An InYO 3 photocatalyst was prepared through a precipitation method and used for the degradation of molasses fermentation wastewater. The InYO 3 photocatalyst characterized by X-ray diffraction （XRD）, UV-Vis diffuse...An InYO 3 photocatalyst was prepared through a precipitation method and used for the degradation of molasses fermentation wastewater. The InYO 3 photocatalyst characterized by X-ray diffraction （XRD）, UV-Vis diffuse reflectance spectroscopy, surface area and porosimetry. Energy band structures and density of states were achieved using the Cambridge Serial Total Energy package （CASTEP）. The results indicated that the photodegradation of molasses fermentation wastewater was significantly enhanced in the presence of InYO 3 when compared with PbWO 4 . The calcination temperature was found to have a significant effect on the photocatalytic activity of InYO 3 . Specifically, InYO 3 calcined at 700°C had a considerably larger surface area and lower reflectance intensity and showed higher photocatalytic activity. The mathematical simulation results indicated that InYO 3 is a direct band gap semiconductor, and its conduction band is composed of In 5p and Y 4d orbitals, whereas its valence band is composed of O 2p and In 5s orbitals.展开更多
基金supported by the National Natural Science Foundation of China (No. 21006013)the Scientific Research Foundation of Guangxi University (No. XBZ090780)
文摘An InYO 3 photocatalyst was prepared through a precipitation method and used for the degradation of molasses fermentation wastewater. The InYO 3 photocatalyst characterized by X-ray diffraction （XRD）, UV-Vis diffuse reflectance spectroscopy, surface area and porosimetry. Energy band structures and density of states were achieved using the Cambridge Serial Total Energy package （CASTEP）. The results indicated that the photodegradation of molasses fermentation wastewater was significantly enhanced in the presence of InYO 3 when compared with PbWO 4 . The calcination temperature was found to have a significant effect on the photocatalytic activity of InYO 3 . Specifically, InYO 3 calcined at 700°C had a considerably larger surface area and lower reflectance intensity and showed higher photocatalytic activity. The mathematical simulation results indicated that InYO 3 is a direct band gap semiconductor, and its conduction band is composed of In 5p and Y 4d orbitals, whereas its valence band is composed of O 2p and In 5s orbitals.
