The induced electricity of 110 kV transmission lines which cross the UHV AC transmission lines may threaten personal safety of the maintenance staff. In this paper, field measurement of the induced voltage and induced...The induced electricity of 110 kV transmission lines which cross the UHV AC transmission lines may threaten personal safety of the maintenance staff. In this paper, field measurement of the induced voltage and induced current on a 110 kV crossing line inside Jinhua in Zhejiang province is performed. The electrostatic induced voltage on the measured line is 12.24 kV. The power frequency electromagnetic field simulation model is established, and the calculation results are consistent with the measured. Influence factors analysis shows that the electrostatic induced voltage on the 110 kV line is 12.78 kV, the electromagnetic induced voltage is 12.3 V, the induced current through ground wire is less than 1A when the UHV lines operate at full load. The induced voltage and current decrease while the crossing distance increases. Parallel lines induction is much higher than crossing lines. The electromagnetic induced voltage after ground knife-switch shut down would exceed the human safety voltage 36 V while the crossing angle is less than 30?, so the temporary ground wire must be hanged to ensure safety of the maintenance staff.展开更多
The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves ...The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.展开更多
The hot-carrier degradation for 90 nm gate length lightly-doped drain （LDD） NMOSFET with ultra-thin （1.4 nm） gate oxide under the low gate voltage （LGV） （at Vg = Vth, where Yth is the threshold voltage） stress...The hot-carrier degradation for 90 nm gate length lightly-doped drain （LDD） NMOSFET with ultra-thin （1.4 nm） gate oxide under the low gate voltage （LGV） （at Vg = Vth, where Yth is the threshold voltage） stress has been investigated. It is found that the drain current decreases and the threshold voltage increases after the LGV （Vg = Vth） stress. The results are opposite to the degradation phenomena of conventional NMOSFET for the case of this stress. By analysing the gate-induced drain leakage （GIDL） current before and after stresses, it is confirmed that under the LGV stress in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot holes are trapped at interface in the LDD region and cannot shorten the channel to mask the influence of interface states as those in conventional NMOSFET do, which leads to the different degradation phenomena from those of the conventional NMOS devices. This paper also discusses the degradation in the 90 nm gate length LDD-NMOSFET with 1.4 nm gate oxide under the LGV stress at Yg = Yth with various drain biases. Experimental results show that the degradation slopes （n） range from 0.21 to 0.41. The value of n is less than that of conventional MOSFET （0.5 - 0.6） and also that of the long gate length LDD MOSFET （- 0.8）.展开更多
文摘The induced electricity of 110 kV transmission lines which cross the UHV AC transmission lines may threaten personal safety of the maintenance staff. In this paper, field measurement of the induced voltage and induced current on a 110 kV crossing line inside Jinhua in Zhejiang province is performed. The electrostatic induced voltage on the measured line is 12.24 kV. The power frequency electromagnetic field simulation model is established, and the calculation results are consistent with the measured. Influence factors analysis shows that the electrostatic induced voltage on the 110 kV line is 12.78 kV, the electromagnetic induced voltage is 12.3 V, the induced current through ground wire is less than 1A when the UHV lines operate at full load. The induced voltage and current decrease while the crossing distance increases. Parallel lines induction is much higher than crossing lines. The electromagnetic induced voltage after ground knife-switch shut down would exceed the human safety voltage 36 V while the crossing angle is less than 30?, so the temporary ground wire must be hanged to ensure safety of the maintenance staff.
基金the National Basic Research Program of Chinathe National Natural Science Foundation of China+1 种基金the Key Project of Chinese Ministry of EducationBeijing Natural Science Foundation
文摘The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.
基金Project supported by the National High Technology Research and Development Program of China （Grant No 2003AA1Z1630） and the National Natural Science Foundation of China （Grant No 60376024）.
文摘The hot-carrier degradation for 90 nm gate length lightly-doped drain （LDD） NMOSFET with ultra-thin （1.4 nm） gate oxide under the low gate voltage （LGV） （at Vg = Vth, where Yth is the threshold voltage） stress has been investigated. It is found that the drain current decreases and the threshold voltage increases after the LGV （Vg = Vth） stress. The results are opposite to the degradation phenomena of conventional NMOSFET for the case of this stress. By analysing the gate-induced drain leakage （GIDL） current before and after stresses, it is confirmed that under the LGV stress in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot holes are trapped at interface in the LDD region and cannot shorten the channel to mask the influence of interface states as those in conventional NMOSFET do, which leads to the different degradation phenomena from those of the conventional NMOS devices. This paper also discusses the degradation in the 90 nm gate length LDD-NMOSFET with 1.4 nm gate oxide under the LGV stress at Yg = Yth with various drain biases. Experimental results show that the degradation slopes （n） range from 0.21 to 0.41. The value of n is less than that of conventional MOSFET （0.5 - 0.6） and also that of the long gate length LDD MOSFET （- 0.8）.
