Using plasma enhanced chemical vapor deposition（PECVD） at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium(μc-Si1-xGex:H) i-layer.The effects o...Using plasma enhanced chemical vapor deposition（PECVD） at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium(μc-Si1-xGex:H) i-layer.The effects of seeding processes on the growth ofμc-Si1-xGex:H i-layers and the performance ofμc-Si1-xGex:H p-i-n single junction solar cells are investigated.By applying this seeding method,theμc-Si1-xGex:H solar cell shows a significant improvement in short circuit current density(Jsc) and fill factor（FF） with an acceptable performance of blue response as aμc-Si:H solar cell even when the Ge content x increases up to 0.3.Finally,an improved efficiency of 7.05%is achieved for theμc-Si0.7Ge0.3:H solar cell.展开更多
基金supportedbytheNationalBasicResearch Program ofChina(Nos.2011CBA00705,2011CBA00706,2011CBA00707)the Natural Science Foundation of Tianjin(No.12JCQNJC01000)the Fundamental Research Funds for the Central Universities
文摘Using plasma enhanced chemical vapor deposition（PECVD） at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium(μc-Si1-xGex:H) i-layer.The effects of seeding processes on the growth ofμc-Si1-xGex:H i-layers and the performance ofμc-Si1-xGex:H p-i-n single junction solar cells are investigated.By applying this seeding method,theμc-Si1-xGex:H solar cell shows a significant improvement in short circuit current density(Jsc) and fill factor（FF） with an acceptable performance of blue response as aμc-Si:H solar cell even when the Ge content x increases up to 0.3.Finally,an improved efficiency of 7.05%is achieved for theμc-Si0.7Ge0.3:H solar cell.
