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Picosecond Laser Machining of Deep Holes in Silicon Infiltrated Silicon Carbide Ceramics 被引量:1
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作者 张青 WANG Chunhui +2 位作者 LIU Yongsheng ZHANG Litong CHENG Guanghua 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2015年第3期437-441,共5页
Silicon infiltrated silicon carbide (Si-SiC) ceramics, as high hardness materials, are difficult to machine, especially drilling micro-holes. In this study, the interaction of picosecond laser pulses (1 ps at 1 030... Silicon infiltrated silicon carbide (Si-SiC) ceramics, as high hardness materials, are difficult to machine, especially drilling micro-holes. In this study, the interaction of picosecond laser pulses (1 ps at 1 030 nm) with Si-SiC ceramics was investigated. Variations of the diameter and depth of circular holes with the growth of the laser energy density were obtained. The results indicate that the increase of machining depth follows a nonlinear relation with the increasing of laser energy density, while the diameter has little change with that. Moreover, it is found that some debris and particles are deposited around and inside the holes and waviness is in the entrance and at walls of the holes after laser processing. 展开更多
关键词 picosecond laser deep holes silicon infiltrated silicon carbide ceramic
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