An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake te...An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions,thus playing an integral role in defining the resist profile.Both pre-apply bake delay and post exposure delay(PED)affect critical dimension(CD)variation,but PED is more sensitive to contact with airborne contaminants.Different polymers and different photo-acid generators(PAG)are also illustrated in this work.By optimizing the structure and concentration of key components,an ICA resist with good environment stability and excellent lithographic performance was demonstrated.展开更多
Molecular glass resist has been considered as one of the best choices for a new generation of lithography. In this work, a new type of photoaetive compound was obtained by the esterification of tannic acid with 2-diaz...Molecular glass resist has been considered as one of the best choices for a new generation of lithography. In this work, a new type of photoaetive compound was obtained by the esterification of tannic acid with 2-diazo-1- naphthoquinone-4-sulfonyl chloride（2,1,4-DNQ-Cl） and ditertbutyl dicarbonate. The new obtained compound pos- sessed both a photosensitive group of diazonaphthoquinone sulfonate（2,1,4-DNQ） and a group of acidolytic protection. Upon the irradiation of the compound under 365 nm light, the former group was photolyzed and converted into indene carboxylic acid along with a small amount of sulfonic acid, which could lead to the deprotection of the latter group. As a result, a novel i-line molecular glass photoresist was formed with the chemical modification of tannic acid. The expe- rimental results show that the modificated compound had a fair solubility in many organic solvents. The lithographic performance of the resist was evaluated on an i-line exposure system with high photosensitivity and resolution as well.展开更多
文摘An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions,thus playing an integral role in defining the resist profile.Both pre-apply bake delay and post exposure delay(PED)affect critical dimension(CD)variation,but PED is more sensitive to contact with airborne contaminants.Different polymers and different photo-acid generators(PAG)are also illustrated in this work.By optimizing the structure and concentration of key components,an ICA resist with good environment stability and excellent lithographic performance was demonstrated.
文摘Molecular glass resist has been considered as one of the best choices for a new generation of lithography. In this work, a new type of photoaetive compound was obtained by the esterification of tannic acid with 2-diazo-1- naphthoquinone-4-sulfonyl chloride（2,1,4-DNQ-Cl） and ditertbutyl dicarbonate. The new obtained compound pos- sessed both a photosensitive group of diazonaphthoquinone sulfonate（2,1,4-DNQ） and a group of acidolytic protection. Upon the irradiation of the compound under 365 nm light, the former group was photolyzed and converted into indene carboxylic acid along with a small amount of sulfonic acid, which could lead to the deprotection of the latter group. As a result, a novel i-line molecular glass photoresist was formed with the chemical modification of tannic acid. The expe- rimental results show that the modificated compound had a fair solubility in many organic solvents. The lithographic performance of the resist was evaluated on an i-line exposure system with high photosensitivity and resolution as well.
