Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl_2/BCl_3-Based Inductively Coupled Plasma

A study of Cl2/BCl3-based inductively coupled plasma （ICP） was conducted using thick photoresist mask for anisotropic etching of 50μm diameter holes in a GaAs wafer at a relatively high average etching rate for etching depths of more than 150μm. Plasma etch characteristics with ICP process pressure and the percentage of BCI3 were studied in greater detail at a constant ICP coil/bias power. The measured peak-to-peak voltage as a function of pressure was used to estimate the minimum energy of the ions bombarding the substrate. The process pressure was found to have a substantial influence on the energy of heavy ions. Various ion species in plasma showed minimum energy variation from 1.85 eV to 7.5 eV in the pressure range of 20 mTorr to 50 mTorr. The effect of pressure and the percentage of BCl3 on the etching rate and surface smoothness of the bottom surface of the etched hole were studied for a fixed total flow rate. The etching rate was found to decrease with the percentage of BCl3, whereas the addition of BCl3 resulted in anisotropic holes with a smooth veil free bottom surface at a pressure of 30 mTorr and 42% BC13. In addition, variation of the etching yield with pressure and etching depth were also investigated.

Determination on Heavy Metals Content of Achyranthes bidentata Blume. through Inductively Coupled Plasma Mass Spectrometry (ICP-MS)

[Objective] The inductively coupled plasma mass spectrometry(ICP-MS)was constructed to determine the contents of lead,cadmium,mercury and arsenic in Archyranthes bidentata Blume.[Method]Under the optimum operation condition of ICP-MS,the samples were digested by microwave.The element 114In was taken as an internal standard element to compensate body effect and ICP-MS method was used to determine the contents of lead,cadmium,mercury and arsenic.[Result]For the determined elements,the correlation coefficient(r)of standard curve was over 0.9995 and recovery rate was from 96.7% to 106.4% while RSD was less than 11.2%.The result of determination showed that the heavy metal content in Archyranthes bidentata Blume.beyond standard was serious.[Conclusion]The constructed ICP-MS method with simple operation,rapid response,accuracy and high sensitivity in this experiment could be used for quality control of Chinese medicinal materials by detecting heavy metal contents in different Chinese medicinal materials from original places.

The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

Compared to the conventional phase change materials,the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability.In this letter,the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar.The results showed that when CF4/Ar=25/25,the etching power was 600 W and the etching pressure was 2.5 Pa,the etching speed was up to 61 nm/min.The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity(close to 90°),smooth surface of the etching(RMS was 0.51nm),and the etching uniformity was fine.Furthermore,the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy(XPS).The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction(XRD).

Factors Affecting the Top Stripping of GaAs Microwire Array Fabricated by Inductively Coupled Plasma Etching

The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.

Microstructure, Hardness and Corrosion Resistance of ZrN Films Prepared by Inductively Coupled Plasma Enhanced RF Magnetron Sputtering

ZrN fihns were deposited on Si（111） and M2 steel by inductively coupled plasma （ICP）-enhanced RF magnetron sputtering. The effect of ICP power on the microstructure, mechanical properties and corrosion resistance of ZrN films was investigated. When the ICP power is below 300 W, the ZrN films show a columnar structure. With the increase of ICP power, the texture coefficient （To） of the （111） plane, the nanohardness and elastic modulus of the films increase and reach the maximum at a power of 300 W. As the ICP Power exceeds 300 W, the films exhibit a ZrN and ZrNx mixed crystal structure without columnar grain while the nanohardness and elastic modulus of the films decrease. All the ZrN coated samples show a higher corrosion resistance than that of the bare M2 steel substrate in 3.5% NaCl electrolyte. The nanohardness and elastic modulus mostly depend on the crystalline structure and Tc of ZrN（111）.

Determination of micro yttrium in an ytterbium matrix by inductively coupled plasma atomic emission spectrometry and wavelet transform

In the determination of trace yttrium (Y) in an ytterbium (Yb) matrix byinductively coupled plasma atomic emission spectrometry (ICP-AES), the most prominent line ofyttrium, Y 371.030 nm line, suffers from strong interference due to an emission line of ytterbium.In mis work, a method based on wavelet transform was proposed for the spectral interferencecorrection. Haar wavelet was selected as the mother wavelet. The discrete detail after the thirddecomposition, D3, was chosen for quantitative analysis based on the consideration of bothseparation degree and peak height. The linear correlation coefficient between the height of the leftpositive peak in D3 and the concentration of Y was calculated to be 0.9926. Six synthetic sampleswere analyzed, and the recovery for yttrium varied from 96.3 percent to 110.0 percent. The amountsof yttrium in three ytterbium metal samples were determined by the proposed approach with an averagerelative standard deviation (RSD) of 2.5 percent, and the detection limit for yttrium was 0.016percent. This novel correction technique is fast and convenient, since neither complicated modelassumption nor time-consuming iteration is required. Furthermore, it is not affected by thewavelength drift inherent in monochromators that will severely reduce the accuracy of resultsobtained by some chemometric methods.

Speciation of Volatile Selenium Species in Plants Using Gas Chromatography/Inductively Coupled Plasma Mass Spectrometry

Gas chromatography/inductively coupled plasma mass spectrometry (GC/ICP-MS) coupled with solid phase micro-extraction can provide a simple, extremely selective and sensitive technique for the analysis of volatile sulfur and selenium compounds in the headspace of growing plants. In this work, the technique was used to evaluate the volatilization of selenium in wild-type and genetically-modified Brassica juncea seedlings. By converting toxic inorganic selenium in the soil to less toxic, volatile organic selenium, B. juncea might be useful in bioremediation of selenium contaminated soil.

Microstructure and Mechanical Properties of CrN Films Deposited by Inductively Coupled Plasma Enhanced Radio Frequency Magnetron Sputtering

CrN films have been synthesized on Si（100） wafer by inductively coupled plasma （ICP）-enhanced radio frequency （RF） magnetron sputtering. The effects of ICP power on microstructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power.

Influence of a centered dielectric tube on inductively coupled plasma source: Chamber structures and plasma characteristics

A high-density RF ion source is an essential part of a neutral beam injector. In this study, the authors attempt to retrofit an original regular RF ion source reactor by inserting a thin dielectric tube through the symmetric axis of the discharge chamber. With the aid of this inner tube, the reactor is capable of generating a radial magnetic field instead of the original transverse magnetic field, which solves the E × B drift problem in the current RF ion source structure. To study the disturbance of the dielectric tube, a fluid model is introduced to study the plasma parameters with or without the internal dielectric tube, based on the inductively coupled plasma（ICP） reactor. The simulation results show that while introducing the internal dielectric tube into the ICP reactor, both the plasma density and plasma potential have minor influence during the discharge process, and there is good uniformity at the extraction region. The influence of the control parameters reveals that the plasma densities at the extraction region decrease first and subsequently slow down while enhancing the diffusion region.

Inductively Coupling Plasma(ICP) Treatment of Propylene(PP) Surface and Adhesion Improvement

Study on increasing the roughness of the polymer substrate surface to enhance the adhesion with the copper layer in an inductively coupling plasma （ICP） process was carried out. The microstructure of the polymer substrate surfaces, which were exposed to different kinds of plasma treatment, was identified by scanning electron microscopy（SEM） analysis, peel strength of the copper coating and water surface contact angle. The adhesion of the substrate was largely enhanced by plasma treatment and the copper deposited coating reached a value of 7.68 kgf/m in verifying the adhesion of the copper coating with polymer material. The quality of the line/space 50/50 μm produced in the laboratory was examined by the pressure cooker test and proved to meet the requirement.

Diagnostics of Argon Inductively Coupled Plasma and Dielectric Barrier Discharge Plasma by Optical Emission Spectroscopy

An experimental setup was built up to carry out radio frequency (RF) inductively coupled plasma (ICP) and dielectric barrier discharge (DBD), and to depict the optical emission spectra (OES) of the discharges. OES from argon ICP and DBD plasmas in visible and near ultraviolet region were measured. For argon ICP, the higher RF power input (higher than 500 W for our machine), the higher degree of argon plasma ionization. But that doesn't mean a higher mean electron energy. With the increase in the power input, the mean electron energy increases slightly, whereas the density of electron increases apparently On the contrary, argon DBD discharge behaves in the manner of a pulsed DC discharge on optical emission spectroscopy and V-I characteristics. DBD current is composed of a series of pulses equally spaced in temporal domain. The Kinetics of DBD emission strength is mainly governed by the frequency of the current pulse.

Uncertainty Evaluation of Simultaneous Determination of Lead, Cadmium and Arsenic in Cosmetics by Inductively Coupled Plasma Mass Spectrometry

This study aimed to evaluate the uncertainty of simultaneous determination of lead(Pb),cadmium(Cd)and arsenic(As)in cosmetics by microwave digestion-inductively coupled plasma mass spectrometry(ICP-MS)with ^72Ge,^115In and ^209Bi as internal standards.According to the method of Safety and Technical Standards for Cosmetics(2015),a mathematical model was established to evaluate the sources and components of uncertainty for the determination of lead,cadmium and arsenic in cosmetics.The results showed that the uncertainties in the determination of lead,cadmium,and arsenic elements in cosmetics were(10.1±0.6)mg/kg,k=2,(4.84±0.28)mg/kg,k=2,(2.04±0.18)mg/kg,k=2,respectively.The main factors that affect the uncertainty of determination results were standard substance,calibration curve,recovery and measurement repeatability.

<i>In Situ</i>Analysis of Copper Alloys by Femtosecond Laser Ablation Inductively Coupled Plasma Mass Spectrometry: Constrains on Matrix Effects

Direct analysis of copper-base alloys using laser ablation techniques is an increasingly common procedure in cultural heritage studies. However, main discussions remain focused on the possibility of using non-matrix matched external reference materials. To evaluate the occurrence of matrix effects during in situ microanalysis of copper-base materials, using near infrared femtosecond laser ablation techniques (NIR fs-LA-ICP-MS), two bronzes, i.e., (Sn-Zn)-ternary and (Sn)-binary copper-matrix reference materials, as well as a reference synthetic glass (NIST-SRM-610) have been analyzed. The results have been compared to data obtained on a sulfide-matrix reference material. Similar values in relative sensitivity averages of 63Cu, 118Sn and 66Zn, as well as in 118Sn/63Cu and 66Zn/63Cu ratios were obtained, for all analyzed matrix types, i.e., copper-base-, silicate-, and sulfide-reference materials. Consequently, it is possible to determinate major and minor element concentrations in copper alloys, i.e., Cu, Sn and Zn, using silicate and sulfide reference materials as external calibrators, without any matrix effect and over a wide range of concentrations (from wt.% to ppm). Equally, Cu, Sn and Zn concentrations can be precisely determined in sulfides using homogeneous alloys (reference) materials as an external calibrator. Thus, it is possible to determine Cu, Sn and Zn in copper-base materials and their ore minerals, mostly sulfides, in a single analytical session, without requiring specific external calibrators for each matrix type. In contrast, immiscible elements in copper matrix, such as Pb and Fe show notable differences in their relative sensitivity values and ratios for different matrix-materials analyzed, implying that matrix-matched external calibrations remain to be applied for their trace quantification.

基于破乳诱导萃取和ICP-MS/MS分析渣油中的微量金属元素

基于破乳诱导萃取提出利用电感耦合等离子体串联质谱(ICP-MS/MS)测定渣油中多种金属元素的新策略。渣油样品经二甲苯稀释降低黏度后采用质量分数6%的Triton X-114乳化,超声水浴破乳25 min,利用体积分数40%的盐酸萃取渣油中金属元素至水相,采用ICP-MS/MS测定其中10种金属元素Na、Mg、Al、Ca、V、Cr、Fe、Ni、Cu、Zn的含量。详细评估了破乳诱导萃取条件对渣油中金属元素萃取效率的影响,在串联质谱(MS/MS)模式下,利用氦碰撞气或不同反应气消除了金属元素的质谱干扰,采用标准参考物质NIST SRM 1634c(燃油中的微量元素)验证了方法的准确性,以微波消解技术处理渣油样品并采用扇形磁场电感耦合等离子体质谱(SF-ICP-MS)进行对比分析验证了方法的可靠性。结果显示,金属元素在各自的含量范围内呈现良好的线性关系(线性相关系数≥0.9997),检出限(LOD)为2.05~31.4 ng/L,NIST SRM 1634c的测定结果与标准参考物质提供的认证值及文献报道的参考值基本一致,置信度水平达到95%,ICP-MS/MS方法与SF-ICP-MS的对比分析结果无显著性差异。所建立的ICP-MS/MS方法操作简单,分析速率快,准确可靠性好,已用于渣油中多种金属元素的质量评价。

电感耦合等离子体原子发射光谱(ICP-AES)法测定真空精炼镁合金物料中铁、铜、镍

真空精炼是目前镁金属提纯的重要工艺,工艺原料及真空精炼提纯镁金属过程残留物中Fe、Cu、Ni含量的准确测定对工艺参数的优化及调整具有重要的指导作用。传统测定方法中以邻二氮杂菲分光光度法、新亚铜灵分光光度法、丁二酮肟分光光度法测定三种元素含量,结果准确,但操作繁琐,周期较长,难以满足工业生产中高效、快速测定的需要,且方法中所需的有机萃取剂对环境污染较大。选择电感耦合等离子体发射光谱(ICP-AES)法测定真空蒸馏精炼镁合金物料中Fe、Cu、Ni,系统探究溶解酸、溶解温度、溶解时间对物料溶解和测定的影响,选择盐酸(1+1)和过氧化氢溶解体系,200℃加热条件下反应20 min为最佳消解镁合金原料条件;选择王水溶解体系,200℃加热条件下反应25 min为真空精炼残留物最佳溶解条件。并探讨ICP-AES测定过程中各元素的检出限和测定下限以及共存元素的干扰情况,建立了ICP-AES法测定真空精炼提纯镁合金物料的方法。测定结果的相对标准偏差(RSD,n=11)为Fe 5.9%~11.5%、Cu 2.6%~11.8%、Ni 3.4%~11.5%,各元素加标回收率为Fe 96.4%~102%、Cu 101%~108%、Ni 103%~105%;按照建立的方法测定镁合金原料、真空精炼残留物中的铁、铜、镍,并与国家标准方法测定结果进行对比,结果相一致。实现了ICP-AES法快速、准确测定真空蒸馏精炼镁合金物料中铁、铜、镍含量,对及时、高效、准确评估真空精炼提纯镁工艺及产品具有重要意义。

氧气反应模式-四极杆ICP-MS定量高温合金中痕量元素及质谱干扰消除机理研究

本研究建立了氧气反应模式-四极杆电感耦合等离子体质谱(Q-ICP-MS)法准确定量高温合金中痕量杂质元素,对不同碰撞/反应模式消除质谱干扰的效果进行研究。结果表明,氧气动态反应池(DRC-O_(2))模式下,目标元素Cd的多原子离子质谱干扰能够被有效去除;在优化气流为2 mL/min时,信噪比达到最高,检出限较标准模式(STD)降低了近3个数量级。此外,还研究了质谱干扰的消除机理,发现对于元素X(X=Rb、Nb、Mo、Cs、Ta、W或U),当X-O键能大于O-O键能时,质谱干扰组分XO转化成非干扰组分XOO为自发反应,因此,O_(2)充足时更容易生成XOO,从而消除XO干扰。在此基础上,采用高浓度基体模拟溶液(Mo、Nb、Ta、W)分别对痕量Cd、Ag、Au、Hg元素测量的方法学参数进行评估,方法检出限0.08~0.31μg/g、测量重复性相对标准偏差(RSD)2.3%~3.1%(n=6),加标回收率98%~103%,并进一步使用高温合金标准物质验证了方法的可靠性。最后,对3类典型牌号高温合金样品中的痕量杂质进行测量,证明该方法的分析速度快、检出限低、准确可靠,能够满足高温合金中主量Mo、Nb、Ta、W元素存在时被干扰杂质的测量要求。

基于MC-ICP-MS的稳定铜同位素分析在环境健康研究中的应用进展

铜(Cu)是人体内重要的微量金属元素之一,在许多生命过程中扮演着重要角色;同时,铜在人体内受到严格调控,其稳态与人体生理状态密切相关,许多疾病的发生往往伴随着铜代谢失衡的现象。通过监测铜稳态的细微变化,可以更精准地发现导致人体生理异常变化的因素,特别是环境因素对疾病发生及发展的影响。因此,稳定铜同位素分析在环境健康研究中具有广泛的应用前景。多接收器电感耦合等离子体质谱(MC-ICP-MS)是一种强大的同位素分析质谱方法,具有适用范围广、分析精度高等优点,有效促进了铜同位素分析的发展。本文综述了非传统稳定同位素分馏机理及基于MC-ICP-MS的铜同位素分析方法,总结了铜同位素分析在环境健康研究中的主要应用,并对其前景进行展望。

电感耦合等离子体质谱(ICP-MS)法测定锆钛矿中的铪

锆钛矿中存在耐高温的锆、钛化合物,铪以类质同象进入锆矿物中,准确测定锆钛矿中的铪对选矿研究、矿物综合利用及工业生产有重要作用。通过考察锆钛矿成分及熔融方法,以碳酸钠-硼砂高温熔融锆钛矿,以178 Hf为分析同位素及185 Re为内标,使用电感耦合等离子体质谱法测定锆钛矿中含量不均的铪。结果表明,碳酸钠-硼砂高温熔融效果最好,可完全溶解耐高温难分解的锆钛矿,当碳酸钠-硼砂质量配比为2∶1时熔融效果最佳。ICP-MS蠕动泵转速为45 r/min、雾化气流量为1.06 L/min时雾化效率最优。在选定的实验条件下,HfO_(2)质谱强度与质量浓度在0.01~250 ng/mL呈良好的线性关系,相关系数为0.9997,背景等效浓度为0.029 ng/mL,方法检出限为0.0032 ng/mL。按实验方法对中国国家标准物质中的HfO_(2)进行测定,测定值与认定值一致,相对标准偏差在1.6%~3.2%。按实验方法对锆钛矿样品中的HfO_(2)进行测定并进行加标回收实验,测定结果的相对标准偏差(RSD,n=9)为0.90%~3.4%,加标回收率在96.0%~106%,满足国家地质矿产行业标准DZ/T 0130—2006的要求。

基于ICP的Ar等离子体干法刻蚀Ti/Ni/Ag薄膜

在电感耦合等离子体(ICP)刻蚀工艺中,选择合适的刻蚀条件对Ti/Ni/Ag薄膜的刻蚀至关重要。使用氩气(Ar)作为刻蚀气体,研究了射频偏压功率、气体体积流量、腔体压强、刻蚀时间等多个参数对功率芯片背面Ti/Ni/Ag薄膜刻蚀深度的影响,并优化刻蚀工艺参数。实验结果表明,调节射频偏压功率和Ar体积流量可以显著影响刻蚀速率,进而对薄膜的微结构进行有效调控。通过优化工艺参数,在射频偏压功率300 W、Ar体积流量40 cm^(3)/min、腔体压强1.2 Pa、刻蚀时间50 min下,芯片Ti/Ni/Ag薄膜的刻蚀深度达到283.25μm,有效提升了刻蚀效率和刻蚀精度。

ICP-MS 法测定药用辅料蔗糖中元素杂质的含量

目的:建立ICP-MS法测定药用辅料蔗糖中砷(As)、镉(Cd)、汞(Hg)、铅(Pb)、钴(Co)、镍(Ni)、钒(V)、锂(Li)、锑(Sb)、铜(Cu)等10种元素的含量,评估其风险。方法:将药用辅料蔗糖溶解在0.1%HNO_(3)溶液中,采用ICP-MS法,设定测定模式为STD模式,通过优化仪器参数,测定蔗糖中^(75)As、^(111)Cd、^(202)Hg、^(208)Pb、^(59)Co、^(60)Ni、^(51)V、~7Li、^(121)Sb、^(63)Cu等10种元素的含量。结果:As、Cd、Pd、Co、Ni、V、Li、Sb、Cu等10种元素在0~100 ng·mL^(-1)范围内线性良好(r不低于0.99);Hg在0~2 ng·mL^(-1)范围内线性良好(r=0.999 1)。10种元素的平均回收率在99.8%~100.0%,RSD小于5%(n=6)。结论:方法易操作、准确度高,可用于药用辅料蔗糖中10种元素杂质的含量测定。通过结果可见,药用辅料蔗糖中含上述十种元素量远低于ICH Q3D中规定值,风险较小,修订标准时可不再单独考虑重金属项。