Development of small pixel HgCdTe infrared detectors

After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.

Improvement of tunnel compensated quantum well infrared detector

To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector(QWIP)with tunnel compensation structure,an improved structure is proposed.In the new structure,the superlattices are located between the tunnel junction and the barrier as the infrared absorption region,eliminating the effect of doping concentration on the well width in the original structure.Theoretical analysis and experimental verification of the new structure are carried out.The experimental sample is a two-cycle device,each cycle contains a tunnel junction,a superlattice infrared absorption region and a thick barrier.The photosurface of the detector is 200×200μm^2 and the light is optically coupled by 45°oblique incidence.The results show that the optimal operating voltage of the sample is-1.1 V,the dark current is 2.99×10^-8A,and the blackbody detectivity is1.352×10^8 cm·Hz^1/2·W^-1at 77 K.Our experiments show that the new structure can work normally.

High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1(blue channel) and long-wavelength infrared band-2(red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×10^(11) cm·Hz^(1/2)/W at 6.8 μm and 3.1×10^(11) cm·Hz1^(1/2)/W at 9.1 μm, respectively, at 77 K.

Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers Type of InAs/GaSb Superlattices for Middle-Long and Very-Long Wavelength

We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave （MW）, long-wave （LW）, and very long-wave （VLW） detections. The detector structure consists of three contacts of NIPIN architecture for MW and LW detections, and hetero-junction NIP architecture for VLW detection. It is found that the spectral crosstalks can be significantly reduced by controlling the minority carriers transport via doping beryllium in the two active regions of NIPIN section. The crosstalk detection at MW, LW, and VLW signals are achieved by selecting the bias voltages on the device. At 77K, the cutoff wavelengths of the three-color detection are 5.3μm （at OmV）, 141μm （at 300mV） and 19μm （at -20mV） with the detectivities of 4.6xlO11 cm.Hzl/ZW-1, 2.3×10^10 cm.Hzl/2W-1, and 1.0×10^10cm.Hzl/2W-1 for MW, LW and VLW. The crosstalks of the MW channel, LW channel, and VLW channel are almost 0, 0.25, and 0.6, respectively.

TEM study on Si_(0.65) Ge_(0.35) /p Si HIP infrared detector

Microstructure of P + Si 0.65 Ge 0.35 /p Si HIP infrared detector has been studied by using localization cross section transmission electron microscopy. The photosensitive region of the detector consists of 6 P + Si 0.65 Ge 0.35 layers and 5 UD Si layers, which are flat and have thickness of 6 nm and 32 nm, respectively. A stress field exists on the interface between Si 0.65 Ge 0.35 and UD Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.

High-performance midwavelength infrared detectors based on InAsSb nBn design

we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandgap Al As0.08 Sb0.92 barrier layer in the n Bn detector, in which the depletion region of n Bn detector exists. The n Bn design has many advantages, such as low dark current and high quantum efficiency, because the n Bn design can suppress the generation–recombination(GR)current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0–1/T indicates the absence of the generation–recombination dark current. We fabricate an n Bn detector with a quantum efficiency(QE) maximum of ~ 60% under-0.2-V bias voltage. The In As Sb n Bn detectors may be a competitive candidate for midwavelength infrared detector.

Wet etching and passivation of GaSb-based very long wavelength infrared detectors

The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.

MODIFICATION OF ABSORPTION SPECTRUM OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR BY POSTGROWTH ADJUSTMENT

Quantum well intermixing techniques modify the geometric shape of quantum wells to allow postgrowth adjustments.The tuning effect on the optical response property of a GaAs/AlGaAs quantum well infrared photodetector(QWIP) induced by the interdifussion of Al atoms was studied theoretically.By assuming an improvement of the heterointerface quality and an enhanced Al interdiffusion caused by postgrowth intermixings,the photoluminescence spectrum shows a blue-shifted,narrower and enhanced photoluminescence peak.The infrared optical absorption spectrum also shows the expected redshift of the response wavelength.However,the variation in the absorption peak intensity depends on the boundary conditions of the photo generated carriers.For high-quality QWIP samples,the mean free path of photocarriers is long so that the photocarriers are largely coherent when they transport across quantum wells.In this case,the enhanced Al interdiffusion can significantly degrade the infrared absorption property of the QWIP.Special effects are therefore needed to maintain and/or improve the optical properties of the QWIP device during postgrowth treatments.

Development of Low Dark Current SiGe Near-Infrared PIN Photodetectors on 300 mm Silicon Wafers

SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p+ seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n+ regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n+ region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 1019 cm-3.

Development of long-wavelength infrared detector and its space-based application requirements

Infrared detection technology has greatly expanded the ability of mankind to study the earth and the universe. In recent years, the demand for long-wavelength infrared detectors is increasing for their advantages in exploring the earth and the universe. A variety of long-wavelength infrared detectors have been made based on thermal resistive effect, photoelectric effect, etc., in the past few decades. Remarkable achievements have been made in infrared materials, device fabrication,readout circuit, and device package. However, high performance long-wavelength infrared detectors, especially those for large format long-wavelength infrared detector focus plane array, are still unsatisfactory. Low noise, high detectivity, and large format long-wavelength infrared detector is necessary to satisfy space-based application requirements.

Gradient refractive structured NiCr thin film absorber for pyroelectric infrared detectors

A gradient refractive structured NiCr film that has a high extinction coefficient at far infrared range(8-μm–24 μm) is presented as an absorber for pyroelectric infrared detectors. The absorber features high absorption efficiency due to the low reflection off the structured surface and high absorption across the film thickness. The refractive index and extinction coefficient are extracted using spectroscopic ellipsometry. It is found that the single NiCr film exhibits an increasing refractive index as the gas atmosphere pressure increases, hence the three-layer gradient NiCr absorber can be fabricated by adjusting the gas atmosphere pressure during sputtering deposition. Essential Macleod software has been used to generate an efficient film structure design and the calculations show similar absorptance trend compared to the experimental measurement result. The results indicate that the gradient refractive structured metal thin film absorber can provide high absorption for applications in thermal sensing.

MOCVD Ga_xIn_(1-x)As_(1-y)Sb_y Alloys and the Infrared Detector

Ga_xIn_(1-x)As_(1-y)Sb_y alloys have been grown by atmospheric pressure MOCVD on n-GaSb(Te-doped) substrate.The sohd composition was determined by using electron microprobe.The alloys of GalnAsSb with composition in miscibility gap were successfully grown.The optical properties of Ga_xIn_(1-x)As_(1-y)Sb_y lavers were characterized by the photoluminescence and the infrared absorption.The spectral responses of p^+-GaInAsSb/p-Ga_xIn_(1-x)As_(1-y)Sb_y/n-GaSb detectors showed wavelength cut off at 2.4μm and detectivity- D~*=5×10~8 cmHz^(1/2)/W at room temperature.

HREM study on stacking structure of SiGe/Si infrared detector

Stacking structure and defects in SiGe/P Si infrared detector were studied by using localization high resolution electron microscopy (HREM). The photosensitive region in the detector consists of 3 P + Si 0.65 Ge 0.35 layers and 2 UD Si (undoped Si) layers. The interface between Si 0.65 Ge 0.35 and UD Si is not sharp and has a transition zone with non uniform contrast. The misfit stress of interface is distributed gradiently along the normal direction of the interface. Therefore the crystal defects and serious lattice deformations on the interface have not been found. A defect area with a shape of inverted triangle exists in the edge of photosensitive region. The main types of the defects in the area are stacking faults and microtwins. The stacking faults are on (111), and the thickness of the most microtwins is less than 4 interplanar spacing and the twin plane is (111). The Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals grown by random nucleation, and are in wave.

Modification of ST2L infrared thermo detector and its application in underground coal mines

Infrared thermo detector is a kind of non-contact instrument used to measure the surface temperature of objects. It incorporates high technologies of optics, infrared and electronics, and has been increasingly popularized in China. Firstly, the advantages and shortcomings of ST2L infrared thermo detector were analyzed. Then based on the requirement of detecting buried geological structures in underground coalmines and the features of ST2L, two projects had been studied to modify ST2L: 1) Increasing the resolution of temperature measurements by means of improving the electrical circuit and carrying out field test; 2) Realizing flame protection of ST2L and passing the state-level test and appraisement. In addition, actual application experiments had been carried out for detecting underground buried geological structures (fault, fold, crushing zone, crack, porosity, gas and spontaneous combustion areas, etc.). Some good results have been achieved and valuable conclusions have been drawn.

TEC Colling Shortwave Infrared 320×256 Focal Plane Detector

The short-wave HgCdTe thin film material was grown by liquid phase epitaxy on CdTe substrate,Adopt n on p injection bonding and function and flip-flop mixing process,With a low noise readout circuit,sealed with a high airtightness cellular-metal shell,Using a four-stage Thermo Electric Cooler(TEC),320×256 Short Wave Infrared Focal Plane Cooling Detecto r available to operate at near room temperature(210K).Its main photoelectric performance are signal-to-noise ratio greater than 400,nonuniformity equivalent to 4.69%,operability equivalent to 99.76%,frame rate equivalent to 115Hz,component weight less than 150grams.

40 K双波段长波探测器冷箱封装技术研究

冷光学技术是弱目标及多光谱红外探测的重要支撑技术。为了实现低温光学系统温度精确控制和防污染,一般多将低温光学与探测器集成在冷箱内。某高光谱相机需要1个320×64量子阱探测器和1个320×64 II类超晶格探测器共面拼接,集成双波段微型滤光片,形成长波双波段探测杜瓦组件,探测器工作所需的40 K低温环境由脉管制冷机提供。杜瓦采用无窗口设计,并通过柔性波纹管将杜瓦外壳与冷箱外壳集成,以实现气密性集成和光校调节。针对40 K温区双波段探测器封装的三维拼接、探测器及滤光片的低应力封装、制冷机与探测器的高效热传输等难点,对探测器的三维拼接、40 K温区高效热传输、探测器低应力集成的热层结构、低应力滤光片支撑、杜瓦与制冷机耦合等进行研究,创新性提出了三点Z向调节拼接方法、探测器Al2O3载体复合钼基板和钼冷平台的热层结构、双波段滤光片集成的钼支撑结构、带应力隔离的冷平台与制冷机过盈装配的耦合方法,最终实现了40 K温区下双波段探测器平面度优于±2.06μm(RMS)、探测器的低温应力小于22.06 MPa、双波段滤光片低温形变小于8.55μm、探测器与制冷机温度梯度为2.6 K。40 K长波双波段红外探测器冷箱杜瓦组件经过2000 h通电老练和300次开关机试验验证,试验前后组件性能未发生明显变化,满足工程化应用的要求。

低轨星座红外探测器对临近空间高超声速目标的可探测性分析

以STSS LEO红外探测平台为例,分析其对AGM-183A类空射式高超声速目标的可探测性。为了直观比较不同条件下目标的光电探测特性,将其量化为焦平面上输出信噪比超过阈值的像元数量。首先计算目标气动温度及光谱辐射强度,再利用探测器模型,计算在不同探测方向、距离和角度下,焦平面的信噪比峰值以及超过信噪比阈值的像元数量。分析结果表明,星下点模式下信噪比峰值最高(335),且超过信噪比阈值(6)的像元数最多(54×54),此像元数代表LEO星座对AGM-183A目标的最大可探测性。在临边探测模式下,给出目标可探测性随探测角度和目标温度的变化规律。结果表明,当目标温度接近800 K且探测方位角ψ小于10°(或大于170°)时,焦平面上超过信噪比阈值的像元数量为4×4,说明此时目标可探测性已经接近探测器的理论极限(3×3)。对比来看,温度的改变对目标可探测性的影响更为显著。在临边探测模式下,目标在飞行中段采用主动冷却手段降低表面气动温度以逃脱LEO探测的概率更高。从提高预警能力角度,要提高探测器在最不利角度对温度接近800 K目标的信噪比阈值(方位角ψ小于10°或大于170°时焦平面像元数量不低于8×8)。

大幅宽多谱段高光谱红外探测器研究

报道了基于分子束外延(Molecular Beam Epitaxy,MBE)碲镉汞(Mercury Cadmium Telluride,MCT)技术的大幅宽、多谱段、大像元高光谱红外探测器的最新研究进展。采用MBE技术制备出高质量MCT材料;采用成熟的n-on-p技术路线制备探测芯片,并针对特殊形状的大像元进行了优化;高光谱专用读出电路设计针对短波、窄谱段、小信号等典型特征进行了优化,并针对光谱应用加入行增益可调等功能设计。测试结果表明,组件基本性能良好,有效像元率大于99.5%,平均量子效率优于70%。

红外探测器芯片高可靠性键合工艺研究

金丝键合工艺广泛应用于红外探测器的封装环节。实验选用25μm金丝,基于正交试验法,根据键合拉力值确定键合的最佳工艺参数。通过优化超声压力、超声功率、超声时间及接触力等工艺参数组合,改善了键合引线的电气连接性能和连接强度,从而提高芯片系统的信号传输质量。提出的引线键合工艺参数组合适用于红外探测芯片的键合。

冷光学用大口径2 k×2 k红外探测器组件封装技术

大面阵和长线列红外探测器已成为下一代红外探测器的发展方向之一,针对于大面阵探测器低温封装的难点,提出了一种大面阵探测器组件封装结构。对组件低形变窗口支撑结构、低噪声冷平台结构以及低漏热兼高可靠性的引线键合工艺等方面进行了研究,以中波红外2 k×2 k探测器组件为研究对象,通过200 K窗口低温光学设计和低形变窗口帽支撑方式实现组件低背景杂散光抑制设计和窗口形变控制。采用SiC基板实现探测器工作温度波动控制和噪声抑制,5 min内探测器温度波动小于0.1 K,噪声等效温差(NETD)小于20 mK。为了降低引线漏热和增强引线可靠性,采用铂铱丝键合工艺,引线漏热相较于金丝和硅铝丝下降至1/10,制冷机功率由72 W降至39 W。引线随组件通过随机和正弦力学试验考核。解决了大面阵探测器封装中杂散光、大口径窗口形变、探测器噪声、引线漏热和强度等一系列问题,该组件已成功运用于某项目2 k×2 k探测器封装中。