The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic par...The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.展开更多
Large field-of-view（FoV） three-dimensional（3 D） photon-counting imaging is demonstrated with a single-pixel single-photon detector based on a Geiger-mode Si-avalanche photodiode. By removing the collecting lens（C...Large field-of-view（FoV） three-dimensional（3 D） photon-counting imaging is demonstrated with a single-pixel single-photon detector based on a Geiger-mode Si-avalanche photodiode. By removing the collecting lens（CL）before the detector, the FoV is expanded to ±10°. Thanks to the high detection efficiency, the signal-to-noise ratio of the imaging system is as high as 7.8 dB even without the CL when the average output laser pulse energy is about 0.45 pJ/pulse for imaging the targets at a distance of 5 m. A 3 D image overlaid with the reflectivity data is obtained according to the photon-counting time-of-flight measurement and the return photon intensity.展开更多
Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have be...Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have been studied in comparison to those from theγ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviouslyand a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightnessincreases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy,showing the sensor undergoes severe performance degradation. Electron radiation damage is much moresevere than γ radiation damage for the CMOS image sensors. A possible explanation is presented inthis paper.展开更多
In the one-color experiment at 193nm, we studied the photodissociation of Si2+ ions prepared by two-photon ionization using the time-sliced ion velocity map imaging method. The Si+ imaging study shows that Si2+ dissoc...In the one-color experiment at 193nm, we studied the photodissociation of Si2+ ions prepared by two-photon ionization using the time-sliced ion velocity map imaging method. The Si+ imaging study shows that Si2+ dissociation results in two distinct channels: Si(3Pg)+Si+(2Pu) and Si(1D2)+Si+(2Pu). The main channel Si(3Pg)+Si+(2Pu)) is produced by the dissociation of the Si2+ ions in more than one energetically available excited electronic state, which are from the ionization of Si2(v=0-5). Particularly, the dissociation from the vibrationally excited Si2(v=1) shows the strongest signal. In contrast, the minor Si(1D2)+Si+(2Pu) channel is due to an avoided crossing between the two 22Πg states in the same symmetry. It has also been observed the one-photon dissociation of Si2+(X4Σg-) into Si(1D2)+Si+(2Pu) products with a large kinetic energy release.展开更多
In order to determine the structures of Si（111）-√7 √3-In surfaces and to understand their electronic properties, we construct six models of both hexagonal and rectangular types and perform first-principles calcula...In order to determine the structures of Si（111）-√7 √3-In surfaces and to understand their electronic properties, we construct six models of both hexagonal and rectangular types and perform first-principles calculations. Their scanning tunneling microscopic images and work functions are simulated and compared with experimental results. In this way, the hex-H3＇ and rect-T1 models are identified as the experimental configurations for the hexagonal and rectangular types, respectively. The structural evolution mechanism of the In/Si（lll） surface with indium coverage around 1.0 monolayer is discussed. The 4×1 and -√7× √3 phases are suggested to have two different types of evolution mechanisms, consistent with experimental results.展开更多
We apply diferent polarization imaging techniques for cancerous liver tissues,and compare the relative contrasts for difference polarization imaging(DPI),degree of polarization imaging(DOPI)and rotating linear polariz...We apply diferent polarization imaging techniques for cancerous liver tissues,and compare the relative contrasts for difference polarization imaging(DPI),degree of polarization imaging(DOPI)and rotating linear polarization imaging(RLPI).Experimental results show that a number of polarization imaging parameters are capable of differentiating cancerous cells in isotropic liver tisues.To analyze the contrast mechanism of the cancer:-sensitive polarization imaging parameters,we propose a scattering model cont aining two types of spherical scatterers and carry on Monte Carlo simula tions based on this bi-component model.Both the experimental and Monte Carlo simulated results show that the RLPI technique can provide a good imaging contrast of cancerous tissues.The bi-component scattering model provides a useful tool to ana-lyze the contrast mechanism of polarization imaging of cancerous tissues.展开更多
基金the National Natural Science Foundation of China (No.10075029).
文摘The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11774095,11722431 and 11621404the Shanghai Basic Research Project under Grant No 18JC1412200+2 种基金the National Key R&D Program of China under Grant No2016YFB0400904the Program of Introducing Talents of Discipline to Universities under Grant No B12024the Shanghai International Cooperation Project under Grant No 16520710600
文摘Large field-of-view（FoV） three-dimensional（3 D） photon-counting imaging is demonstrated with a single-pixel single-photon detector based on a Geiger-mode Si-avalanche photodiode. By removing the collecting lens（CL）before the detector, the FoV is expanded to ±10°. Thanks to the high detection efficiency, the signal-to-noise ratio of the imaging system is as high as 7.8 dB even without the CL when the average output laser pulse energy is about 0.45 pJ/pulse for imaging the targets at a distance of 5 m. A 3 D image overlaid with the reflectivity data is obtained according to the photon-counting time-of-flight measurement and the return photon intensity.
基金This project is financially supported by the Narional Natural Science Foundation of China(Nos 10375034 and 10075029) and the Basic Research Foundation of Tsinghua University (No. JC2002058).
文摘Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have been studied in comparison to those from theγ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviouslyand a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightnessincreases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy,showing the sensor undergoes severe performance degradation. Electron radiation damage is much moresevere than γ radiation damage for the CMOS image sensors. A possible explanation is presented inthis paper.
基金supported by the National Natural Science Foundation of China (No.21673047, No.21327901, and No.21322309)the Shanghai Key Laboratory Foundation of Molecular Catalysis and Innovative Materialsthe Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
文摘In the one-color experiment at 193nm, we studied the photodissociation of Si2+ ions prepared by two-photon ionization using the time-sliced ion velocity map imaging method. The Si+ imaging study shows that Si2+ dissociation results in two distinct channels: Si(3Pg)+Si+(2Pu) and Si(1D2)+Si+(2Pu). The main channel Si(3Pg)+Si+(2Pu)) is produced by the dissociation of the Si2+ ions in more than one energetically available excited electronic state, which are from the ionization of Si2(v=0-5). Particularly, the dissociation from the vibrationally excited Si2(v=1) shows the strongest signal. In contrast, the minor Si(1D2)+Si+(2Pu) channel is due to an avoided crossing between the two 22Πg states in the same symmetry. It has also been observed the one-photon dissociation of Si2+(X4Σg-) into Si(1D2)+Si+(2Pu) products with a large kinetic energy release.
基金V. ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China （No.20603032, No.20733004, No.21121003, No.91021004, No.20933006）, the National Key Basic Research Program （No.2011CB921400）, the Foundation of National Excellent Doctoral Dissertation of China （No.200736）, the Fundamental Research Funds for the Central Universities （No.WK2340000006 and No.WK2060140005）, and the Shanghai Supercompurer Center, the USTC-HP HPC Project, and the SCCAS.
文摘In order to determine the structures of Si（111）-√7 √3-In surfaces and to understand their electronic properties, we construct six models of both hexagonal and rectangular types and perform first-principles calculations. Their scanning tunneling microscopic images and work functions are simulated and compared with experimental results. In this way, the hex-H3＇ and rect-T1 models are identified as the experimental configurations for the hexagonal and rectangular types, respectively. The structural evolution mechanism of the In/Si（lll） surface with indium coverage around 1.0 monolayer is discussed. The 4×1 and -√7× √3 phases are suggested to have two different types of evolution mechanisms, consistent with experimental results.
基金supported by the National Natural Science Foundation of China(NSFC)Grants No.10974114,11174178,41106034Open Fund of Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes,Jinan University.
文摘We apply diferent polarization imaging techniques for cancerous liver tissues,and compare the relative contrasts for difference polarization imaging(DPI),degree of polarization imaging(DOPI)and rotating linear polarization imaging(RLPI).Experimental results show that a number of polarization imaging parameters are capable of differentiating cancerous cells in isotropic liver tisues.To analyze the contrast mechanism of the cancer:-sensitive polarization imaging parameters,we propose a scattering model cont aining two types of spherical scatterers and carry on Monte Carlo simula tions based on this bi-component model.Both the experimental and Monte Carlo simulated results show that the RLPI technique can provide a good imaging contrast of cancerous tissues.The bi-component scattering model provides a useful tool to ana-lyze the contrast mechanism of polarization imaging of cancerous tissues.
