In-situ interfacial passivation and self-adaptability synergistically stabilizing all-solid-state lithium metal batteries

The function of solid electrolytes and the composition of solid electrolyte interphase(SEI)are highly significant for inhibiting the growth of Li dendrites.Herein,we report an in-situ interfacial passivation combined with self-adaptability strategy to reinforce Li_(0.33)La_(0.557)TiO_(3)(LLTO)-based solid-state batteries.Specifically,a functional SEI enriched with LiF/Li_(3)PO_(4) is formed by in-situ electrochemical conversion,which is greatly beneficial to improving interface compatibility and enhancing ion transport.While the polarized dielectric BaTiO_(3)-polyamic acid(BTO-PAA,BP)film greatly improves the Li-ion transport kinetics and homogenizes the Li deposition.As expected,the resulting electrolyte offers considerable ionic conductivity at room temperature(4.3 x 10~(-4)S cm^(-1))and appreciable electrochemical decomposition voltage(5.23 V)after electrochemical passivation.For Li-LiFePO_(4) batteries,it shows a high specific capacity of 153 mA h g^(-1)at 0.2C after 100 cycles and a long-term durability of 115 mA h g^(-1)at 1.0 C after 800 cycles.Additionally,a stable Li plating/stripping can be achieved for more than 900 h at 0.5 mA cm^(-2).The stabilization mechanisms are elucidated by ex-situ XRD,ex-situ XPS,and ex-situ FTIR techniques,and the corresponding results reveal that the interfacial passivation combined with polarization effect is an effective strategy for improving the electrochemical performance.The present study provides a deeper insight into the dynamic adjustment of electrode-electrolyte interfacial for solid-state lithium batteries.

Nonlinear Doping, Chemical Passivation and Photoluminescence Mechanism in Water-Soluble Silicon Quantum Dots by Mechanochemical Synthesis

A series of boron- and phosphorus-doped silicon wafers are used to prepare a series of doped silicon nanocrystals （nc-Si） by high-energy ball milling with carboxylic acid-terminated surface. The sizes of the nc-Si samples are demonstrated to be 〈 S nm. The doping levels of the nc-Si are found to be nonlinearly dependent on the original doping level of the wafers by x-ray photoelectron spectroscopy measurement. It is found that the nonlinear doping process will lead to the nonlinear chemical passivation and photoluminescence （I3L） intensity evolution. The doping, chemical passivation and PL mechanisms of the doped nc-Si samples prepared by mechanochemical synthesis are analyzed in detail.

In-situ Chemical Age of the Sandstone-hosted Uranium Deposit in Ningdong Area on the Western Margin of the Ordos Basin, North China

Objective The Ordos Basin located in the westem part of the North China Craton bears various energy resources such as oil, gas, coal and uranium. It is one of the richest uranium-bearing basins in China. Since the discovery of the large-scale Dongsheng, Hangjinqi and Daying uranium deposits in the north of the Ordos Basin, a new breakthrough of uranium exploration has been achieved in the Ningdong area （eastern Ningxia） on the western margin of the Ordos Basin （WMOB） in the past two years （Wang Feifei et al., 2017）.

In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition（MOCVD） system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses（tensile and compressive） during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.

<i>In-Situ</i>Monitoring of Chemical Vapor Deposition from Trichlorosilane Gas and Monomethylsilane Gas Using Langasite Crystal Microbalance

Using the langasite crystal microbalance (LCM), the trends in film thickness produced by means of the chemical vapor deposition using trichlorosilane gas, monomethylsilane gas and their mixed gas were observed at 600?C and evaluated by comparison with the information from a transmission electron microscope (TEM). The crystalline silicon film thickness from trichlorosilane gas was comparable to that of an amorphous silicon carbide film from monomethylsilane gas. The film obtained from the gas mixture was amorphous and was the thinnest in this study. Because the thickness trend obtained by the LCM agreed with that by the TEM, the LCM is shown to be a convenient evaluation tool for the behavior of various film deposition.

Electrochemical characteristic of chemical-mechanical polishing of copper with oxide passive film

Electrochemical behavior of chemical mechanical polishing of copper with oxide passive film was studied by electrochemical measurement technologies. Dependences of polarization curves and electrochemical parameters, the rate of formation or removal of passive film of copper on film modifier KClO 3 were investigated. The rules of dependences of corrosion potentials and corrosion current densities on polishing pressure and rotation rate were obtained. It is discovered that the rates of formation and removal of passive film of copper are enhanced, while the polishing pressure and rotation rate are reduced. The experiments show that the CMP processes decrease Tafel slope, increase electron transfer coefficient of anode reaction and decrease the activation energy of corrosion reaction of copper, thereby the corrosion processes are accelerated. The results indicate that CMP slurry recipe, which is composed of NaAc NaOH medium, using KClO 3 as passive film modifier and nano sized γ Al 2O 3 as abrasive, is feasible and reasonable. The technological conditions are 100 r/min, 16 kPa.

Chemical leaching mechanism of chalcopyrite with difference mineralization

This paper presents the effect of mineralization on chalcopyrite chemical leaching in very simple H2SO4 solution systems at pH 1.0, with 5 % chalcopyrite con- centrate at 65 ~C. The copper extractions after 12 days leaching of marine volcanic and porphyry chalcopyrite were 85.7 and 66.6 %, respectively. It was found that sulphur element formed on the surface of two samples as a result of XRD and SEM-EDAX, which was very porous that did not inhibit chemical leaching reaction. Meanwhile, （Cu, Fe）12As4S13 formed on the surface of porphyry type chalcopyrite, which may cause low leaching ratio of por- phyry type chalcopyrite as passivation. （Cu, Fe）12As4S13 may be one kind of the polysulphide compounds.

Geochemical characteristics of Holocene sediments from Chuadanga district, Bangladesh: Implications for weathering, climate, redox conditions, provenance and tectonic setting

The present research deals with the geochemical characteristics of the Holocene sediments from Alamdanga area, Chuadanga district, Bangladesh. Main goals of the study are to delineate source rock characteristics, degree of chemical weathering and sorting processes and behavior of redox conditions during deposition of the sediments. Geochemical characteristics of the sediments show comparatively a wide variation in accordance with stratigraphy in their major element contents(e.g. Si O2 69.46–82.13, Al2O3 2.28–8.88 in wt%), reflecting the distinctive provenance and in part an unstable period in terms of tectonic activity. Geochemical classification of the sediments shows mostly sub-arkose with few sub-litharenites. Some major and trace elements display comprehensible correlation with Al2O3 confirming their possible hydraulic fractionation. The chemical index of alteration(CIA*), W* index, index of compositional variability(ICV), plagioclase index of alteration(PIA*) values and the ratio of Si O2/Al2O3, suggest low degrees of chemical weathering in the source areas as well as immature to moderately mature the sediments. The sediments suggest semi-arid climatic trends within oxic deltaic depositional conditions during the Holocene, at 3–12 ka. Whole rock geochemistry and discrimination diagrams demonstrate the continental signature derivatives, which might have been derived from the felsic to intermediate igneous rocks(granitic plutonic rocks) as well as from quartzose sedimentary/metamorphic provenance. These typical sources are present in a vast region of the Himalayan belt and catchment areas of Ganges. The tectonic setting of the sediments demarcates typically passive margin with slightly continental arc system.

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.

利用电化学和显色检测法分级评估316L不锈钢钝化膜完整性

针对核电和航天工程不锈钢设备服役在高温高盐海洋环境中钝化和损伤的质检评估,提出显色检测图像分析钝化膜完整性分级的方法。以不同钝化及其损伤状态的316L不锈钢为研究对象,通过显色检测的红色色度图像分析与电化学腐蚀行为检测,建立显色色度与耐蚀性的关系,并获得分级范围。结果表明,显色色度随钝化膜损伤程度增加而增大,随自钝化时间的延长而减小;二次局部损伤在直方图中具有双峰特征;色度百分比和面积百分比呈现双对数线性二阶段特征;动电位极化和阻抗表明,点蚀电位和界面反应阻抗随损伤程度的增加而减小;耐蚀性随显色色度的增加而下降;最终获得了316L不锈钢钝化膜完整性的三个色度等级范围。这可为不锈钢钝化膜质检分级评估提供理论基础。

脂质体的制备方法及应用的研究进展

目的综述脂质体的制备方法及应用的研究进展,旨在为脂质体的进一步研究与开发新功能提供思路。方法查阅近年来国内外关于脂质体研究的相关文献,并对其进行整理、归纳与总结。结果脂质体作为近几十年发现的一种高效载体,可由人工合成的磷脂化合物来制备,且制备方法日益完善,可根据药物的不同特性对脂质体进行结构修饰,在医药、基因工程、食品、化妆品等领域起着越来越重要的作用。结论脂质体在药物治疗及生活中有着重要的研究意义与应用前景。

Influences of chemical reactions on polysulfide reduction reaction process on promotor surface in Li-S batteries

Polar promotors have been proven effective in catalyzing the polysulfide(PS)reduction reaction(PSRR)process in lithium-sulfur(Li-S)batteries.However,the promotor surface tends to be poisoned due to the accumulation of insoluble discharging products of lithium disulfide(Li_(2)S_(2))and lithium sulfide(Li_(2)S)during Li-S battery operation.Herein,we investigate the detailed PSRR mechanism on the surface of manganese sulfides(MnS)as a representative promoter by performing in-situ Raman mapping measurements.The catalytic ability of MnS enables thorough electrochemical reduction of PSs to Li_(2)S_(2) and Li_(2)S on the MnS surface.The generated Li_(2)S_(2) and Li_(2)S then adsorb the dissolved PSs via chemical reactions among sulfur species during the subsequent PSRR process.This phenomenon mitigates promotor poisoning and continuously improves the reversible capacity.Consequently,the assembled Li-S cell demonstrates excellent electrochemical performance after introducing a conductive interlayer containing a thin piece of carbon nanotube film and MnS promotors.

High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate

The performance of red InP and blue ZnTeSe-based quantum dots(QDs)and corresponding QD light emitting diodes(QLEDs)has already been improved significantly,whose external quantum efficiencies(EQEs)and luminances have exceeded 20%and 80000 cd m-2,respectively.However,the inferior performance of the green InP-based device hinders the commercialization of full-color Cd-free QLED technology.The ease of oxidation of the highly reactive InP cores leads to high non-radiative recombination and poor photoluminescence quantum yield(PL QY)of the InP-based core/shell QDs,limiting the performance of the relevant QLEDs.Here,we proposed a fluoride-free synthesis strategy to in-situ passivate the InP cores,in which zinc myristate reacted with phosphine dangling bonds to form Zn–P protective layer and protect InP cores from the water and oxygen in the environment.The resultant InP/ZnSe/ZnS core/shell QDs demonstrated a high PL QY of 91%.The corresponding green-emitting electroluminescence devices exhibited a maximum EQE of 12.74%,along with a luminance of over 175000 cd m^(-2)and a long T50@100 cd m^(-2)lifetime of over 20000 h.

管式PECVD制备原位掺杂多晶硅的性能研究

报道了管式等离子体增强化学气相沉积(PECVD)的各项沉积参数对硅太阳电池重掺杂多晶硅钝化接触(SiO_(x)/Poly-Si(n^(+)))的影响。TOPCon太阳电池的掺杂多晶硅是通过对沉积的非晶硅高温晶化来实现的,通过改变PECVD的沉积温度、Ar和PH_(3)的流量、沉积功率等沉积参数,可获得不同厚度、结晶度和掺杂浓度的掺杂非晶硅(a-Si(n^(+)))薄膜,然后通过高温退火得到不同的Poly-Si(n^(+))薄膜,从而导致SiO_(x)/Poly-Si(n^(+))钝化接触在钝化质量和载流子选择性等方面的不同特性。最后在沉积温度480℃、Ar流量8 L/min、PH_(3)流量0.8 L/min、沉积功率12000 W、退火温度920℃的条件下获得最佳双面SiO_(x)/Poly-Si(n^(+))/SiN_(x)钝化接触,少子寿命达到6445μs,隐含开路电压(iV_(oc))达到742.7 mV以上,单面饱和电流密度J_(0)低至4.2 fA/cm^(2)。

重金属污染土壤化学钝化修复材料研究进展

土壤重金属污染严重威胁着人类的健康和生存环境。一直以来,由于土壤重金属污染的潜伏性、滞后性和复杂性,使之成为环境治理的重大挑战。在诸多土壤重金属污染修复治理技术中,化学钝化修复技术无疑是具有极大研究价值和实际应用价值的修复治理技术手段之一。本文综述了近些年来各类无机、有机、无机-有机复合以及新型化学钝化修复材料的研究进展,为进一步发展重金属土壤污染治理领域化学钝化修复材料的研究提供参考。

硫化亚铁钝化清洗剂在芳烃重整装置中的应用

在原油的加工、炼制和储存过程中,都会产生容易自燃的硫化亚铁。在设备检修过程中,当设备处于开放状态时,附着于设备表面的硫化亚铁及油垢就会与空气中的氧气接触,发生强烈的化学反应造成自燃。针对硫化亚铁的自燃问题,研发了一种复合型硫化亚铁钝化清洗剂,并在芳烃重整装置预加氢汽提塔及回流罐中实现了工业应用。装置钝化清洗情况及废液排放情况表明,所研发的硫化亚铁钝化清洗剂不仅对硫化亚铁垢层具有较好的清洗作用,而且能够满足安全环保要求。通过对钝化清洗剂的生产及清洗过程进行总结,明确了下一步的研发方向,并提出了合理化建议。

油基清洗与除臭钝化技术在千万吨蒸馏装置停工过程中的应用

通过化学清洗及除臭钝化技术在千万吨常减压装置停工过程中的实际应用,论证了大型炼化装置在停工过程采用“油基化学清洗+热水撇油+除臭+钝化”技术,实现安全、环保、优质停工的可能性。同时通过与传统停工技术对比、结合实际应用经验,提出了详细的复合型停工化学清洗方案,有利于大型炼化装置停工参考和借鉴。

Full-scale chemical and field-effect passivation:21.52% efficiency of stable MAPbI_(3) solar cells via benzenamine modification

Organic-inorganic metal halide perovskite solar cells have achieved high efficiency of 25.5%.Finding an effective means to suppress the formation of traps and correlate stability losses are thought to be a promising route for further increasing the photovoltaic performance and commercialization potential of perovskite photovoltaic devices.Herein,we report a facile passivation model,which uses a multi-functional organic molecule to simultaneously realize the chemical passivation and field-effect passivation for the perovskite film by an upgraded anti-solvent coating method,which reduces the trap states density of the perovskite,improves interface charge transfer,and thus promotes device performance.In addition,the hydrophobic groups of the molecules can form a moisture-repelling barrier on the perovskite grains,which apparently promotes the humidity stability of the solar cells.Therefore,the optimal power conversion efficiency(PCE)of perovskite solar cells after synergistic passivation reaches 21.52%,and it can still retain 95%of the original PCE when stored in-40%humidity for 30 days.Our findings extend the scope for traps passivation to further promote both the photovoltaic performance and the stability of the perovskite solar cells.

Direct Determination of Trace Impurities in High Purity Neodymium after In-Situ Analyte-Matrix Separation by Fluorination Assisted ETV-ICP-AES

Using PTFE as a chemical modifier, a method for the determination of trace impurities in high purity Nd_2O_3 by in-situ separation and electrothermal vaporization-inductively coupled plasma-atomic emission spectrometry (ETV-ICP-AES) was developed. The analyte-matrix separation and the temperature program of graphite furnace were investigated and optimized. The solid samples were directly introduced into graphite furnace in the form of slurry, where selective volatilization between the matrix and the analytes took place. The Nd matrix was retained in the graphite furnace during the evaporation step, while the trace analyte impurities were vaporized and removed. As a result, the matrix interference that is serious without the modifier is suppressed effectively. The achievable detection limits are (μg·g^(-1)): Ti 0.15, Mn 0.15, Ni 0.20, Co 0.54, respectively. The proposed method was applied to direct determination of trace impurities in high purity Nd_2O_3 with satisfactory results.

Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire

Ultrasonic-assisted chemical mechanical polishing(UA-CMP)can greatly improve the sapphire material removal and surface quality,but its polishing mechanism is still unclear.This paper proposed a novel model of material removal rate(MRR)to explore the mechanism of sapphire UA-CMP.It contains two modes,namely two-body wear and abrasive-impact.Furthermore,the atomic force microscopy(AFM)in-situ study,computational fluid dynamics(CFD)simulation,and polishing experiments were conducted to verify the model and reveal the polishing mechanism.In the AFM in-situ studies,the tip scratched the reaction layer on the sapphire surface.The pit with a 0.22 nm depth is the evidence of two-body wear.The CFD simulation showed that abrasives could be driven by the ultrasonic vibration to impact the sapphire surface at high frequencies.The maximum total velocity and the air volume fraction(AVF)in the central area increased from 0.26 to 0.55 m/s and 20%to 49%,respectively,with the rising amplitudes of 1–3μm.However,the maximum total velocity rose slightly from 0.33 to 0.42 m/s,and the AVF was nearly unchanged under 40–80 r/min.It indicated that the ultrasonic energy has great effects on the abrasive-impact mode.The UA-CMP experimental results exhibited that there was 63.7%improvement in MRR when the polishing velocities rose from 40 to 80 r/min.The roughness of the polished sapphire surface was R_(a)=0.07 nm.It identified that the higher speed achieved greater MRR mainly through the two-body wear mode.This study is beneficial to further understanding the UA-CMP mechanism and promoting the development of UA-CMP technology.