The time and temperature dependence of threshold voltage shift under positive-bias stress（PBS） and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide（a-IGZO） thin-film transisto...The time and temperature dependence of threshold voltage shift under positive-bias stress（PBS） and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide（a-IGZO） thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.展开更多
As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this w...As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.展开更多
Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-...Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-metal metal-oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction. The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the back-channel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device （L=2 μm）. It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region.展开更多
Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically investigated.Density of ox...Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically investigated.Density of oxygen vacancy(V O)defects of E-mode TFTs is relatively small,in which formation of the photo-induced metastable defects is thermally activated,and the activation energy(E a)decreases continuously with increasing light-intensity.Density of V O defects of D-mode TFTs is much larger,in which the formation of photo-induced metastable defects is found to be spontaneous instead of thermally activated.Furthermore,for the first time it is found that a threshold dose of light-exposure is required to form fully developed photo-induced metastable defects.Under low light-exposure below the threshold,only a low PPC barrier is formed and the PPC recovery is fast.With increasing the light-exposure to the threshold,the lattice relaxation of metal cations adjacent to the doubly ionized oxygen vacancies(V O^2+)is fully developed,and the PPC barrier increases to∼0.25 eV,which remains basically unchanged under higher light-exposure.Based on the density of V O defects in the channel and the condition of light illumination,a unified model of formation of photo-induced metastable defects in a-IGZO TFTs is proposed to explain the experimental observations.展开更多
基金Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900 and 2011CB922100)the Priority Academic Program Development of Jiangsu Higher Education Institutions,China
文摘The time and temperature dependence of threshold voltage shift under positive-bias stress（PBS） and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide（a-IGZO） thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.
基金supported by National Key Research and Development Program under Grant No.2022YFB3607100Shenzhen Research Programs under Grant Nos.JCYJ20200109140601691,JCYJ20190808154803565,SGDX20201103095607022,SGDX20211123145404006,and GXWD20201231165807007-20200807025846001。
文摘As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.
基金Project supported by the Science and Technology Program of Suzhou City,China(Grant No.SYG201538)the National Natural Science Foundation of China(Grant No.61574096)
文摘Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-metal metal-oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction. The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the back-channel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device （L=2 μm）. It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region.
基金Project supported in part by the National Natural Science Foundation of China(Grant Nos.61974101 and 61971299)the State Key Laboratory of ASIC and System,Fudan University(Grant No.2019KF007)+2 种基金the Natural Science Foundation of Jiangsu Province,China(Grant No.SBK2020021406)the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant No.19KJB510058)the Suzhou Science and Technology Bureau(Grant No.SYG201933).
文摘Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically investigated.Density of oxygen vacancy(V O)defects of E-mode TFTs is relatively small,in which formation of the photo-induced metastable defects is thermally activated,and the activation energy(E a)decreases continuously with increasing light-intensity.Density of V O defects of D-mode TFTs is much larger,in which the formation of photo-induced metastable defects is found to be spontaneous instead of thermally activated.Furthermore,for the first time it is found that a threshold dose of light-exposure is required to form fully developed photo-induced metastable defects.Under low light-exposure below the threshold,only a low PPC barrier is formed and the PPC recovery is fast.With increasing the light-exposure to the threshold,the lattice relaxation of metal cations adjacent to the doubly ionized oxygen vacancies(V O^2+)is fully developed,and the PPC barrier increases to∼0.25 eV,which remains basically unchanged under higher light-exposure.Based on the density of V O defects in the channel and the condition of light illumination,a unified model of formation of photo-induced metastable defects in a-IGZO TFTs is proposed to explain the experimental observations.
