Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperat...Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in (400), (440) directions.展开更多
The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non...The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N+-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N+-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.展开更多
This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LI...This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LIPSSs exhibited good properties as nanowires,with a resistivity almost equal to that of the initial ITO film.By changing the laser fluence,the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of±10%.Furthermore,the average transmittance of the ITO films with regular LIPSSs in the range of 1200-2000 nm was improved from 21%to 60%.The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices-particularly in the near-infrared band.展开更多
Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 P...Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ~78% at wavelength of 400~700 nm have been achieved for the films on polyester at room temperature.展开更多
From a basic solution containing celyltrimethylammonium cations as the template, thin film of mesoporous MCM-41 has been grown on the surface of a pre-treated indium-tin-oxide conducting glass substrate. The channel a...From a basic solution containing celyltrimethylammonium cations as the template, thin film of mesoporous MCM-41 has been grown on the surface of a pre-treated indium-tin-oxide conducting glass substrate. The channel axis of the film is oriented parallel with the surface plane of the substrate, and the film is stable after careful removal of template in vacuum.展开更多
Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance o...Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.展开更多
In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were ...In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.展开更多
ITO (indium oxide doped with tin) thin films were deposited on glass substrates by using ITO pellet with a composition of w(In2O3)=90% and w(SnO2)=10% by electron beam evaporated with End-Hall ion source assiste...ITO (indium oxide doped with tin) thin films were deposited on glass substrates by using ITO pellet with a composition of w(In2O3)=90% and w(SnO2)=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.展开更多
Indium-tin-oxide(ITO)films were prepared on the quarts glass by sol-gel technique.Effects of different heat treatment temperatures and cooling methods on the morphological,optical and electrical properties of ITO film...Indium-tin-oxide(ITO)films were prepared on the quarts glass by sol-gel technique.Effects of different heat treatment temperatures and cooling methods on the morphological,optical and electrical properties of ITO films were measured by TG/DTA, IR,XRD,SEM,UV-VIS spectrometer and four-probe apparatus.It is found that the crystallized ITO films exhibit a polycrystalline cubic bixbyite structure.The heat treatment process has significant effects on the morphological,optical and electrical properties of ITO films.Elevating the heat treatment temperature can perfect the crystallization process of ITO films,therefore the optical and electrical properties of ITO films are improved.But the further increasing of heat treatment temperature results in the increment of ITO films’resistivity.Compared with ITO films elaborated by furnace cooling,those prepared through air cooling have following characteristics as obviously decreased crystalline size,deeply declined porosity,more compact micro-morphology,improved electrical property and slightly decreased optical transmission.展开更多
High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure. Adhesion and electro-optical properties of ITO films w...High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure. Adhesion and electro-optical properties of ITO films were investigated as a function of Ar partial pressure. The sputtering conditions provide very uniform ITO films with high transparency (>85% in 400-760 nm spectra) and low electrical resistivity (1.408×10-3-1.956×10-3 Ω·cm). Scratch test experiments indicate that there is a good adhesion property between ITO films and PET substrate, the critical characteristic load increases from 16.5 to 23.2 N with increasing Ar sputtering pressure from 0.2 to 1.4 Pa.展开更多
In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation method on float glass substrates at room temperature (RT). The surface morphology and dynamic scaling behavior of the films w...In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation method on float glass substrates at room temperature (RT). The surface morphology and dynamic scaling behavior of the films were studied by atomic force microscopy (AFM). It was found that average surface roughness values decreased as the film thickness increased from 100 nm to 350 nm. Fractal geometry and statistical physics techniques have been used to study a variety of irregular films within a common framework of the variance thickness. The Hurst exponent H and growth exponent ? for ITO thin films were determined to be 0.73 ? 0.01 and 0.078, respectively. Based on these results, we suggest that the growth of ITO thin films can be described by the combination of the Edwards-Wilkinson equation and Mullins diffusion equation.展开更多
MBE growth of ZnSx Se1-x thin films on ITO coated glass substrates were carried out using ZnS and Se Sources with the substrate temperature ranging from 270℃ to 330℃.The XRD θ/2θ spectra resulted from these films ...MBE growth of ZnSx Se1-x thin films on ITO coated glass substrates were carried out using ZnS and Se Sources with the substrate temperature ranging from 270℃ to 330℃.The XRD θ/2θ spectra resulted from these films indicated that the as-grown polycrystalline ZnSx Se1-x thin films had a preferred orientation along the (111) planes.The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence,with the optimized temperature being about 290℃.Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence.Hing qual-ity ZnSx Se1-x thin film growm at the optimized temperature had the smoothest surface with lowest RMS valus of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure.展开更多
A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of dis...A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.展开更多
The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indiumtin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage c...The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indiumtin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence(EL) efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.展开更多
基金supported by the National Eleventh Five-Year Pre-research Project of China (No.51302060203)
文摘Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in (400), (440) directions.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61534008,61376081,and 61404157)the Application Foundation of Suzhou,China(Grant No.SYG201437)
文摘The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N+-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N+-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.
基金We are grateful for financial supports from the Ministry of Science and Technology of China(Grant No.2021YFA1401100)National Natural Science Foundation of China(Grant Nos.12074123,11804227,91950112),and the Foundation of‘Manufacturing beyond limits’of Shanghai.
文摘This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LIPSSs exhibited good properties as nanowires,with a resistivity almost equal to that of the initial ITO film.By changing the laser fluence,the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of±10%.Furthermore,the average transmittance of the ITO films with regular LIPSSs in the range of 1200-2000 nm was improved from 21%to 60%.The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices-particularly in the near-infrared band.
文摘Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ~78% at wavelength of 400~700 nm have been achieved for the films on polyester at room temperature.
文摘From a basic solution containing celyltrimethylammonium cations as the template, thin film of mesoporous MCM-41 has been grown on the surface of a pre-treated indium-tin-oxide conducting glass substrate. The channel axis of the film is oriented parallel with the surface plane of the substrate, and the film is stable after careful removal of template in vacuum.
基金supported by the National Key R&D Program of China under Grant No.2017YFA0305500National Natural Science Foundation of China under Grant No.61904096,Taishan Scholars Program of Shandong Province under Grant No.tsqn201812006+2 种基金Natural Science Foundation of Shandong Province under Grants No.ZR2022JQ05 and No.ZR2022QF025Shandong University Multidisciplinary Research and Innovation Team of Young Scholars under Grant No.2020QNQT015“Outstanding Youth Scholar and Qilu Young Scholar”Programs of Shandong University.
文摘Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.
基金Chinese Ministry of Science and Technology for financial support under construct(2003AA513010)
文摘In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.
文摘ITO (indium oxide doped with tin) thin films were deposited on glass substrates by using ITO pellet with a composition of w(In2O3)=90% and w(SnO2)=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.
基金Project(50271084)supported by the National Natural Science Foundation of China
文摘Indium-tin-oxide(ITO)films were prepared on the quarts glass by sol-gel technique.Effects of different heat treatment temperatures and cooling methods on the morphological,optical and electrical properties of ITO films were measured by TG/DTA, IR,XRD,SEM,UV-VIS spectrometer and four-probe apparatus.It is found that the crystallized ITO films exhibit a polycrystalline cubic bixbyite structure.The heat treatment process has significant effects on the morphological,optical and electrical properties of ITO films.Elevating the heat treatment temperature can perfect the crystallization process of ITO films,therefore the optical and electrical properties of ITO films are improved.But the further increasing of heat treatment temperature results in the increment of ITO films’resistivity.Compared with ITO films elaborated by furnace cooling,those prepared through air cooling have following characteristics as obviously decreased crystalline size,deeply declined porosity,more compact micro-morphology,improved electrical property and slightly decreased optical transmission.
基金This work was financially supported bythe Sichuan Outstanding Youth Foundation of China(No.04ZQ026-008).
文摘High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure. Adhesion and electro-optical properties of ITO films were investigated as a function of Ar partial pressure. The sputtering conditions provide very uniform ITO films with high transparency (>85% in 400-760 nm spectra) and low electrical resistivity (1.408×10-3-1.956×10-3 Ω·cm). Scratch test experiments indicate that there is a good adhesion property between ITO films and PET substrate, the critical characteristic load increases from 16.5 to 23.2 N with increasing Ar sputtering pressure from 0.2 to 1.4 Pa.
文摘In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation method on float glass substrates at room temperature (RT). The surface morphology and dynamic scaling behavior of the films were studied by atomic force microscopy (AFM). It was found that average surface roughness values decreased as the film thickness increased from 100 nm to 350 nm. Fractal geometry and statistical physics techniques have been used to study a variety of irregular films within a common framework of the variance thickness. The Hurst exponent H and growth exponent ? for ITO thin films were determined to be 0.73 ? 0.01 and 0.078, respectively. Based on these results, we suggest that the growth of ITO thin films can be described by the combination of the Edwards-Wilkinson equation and Mullins diffusion equation.
文摘MBE growth of ZnSx Se1-x thin films on ITO coated glass substrates were carried out using ZnS and Se Sources with the substrate temperature ranging from 270℃ to 330℃.The XRD θ/2θ spectra resulted from these films indicated that the as-grown polycrystalline ZnSx Se1-x thin films had a preferred orientation along the (111) planes.The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence,with the optimized temperature being about 290℃.Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence.Hing qual-ity ZnSx Se1-x thin film growm at the optimized temperature had the smoothest surface with lowest RMS valus of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure.
基金supported by BEN TEN THECO.,and National Science Council,under contract 96-2622-E-152-001-CC397-2410-H-152-016
文摘A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.
基金Supported by the National Natural Science Foundation of China(No. 20372060), the Key National Natural Science Foundationof China(No. 20131010), the Important National Natural Science Foundation of China(No. 20490210), the"863"Program(Nos.2002AA302105 and 2002AA324080) and Foreign Communion &Cooperation of National Natural Science Foundation of China(No.20340420326).
文摘The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indiumtin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence(EL) efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.