A two-dimensional thermal-stress model of through-silicon via（TSV） is proposed considering the anisotropic elastic property of the silicon substrate. By using the complex variable approach, the distribution of therm...A two-dimensional thermal-stress model of through-silicon via（TSV） is proposed considering the anisotropic elastic property of the silicon substrate. By using the complex variable approach, the distribution of thermalstress in the substrate can be characterized more accurately. TCAD 3-D simulations are used to verify the model accuracy and well agree with analytical results（＆lt; ±5%）. The proposed thermal-stress model can be integrated into stress-driven design flow for 3-D IC, leading to the more accurate timing analysis considering the thermal-stress effect.展开更多
基金supported by the Aerospace Advanced Manufacturing Technology Research Joint Fund(No.U1537208)
文摘A two-dimensional thermal-stress model of through-silicon via（TSV） is proposed considering the anisotropic elastic property of the silicon substrate. By using the complex variable approach, the distribution of thermalstress in the substrate can be characterized more accurately. TCAD 3-D simulations are used to verify the model accuracy and well agree with analytical results（＆lt; ±5%）. The proposed thermal-stress model can be integrated into stress-driven design flow for 3-D IC, leading to the more accurate timing analysis considering the thermal-stress effect.
