随着清洁能源的大规模开发,未来清洁能源基地的容量将普遍达到千兆瓦级及以上,这对柔直换流器容量提出更高要求。国家电网公司联合各换流阀厂家正在开展大容量柔性直流换流阀的研制,绝缘栅双极型晶体管(IGBT)器件电流等级达到5 kA,并且...随着清洁能源的大规模开发,未来清洁能源基地的容量将普遍达到千兆瓦级及以上,这对柔直换流器容量提出更高要求。国家电网公司联合各换流阀厂家正在开展大容量柔性直流换流阀的研制,绝缘栅双极型晶体管(IGBT)器件电流等级达到5 kA,并且采用IGBT并联,基于5 kA IGBT并联的柔直换流阀研制在世界范围内尚处于空白。通过研究攻克了5 kA IGBT并联子模块驱动设计、杂散电感优化、结构设计等多项关键技术,设计了基于5 kA IGBT器件并联的模块化多电平换流器(MMC)子模块,并对子模块开展了双脉冲、连续运行和过负荷试验,验证了5 kA IGBT并联子模块运行可靠性。展开更多
A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and...A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and metal oxide semiconductor gate(MOS gate)in the p-shield region.The grounded p-shield region can significantly suppress the high electric field around gate oxide in Si C devices,but it weakens the conductivity modulation in the Si C trench IGBT by rapidly sweeping out holes.This effect can be eliminated by introducing the CHE path.The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage(VON).During the turn-off transient,the CHE path is formed,which contributes to a decreased turn-off loss(EOFF).Based on numerical simulation,the EOFFof the proposed IGBT is reduced by 89%compared with the conventional IGBT at the same VONand the VONof the proposed IGBT is reduced by 50%compared to the grounded p-shield IGBT at the same EOFF.In addition,the average power reduction for the proposed device can be 51.0%to 81.7%and 58.2%to 72.1%with its counterparts at a wide frequency range of 500 Hz to 10 k Hz,revealing a great improvement of frequency characteristics.展开更多
为满足电压源换流器高压直流输电(voltage source converter high voltage direct current,VSC-HVDC)装置可靠性及其试验方法和试验等效机制研究的需要,重点研究了该装置中绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)...为满足电压源换流器高压直流输电(voltage source converter high voltage direct current,VSC-HVDC)装置可靠性及其试验方法和试验等效机制研究的需要,重点研究了该装置中绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)阀在过电流故障状态下的失效机制。介绍了VSC-HVDC系统及其阀的结构,将IGBT阀过电流故障分为3种不同的类型,分析IGBT阀在不同过电流故障状态下的电压和电流应力及其在故障应力下的内部物理过程。最终得到了IGBT阀在3种过电流故障下的失效机制。展开更多
文摘随着清洁能源的大规模开发,未来清洁能源基地的容量将普遍达到千兆瓦级及以上,这对柔直换流器容量提出更高要求。国家电网公司联合各换流阀厂家正在开展大容量柔性直流换流阀的研制,绝缘栅双极型晶体管(IGBT)器件电流等级达到5 kA,并且采用IGBT并联,基于5 kA IGBT并联的柔直换流阀研制在世界范围内尚处于空白。通过研究攻克了5 kA IGBT并联子模块驱动设计、杂散电感优化、结构设计等多项关键技术,设计了基于5 kA IGBT器件并联的模块化多电平换流器(MMC)子模块,并对子模块开展了双脉冲、连续运行和过负荷试验,验证了5 kA IGBT并联子模块运行可靠性。
基金Project supported by the Hunan Provincial Natural Science Foundation of China(Grant No.2021JJ30738)Scientific Research Fund of Hunan Provincial Education Department(Grant No.19K001)Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering’s Open Fund Project-2020(Grant No.202016)。
文摘A novel 4H-Si C trench insulated gate bipolar transistor(IGBT)with a controllable hole-extracting(CHE)path is proposed and investigated in this paper.The CHE path is controlled by metal semiconductor gate(MES gate)and metal oxide semiconductor gate(MOS gate)in the p-shield region.The grounded p-shield region can significantly suppress the high electric field around gate oxide in Si C devices,but it weakens the conductivity modulation in the Si C trench IGBT by rapidly sweeping out holes.This effect can be eliminated by introducing the CHE path.The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage(VON).During the turn-off transient,the CHE path is formed,which contributes to a decreased turn-off loss(EOFF).Based on numerical simulation,the EOFFof the proposed IGBT is reduced by 89%compared with the conventional IGBT at the same VONand the VONof the proposed IGBT is reduced by 50%compared to the grounded p-shield IGBT at the same EOFF.In addition,the average power reduction for the proposed device can be 51.0%to 81.7%and 58.2%to 72.1%with its counterparts at a wide frequency range of 500 Hz to 10 k Hz,revealing a great improvement of frequency characteristics.
文摘为满足电压源换流器高压直流输电(voltage source converter high voltage direct current,VSC-HVDC)装置可靠性及其试验方法和试验等效机制研究的需要,重点研究了该装置中绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)阀在过电流故障状态下的失效机制。介绍了VSC-HVDC系统及其阀的结构,将IGBT阀过电流故障分为3种不同的类型,分析IGBT阀在不同过电流故障状态下的电压和电流应力及其在故障应力下的内部物理过程。最终得到了IGBT阀在3种过电流故障下的失效机制。
