Factors Affecting the Top Stripping of GaAs Microwire Array Fabricated by Inductively Coupled Plasma Etching

The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.

Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals

This paper mainly describes fabrication of two-dimensional GaAs-based photonic crystals with low nanometer scale air-hole arrays using an inductively coupled plasma （ICP） etching system. The sidewall profile and surface characteristics of the photonic crystals are systematically investigated as a function of process parameters including ICP power, RF power and pressure. Various ICP powers have no significant effect on the verticality of air-hole sidewall and surface smoothness. In contrast, RF power and chamber pressure play a remarkable role in improving sidewall verticality and surface characteristics of photonic crystals indicating different etching mechanisms for low nanometer scale photonic crystals. The desired photonic crystals have been achieved with hole diameters as low as 130 nm with smooth and vertical profiles by developing a suitable ICP processes. The influence of the ICP parameters on this device system are analyzed mainly by scanning electron microscopy. This fabrication approach is not limited to GaAs material, and may be efficiently applied to the development of most two-dimensional photonic crystal slabs.

Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes

Inductively coupled plasma （ICP） etching of 4H-SiC using SF6/Oa gas mixture was studied systemati- cally and the effect of etching was examined by metal field plate SiC Schottky diodes （SBDs）. It was found that the etch rate as well as SiC surface morphology were related with ICP power, RF power, pressure, the flow of SF6 and O2. Etching damages （the cone-in-pits and pits） generated at high chuck self-bias were observed, and they were thought to be caused by SiC defects. The degradation of both the reverse and forward I-V performances of SiC SBDs was ascribed to the cone-in-pits and pits. Moreover, the absolute value of forward current is even less than the reverse counterpart in the absolute value voltage range of 0-50 V for SiC SBDs with etching damages.

A review: aluminum nitride MEMS contour-mode resonator

Over the past several decades, the technology of micro-electromechanical system（MEMS） has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride（AlN） MEMS contour-mode resonator（CMR）has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit（IC） technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR.