期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Characterization and Tribological Behavior of Octadecene,Dodecene and Undecenoic Acid Films on Si Substrate
1
作者 Jinfang ZHOU+ and Shengrong YANGState Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou730000, China 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2005年第5期671-674,共4页
The films of octadecene, dodecene, and undecenoic acid were prepared on H-terminated Si surface in the presence of ultraviolet irradiation. The resulted films were characterized with water-contact angle measurement an... The films of octadecene, dodecene, and undecenoic acid were prepared on H-terminated Si surface in the presence of ultraviolet irradiation. The resulted films were characterized with water-contact angle measurement and infrared spectroscopy. The friction-reducing behavior of the prepared films was examined on a static-dynamic friction coefficient measurement apparatus and on an atomic force microscope. It was found that all the reacted films on the Si substrate showed good friction-reducing ability; especially, the film of the octadecene exhibited the best friction-reducing ability. This was attributed to the transfer of the reacted films onto the counter face with formation of a transfer film on the counterpart surface, which led to the transformation of the sliding between the reacted films and the hard ceramic to fiat between the reacted films and its transfer film on the counterpart surface. The macroscopic and microscopic friction behaviors of the prepared films were dependent on their molecular chain lengths. Thus the octadecene reacted film with the highest degree of ordering arrangement showed the best friction-reducing and antiwear abilities in sliding against Si3N4. 展开更多
关键词 Alkese Reaction film hydrogen-terminated silicon Tribological behavior
下载PDF
Electronic properties of hydrogen- and oxygen-terminated diamond surfaces exposed to the air 被引量:1
2
作者 刘峰斌 汪家道 +1 位作者 陈大融 颜大运 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第5期2041-2047,共7页
The electronic properties of hydrogen- and oxygen-terminated diamond surfaces exposed to the air are investigated by scanning probe microscopy (SPM). The results indicate that for the hydrogen-terminated diamond sur... The electronic properties of hydrogen- and oxygen-terminated diamond surfaces exposed to the air are investigated by scanning probe microscopy (SPM). The results indicate that for the hydrogen-terminated diamond surface a shallow acceptor above the valence-band-maximum (VBM) appears in the band gap. However, the oxygen-terminated diamond film exhibits a high resistivity with a wide band gap. Based on the density-functional-theory, the densities of states, corresponding to molecular adsorbate in hydrogenated and oxygenated diamond (100) surfaces, are studied. The results show that the shallow acceptor in the band gap for the hydrogen-terminated diamond film can be attributed to the interaction between the surface C H bonding orbitals and the adsorbate molecules, while for the oxygen-terminated diamond film, the interaction between the surface C-O bonding orbitals and the adsorbate molecules can induce occupied states in the valence-band. 展开更多
关键词 hydrogen-termination oxygen-termination electronic properties diamond film
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部