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Evaluating Infrared Thermal Image’s Color Palettes in Hot Tropical Area
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作者 Romulo L. Olalia Jr. Jenniea A. Olalia Maynard Gel F. Carse 《Journal of Computer and Communications》 2021年第11期37-49,共13页
The use of Infrared Thermal Scanners proved to be very useful in lots of applications. Using different color palettes, temperatures can be well-represented in the resulting image. However, most color palettes in hot t... The use of Infrared Thermal Scanners proved to be very useful in lots of applications. Using different color palettes, temperatures can be well-represented in the resulting image. However, most color palettes in hot tropical places like the Philippines are unsuitable since the ambient temperature is almost the same as the scanned object or person. This study evaluates twelve (12) known and used color palettes in the market to determine the most suitable for tropical places using the edge/border tracing algorithms Sobel-Feldman and Laplacian. The result shows that color palettes with the most colors produce more noise, making it difficult to distinguish the object scanned from the background. On the other hand, color palettes with three or fewer contrasting colors produce crisp and more detailed results. This study helps developers and researchers efficiently use color combinations suitable for hot weather for an effective thermal scanning and image representation. 展开更多
关键词 Color Palette thermal infrared camera Hot Tropical Area Edge Border Detection
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Device topological thermal management of β-Ga_(2)O_(3) Schottky barrier diodes 被引量:1
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作者 Yang-Tong Yu Xue-Qiang Xiang +4 位作者 Xuan-Ze Zhou Kai Zhou Guang-Wei Xu Xiao-Long Zhao Shi-Bing Long 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第6期509-515,共7页
The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_(2) O_(3)) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_(2) O_(... The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_(2) O_(3)) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_(2) O_(3), their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga_(2) O_(3) Schottky barrier diodes(SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga_(2) O_(3), work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga_(2) O_(3) plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga_(2) O_(3) SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga_(2) O_(3) diode. 展开更多
关键词 β-Ga_(2)O_(3)Schottky barrier diode thermal management TCAD simulation infrared thermal imaging camera
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