synthesis methods.Herein,we report the influences of H-plasma e...The behavior of H inβ-Ga_(2)O_(3) is of substantial interest because it is a common residual impurity that is present inβ-Ga_(2)O_(3),regardless of the synthesis methods.Herein,we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxialβ-Ga_(2)O_(3) thin films grown on sapphire substrates by chemical vapor deposition.The results in-dicate that the H incorporation leads to a significantly increased electrical conductivity,a greatly reduced defect-related photolu-minescence emission,and a slightly enhanced transmittance,while it has little effect on the crystalline quality of theβ-Ga_(2)O_(3) films.The significant changes in the electrical and optical properties ofβ-Ga_(2)O_(3) may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H.Temperature dependent electrical properties of the H-in-corporatedβ-Ga_(2)O_(3) films are also investigated,and the dominant scattering mechanisms at various temperatures are dis-cussed.展开更多
Methane was decomposed to hydrogen and carbon nanotubes (CNTs) by microwave plasma, using Fe/Si catalyst activated by biased (—150 V) hydrogen plasma for various treatment times. Upon exposure to biased hydrogen plas...Methane was decomposed to hydrogen and carbon nanotubes (CNTs) by microwave plasma, using Fe/Si catalyst activated by biased (—150 V) hydrogen plasma for various treatment times. Upon exposure to biased hydrogen plasma, the catalyst surface becomes lumpy within 1 min, coheres between 5 and 10 min and forms particles after 20 min. The methane conversion increased up to 93% over the treatment time of 5 min. The hydrogen yield showed as similar tendency as the methane conversion and kept 83% at treatment time of 5 min. The treatment time up to 1 min increased the amount of deposited carbon, and after treatment time of 5 min it dropped;then again after treatment time of 20 min, it increased to reach a maximum value of 22 gc/gcat. Deposited carbon was found to be consisted of carbon nanotubes. It grew vertically on the catalyst surface and reached a maximum length of 30.7 nm after treatment time of 10 min. Multiple types of CNTs were present, and the CNT diameters decreased with increasing plasma treatment time.展开更多
Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-tre...Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental results indicate that： （1） The instability of plasma in the initial stage will damage the surface of c-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.（2） The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s.展开更多
ZnO films with special textures ave fabricated on Mo-coated Al2O3 ceramic substrates by the catalyst-free electron beam evaporation method, and the as-deposited films are treated by hydrogen plasma. It is found that t...ZnO films with special textures ave fabricated on Mo-coated Al2O3 ceramic substrates by the catalyst-free electron beam evaporation method, and the as-deposited films are treated by hydrogen plasma. It is found that the surface morphologies of the films are changed significantly after hydrogen plasma treatment and that the films consist of vertically standing and intersecting nanosheets. A lower turn-on field of 1.2 V/μm and an enhanced current density -0.11 mA/cm2 at 2.47 V/μm are achieved. The low threshold field and the high emission current density are attributed primarily to the unique shape and smaller resistivity of the ZnO nanosheet films.展开更多
基金supported by the National High Technology Research and Development Program of China(No.2011AA050504)the National Natural Science Foundation of China(No.51072194)the Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(No.12JG01)
文摘The effect of hydrogen plasma treatment （HPT） during the initial stage ofmicrocrystalline silicon （μc- Si） growth on the defect density of μc-Si has been investigated. Lower absorption coefficient in the 0.8-1.0 eV indicated less defect density compared to its counterpart without HPT. The infrared spectroscopy of μc-Si with HPT shows an increase in 2040 cm-1, which reveals more Si-H in the amorphous/crystalline interfaces. We ascribe the decrease of defect density to hydrogen passivation of the dangling bonds. Improved performance of μc-Si solar cell with HPT is due to the reduced defect density.
基金supported by the NSFof China(59802004)Jiangsu Province,China(BK99047)+1 种基金RGC of Hongkong(No.CUHK 4173/98E)support of Groucher Foundation of Hong Kong
文摘Hydrogenated amorphous carbon films were fabricated by using layer-by-layer deposition method and hydrogen dilution method in a small d.c.-assisted plasma enhanced chemical vapor deposition system. It was found that the hydrogen plasma treatment could change the sp2/sp3 ratio to some extent by chemical etching. The improvements of field emission characteristics were observed compared with that from conventionally deposited a-C films, which can be attributed to the large field enhancement effect due to the inhomogeneous distribution of nanometer scale sp2 clusters and the reduction of the surface emission barrier due to the hydrogen termination.
基金supported by the National Natural Science Foundation of China (Grant Nos. 62174009, 61904174 and 61874106)the Natural Science Foundation of Beijing Municipality (Grant No. 4212045)the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43000000)
文摘The behavior of H inβ-Ga_(2)O_(3) is of substantial interest because it is a common residual impurity that is present inβ-Ga_(2)O_(3),regardless of the synthesis methods.Herein,we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxialβ-Ga_(2)O_(3) thin films grown on sapphire substrates by chemical vapor deposition.The results in-dicate that the H incorporation leads to a significantly increased electrical conductivity,a greatly reduced defect-related photolu-minescence emission,and a slightly enhanced transmittance,while it has little effect on the crystalline quality of theβ-Ga_(2)O_(3) films.The significant changes in the electrical and optical properties ofβ-Ga_(2)O_(3) may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H.Temperature dependent electrical properties of the H-in-corporatedβ-Ga_(2)O_(3) films are also investigated,and the dominant scattering mechanisms at various temperatures are dis-cussed.
文摘Methane was decomposed to hydrogen and carbon nanotubes (CNTs) by microwave plasma, using Fe/Si catalyst activated by biased (—150 V) hydrogen plasma for various treatment times. Upon exposure to biased hydrogen plasma, the catalyst surface becomes lumpy within 1 min, coheres between 5 and 10 min and forms particles after 20 min. The methane conversion increased up to 93% over the treatment time of 5 min. The hydrogen yield showed as similar tendency as the methane conversion and kept 83% at treatment time of 5 min. The treatment time up to 1 min increased the amount of deposited carbon, and after treatment time of 5 min it dropped;then again after treatment time of 20 min, it increased to reach a maximum value of 22 gc/gcat. Deposited carbon was found to be consisted of carbon nanotubes. It grew vertically on the catalyst surface and reached a maximum length of 30.7 nm after treatment time of 10 min. Multiple types of CNTs were present, and the CNT diameters decreased with increasing plasma treatment time.
基金Project supported by the National Key Basic Research Program of China(No.2011CBA00705)the Knowledge Innovation Project of the Chinese Academy of Sciences(No.KGCX2-YW-351).
文摘Amorphous/crystalline silicon heterojunctions（a-Si：H/c-Si SHJ） were prepared by plasma-enhanced chemical vapor deposition（PECVD）.The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental results indicate that： （1） The instability of plasma in the initial stage will damage the surface of c-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.（2） The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s.
基金supported by the Science Foundation of Shanghai Human Resources and Social Security Bureau, China (Grant No. 2009023)
文摘ZnO films with special textures ave fabricated on Mo-coated Al2O3 ceramic substrates by the catalyst-free electron beam evaporation method, and the as-deposited films are treated by hydrogen plasma. It is found that the surface morphologies of the films are changed significantly after hydrogen plasma treatment and that the films consist of vertically standing and intersecting nanosheets. A lower turn-on field of 1.2 V/μm and an enhanced current density -0.11 mA/cm2 at 2.47 V/μm are achieved. The low threshold field and the high emission current density are attributed primarily to the unique shape and smaller resistivity of the ZnO nanosheet films.
