Central Kansas Cooperative in Education has collected quite a fewsoftware packages and special hardware devices to assist the disabledpeople in their education.Computer-aided learning has brought themhope for life.The...Central Kansas Cooperative in Education has collected quite a fewsoftware packages and special hardware devices to assist the disabledpeople in their education.Computer-aided learning has brought themhope for life.There are mainly four other devices for input into computers for thedisabled people in addition to the keyboard since some of them can展开更多
Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we obser...Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.展开更多
文摘Central Kansas Cooperative in Education has collected quite a fewsoftware packages and special hardware devices to assist the disabledpeople in their education.Computer-aided learning has brought themhope for life.There are mainly four other devices for input into computers for thedisabled people in addition to the keyboard since some of them can
文摘Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.
