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Resistance switching in oxides with inhomogeneous conductivity
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作者 尚大山 孙继荣 +1 位作者 沈保根 Wuttig Matthias 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第6期1-18,共18页
Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including bina... Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal oxides, perovskite oxides, chalcogenides, carbon- and silicon-based materials, as well as organic materials. RS phenomena can be used to store information and offer an attractive performance, which encompasses fast switching speeds, high scalability, and the desirable compatibility with Si-based complementary metal-oxide-semiconductor fabrication. This is promising for nonvolatile memory technology, i.e., resistance random access memory (RRAM). However, a comprehensive understanding of the underlying mechanism is still lacking. This impedes faster product development as well as accurate assessment of the device performance potential. Generally speaking, RS occurs not in the entire dielectric but only in a small, confined region, which results from the local variation of conductivity in dielectrics. In this review, we focus on the RS in oxides with such an inhomogeneous conductivity. According to the origin of the conductivity inhomogeneity, the RS phenomena and their working mechanism are reviewed by dividing them into two aspects: interface RS, based on the change of contact resistance at metal/oxide interface due to the change of Schottky barrier and interface chemical layer, and bulk RS, realized by the formation, connection, and disconnection of conductive channels in the oxides. Finally the current challenges of RS investigation and the potential improvement of the RS performance for the nonvolatile memories are discussed. 展开更多
关键词 resistance switching inhomogeneous conductivity transition metal oxide
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Electromagnetic scattering from two parallel 2D targets arbitrarily located in a Gaussian beam 被引量:9
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作者 王运华 郭立新 吴琼 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第8期1755-1765,共11页
In this paper based on the equivalence principle and the reciprocity theorem, the scattered field up to second-order by two parallel 2D targets arbitrarily located in a Gaussian beam is considered. The first-order sol... In this paper based on the equivalence principle and the reciprocity theorem, the scattered field up to second-order by two parallel 2D targets arbitrarily located in a Gaussian beam is considered. The first-order solution can easily be obtained by calculating the scattered field from isolated targets when illuminated by a Gaussian beam. However, because of the difficulty in formulating the couple scattering field, it is almost impossible to find an analytical solution for the second-order scattered field if the shapes of 2D targets are not canonical geometries. In order to overcome this problem, in this paper, the second-order solution is derived by using the technique based on the reciprocity theorem and the equivalence principle. Meanwhile, the relation between the secondary scattered field from target #1 and target #2 is obtained. Specifically, the bi- and mono-static scattering of Gaussian beam by two parallel adjacent inhomogeneous plasma-coated conducting circular cylinders is calculated and the dependence of attenuation of the scattering width on the thickness of the coated layer, electron number density, collision frequency and radar frequency is discussed in detail. 展开更多
关键词 reciprocity theorem equivalence theorem electromagnetic scattering inhomogeneous plasma-coated conducting cylinders Gaussian beam
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Scattering characteristics of conducting cylinder coated with nonuniform magnetized ferrite
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作者 胡斌杰 容启宁 +1 位作者 张军 Toutain Serge 《Chinese Physics B》 SCIE EI CAS CSCD 2005年第11期2305-2313,共9页
An analytical technique, referred to as the scattering matrix method (SMM), is developed to analyse the scattering of a planar wave from a conductolution for the nonuniform fering cylinder coated with nonuniform mag... An analytical technique, referred to as the scattering matrix method (SMM), is developed to analyse the scattering of a planar wave from a conductolution for the nonuniform fering cylinder coated with nonuniform magnetized ferrite. The SMM srite coating can be reduced to the expressions for the scattering and penetrated coefficients in four particular cases: nonuniform magnetized ferrite cylinder, uniform magnetized ferrite-coated conducting cylinder, uniform ferrite cylinder as well as homogeneous dielectric-coated conducting cylinder. The resonant condition for the nonuniform ferrite coating is obtained. The distinctive differences in scattering between the nonuniform ferrite coating and the nonuniform dielectric coating are demonstrated. The effects of applied magnetic fields and wave frequencies on the scattering characteristics for two types of the linear profiles are revealed. 展开更多
关键词 scattering inhomogeneous ferrite conducting cylinder scattering matrix method
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