An explanation of the redistribution of impurity atoms such as Al, Si, Mn and Cu in pure nickel during low speed laser melting is made by one-dimensional analysis model for heat transfer. The solid-liquid interface so...An explanation of the redistribution of impurity atoms such as Al, Si, Mn and Cu in pure nickel during low speed laser melting is made by one-dimensional analysis model for heat transfer. The solid-liquid interface solute redistribution seems to be the principal cause that makes the impurity atoms redistribute in the depth direction. The diffusion of impurity atoms from low to high temperature zones and their surface selective evaporation are believed to be noticeably contributed to the redistribution.展开更多
Grain boundaries(GBs)have critical influences on the stability and properties of various materials.In this study,first-principles calculations were performed to determine the effects of four metallic impurities(Ni,Al,...Grain boundaries(GBs)have critical influences on the stability and properties of various materials.In this study,first-principles calculations were performed to determine the effects of four metallic impurities(Ni,Al,Bi,and Pb)and three nonmetallic impurities(H,O,and N)on the GBs of silicon carbide(SiC),using the ∑5(210)GBs as models.The GB energy and segregation energy(SE)were calculated to identify the effects of impurities on the GB stability.Electronic interactions considerably influenced the bonding effects of SiC.The formation of weak bonds resulted in the corrosion and embrittlement of GBs.The co-segregation of Bi,Pb,and O was also investigated in detail.展开更多
The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping,...The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping, the so-called “low-temperature doping” of semiconductors. This method of doping is based upon the diffusion process which is carried out in stages by gradually increasing temperature ranging from room temperature to the diffusion temperature.展开更多
文摘An explanation of the redistribution of impurity atoms such as Al, Si, Mn and Cu in pure nickel during low speed laser melting is made by one-dimensional analysis model for heat transfer. The solid-liquid interface solute redistribution seems to be the principal cause that makes the impurity atoms redistribute in the depth direction. The diffusion of impurity atoms from low to high temperature zones and their surface selective evaporation are believed to be noticeably contributed to the redistribution.
基金supported by the National Natural Science Foundation of China(Nos.11832019,11472313,11572355,and 11705264)the Science and Technology Plan Project of Guangdong Province(No.2020A0505020005)+2 种基金the Fundamental Research Funds for the Central Universities(No.19lgpy298)the State Key Laboratory of Powder MetallurgyCentral South University,Changsha,China。
文摘Grain boundaries(GBs)have critical influences on the stability and properties of various materials.In this study,first-principles calculations were performed to determine the effects of four metallic impurities(Ni,Al,Bi,and Pb)and three nonmetallic impurities(H,O,and N)on the GBs of silicon carbide(SiC),using the ∑5(210)GBs as models.The GB energy and segregation energy(SE)were calculated to identify the effects of impurities on the GB stability.Electronic interactions considerably influenced the bonding effects of SiC.The formation of weak bonds resulted in the corrosion and embrittlement of GBs.The co-segregation of Bi,Pb,and O was also investigated in detail.
文摘The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping, the so-called “low-temperature doping” of semiconductors. This method of doping is based upon the diffusion process which is carried out in stages by gradually increasing temperature ranging from room temperature to the diffusion temperature.
