Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications

Control of the electronic parameters on a novel metal–oxide–semiconductor（MOS）diode by indium doping incorporation is emphasized and investigated.The electronic parameters,such as ideality factor,barrier height（BH）,series resistance,and charge carrier density are extracted from the current–voltage（I–V）and the capacitance–voltage（C–V）characteristics.The properties of the MOS diode based on 4%,6% and 8% indium doped tin oxide are largely studied.The Ag/SnO2/nSi/Au MOS diode is fabricated by spray pyrolysis route,at 300℃ from the In-doped SnO2layer.This was grown onto n-type silicon and metallic（Au）contacts which were made by thermal evaporation under a vacuum@10^-5 Torr and having a thickness of 120 nm and a diameter of 1 mm.Determined by the Cheung-Cheung approximation method,the series resistance increases（334–534Ω）with the In doping level while the barrier height（BH）remains constant around 0.57 V.The Norde calculation technique gives a similar BH value of 0.69 V but the series resistance reaches higher values of 5500Ω.The indium doping level influences on the characteristics of Ag/SnO2：In/Si/Au MOS diode while the 4% indium level causes the capacitance inversion and the device turns into p-type material.

Significant improvement of ZnS film electrical and optical performance by indium incorporation

Abstract： This paper reports a new material, indium-doped ZnS （ZnS：In） film, which is fabricated for the first time to improve its electrical and optical performance. By electron beam evaporation technology and the optimized annealing treatment, high quality ZnS：In film is prepared. XRD indicates that the incorporation of 6 at.% indium atoms into ZnS film causes little lattice deformation. The AFM results imply that large sized particles are compactly dispersed in the ZnS：In layer and results in an unsmooth surface. Electrical and optical property tests show that the resistivity of ZnS film is greatly decreased to 4.46×10-2 Ω.cm and the optical transmittance is improved to 85% in the visible region. Comparing with the results in other literatures, significant progress in electrical/optical performance has been made in this paper.

Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys

In order to investigate the influence of compressive strain on indium incorporation in In Al N and In Ga N ternary nitrides, In Al N/Ga N heterostructures and In Ga N films were grown by metal–organic chemical vapor deposition. For the heterostructures, different compressive strains are produced by Ga N buffer layers grown on unpatterned and patterned sapphire substrates thanks to the distinct growth mode; while for the In Ga N films, compressive strains are changed by employing Al Ga N templates with different aluminum compositions. By various characterization methods, we find that the compressive strain will hamper the indium incorporation in both In Al N and In Ga N. Furthermore, compressive strain is conducive to suppress the non-uniform distribution of indium in In Ga N ternary alloys.

Effect of In_x Ga_(1-x )N “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.