The measurement of responsivity of infrared photodetectors using a cavity blackbody

For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between the blackbody,the photodetector and the aperture diameter are two parameters that contribute most measurement errors.In this work,we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter.The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results.The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature,aperture diameter and distance.Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained.

New materials and designs for 2D-based infrared photodetectors

Infrared photodetectors have attracted much attention considering their wide civil and military applications.Two-dimensional(2D)materials offer new opportunities for the development of costless,high-level integration and high-performance infrared photodetectors.With the advent of a broad investigation of infrared photodetectors based on graphene and transition metal chalcogenides(TMDs)exhibiting unique properties in recent decades,research on the better performance of 2D-based infrared photodetectors has been extended to a larger scale,including explorations of new materials and artificial structure designs.In this review,after a brief background introduction,some major working mechanisms,including the photovoltaic effect,photoconductive effect,photogating effect,photothermoelectric effect and bolometric effect,are briefly offered.Then,the discussion mainly focuses on the recent progress of three categories of 2D materials beyond graphene and TMDs.Noble transition metal dichalcogenides,black phosphorus and arsenic black phosphorous and 2D ternary compounds are great examples of explorations of mid-wavelength or even long-wavelength 2D infrared photodetectors.Then,four types of rational structure designs,including type-II band alignments,photogating-enhanced designs,surface plasmon designs and ferroelectric-enhanced designs,are discussed to further enhance the performance via diverse mechanisms,which involve the narrower-bandgap-induced interlayer exciton transition,gate modulation by trapped carriers,surface plasmon polaritons and ferroelectric polarization in sequence.Furthermore,applications including imaging,flexible devices and on-chip integration for 2D-based infrared photodetectors are introduced.Finally,a summary of the state-of-the-art research status and personal discussion on the challenges are delivered.

Recent developments of infrared photodetectors with lowdimensional inorganic nanostructures

Low-dimensional inorganic nanostructures such as quantum dots as well as one-and two-dimensional nanostructures are widely studied and already used in high-performance infrared photodetectors.These structures feature large surface-to-volume ratios,tunable light absorption,and electron-limiting effects.This article reviews the state-of-the-art research of low-dimensional inorganic nanostructures and their application for infrared photodetection.Thanks to nano-structuring,a narrow bandgap,hybrid systems,surface-plasmon resonance,and doping,many common semiconductors have the potential to be used for infrared detection.The basic approaches towards infrared detection are summarized.Furthermore,a selection of very important and special nanostructured materials and their remarkable infrared-detection properties are introduced(e.g.,black phosphorus,graphene-based,MoX_(2)-based,Ⅲ-Ⅶ group).Each section in this review describes the corresponding photosensitive properties in detail.The article concludes with an outlook of anticipated future developments in the field.

Vapor phase growth of two-dimensional PdSe2 nanosheets for high-photoresponsivity near-infrared photodetectors

Palladium diselenide(PdSe2),a stable layered material with pentagonal structure,has attracted extensive interest due to its excellent electrical and optoelectronic performance.Here,we report a reliable process to synthesize PdSe2 via chemical vapor deposition(CVD)method.Through systematic regulation of temperature in the growth process,we can tune the thickness,size,nucleation density and morphology of PdSe2 nanosheets.Field-effect transistors based on PdSe2 nanosheets exhibit n-type behavior and present a high electron mobility of 105 cm^2·V^−1·s^−1.The electrical property of the devices after 6 months keeping in the air show little change,implying outstanding air-stability of PdSe2.In addition,PdSe2 near-infrared photodetector shows a photoresponsivity of 660 A·W^−1 under 914 nm laser.These performances are better than those of most CVD-grown 2D materials,making ultrathin PdSe2 a highly qualified candidate material for next-generation optoelectronic applications.

Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors

Pre-strained nanomembranes with four embedded quantum wells（QWs） are rolled up into threedimensional（3D） tubular QW infrared photodetectors（QWIPs）,which are based on the QW intersubband transition（ISBT）.A redshift of ～0.42 meV in photocurrent response spectra is observed and attributed to two strain contributions due to the rolling of the pre-strained nanomembranes.One is the overall strain that mainly leads to a redshift of ～0.5 meV,and the other is the strain gradient which results in a very tiny variation.The blue shift of the photocurrent response spectra with the external bias are also observed as quantum-confined Stark effect（QCSE）in the ISBT.

Advantages of QWIP technology in infrared thermal cameras

Standard GaAs/AlGaAs quantum well infrared photodetectors(QWIP)have been seriously considered as atechnological choice for the 3^(rd) generation of thermal imagers in the long wave infrared band(LWIR)for some time.Alternative technology like MCT(HgCdTe)was the technology choice of the 2^(nd) generation because of its high quantum efficiency.In the paper,measurements on the QWIP technology will be presented and a comparison with alternative technology will be done.

QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTO-DETECTOR-ⅠOPTICAL ASPECTS

A complete quantum mechanical model for GaAs?AlGaAs quantum well infrared photodetectors(QWIPs) is presented here. The model consisted of four parts: (1) Starting with the description of the electromagnetic field of the infrared radiation in the QWIP, effective component of the vector potential <| A z |> along the QWIP growth direction ( z axis) due to the optical diffraction grating was calculated. (2) From the wave transmissions and the occupations of the electronic states, it was discussed that the dark current in the QWIP is determined by the drift diffusion current of carriers thermally excited from the ground sublevel in the quantum well to extended states above the barrier. (3) The photocurrent was investigated by the optical transition (absorption coefficient between the ground state to excited states due to the nonzero <| A z |> ). (4) By studying the inter diffusion of the Al atoms across the GaAs?AlGaAs heterointerfaces,the mobility of the drift diffusion carriers in the excited states was calculated, so the measurement results of the dark current and photocurrent spectra can be explained theoretically. With the complete quantum mechanical descriptions of (1 4), QWIP device design and optimization are possible.

Injector Quantum Dot Molecule Infrared Photodetector:A Concept for Efficient Carrier Injection

Quantum dot infrared photodetectors are expected to be a competitive technology at high oper ation temperatures in the long and very long wavelength infrared spectral range.Despite the fact that they already achieved notable success,the performance suffers from the thermionic emission of electrons from the quantum dots at elevated temperatures resulting in a decreasing responsivity.In order to provide an efficient carrier injection at high temperatures,quantum dot infrared photodetectors can be separated into two parts:an injection part and a detection part,so that each part can be separately optimized.In order to integrate such functionality into a device,a new class of quantum dot infrared photodetectors using quantum dot molecules will be introduced.In addition to a general discussion simulation results suggest a possibility to realize such a device.

Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing

High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6 × 10^(9)cm·Hz^(1/2)/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance.

Long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber

We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8.48μm and the peak photoresponse wavelength is 7.78μm.The peak responsivity is 0.93 A/W and the detectivity D*is 1.12×10^(11)cm·Hz0.5/W for 7.78μm at-0.20 V.The detector can operate up to about 260 K.At 260 K,the 50%cutoff wavelength is 11.52μm,the peak responsivity is 0.78 A/W and the D*is 5.02×10^(8)cm·Hz0.5/W for the peak wavelength of 10.39μm at-2.75 V.The dark current of the device is dominated by the diffusion current under both a small bias voltage of-0.2 V and a large one of-2.75 V for the temperature range of 120 to 260 K.

Broadening of Photoluminescence by Nonhomogeneous Size Distribution of Self-Assembled InAs Quantum Dots

The photoluminescence spectrum （PL） of InAs quantum dots （QDs） at 80 K is studied by comparison between the theoretical calculation and experimental measurement. The Gaussian line shape is used to approximate the size distribution of QDs. Its mean volume and the standard full width at half maximum （FWHM） of the PL spectrum. size deviation are well correlated with the peak and The experimental PL spectrum is well reproduced by the theoretical model based on the effect mass approximation including the size distribution without any adjustable parameters. Compared with the standard size deviation value σ = 9 × 10^-2 determined by atomic force microscopic method a small value σ = 7 × 10^-2 is obtained by the best fitting process from the measured and calculated PL spectra.

III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

During the last two decades, III-nitride-based quantum dots(QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes(LEDs), QD infrared photodetectors(QDIPs) and QD intermediate band(QDIB) solar cells(SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.

Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

In this paper,we demonstrate nBn InAs/InAsSb type II superlattice(T2SL)photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared(MWIR)detection.To improve operating temperature and suppress dark current,a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO_(2) layer.These result in ultralow dark current density of 6.28×10^(-6)A/cm^(2)and 0.31 A/cm^(2)under-600 mV at 97 K and297 K,respectively,which is lower than most reported InAs/InAsSb-based MWIR photodetectors.Corresponding resistance area product values of 3.20×10^(4)Ω·cm^(2)and 1.32Ω·cm^(2)were obtained at 97 K and 297 K.A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5μm and a peak detectivity of 2.1×10^(9)cm·Hz^(1/2)/W were obtained at a high operating temperature up to 237 K.

Flexible Transparent Near-Infrared Photodetector Based on 2D Ti_(3)C_(2) MXene-Te Van Der Waals Heterostructures

Ti_(3)C_(2) MXe ne servi ng as superior electrical con ductors prese nts more specific performa nee such as tran spar ency,con ductivity tha n gold(Au),and even could form a heterostructure with active materials of the functional devices.Here,a Ti_(3)C_(2) MXene-Te microplate van der Waals heterostructure based tran spare nt near-i nfrared photodetector(PD)is exploited.

Picosecond electrical response in graphene/MoTe_(2) heterojunction with high responsivity in the near infrared region

Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and high responsivity.Devices based on two-dimensional(2D)transition metal dichalcogenides can exhibit picosecond photoresponse speed.However,2D materials naturally have low absorption,and when increasing thickness to gain higher responsivity,the response time usually slows to nanoseconds,limiting their photodetection performance.Here,by taking time-resolved photocurrent measurements,we demonstrated that graphene/MoTe_(2) van der Waals heterojunctions realize a fast 10 ps photoresponse time owing to the reduced average photocurrent drift time in the heterojunction,which is fundamentally distinct from traditional Dirac semimetal photodetectors such as graphene or Cd_(3)As_(2) and implies a photodetection bandwidth as wide as 100 GHz.Furthermore,we found that an additional charge carrier transport channel provided by graphene can ef-fectively decrease the photocurrent recombination loss to the entire device,preserving a high responsivity in the near-infrared region.Our study provides a deeper understanding of the ultrafast electrical response in van der Waals heterojunctions and offers a promising approach for the realization of photodetectors with both high responsivity and ultrafast electrical response.

Characterization and performance of graphene-PbSe thin film heterojunction

An infrared detector with high responsivity based on graphene-PbSe thin film heterojunction was reported.High-quality PbSe thin film and graphene were prepared by molecular beam epitaxy and chemical vapor deposition,respectively.The physical characteristics of PbSe thin film and graphene were performed using X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS)and Raman measurement.The photo transistor using PbSe thin film as a sensitizer and graphene as a channel to transport excitons exhibits peak responsivity and detectivity up to~420 A·W^(-1) and 5.9×10^(11) Jones(radiation intensity:0.75 mW·cm^(-2))at room temperature in the near-infrared(NIR)region,respectively.The high optical response is attributed to the photo-excited holes transferring from PbSe film to graphene under irradiation.Moreover,it is revealed that the responsivity of graphene-PbSe photo transistor is gate-tunable which is important in photodetectors.

Efficiently band-tailored type-Ⅲ van der Waals heterostructure for tunnel diodes and optoelectronic devices

Broken-gap(type-Ⅲ)two-dimensional(2D)van der Waals heterostructures(vdWHs)offer an ideal platform for interband tunneling devices due to their broken-gap band offset and sharp band edge.Here,we demonstrate an efficient control of energy band alignment in a typical type-ⅢvdWH,which is composed of vertically-stacked molybdenum telluride(MoTe2)and tin diselenide(SnSe2),via both electrostatic and optical modulation.By a single electrostatic gating with hexagonal boron nitride(hBN)as the dielectric,a variety of electrical transport characteristics including forward rectifying,Zener tunneling,and backward rectifying are realized on the same heterojunction at low gate voltages of±1 V.In particular,the heterostructure can function as an Esaki tunnel diode with a room-temperature negative differential resistance.This great tunability originates from the atomicallyflat and inert surface of h-BN that significantly suppresses the interfacial trap scattering and strain effects.Upon the illumination of an 885 nm laser,the band alignment of heterojunction can be further tuned to facilitate the direct tunneling of photogenerated charge carriers,which leads to a high photocurrent on/off ratio of>105 and a competitive photodetectivity of 1.03×1012 Jones at zero bias.Moreover,the open-circuit voltage of irradiated heterojunction can be switched from positive to negative at opposite gate voltages,revealing a transition from accumulation mode to depletion mode.Our findings not only promise a simple strategy to tailor the bands of type-ⅢvdWHs but also provide an in-depth understanding of interlayer tunneling for future low-power electronic and optoelectronic applications.