EXPLICIT DESCRIPTION OF A CLASS OF INDECOMPOSABLE INJECTIVE MODULES

Let R be a commutative Noetherian ring and p be a prime ideal of R such that the ideal pRp is principal and ht(p)≠0. In this note, the anthors describe the explicit structure of the injective envelope of the R-module R/p.

Notes on Strongly n-Gorenstein Projective, Injective and Flat Modules

In this paper, we mainly investigate some properties of strongly n-Gorenstein projective, injective and flat modules under the extension of rings, which mainly including excellent extensions, morita equivalences, polynomial extensions and localizations.

n-strongly Gorenstein Projective and Injective and Flat Modules

In this paper, we study some properties of n-strongly Gorenstein projective,injective and flat modules, and discuss some connections between n-strongly Gorenstein injective, projective and flat modules. Some applications are given.

V-Gorenstein Injective Modules Preenvelopes and Related Dimension

Let R and S be associative rings and sVR a semidualizing （S-R）-bimodule. An R-module N is said to be V-Gorenstein injective if there exists a HomR（Zv（R）,-） and HomR（-,Zv（R）） exact exact complex . of V-injective modules Ii and Ii,i ∈ N0, such that N We will call N to be strongly V-Gorenstein injective in case that all modules and homomorphisms in the above exact complex are equal, respectively. It is proved that the class of V-Gorenstein injective modules are closed under extension, direct summand and is a subset of the Auslander class ,4v（R） which leads to the fact that V-Gorenstein injective modules admit exact right Iv （R）-resolution. By using these facts, and thinking of the fact that the class of strongly V-Gorenstein injective modules is not closed under direct summand, it is proved that an R-module N is strongly V- Gorenstein injective if and only if N @ E is strongly V-Gorenstein injective for some V-injective module E. Finally, it is proved that an R-module N of finite V-Gorenstein injective injective dimension admits V-Corenstein injective preenvelope which leads to the fact that, for a natural integer n, Gorenstein V-injective injective dimension of N is bounded to n if and only if Ext Iv （R） （I, N） = 0 for all modules I with finite Iv （R）-injective dimension.

A Generalization of Gorenstein Injective and Flat Modules

In this article, we introduce and study the concept of n-Gorenstein injective （resp., n-Gorenstein flat） modules as a nontrivial generalization of Gorenstein injective （resp., Gorenstein flat） modules. We investigate the properties of these modules in various ways. For example, we show that the class of n-Gorenstein injective （resp., n -Gorenstein flat） modules is closed under direct sums and direct products for n ≥ 2. To this end, we first introduce and study the notions of n-injective modules and n-flat modules.

Remarks on Gorenstein Weak Injective and Weak Flat Modules

In this paper,we introduce Gorenstein weak injective and weak flat modules in terms of,respectively,weak injective and weak flat modules;the classes of Gorenstein weak injective and weak flat modules are larger than the classical classes of Gorenstein injective and flat modules.In this new setting,we characterize rings over which all modules are Gorenstein weak injective.Moreover,we discuss the relation between the weak cosyzygy and Gorenstein weak cosyzygy of a module,and also the stability of Gorenstein weak injective modules.

Injection modulation of p^+-n emitter junction in 4H-SiC light triggered thyristor by double-deck thin n-base

To overcome hole-injection limitation of p^＋-n emitter junction in 4H-SiC light triggered thyristor, a novel high- voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two- dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole- injection of p^＋-n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n- base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by 500-mW/cm^2 ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.

INJECTIVE PRECOVERS AND MODULES OF GENERALIZED INVERSE POLYNOMIALS

This paper is motivated by S. Park [10] in which the injective cover of left R[x]- module M[x? ] of inverse polynomials over a left R-module M was discussed. The 1 author considers the ?-covers of modules and shows that if η : P ?→ M is an ?- cover of M, then [ηS, ] : [PS, ] ?→ [MS, ] is an [?S, ]-cover of left [[RS, ]]-module ≤ ≤ ≤ ≤ ≤ [MS, ], where ? is a class of left R-modules and [MS, ] is the left [[RS, ]]-module of ≤ ≤ ≤ generalized inverse polynomials over a left R-module M. Also some properties of the injective cover of left [[RS, ]]-module [MS, ] are discussed. ≤

Simplified modeling of frequency behavior in photonic crystal vertical cavity surface emitting laser with tunnel injection quantum dot in active region

In this work, the characteristics of the photonic crystal tunneling injection quantum dot vertical cavity surface emitting lasers（Ph C-TIQD-VCSEL） are studied through analyzing a modified modulation transfer function. The function is based on the rate equations describing the carrier dynamics at different energy levels of dot and injector well. Although the frequency modulation response component associated with carrier dynamics in wetting layer（WL） and at excited state（ES） levels of dots limits the total bandwidth in conventional QD-VCSEL, our study shows that it can be compensated for by electron tunneling from the injector well into the dot in TIQD structure. Carrier back tunneling time is one of the most important parameters, and by increment of that, the bias current dependence of the total bandwidth will be insignificant. It is proved that at high bias current, the limitation of the WL-ES level plays an important role in reducing the total bandwidth and results in rollovers on 3-d B bandwidth-I curves. In such a way, for smaller air hole diameter of photonic crystal, the effect of this reduction is stronger.

Generalized Gorenstein Modules

We introduce a generalization of the Gorenstein injective modules:the Gorenstein FPn-injective modules(denoted by GI_(n)).They are the cycles of the exact complexes of injective modules that remain exact when we apply a functor Hom(A,-),with A any FP_(n)-injective module.Thus,GL_(o)is the class of classical Gorenstein injective modules,and GI_(1)is the class of Ding injective modules.We prove that over any ring R,for any n≥2,the class GI_(n)is the right half of a perfect cotorsion pair,and therefore it is an enveloping class.For n=1 we show that GI_(1)(i.e.,the Ding injectives)forms the right half of a hereditary cotorsion pair.If moreover the ring R is coherent,then the Ding injective modules form an enveloping class.We also define the dual notion,that of Gorenstein FP_(n)-projectives(denoted by GP_(n)).They generalize the Ding projective modules,and so,the Gorenstein projective modules.We prove that for any n≥2 the class GP_(n)is the left half of a complete hereditary cotorsion pair,and therefore it is special precovering.

C3-Modules

One of the continuity conditions identified by Utumi on self-injective rings is the C3-condition, where a module M is called a C3-module if whenever A and B are direct summands of M and A A B = 0, then A B is a summand of M. In addition to injective and direct-injective modules, the class of C3-modules includes the semisimple, continuous, indecomposable and regular modules. Indeed, every commutative ring is a C3-ring. In this paper we provide a general and unified treatment of the above mentioned classes of modules in terms of the C3-condition, and establish new characterizations of several well known classes of rings.

Gorenstein Injective and Injective Complete Cohomological Dimensions of Groups

Using Nucinkis＇s injective complete cohomological functors, we assign a numerical invariant to each group P, called the injective complete cohomological dimension of F, denoted by iccd P. We study this dimension and investigate its properties. Also, we define the Gorenstein injective dimension of the group F, which is denoted by Gid F. We show that Gid F is related to iccd F, as well as to spli and silp invariants of Gedrich and Gruenberg. In particular, it is shown that iccd P is a refinement of Gid P. In addition, we show that silp F = spli F 〈 ∞if and only if the Shapiro lemma holds for injective complete cohomology.

A Note on DG-Gorenstein Injective Complexes

The notion of DG-Gorenstein injective complexes is studied in this article.It is shown that a complex G is DG-Gorenstein injective if and only if G is exact with Z_(n)(G)Gorenstein injective in R-Mod for each n∈Zand any morphism f:E→G is null homotopic whenever E is a DG-injective complex.

On Ding Projective Complexes

In the paper, Ding projective modules and Ding projective complexes are considered. In particular, it is proven that Ding projective complexes are precisely the complexes X for which each Xm is a Ding projective R-module for all m ∈ Z.

Acyclic Complexes and Gorenstein Rings

For a given class of modules A,let A be the class of exact complexes having all cycles in A,and dw(A)the class of complexes with all components in A.Denote by GL the class of Gorenstein injective modules.We prove that the following are equivalent over any ring R:every exact complex of injective modules is totally acyclic;every exact complex of Gorenstein injective modules is in every complex in dw(GL)is dg-Gorenstein injective.The analogous result for complexes of flat and Gorenstein flat modules also holds over arb计rary rings.If the ring is n-perfect for some integer n≥0,the three equivalent statements for flat and Gorenstein flat modules are equivalent with their counterparts for projective and projectively coresolved Gorenstein flat modules.We also prove the following characterization of Gorenstein rings.Let R be a commutative coherent ring;then the following are equivalent:(1)every exact complex of FP-injective modules has all its cycles Ding injective modules;(2)every exact complex of flat modules is F-totally acyclic,and every R-modulc M such that M^(+)is Gorenstein flat is Ding injective;(3)every exact complex of injectives has all its cycles Ding injective modules and every R-module M such that is Gorenstein flat is Ding injective.If R has finite Krull dimension,statements(1)-(3)are equivalent to(4)R is a Gorenstein ring(in the sense of Iwanaga).